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    A76 MARKING CODE Search Results

    A76 MARKING CODE Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    CD4527BNS Texas Instruments CMOS BCD Rate Multiplier 16-SO Visit Texas Instruments
    LMV225URX/NOPB Texas Instruments RF Power Detector for CDMA and WCDMA in micro SMD 4-DSBGA Visit Texas Instruments Buy
    LMH2100TM/NOPB Texas Instruments 50 MHz to 4 GHz 40 dB Logarithmic Power Detector for CDMA and WCDMA 6-DSBGA -40 to 85 Visit Texas Instruments Buy
    LMV226UR/NOPB Texas Instruments RF Power Detectors for CDMA and WCDMA in micro SMD 4-DSBGA Visit Texas Instruments Buy
    LMV228SD/NOPB Texas Instruments RF Power Detector for CDMA and WCDMA in micro SMD 6-WSON Visit Texas Instruments Buy
    LMV225SD/NOPB Texas Instruments RF Power Detector for CDMA and WCDMA in micro SMD 6-WSON -40 to 85 Visit Texas Instruments Buy

    A76 MARKING CODE Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: Rectangular Connectors High Density Standard Module HDSM Connectors Features • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ Basic design offers 38, 78, 120, 152, 200, 304, and 400 contact designs High reliability twist pin and socket per MIL-DTL-83513 and MIL-DTL-55302


    Original     		PDF MIL-DTL-83513 MIL-DTL-55302 positionW-16878

    Untitled

    Abstract: No abstract text available
    Text: OPA373, OPA2373 OPA374 OPA2374, OPA4374 SBOS279E − SEPTEMBER 2003 − REVISED MAY 2008 6.5MHz, 585µA, Rail-to-Rail I/O CMOS Operational Amplifier FEATURES D D D D D D D D DESCRIPTION LOW OFFSET: 5mV max LOW IB: 10pA (max) HIGH BANDWIDTH: 6.5MHz RAIL-TO-RAIL INPUT AND OUTPUT


    Original     		PDF OPA373, OPA2373 OPA374 OPA2374, OPA4374 SBOS279E OPAx373 OT23-5, OT23-6, OT23-8

    Untitled

    Abstract: No abstract text available
    Text: OPA373, OPA2373 OPA374 OPA2374, OPA4374 SBOS279E − SEPTEMBER 2003 − REVISED MAY 2008 6.5MHz, 585µA, Rail-to-Rail I/O CMOS Operational Amplifier FEATURES D D D D D D D D DESCRIPTION LOW OFFSET: 5mV max LOW IB: 10pA (max) HIGH BANDWIDTH: 6.5MHz RAIL-TO-RAIL INPUT AND OUTPUT


    Original     		PDF OPA373, OPA2373 OPA374 OPA2374, OPA4374 SBOS279E OPAx373 OT23-5, OT23-6, OT23-8

    Untitled

    Abstract: No abstract text available
    Text: APPLICABLE STANDARD OPERATING TEMPERATURE RANGE -55 qC TO 50 V AC VOLTAGE RATING STORAGE TEMPERATURE RANGE OPERATING HUMIDITY RANGE STORAGE HUMIDITY RANGE 85 qC 1 CURRENT 0.75A No.a1㨪a8,a77㨪a84  -40 qC TO RELATIVE HUMIDITY  40 % TO 60 qC (2) 95 % RH MAX. (3)


    Original     		PDF a77a84 b77b84 a9a76 b9b76

    Device marking code B12 B13 B14 B15 B16

    Abstract: MARKING b56 Device marking code B52 marking A78 a80 marking code marking code B49 a64 marking code A45 interface marking code B38 HS032E02B
    Text: 32MB SO-RIMMTM Module with 128/144 Mb RDRAMs HCD SO-RIMM Memory Module Specification GENERAL DESCRIPTION This document outlines specifications for HCD’s SO-RIMM Module which consists of 128Mb / 144Mb Direct Rambus DRAM devices. HCD supports applications with 600, 700 and 800 MHz speed grades in both ECC and non-ECC


    Original     		PDF 128Mb 144Mb HS032N02E HS032N02D HS032N02C HS032N02B HS032E02E HS032E02D HS032E02C HS032E02B Device marking code B12 B13 B14 B15 B16 MARKING b56 Device marking code B52 marking A78 a80 marking code marking code B49 a64 marking code A45 interface marking code B38 HS032E02B

    Untitled

    Abstract: No abstract text available
    Text: APPLICABLE STANDARD OPERATING TEMPERATURE RANGE -55 qC TO 50 V AC VOLTAGE RATING STORAGE TEMPERATURE RANGE OPERATING HUMIDITY RANGE STORAGE HUMIDITY RANGE 85 qC 1 CURRENT 0.75A No.a1㨪a8,a77㨪a84  -10 qC TO RELATIVE HUMIDITY  40 % TO 60 qC (2) 95 % RH MAX. (3)


    Original     		PDF a77a84 b77b84 a9a76 b9b76

    EIA-364-65

    Abstract: EIA364-65 EIA-364-23 EIA-364-13 EIA-364-09 EIA-364-20 EIA-364-27 EIA-364-31
    Text: APPLICABLE STANDARD OPERATING TEMPERATURE RANGE -55 qC TO 1 50 V AC VOLTAGE RATING 85 qC 0.75A CURRENT No.a1㨪a8,a77㨪a84 STORAGE TEMPERATURE RANGE OPERATING HUMIDITY RANGE STORAGE HUMIDITY RANGE  -40 qC TO  60 qC (2) 95 % RH MAX. (3) RELATIVE HUMIDITY


    Original     		PDF a77a84 b77b84 a9a76 b9b76 EIA-364-23] EIA-364-65 EIA364-65 EIA-364-23 EIA-364-13 EIA-364-09 EIA-364-20 EIA-364-27 EIA-364-31

    marking code B49

    Abstract: MARKING b56 marking A71 marking A46 B36 Device marking code B12 B13 B14 B15 B16 a80 marking code a64 marking code marking code B38 A45 interface A77 marking
    Text: 256MB SO-RIMMTM Module with 256/288 Mb RDRAMs HCD SO-RIMM Memory Module Specification GENERAL DESCRIPTION This document outlines specifications for HCD’s SO-RIMM Module which consists of 256Mb / 288Mb Direct Rambus DRAM devices. HCD supports applications with 600, 700 and 800 MHz speed grades in both ECC and non-ECC


    Original     		PDF 256MB 288Mb HS256N08E HS256N08D HS256N08C HS256N08B HS256E08E HS256E08D HS256E08C marking code B49 MARKING b56 marking A71 marking A46 B36 Device marking code B12 B13 B14 B15 B16 a80 marking code a64 marking code marking code B38 A45 interface A77 marking

    Untitled

    Abstract: No abstract text available
    Text: V ish ay I nt e rt e chnolo g y, I nc . I INNOVAT AND TEC O L OGY PRV4 N HN potentiometer O 19 62-2012 Resistors - High 2 W Power Rating Industrial Potentiometer Key Benefits • • • • • • • • High 2 W power rating Offers US bushing threads and a fully-sealed IP67 package


    Original     		PDF operat01 14-Feb-11 DocumentVMN-PT0057-1202

    Untitled

    Abstract: No abstract text available
    Text: MS18R3266AH0 Revision History Version 0.1 November 2003 - Preliminary - First Copy - Based on the 1.0 ver. (July 2002) 288Mbit D-die SO-RIMM Module Datasheet. Version 1.0 (May 2004) - Eliminate "Preliminary" Page 0 Rev. 1.0 May 2004 MS18R3266AH0 (32Mx18)*6pcs SO-RIMM™ based on 576Mb A-die, 32s banks,32K/32ms Refresh, 2.5V


    Original     		PDF MS18R3266AH0 288Mbit 32Mx18) 576Mb 32K/32ms

    MARKING CODE B82

    Abstract: a87 marking Marking b66 marking a86 MARKING B83 marking a75
    Text: MR18R162WAG0 Change History Version 1.0 January 2002 * First copy. * Based on the 1.0 ver. 288Mbit RIMM Module Datasheet Version 1.1 (July 2002) * Based on the 1.0 ver.(January 2002) 288Mbit A-die 32d RIMM Module Datasheet * eliminate "Target" etc. Page 0


    Original     		PDF MR18R162WAG0 288Mbit 16Mx18) 32pcs 288Mb 16K/32ms MARKING CODE B82 a87 marking Marking b66 marking a86 MARKING B83 marking a75

    HYR163249G-653

    Abstract: HYR163249G-840 HYR166449G-653 HYR166449G-845 A17 INFINEON
    Text: HYR16xx49G 64MB & 128MB Rambus RIMM Modules Direct RDRAM RIMM Modules with 288 Mbit RDRAMs Overview The Direct Rambus RIMM™ module is a general purpose high-performance memory subsystem suitable for use in a broad range of applications including computer memory, personal computers,


    Original     		PDF HYR16xx49G 128MB 128MB, HYR163249G-653 HYR163249G-840 HYR166449G-653 HYR166449G-845 A17 INFINEON

    a80 marking code

    Abstract: MR18R162WDG0-CM8 B83 004 marking code B38 MR18R162WDG0 MR18R162WDG0-CK8 marking A70 marking code b84
    Text: MR18R162WDG0 Change History Version 1.0 July 2002 * First copy. * Based on the 1.1 ver.(July 2002) 288Mbit A-die 32d RIMM Module Datasheet Page 0 Version 1.0 July. 2002 MR18R162WDG0 (16Mx18)*32pcs RIMM Module based on 288Mb D-die, 32s banks,16K/32ms Ref, 2.5V


    Original     		PDF MR18R162WDG0 288Mbit 16Mx18) 32pcs 288Mb 16K/32ms a80 marking code MR18R162WDG0-CM8 B83 004 marking code B38 MR18R162WDG0 MR18R162WDG0-CK8 marking A70 marking code b84

    a74 marking code

    Abstract: MARKING B82 MARKING B83 a80 marking code B11 marking code Device marking code B12 B13 B14 B15 B16 marking A45 a64 marking code A79 marking code a86 diode
    Text: MR18R162WDG0 Change History Version 1.0 July 2002 * First copy. * Based on the 1.1 ver.(July 2002) 288Mbit A-die 32d RIMM Datasheet Page 0 Version 1.0 July. 2002 MR18R162WDG0 (16Mx18)*32pcs RIMMTM Module based on 288Mb D-die, 32s banks,16K/32ms Ref, 2.5V


    Original     		PDF MR18R162WDG0 288Mbit 16Mx18) 32pcs 288Mb 16K/32ms a74 marking code MARKING B82 MARKING B83 a80 marking code B11 marking code Device marking code B12 B13 B14 B15 B16 marking A45 a64 marking code A79 marking code a86 diode

    a80 marking code

    Abstract: marking A32 marking A86 marking code B38 samsung electronics logo
    Text: MR16R0828ER T 0 Change History Version 1.0 (July 2002) * First copy. * Based on the 1.0ver. 128Mb D-die Consumer RIMM Module Datasheet. Page 0 Version 1.0 July 2002 MR16R0828ER(T)0 (8Mx16)*8pcs Consumer RIMM Module based on 128Mb E-die, 32s banks,16K/32ms Ref, 2.5V


    Original     		PDF MR16R0828ER 128Mb 8Mx16) 16K/32ms a80 marking code marking A32 marking A86 marking code B38 samsung electronics logo

    Untitled

    Abstract: No abstract text available
    Text: MS18R1622 4/8 AH0 Revision History Version 1.0 (December 2001) - First copy. - Based on the 1.1 ver. 256/288Mbit RDRAMs(A-die) base RIMM Datasheet. Version 1.1(July 2002) - Based on the 1.0 ver. 256/288Mbit RDRAMs(A-die) base SO-RIMM Datasheet. - Add 1066MHz-35 binning


    Original     		PDF MS18R1622 256/288Mbit 1066MHz-35 16Mx18) 288Mb 16K/32ms

    marking B44

    Abstract: DH0 165
    Text: MS18R1622 4/8 DH0 Revision History Version 1.0 (July 2002) - Based on the 1.1 ver. 256/288Mbit RDRAMs(A-die) base SO-RIMM Datasheet. Rev. 1.0 July 2002 Page 0 MS18R1622(4/8)DH0 ( 16Mx18)*2(/4/8)pcs SO-RIMM based on 288Mb D-die, 32s banks,16K/32ms Refresh, 2.5V


    Original     		PDF MS18R1622 256/288Mbit 16Mx18) 288Mb 16K/32ms marking B44 DH0 165

    Untitled

    Abstract: No abstract text available
    Text: MR16R0828DR T 0 Change History Version 1.0 (July 2002) * First copy. * Based on the 1.0ver. 128Mb B-die Consumer RIMM Module Datasheet. Page 0 Version 1.0 July 2002 MR16R0828DR(T)0 (8Mx16)*8pcs Consumer RIMM Module based on 128Mb D-die, 32s banks,16K/32ms Ref, 2.5V


    Original     		PDF MR16R0828DR 128Mb 8Mx16) 16K/32ms

    a74 marking code

    Abstract: A37 diode marking .A55 transistor marking A21 256-288 MBit Direct RDRAM MS18R1622AH0-CK8 MS18R1624AH0-CK8 a92 614
    Text: MS18R1622 4/8 AH0 Revision History Version 1.0 (December 2001) - First copy. - Based on the 1.1 ver.(August 2001) 256/288Mbit A-die RIMM Datasheet. Version 1.1(July 2002) - Based on the 1.0 ver.(December 2001) 288Mbit A-die SO-RIMM Datasheet. - Add 1066MHz-35 binning


    Original     		PDF MS18R1622 256/288Mbit 288Mbit 1066MHz-35 16Mx18) 288Mb 16K/32ms a74 marking code A37 diode marking .A55 transistor marking A21 256-288 MBit Direct RDRAM MS18R1622AH0-CK8 MS18R1624AH0-CK8 a92 614

    b41 Marking

    Abstract: No abstract text available
    Text: MR18R162WEG0 Change History Version 0.1 January 2004 * First copy. * Based on the 1.0 ver.(July 2002) 288Mbit D-die 32d RIMM Module Datasheet Version 1.0 (May 2004) * Eliminate "Preliminary" Page 0 Version 1.0 May 2004 MR18R162WEG0 (16Mx18)*32pcs RIMM Module based on 288Mb E-die, 32s banks,16K/32ms Ref, 2.5V


    Original     		PDF MR18R162WEG0 288Mbit 16Mx18) 32pcs 288Mb 16K/32ms b41 Marking

    A76 MARKING CODE

    Abstract: a77 package marking a80 marking code marking A32 marking A45 marking code B38 MR18R162WEG0-CM8 MARKING B17 MARKING CODE B82 marking a86
    Text: Preliminary MR18R162WEG0 Change History Version 0.1 January 2004 * First copy. * Based on the 1.0 ver.(July 2002) 288Mbit D-die 32d RIMM Module Datasheet Page 0 Version 0.1 Jan. 2004 Preliminary MR18R162WEG0 (16Mx18)*32pcs RIMM Module based on 288Mb E-die, 32s banks,16K/32ms Ref, 2.5V


    Original     		PDF MR18R162WEG0 288Mbit 16Mx18) 32pcs 288Mb 16K/32ms A76 MARKING CODE a77 package marking a80 marking code marking A32 marking A45 marking code B38 MR18R162WEG0-CM8 MARKING B17 MARKING CODE B82 marking a86

    transistor marking A21

    Abstract: a74 marking code b82 400 B83 004 marking B44 MARKING CODE b48
    Text: MR18R162WAG0 Change History Version 1.0 January 2002 * First copy. * Based on the 1.0 ver. 288Mbit RDRAMs RIMM Datasheet Version 1.1 (July 2002) * Based on the 1.0 ver.(January 2002) 288Mbit A-die 32d RIMM Datasheet * eliminate "Target" etc. Page 0 Version 1.1 July. 2002


    Original     		PDF MR18R162WAG0 288Mbit 16Mx18) 32pcs 288Mb 16K/32ms transistor marking A21 a74 marking code b82 400 B83 004 marking B44 MARKING CODE b48

    Untitled

    Abstract: No abstract text available
    Text: MS18R1622 4/8 DH0 Revision History Version 1.0 (July 2002) - Based on the 1.1 ver. (July 2002) 288Mbit A-die SO-RIMM Module Datasheet. Page 0 Rev. 1.0 July 2002 MS18R1622(4/8)DH0 (16Mx18)*2(4/8)pcs SO-RIMM™ based on 288Mb D-die, 32s banks,16K/32ms Refresh, 2.5V


    Original     		PDF MS18R1622 288Mbit 16Mx18) 288Mb 16K/32ms

    MARKING CODE 11gb

    Abstract: No abstract text available
    Text: MR18R326GAG0 Preliminary Change History Version 0.1 September 2003 - Preliminary * First copy. * Based on the 1.0 ver. (July 2002) 256/288Mbit D-die RIMM Datasheet Page 0 Version 0.1 Sept. 2003 MR18R326GAG0 Preliminary (32Mx18)*16pcs RIMMTM Module based on 576Mb A-die, 32s banks,32K/32ms Ref, 2.5V


    Original     		PDF MR18R326GAG0 256/288Mbit 32Mx18) 16pcs 576Mb 32K/32ms MARKING CODE 11gb