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Abstract: No abstract text available
Text: A88 1. General Description & Features General Description This device is Digital Image Signal Processor ISP for Security Camera System. The main features are Adaptive Contrast Enhancer (ACE), External Line-Lock, 2D Noise Reduction, 2 Auto (AE, AWB) control, Y/C processor, OSD, Video Encoder and Embedded CPU are included to realize above features.
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b72 voltage regulator
Abstract: marking A93 A75 marking code marking a86
Text: MN18R1624 8 DF0 MP18R1624(8)DF0 Revision History Version 1.0 (May 2003) - First Copy - Based on the 1.0 ver. (July 2002) 288Mbit D-die SO-RIMMTM Module Datasheet. Version 1.1 (Aug. 2003) - Add PGA type 144MB NexMod Module. - Add the discription of index pin marking.
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MN18R1624
MP18R1624
288Mbit
144MB
16Mx18)
288Mb
16K/32ms
b72 voltage regulator
marking A93
A75 marking code
marking a86
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U411
Abstract: L32* MARKING U166 1536A2 marking L36 1531A2 1531A
Text: 1500 series Toggle switches - insulated lever and bushing Distinctive features and specifications ❑ UL and VDE EN 61058-1 approved A ❑ Variety of actuator styles and colours ELECTRICAL SPECIFICATIONS • Max. current/voltage rating with resistive load :
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250VAC
125VAC
12VDC
500VDC
48DIA)
492DIA)
137DIA)
U411
L32* MARKING
U166
1536A2
marking L36
1531A2
1531A
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1531A2
Abstract: marking L36 A88 marking
Text: 1500 series Toggle switches - insulated lever and bushing Distinctive features and specifications UG1006-A ❑ UL approved A ❑ Variety of actuator styles and colours ELECTRICAL SPECIFICATIONS • Max. current/voltage rating with resistive load : 6A 250VAC 10.000 cycles
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UG1006-A
250VAC
125VAC
12VDC
500VDC
48DIA)
492DIA)
137DIA)
1531A2
marking L36
A88 marking
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marking a86
Abstract: No abstract text available
Text: MN18R1624 8 DF0 MP18R1624(8)DF0 Revision History Version 1.0 (May 2003) - First Copy - Based on the 1.0 ver. (July 2002) 288Mbit D-die SO-RIMMTM Module Datasheet. Version 1.1 (Aug. 2003) - Add PGA type 144MB NexMod Module. - Add the discription of index pin marking.
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MN18R1624
MP18R1624
288Mbit
144MB
16Mx18)
288Mb
16K/32ms
marking a86
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B83 004
Abstract: marking a86 b72 voltage regulator
Text: MN18R162 4 8DF0 MP18R162(4)8DF0 Revision History Version 1.0 (May 2003) - First Copy - Based on the 1.0 ver. (July 2002) 288Mbit D-die SO-RIMM Datasheet. Version 1.1 (Aug. 2003) - Add PGA type 144MB NexMod. - Add the discription of index pin marking. - Correct the physical dimension of PGA NexMod.
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MN18R162
MP18R162
288Mbit
144MB
16Mx18)
288Mb
16K/32ms
B83 004
marking a86
b72 voltage regulator
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siemens a55
Abstract: siemens A70 marking b28 siemens a57 siemens b38
Text: HYR16xx30/HYR18xx20G Rambus RIMM Modules Direct RDRAM RIMM Modules with 128/144 Mb RDRAMs Perliminary Information Rev. 0.9 Overview Form Factor The Direct Rambus RIMM™ module is a general purpose high-performance memory subsystem suitable for use in a broad range of applications including
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HYR16xx30/HYR18xx20G
128Mb/
144Mb
600MHz
800MHz
128MB,
HYR16xx30G/HYR18xx20G
siemens a55
siemens A70
marking b28
siemens a57
siemens b38
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HYR163249G-653
Abstract: HYR163249G-840 HYR166449G-653 HYR166449G-845 A17 INFINEON
Text: HYR16xx49G 64MB & 128MB Rambus RIMM Modules Direct RDRAM RIMM Modules with 288 Mbit RDRAMs Overview The Direct Rambus RIMM™ module is a general purpose high-performance memory subsystem suitable for use in a broad range of applications including computer memory, personal computers,
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HYR16xx49G
128MB
128MB,
HYR163249G-653
HYR163249G-840
HYR166449G-653
HYR166449G-845
A17 INFINEON
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MARKING CODE B82
Abstract: a87 marking Marking b66 marking a86 MARKING B83 marking a75
Text: MR18R162WAG0 Change History Version 1.0 January 2002 * First copy. * Based on the 1.0 ver. 288Mbit RIMM Module Datasheet Version 1.1 (July 2002) * Based on the 1.0 ver.(January 2002) 288Mbit A-die 32d RIMM Module Datasheet * eliminate "Target" etc. Page 0
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MR18R162WAG0
288Mbit
16Mx18)
32pcs
288Mb
16K/32ms
MARKING CODE B82
a87 marking
Marking b66
marking a86
MARKING B83
marking a75
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MARKING B83
Abstract: A74 marking diode u2 a90 marking A32 HYR163200G-653 HYR163200G-745 HYR163200G-840 HYR163200G-845 HYR183200G-653 HYR183200G-745
Text: HYR16 18 3200G 64/72 MByte RIMM Modules Direct RDRAM RIMM Modules Perliminary Information Rev. 0.9 Features Overview n The Direct Rambus RIMM™ module is a general purpose high-performance memory subsystem suitable for use in a broad range of applications including
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HYR16
3200G
600MHz
800MHz
128MB,
MARKING B83
A74 marking
diode u2 a90
marking A32
HYR163200G-653
HYR163200G-745
HYR163200G-840
HYR163200G-845
HYR183200G-653
HYR183200G-745
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a80 marking code
Abstract: MR18R162WDG0-CM8 B83 004 marking code B38 MR18R162WDG0 MR18R162WDG0-CK8 marking A70 marking code b84
Text: MR18R162WDG0 Change History Version 1.0 July 2002 * First copy. * Based on the 1.1 ver.(July 2002) 288Mbit A-die 32d RIMM Module Datasheet Page 0 Version 1.0 July. 2002 MR18R162WDG0 (16Mx18)*32pcs RIMM Module based on 288Mb D-die, 32s banks,16K/32ms Ref, 2.5V
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MR18R162WDG0
288Mbit
16Mx18)
32pcs
288Mb
16K/32ms
a80 marking code
MR18R162WDG0-CM8
B83 004
marking code B38
MR18R162WDG0
MR18R162WDG0-CK8
marking A70
marking code b84
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a74 marking code
Abstract: MARKING B82 MARKING B83 a80 marking code B11 marking code Device marking code B12 B13 B14 B15 B16 marking A45 a64 marking code A79 marking code a86 diode
Text: MR18R162WDG0 Change History Version 1.0 July 2002 * First copy. * Based on the 1.1 ver.(July 2002) 288Mbit A-die 32d RIMM Datasheet Page 0 Version 1.0 July. 2002 MR18R162WDG0 (16Mx18)*32pcs RIMMTM Module based on 288Mb D-die, 32s banks,16K/32ms Ref, 2.5V
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MR18R162WDG0
288Mbit
16Mx18)
32pcs
288Mb
16K/32ms
a74 marking code
MARKING B82
MARKING B83
a80 marking code
B11 marking code
Device marking code B12 B13 B14 B15 B16
marking A45
a64 marking code
A79 marking code
a86 diode
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8PDT
Abstract: 10PDT
Text: Pushbuttons Product Selection Guide Pushbutton A Pushbutton Series ELUM EP TP Mom./ Latching Tiny Tiny Poles/Throws SPDT SPST, SPDT, DPST SPST, SPDT, DPST SPDT, DPDT SPDT, DPDT, 3PDT, 4PDT Max. Current 3.5 VA 1 Amp 1 Amp 1 Amp 1 Amp Switch Type Process Sealed
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a80 marking code
Abstract: marking A32 marking A86 marking code B38 samsung electronics logo
Text: MR16R0828ER T 0 Change History Version 1.0 (July 2002) * First copy. * Based on the 1.0ver. 128Mb D-die Consumer RIMM Module Datasheet. Page 0 Version 1.0 July 2002 MR16R0828ER(T)0 (8Mx16)*8pcs Consumer RIMM Module based on 128Mb E-die, 32s banks,16K/32ms Ref, 2.5V
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MR16R0828ER
128Mb
8Mx16)
16K/32ms
a80 marking code
marking A32
marking A86
marking code B38
samsung electronics logo
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Untitled
Abstract: No abstract text available
Text: 14-Serie 4400-4600-A_15-Serie 4400-4600-A 21/11/12 14:05 Page88 4600 and 4400 series Toggle switches Distinctive features and specifications ❑ High current/voltage rating in a small case ❑ Butt action contacts ❑ Insulated or metal lever A ❑ UL, CSA and VDE EN 61058-1 approved
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14-Serie
4400-4600-A
15-Serie
400-4600-A
Page88
250VAC
125VAC
500VDC
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transistor marking A21
Abstract: a74 marking code b37 diode
Text: Preliminary MR16R0828ER T 0 Change History Version 1.0 (July 2002) - Preliminary * First copy. * Based on the 1.0ver. 128Mb RDRAMs(D-die) Consumer RIMM Datasheet. Page 0 Version 1.0 July 2002 Preliminary MR16R0828ER(T)0 (8Mx16)*8pcs Consumer RIMMTM Module based on 128Mb E-die, 32s banks,16K/32ms Ref, 2.5V
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MR16R0828ER
128Mb
8Mx16)
16K/32ms
transistor marking A21
a74 marking code
b37 diode
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MR16R0824BS0-CG6
Abstract: MR16R0828BS0-CG6
Text: Preliminary MR16R0824 8 BS0 Change History Version 1.0 (October 2000) - Preliminary * First copy. * Based on the 1.1ver. 128/144Mb RDRAMs(B-die) base RIMM Datasheet. Page 0 Version 1.0 Oct. 2000 Preliminary MR16R0824(8)BS0 (8Mx16)*4(8)pcs Consumer RIMMTM Module based on 128Mb B-die, 32s banks,16K/32ms Ref, 2.5V
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MR16R0824
128/144Mb
8Mx16)
128Mb
16K/32ms
MR16R0824BS0-CG6
MR16R0828BS0-CG6
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b41 Marking
Abstract: No abstract text available
Text: MR18R162WEG0 Change History Version 0.1 January 2004 * First copy. * Based on the 1.0 ver.(July 2002) 288Mbit D-die 32d RIMM Module Datasheet Version 1.0 (May 2004) * Eliminate "Preliminary" Page 0 Version 1.0 May 2004 MR18R162WEG0 (16Mx18)*32pcs RIMM Module based on 288Mb E-die, 32s banks,16K/32ms Ref, 2.5V
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MR18R162WEG0
288Mbit
16Mx18)
32pcs
288Mb
16K/32ms
b41 Marking
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A76 MARKING CODE
Abstract: a77 package marking a80 marking code marking A32 marking A45 marking code B38 MR18R162WEG0-CM8 MARKING B17 MARKING CODE B82 marking a86
Text: Preliminary MR18R162WEG0 Change History Version 0.1 January 2004 * First copy. * Based on the 1.0 ver.(July 2002) 288Mbit D-die 32d RIMM Module Datasheet Page 0 Version 0.1 Jan. 2004 Preliminary MR18R162WEG0 (16Mx18)*32pcs RIMM Module based on 288Mb E-die, 32s banks,16K/32ms Ref, 2.5V
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MR18R162WEG0
288Mbit
16Mx18)
32pcs
288Mb
16K/32ms
A76 MARKING CODE
a77 package marking
a80 marking code
marking A32
marking A45
marking code B38
MR18R162WEG0-CM8
MARKING B17
MARKING CODE B82
marking a86
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transistor marking A21
Abstract: a74 marking code b82 400 B83 004 marking B44 MARKING CODE b48
Text: MR18R162WAG0 Change History Version 1.0 January 2002 * First copy. * Based on the 1.0 ver. 288Mbit RDRAMs RIMM Datasheet Version 1.1 (July 2002) * Based on the 1.0 ver.(January 2002) 288Mbit A-die 32d RIMM Datasheet * eliminate "Target" etc. Page 0 Version 1.1 July. 2002
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MR18R162WAG0
288Mbit
16Mx18)
32pcs
288Mb
16K/32ms
transistor marking A21
a74 marking code
b82 400
B83 004
marking B44
MARKING CODE b48
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A23 851 diode
Abstract: diode 910 b34 HYMR225616 HYMR26416 256MX16 H-745
Text: TM RIMM Module with 256/288Mb RDRAMs Preliminary Overview Key Timing Parameters/Part Numbers The Rambus RIMMTM module is a general purpose high-performance memory subsystem suitable for use in a broad range of applications including computer memory, personal computers, workstations, and other
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256/288Mb
256/288Mb
600MHz
711MHz
800MHz
A23 851 diode
diode 910 b34
HYMR225616
HYMR26416
256MX16
H-745
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H-840
Abstract: H-745
Text: TM RIMM Module with 256/288Mb RDRAMs Preliminary Revision History * Rev. 0.95 Date : 2001.07.23 1. Page2, 7, 8, 10, 12 : Add 2D RIMM part Rev. 0.95 / July.01 1 TM RIMM Module with 256/288Mb RDRAMs Preliminary Overview Key Timing Parameters/Part Numbers The‘Rambus RIMMTM module is a general purpose
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256/288Mb
H-840
H-745
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A08S
Abstract: 15081 GOSC MQ K1 k6 diode
Text: A »» PULSE POWER APPLICATIONS C ü R R E í iilP R O W B ^ D íQ D E V rrm: Vdc max: It s m : Tvj max: Freq.: 12.000V 0,85 x V rrm 1min 60 kA / tp = 1 ms 125 °C For Single Pulse Applications (Tvj before Pulse max. 50°C) Fm: Weight: 20 kN ±10% 1,0 kg
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SEMICON10
0050-dl
A08S
15081
GOSC
MQ K1
k6 diode
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Untitled
Abstract: No abstract text available
Text: Philips Semiconductors Product specification Silicon planar epitaxial high-speed diode FEATURES • Plastic SMD envelope • High switching speed B A S 16W QUICK REFERENCE DATA SYMBOL MAX. UNIT continuous reverse voltage 75 V V RRM repetitive peak reverse
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OT323
BAS16W
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