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    A9000 Search Results

    A9000 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    SIT8944BI-33-33EA90.000000 SiTime 1 to 110 MHz, Extended Temperature (-55 °C to 125 °C) Oscillator Datasheet
    SIT2044BELS8-33NA9.000000 SiTime 1 to 110 MHz, Extended Temperature (-55 °C to 125 °C) SOT-23 Oscillator Datasheet
    SIT5146AC-FD-33E0A9.000000 SiTime 1 to 60 MHz, ±0.5 to ±2.5 ppm Super-TCXO Datasheet
    SIT8944BI-22-33EA90.000000 SiTime 1 to 110 MHz, Extended Temperature (-55 °C to 125 °C) Oscillator Datasheet
    SIT9045AE-13-33SAA9.000000 SiTime 1 to 150 MHz, Spread-spectrum, Extended Temperature (-55°C to 125 °C) Datasheet
    SF Impression Pixel

    A9000 Price and Stock

    Wurth Elektronik 15412085A9000

    WL-SICW SMT INFRARED CHIP LED WA
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    DigiKey 15412085A9000 Cut Tape 4,987 1
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    Mouser Electronics 15412085A9000 3,076
    • 1 $0.85
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    • 100 $0.642
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    Bristol Electronics 15412085A9000 5,352
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    t-Global Technology TG-A9000-15-15-0.5

    THERM PAD 15MMX15MM PINK
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    DigiKey TG-A9000-15-15-0.5 Bulk 439 1
    • 1 $0.29
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    • 100 $0.2488
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    t-Global Technology TG-A9000-15-15-0.8

    THERM PAD 15MMX15MM PINK
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    DigiKey TG-A9000-15-15-0.8 Bulk 267 1
    • 1 $0.38
    • 10 $0.366
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    Mercury Electronic Ind Co Ltd QMQF576D25-2.0A-90.000

    XTAL OSC TCXO 90.0000MHZ LVDS
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    DigiKey QMQF576D25-2.0A-90.000 250 3
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    Master Electronics QMQF576D25-2.0A-90.000
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    Mercury Electronic Ind Co Ltd QMQF326P33-2.0A-90.000

    XTAL OSC TCXO 90.0000MHZ LVPECL
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    DigiKey QMQF326P33-2.0A-90.000 250 3
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    Master Electronics QMQF326P33-2.0A-90.000
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    A9000 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    SA6954

    Abstract: S29WS064N S29WS128N S29WS256N WS128N FFC00
    Text: S29WSxxxN MirrorBit Flash Family S29WS256N, S29WS128N, S29WS064N 256/128/64 Megabit 16/8/4 M x 16-Bit CMOS 1.8 Volt-only Simultaneous Read/Write, Burst Mode Flash Memory PRELIMINARY Distinctive Characteristics Architectural Advantages „ Single 1.8 volt read, program and erase (1.70 to


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    PDF S29WSxxxN S29WS256N, S29WS128N, S29WS064N 16-Bit) SA6954 S29WS064N S29WS128N S29WS256N WS128N FFC00

    C000H-DFFFH

    Abstract: 24Blocks FB0000h-FBFFFFh 9F0000h-9FFFFFh C10000h-C1FFFFh FF4000h-FF5FFFh 8a0000h8affffh
    Text: ADVANCED INFORMATION MX29LW128T/B/U/D 128M-BIT [16M x 8 / 8M x 16] SINGLE VOLTAGE 3V ONLY PAGE MODE FLASH MEMORY FEATURES GENERAL • 8M word x 16 Bit /16M Byte x 8 Bit switchable Power Supply Voltage - VCC=2.7V to 3.6V for read, erase and program operation


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    PDF MX29LW128T/B/U/D 128M-BIT JAN/27/2003 MAR/28/2003 MAY/16/2003 MAY/29/2003 C000H-DFFFH 24Blocks FB0000h-FBFFFFh 9F0000h-9FFFFFh C10000h-C1FFFFh FF4000h-FF5FFFh 8a0000h8affffh

    PROCESSOR

    Abstract: mp 9141 es dc-dc mp 9141 es CX5520 GXm-180B 2.9V 70C power module si 3101 schematic diagram Geode GXm Processor tag 8514 30054 gxm-266b
    Text: Geode GXm Processor Integrated x86 Solution with MMX Support General Description The National Semiconductor Geode™ GXm processor is an advanced 32-bit x86 compatible processor offering high performance, fully accelerated 2D graphics, a 64-bit synchronous DRAM controller and a PCI bus controller,


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    PDF 32-bit 64-bit PROCESSOR mp 9141 es dc-dc mp 9141 es CX5520 GXm-180B 2.9V 70C power module si 3101 schematic diagram Geode GXm Processor tag 8514 30054 gxm-266b

    7segment sl1 sl2

    Abstract: No abstract text available
    Text: CXD3027R CD Digital Signal Processor with Built-in Digital Servo + Shock-Proof Memory Controller + Digital High & Bass Boost Description The CXD3027R is a digital signal processor LSI for CD players. This LSI incorporates a digital servo, high & bass boost, shock-proof memory controller, 1-bit DAC and


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    PDF CXD3027R CXD3027R LQFP-120P-L021 P-LQFP120-16x16-0 120PIN LQFP-120P-L051 7segment sl1 sl2

    JESD97

    Abstract: M29DW128F TSOP56 6C80
    Text: M29DW128F 128 Mbit 16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block 3V supply Flash memory Feature summary • Supply voltage – VCC = 2.7V to 3.6V for Program, Erase and Read – VPP =12V for Fast Program (optional) ■ Asynchronous Random/Page Read


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    PDF M29DW128F TSOP56 32-Word 16Mbit 48Mbit 16Mbit TBGA64 JESD97 M29DW128F TSOP56 6C80

    SA452

    Abstract: SA336 SA424 120R S29GL512N SA487 EE8000 a78000a7ffff c58000c5ffff SA4871
    Text: Am29LV2562M Data Sheet RETIRED PRODUCT This product has been retired and is not available for designs. For new and current designs, S29GL512N supersedes Am29LV2562M and is the factory-recommended migration path. Please refer to the S29GL512N Data Sheet for specifications and ordering information. Availability of this


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    PDF Am29LV2562M S29GL512N S29GL512N SA452 SA336 SA424 120R SA487 EE8000 a78000a7ffff c58000c5ffff SA4871

    S29WS256N

    Abstract: S71WS512NE0BFWZZ
    Text: S71WS512NE0BFWZZ Stacked Multi-Chip Product MCP Flash Memory and pSRAM CMOS 1.8 Volt, Simultaneous Operation, Burst Mode Flash Memory and Pseudo-Static RAM ADVANCE INFORMATION DISTINCTIVE CHARACTERISTICS GENERAL DESCRIPTION MCP Features The S71WS512 Series is a product line of stacked Multi-Chip


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    PDF S71WS512NE0BFWZZ S71WS512 S29WS256N 54MHz 128Mb 96-ball S71WS512NE0BFWZZ S29WS256N

    M29W128FL

    Abstract: Memory Protection Devices M29W128FH JESD97 M29W128F TSOP56
    Text: M29W128FH M29W128FL 128 Mbit 8Mb x 16 or 16Mb x 8, Page, Uniform Block 3V Supply Flash Memory Feature summary • Supply voltage – VCC = 2.7 to 3.6V for Program, Erase and Read – VPP =12V for Fast Program (optional) ■ Asynchronous Random/Page Read


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    PDF M29W128FH M29W128FL Words/16 TSOP56 32-Word 64-Bytes) M29W128FL Memory Protection Devices M29W128FH JESD97 M29W128F TSOP56

    FL128P

    Abstract: SPANSION FL128P
    Text: S25FL128P 128 Megabit CMOS 3.0 Volt Flash Memory with 104-MHz SPI Serial Peripheral Interface Bus Data Sheet S25FL128P Cover Sheet Notice to Readers: This document states the current technical specifications regarding the Spansion product(s) described herein. Each product described herein may be designated as Advance Information,


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    PDF S25FL128P 104-MHz S25FL128P FL128P SPANSION FL128P

    samsung electronics ba41

    Abstract: BA175
    Text: Preliminary FLASH MEMORY K8C56 57 15ET(B)M 256Mb M-die MLC NOR Specification INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,


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    PDF K8C56 256Mb A0-A23 000000FH 000001FH 000002FH 0000000H samsung electronics ba41 BA175

    BA379

    Abstract: BA377 BA339 BA438 BA429 BA416 ba-302 BA512 BA308 ba324
    Text: K8A5615ET B A NOR FLASH MEMORY Document Title 256M Bit (16M x16) Synchronous Burst , Multi Bank NOR Flash Memory Revision History Revision No. History Draft Date Remark 0.0 Advanced March 15, 2004 Advance 0.1 Revision - Change the speed code 7B : 90ns @54MHz -> 7B : 88.5ns @54MHz


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    PDF K8A5615ET 54MHz 22ECH 22FCH 22EDH 22FDH K8A56156ET 70ns--- BA379 BA377 BA339 BA438 BA429 BA416 ba-302 BA512 BA308 ba324

    NS064N

    Abstract: S29NS128N S29NS256N VDC048 S29NS256
    Text: S29NSxxxN MirrorBitTM Flash Family S29NS256N, S29NS128N, S29NS064N 256/128/64 Megabit 16/8/4M x 16-bit , CMOS 1.8 Volt-only Simultaneous Read/Write, Multiplexed, Burst Mode Flash Memory ADVANCE INFORMATION Distinctive Characteristics „ Single 1.8 volt read, program and erase (1.70


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    PDF S29NSxxxN S29NS256N, S29NS128N, S29NS064N 16/8/4M 16-bit) 32-Word S29NS256/128/64N NS064N S29NS128N S29NS256N VDC048 S29NS256

    JESD97

    Abstract: M29DW128F TSOP56 esn 234 D2578 5PWA
    Text: M29DW128F 128 Mbit 16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block 3V supply Flash memory Features summary • Supply Voltage – VCC = 2.7V to 3.6V for Program, Erase and Read – VCCQ= 1.65V to 3.6V for Input/Output – VPP =12V for Fast Program (optional)


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    PDF M29DW128F TSOP56 32-Word TBGA64 16Mbit 48Mbit 16Mbit JESD97 M29DW128F TSOP56 esn 234 D2578 5PWA

    IS29GL256

    Abstract: No abstract text available
    Text: IS29GL256 256 Megabit 32768K x 8-bit / 16384K x 16-bit Flash Memory Page mode Flash Memory, CMOS 3.0 Volt-only FEATURES • Single power supply operation - Full voltage range: 2.7 to 3.6 volts read and write operations • High performance - Access times as fast as 90 ns


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    PDF IS29GL256 32768K 16384K 16-bit) 8-word/16-byte 32-word/64-byte 128-word/256-byte 8-word/16byte IS29GL256 IS29GL256-JTLE

    S25FL129

    Abstract: S25FL129P s25fl129p0 FL129P footprint WSON S25FL128P SA255 SCK FAB024 footprint WSON-8 reader sa223 FAC024
    Text: S25FL129P 128-Mbit CMOS 3.0 Volt Flash Memory with 104-MHz SPI Serial Peripheral Interface Multi I/O Bus Data Sheet S25FL129P Cover Sheet Notice to Readers: This document states the current technical specifications regarding the Spansion product(s) described herein. Each product described herein may be designated as Advance Information,


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    PDF S25FL129P 128-Mbit 104-MHz S25FL129P S25FL129 s25fl129p0 FL129P footprint WSON S25FL128P SA255 SCK FAB024 footprint WSON-8 reader sa223 FAC024

    asme SA388

    Abstract: gl128m A2113 S29GL256 E78000 S29GL128N TSOP56 S29GL128N sa32sa35 S29GLxxxM BGA-63
    Text: S29GL-M MirrorBitTM フラッシュファミリ S29GL256MS29GL128MS29GL064MS29GL032M 256M ビット,128M ビット,64M ビット,および 32M ビット, 3.0V 単一電源,ページモードフラッシュメモリ 0.23µm MirrorBit プロセステクノロジ


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    PDF S29GL-M S29GL256MS29GL128MS29GL064MS29GL032M S29GL128MS29GL128N S29GL256MS29GL256N S29GLxxxN 00-B-5 S29GL032M LAA064 asme SA388 gl128m A2113 S29GL256 E78000 S29GL128N TSOP56 S29GL128N sa32sa35 S29GLxxxM BGA-63

    120R

    Abstract: C8800
    Text: Am29LV2562M Data Sheet July 2003 The following document specifies Spansion memory products that are now offered by both Advanced Micro Devices and Fujitsu. Although the document is marked with the name of the company that originally developed the specification, these products will be offered to customers of both AMD and


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    PDF Am29LV2562M 120R C8800

    PCA8802

    Abstract: JESD22-A114 JESD22-A115 JESD78
    Text: PCA8802 Smartcard RTC; ultra low power oscillator with integrated counter for initiating one time password generation Rev. 01 — 19 February 2009 Product data sheet 1. General description The PCA8802 is a CMOS integrated circuit for battery operation, typically supplied by


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    PDF PCA8802 PCA8802 JESD22-A114 JESD22-A115 JESD78

    DQ141

    Abstract: No abstract text available
    Text: M29DW128F 128 Mbit 16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block 3V Supply, Flash Memory PRELIMINARY DATA Features summary • Supply Voltage – VCC = 2.7V to 3.6V for Program, Erase and Read – VCCQ= 1.65V to 3.6V for Input/Output – VPP =12V for Fast Program (optional)


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    PDF M29DW128F 32-Word 16Mbit 48Mbit 16Mbit DQ141

    l256mh113

    Abstract: L256ML123R
    Text: Am29LV256M Data Sheet September 2003 The following document specifies Spansion memory products that are now offered by both Advanced Micro Devices and Fujitsu. Although the document is marked with the name of the company that originally developed the specification, these products will be offered to customers of both AMD and


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    PDF Am29LV256M l256mh113 L256ML123R

    A9000N

    Abstract: No abstract text available
    Text: HIGH POWER, FIXED ATTENUATORS SERIES A9000N DC-18 GHz GENERAL INFORMATION These attenuators use high power laser trim m ed distributed thin film ele­ ments to provide broadband frequency response at power levels up to 50 watts. C onvection cooling by fins allow s full power operation at 25°C


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    PDF DC-18 A9000N 9100N 9200N 9300N A9100N A9200N A9300N A9200N A9000N

    KDI A91

    Abstract: No abstract text available
    Text: HIGH POWER, FIXED ATTENUATORS DC-8 GHz SER IES A9000N DC-12.4 GHz I GENERAL INFORMATION: These attenuators use high power laser trimmed distributed thin film ele­ ments to provide broadband frequency response at power levels up to 50 watts. Convection cooling by fins allows full power operation at 25°C


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    PDF DC-12 A9100 A9200 A9300 MIL-C-39012 A9000N A9100N A9200N A9300N KDI A91

    Untitled

    Abstract: No abstract text available
    Text: HIGH POWER, FIXED SERIES A9000N ATTENUATORS DC-18 GHz GENERAL INFORMATION: These attenuators use high power laser trimmed distributed thin film el­ ements to provide broadband frequency response at power levels up to 50 watts. Convection cooling by fins allows full power operation at 25’ C


    OCR Scan
    PDF DC-18 A9000N A9100N DC-12 A9200N A9300N ll-C-39012 A920QN

    Untitled

    Abstract: No abstract text available
    Text: HIGH POWER, FIXED ATTENUATORS SERIES A9000N DC-18 GHz GENERAL INFORMATION These attenuators use high power laser trimmed distributed thin film ele­ ments to provide broadband frequency response at power levels up to 50 watts. Convection cooling by fins allows full power operation at 25°C


    OCR Scan
    PDF DC-18 A9000N A9100N DC-12 A9200N A9300N MIL-C-39012 A920QN