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    TE Connectivity W57-XB1A7A10-5

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    TE Connectivity W57-XB1A7A10-10

    CIR BRKR THRM 10A 250VAC
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    TE Connectivity W57-XB1A7A10-15

    CIR BRKR THRM 15A 250VAC
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    AMD XA7A100T-1FGG484Q

    IC FPGA 285 I/O 484FBGA
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    DigiKey XA7A100T-1FGG484Q Tray 550 1
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    A7A10 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    SMV512K32-SP

    Abstract: No abstract text available
    Text: SMV512K32-SP SLVSA21C – JUNE 2011 – REVISED OCTOBER 2011 www.ti.com 16-Mb RADIATION-HARDENED SRAM Check for Samples: SMV512K32-SP FEATURES • 1 • • • • • 20-ns Read, 13.8-ns Write Through Maximum Access Time Functionally Compatible With Commercial


    Original     		PDF SMV512K32-SP SLVSA21C 16-Mb 20-ns 5e-17 SMV512K32-SP

    ecg semiconductors master replacement guide

    Abstract: ecg master replacement guide mkl b32110 siemens mkp B32650 c945 p 331 ks transistor IC,MASTER master replacement guide Kennlinie KTY 10-6 siemens b32110 A2005 transistor
    Text: Liebe Schuricht-Kunden, Ihre Zufriedenheit ist unser größtes Anliegen. Aus diesem Grunde versuchen wir, Ihnen Informationen und Ware stets zum richtigen Zeitpunkt verfügbar zu machen. Das gilt insbesondere auch für die Produkte der Siemens AG mit den drei


    Original     		PDF

    MT46V2M32

    Abstract: No abstract text available
    Text: 64Mb: x32 DDR SDRAM DOUBLE DATA RATE DDR SDRAM MT46V2M32V1- 512K x 32 x 4 banks MT46V2M32 - 512K x 32 x 4 banks For the latest data sheet revisions, please refer to the Micron Web site: www.micron.com/dramds FEATURES PIN ASSIGNMENT (TOP VIEW) 100-Pin TQFP


    Original     		PDF MT46V2M32V1- MT46V2M32 100-Pin 2M32DDR-07

    Untitled

    Abstract: No abstract text available
    Text: IS43/46LR32200B 512K x 32Bits x 4Banks Mobile DDR SDRAM Description The IS43/46LR32200B is 67,108,864 bits CMOS Mobile Double Data Rate Synchronous DRAM organized as 4 banks of 524,288 words x 32 bits. This product uses a double-data-rate architecture to achieve high-speed operation. The Data Input/ Output signals are transmitted on a


    Original     		PDF IS43/46LR32200B 32Bits IS43/46LR32200B 32-bit IS43LR32200B-6BLI 90-ball -40oC 2Mx32

    Untitled

    Abstract: No abstract text available
    Text: I S43LR16200C Advanced Information 1M x 16Bits x 2Banks Mobile DDR SDRAM Description The IS43LR16200C is 33,554,432 bits CMOS Mobile Double Data Rate Synchronous DRAM organized as 2 banks of 1,048,576 words x 16 bits. This product uses a double-data-rate architecture to achieve high-speed operation. The double data rate architecture is essentially a 2N


    Original     		PDF S43LR16200C 16Bits IS43LR16200C 2Mx16 IS43LR16200C-6BL 60-ball IS43LR16200C-6BLI

    B17C

    Abstract: 4202 bd datasheet BD 139 N A13B A5l102 A18E 48-7191 A17A 48-2210 AND501
    Text: PIN NUMBER 2161-1 102 PIN LENGTH 19.0/.750 PLATING 102 MATING “M” 11.43/.450 PCB “P” 4.37/.172 GOLD “G” N/A TIN “T” OVERALL PACKAGING PK-41661-001 STATUS A-41661-ANA102-* MATERIAL ENGINEERING VOIDS 26-48-1021 26-48-1031 26-48-1041 26-48-1051


    Original     		PDF PK-41661-001 -41661-ANA102-* -A2A102 -A3A102 -A4A102 -A5A102 -A6A102 -A7A102 -A8A102 -A9A102 B17C 4202 bd datasheet BD 139 N A13B A5l102 A18E 48-7191 A17A 48-2210 AND501

    H1111

    Abstract: SH7085 K4S641632H-TC75 PA12MD R5F7085 PA10 PA11
    Text: APPLICATION NOTE SH7080 Group x16-Bit SDRAM Interface Introduction This application note describes how to connect and use an SDRAM ×16 bits . You can use this application note as reference information for designing user software. Target Device SH7085 (R5F7085)


    Original     		PDF SH7080 16-Bit SH7085 R5F7085) REJ05B0740-0100 H1111 SH7085 K4S641632H-TC75 PA12MD R5F7085 PA10 PA11

    Untitled

    Abstract: No abstract text available
    Text: IS43/46LR32200B Preliminary Information 512K x 32Bits x 4Banks Mobile DDR SDRAM Description The IS43/46LR32200B is 67,108,864 bits CMOS Mobile Double Data Rate Synchronous DRAM organized as 4 banks of 524,288 words x 32 bits. This product uses a double-data-rate architecture to achieve high-speed operation. The Data Input/ Output signals are transmitted on a


    Original     		PDF IS43/46LR32200B 32Bits IS43/46LR32200B 32-bit 90-ball -40oC 2Mx32 IS43LR32200B-6BLI

    Untitled

    Abstract: No abstract text available
    Text: SMV512K32-SP www.ti.com SLVSA21H – JUNE 2011 – REVISED JULY 2013 16-Mb RADIATION-HARDENED SRAM Check for Samples: SMV512K32-SP FEATURES 1 • • • • • 20-ns Read, 13.8-ns Write Through Maximum Access Time Functionally Compatible With Commercial


    Original     		PDF SMV512K32-SP SLVSA21H 16-Mb 20-ns 5e-17

    VT6526

    Abstract: DM9161A FALC56 errata VT6526A VT6510B DIODE JS4 FALC56 application note FALC56 MPC8122 Oscilloscope USB 200Mhz Schematic
    Text: MSC8122/26ADS Reference Manual MSC8122/26 Application Development System MSC812xADSRM Rev B.01, September 2006 How to Reach Us: Home Page: www.freescale.com Web Support: http://www.freescale.com/support USA/Europe or Locations Not Listed: Freescale Semiconductor, Inc.


    Original     		PDF MSC8122/26ADS MSC8122/26 MSC812xADSRM EL516 VT6526 DM9161A FALC56 errata VT6526A VT6510B DIODE JS4 FALC56 application note FALC56 MPC8122 Oscilloscope USB 200Mhz Schematic

    46LR16200C

    Abstract: Mobile DDR SDRAM
    Text: IS43/46LR16200C 1M x 16Bits x 2Banks Mobile DDR SDRAM Description The IS43/46LR16200C is 33,554,432 bits CMOS Mobile Double Data Rate Synchronous DRAM organized as 2 banks of 1,048,576 words x 16 bits. This product uses a double-data-rate architecture to achieve high-speed operation. The double data rate architecture is essentially a 2N


    Original     		PDF IS43/46LR16200C 16Bits IS43/46LR16200C 2Mx16 IS43LR16200C-6BL 60-ball -40oC IS43LR16200C-6BLI 46LR16200C Mobile DDR SDRAM

    MT46V2M32

    Abstract: No abstract text available
    Text: PRELIMINARY 64Mb: x32 DDR SDRAM DOUBLE DATA RATE DDR SDRAM MT46V2M32V1- 512K x 32 x 4 banks MT46V2M32 - 512K x 32 x 4 banks For the latest data sheet revisions, please refer to the Micron Web site: www.micron.com/dramds FEATURES PIN ASSIGNMENT (TOP VIEW)


    Original     		PDF MT46V2M32V1- MT46V2M32 100-Pin 2M32DDR-07

    MT46V2M32

    Abstract: No abstract text available
    Text: 64Mb: x32 DDR SDRAM DOUBLE DATA RATE DDR SDRAM MT46V2M32V1- 512K x 32 x 4 banks MT46V2M32 - 512K x 32 x 4 banks For the latest data sheet revisions, please refer to the Micron Web site: www.micron.com/dramds FEATURES PIN ASSIGNMENT (TOP VIEW) 100-Pin TQFP


    Original     		PDF MT46V2M32V1- MT46V2M32 100-Pin 2M32DDR-07

    Untitled

    Abstract: No abstract text available
    Text: IS43LR16200C Advanced Information 1M x 16Bits x 2Banks Mobile DDR SDRAM Description The IS43LR16200C is 33,554,432 bits CMOS Mobile Double Data Rate Synchronous DRAM organized as 2 banks of 1,048,576 words x 16 bits. This product uses a double-data-rate architecture to achieve high-speed operation. The double data rate architecture is essentially a 2N


    Original     		PDF IS43LR16200C 16Bits IS43LR16200C 2Mx16 IS43LR16200C-6BL 60-ball IS43LR16200C-6BLI

    Untitled

    Abstract: No abstract text available
    Text: I S43LR32100C Advanced Information 512K x 32Bits x 2Banks Mobile DDR SDRAM Description The IS43LR32100C is 33,554,432 bits CMOS Mobile Double Data Rate Synchronous DRAM organized as 2 banks of 524,288 words x 32 bits. This product uses a double-data-rate architecture to achieve high-speed operation. The double data rate architecture is essentially a 2N


    Original     		PDF S43LR32100C 32Bits IS43LR32100C 1Mx32 IS43LR32100C-6BL 90-ball IS43LR32100C-6BLI

    Untitled

    Abstract: No abstract text available
    Text: SMV512K32-SP www.ti.com SLVSA21H – JUNE 2011 – REVISED JULY 2013 16-Mb RADIATION-HARDENED SRAM Check for Samples: SMV512K32-SP FEATURES 1 • • • • • 20-ns Read, 13.8-ns Write Through Maximum Access Time Functionally Compatible With Commercial


    Original     		PDF SMV512K32-SP SLVSA21H 16-Mb 20-ns 5e-17

    B17C

    Abstract: A5l102 48-7191 5241 kk A17a A18E AND501 A10E A17E PK-41661-001
    Text: PIN NUMBER 2161-1 102 PIN LENGTH 19.0/.750 PLATING 102 MATING “M” 11.43/.450 PCB “P” 4.37/.172 GOLD “G” N/A TIN “T” OVERALL PACKAGING PK-41661-001 STATUS A-41661-ANA102-* MATERIAL ENGINEERING VOIDS 26-48-1021 26-48-1031 26-48-1041 26-48-1051


    Original     		PDF PK-41661-001 -41661-ANA102-* -A2A102 -A3A102 -A4A102 -A5A102 -A6A102 -A7A102 -A8A102 -A9A102 B17C A5l102 48-7191 5241 kk A17a A18E AND501 A10E A17E PK-41661-001

    W946432AD

    Abstract: No abstract text available
    Text: W946432AD 512K x 4 BANKS × 32 BITS DDR SDRAM GENERAL DESCRIPTION The W946432AD is a high-speed CMOS Double Data Rate synchronous dynamic random access memory organized as 512K words x 4 banks x 32 bits. A bidirectional data strobe DQS is transmitted externally, along with data, for use in data capture at


    Original     		PDF W946432AD W946432AD

    MS35059-23

    Abstract: MS35059-22 MS35059 MS25068-23 MS35059-27 SPDT TOGGLE SWITCH 125VAC 6A MS25068-27 smd marking a60 MS35059-31 ms35059-21
    Text: TOGGLE SWITCHES A SPECIFICATIONS SUBJECT TO CHANGE WITHOUT NOTICE SEE TOGGLE SWITCH SELECTION GUIDE ON NEXT PAGE APEM, PO BOX 8288, HAVERHILL, MA USA 01835-0788 TOLL FREE: 877 246-7890 FAX: (781) 245-4531 E-mail: info@apem.com A1 TOGGLE SWITCHES A ESD PROTECTION


    Original     		PDF A7-A10 A11-A13 125VAC 250VAC A14-A15 21000N 30VDC A16-A19 A20-A22 MS35059-23 MS35059-22 MS35059 MS25068-23 MS35059-27 SPDT TOGGLE SWITCH 125VAC 6A MS25068-27 smd marking a60 MS35059-31 ms35059-21

    a7a10

    Abstract: No abstract text available
    Text: 64Mb: x32 DDR SDRAM DOUBLE DATA RATE DDR SDRAM MT46V2M32V1- 512K x 32 x 4 banks MT46V2M32 - 512K x 32 x 4 banks For the latest data sheet revisions, please refer to the Micron Web site: www.micron.com/dramds FEATURES PIN ASSIGNMENT (TOP VIEW) 100-Pin TQFP


    Original     		PDF 096-cycle 2M32DDR-07 a7a10

    W946432AD

    Abstract: No abstract text available
    Text: W946432AD 512K x 4 BANKS × 32 BITS DDR SDRAM GENERAL DESCRIPTION The W946432AD is a high-speed CMOS Double Data Rate synchronous dynamic random access memory organized as 512K words x 4 banks x 32 bits. A bidirectional data strobe DQS is transmitted externally, along with data, for use in data capture at


    Original     		PDF W946432AD W946432AD

    B9535

    Abstract: 1M16
    Text: PRELIMINARY MT4LC1 M16H5 1 MEG x 16 BURST EDO DRAM BURST EDO DRAM 1 MEG x 16 FEATURES PIN ASSIGNMENT Top View • B urst order, interleave or linear, p ro gram m ed by executing W CBR cycle after initialization • Sin gle p o w er su p p ly : +3.3V ±5%


    OCR Scan     		PDF M16H5 024-cycle 44/50-Pin A7-A10 000xB B9535 1M16

    MC6829CL

    Abstract: m6809
    Text: M O TO R O LA Advance Information HMOS MEMORY MANAGEMENT UNIT HIGH DENSITY N-CHANNEL, SILICON-GATEI The principle function of the MC6829 Memory Management Unit (MMU is to expand the address space of the MC6809from 64K bytes to a maximum of 2 Megabytes. Each MMU is capable o f handling four d if­


    OCR Scan     		PDF MC6829 MC6809from A11-A15) PA11-PA20) MC6829L MC6829CL MC68A29L MC68A29CL MC68B29L MC6829S MC6829CL m6809

    128X14

    Abstract: No abstract text available
    Text: T D G l B ß l Q Q G 0 Q 4 Q 7bE S7E » SYNERGY SEMICONDUCTOR • Extremely fast access times: tcHCH = 5/6/7ns max. ■ Extended supply voltage option: The SY101492 is an extremely high-performance 2K x 9 SRAM. It is the first of a family of similar 9-bit wide SRAMs


    OCR Scan     		PDF SY101492 SY1014S2-5ECF SY101492-6ECF SY101492-7ECF E64-1 128X14