Untitled
Abstract: No abstract text available
Text: POWER TYPE 金屬皮膜固定電阻器 RNU FIXED METAL FILM RESISTOR Standard Type 小型金屬皮膜固定電阻器 RNS FIXED METAL FILM RESISTOR (Small Type) •結構圖 Construction 1 端 2 瓷 棒 Ceramic base S1/2W Dark blue ;others Light blue, 3
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Abstract: No abstract text available
Text: POWER TYPE 氧化金屬膜電阻器 RSU METAL OXIDE FILM RESISTOR Standard Type 小型氧化金屬膜電阻器 RSS METAL OXIDE FILM RESISTOR (Small Type 超小型氧化金屬膜電阻器 RSP METAL OXIDE FILM RESISTOR (Super Small Type) •結構圖 Construction
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30min)
than100â
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Untitled
Abstract: No abstract text available
Text: POWER TYPE RSU 氧化金屬膜電阻器 RSS 小型氧化金屬膜電阻器 RSP 超小型氧化金屬膜電阻器 METAL OXIDE FILM RESISTOR Standard Type METAL OXIDE FILM RESISTOR (Small Type) METAL OXIDE FILM RESISTOR (Super Small Type) •結構圖 Construction
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than100Î
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Abstract: No abstract text available
Text: DISCHARGE PATH RESISTOR RMU 金屬釉電阻器 RMS 小型金屬釉電阻器 RMH 大型金屬釉電阻器 METAL GLAZE RESISTOR Standard Type METAL GLAZE RESISTOR (Small Type) METAL GLAZE RESISTOR (Large-scale Type) •結構圖 Construction 塗裝顏色: Coating Color
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A64Z
Abstract: SGA-6489 SGA-6489 A64Z MARKING A64 SOT-89 sga6489 a64 marking code 5.1 amplifier schematic A64 marking amplifier marking A64 SGA6489Z
Text: SGA-6489 Z SGA-6489(Z) Low Noise, High Gain SiGe HBT DC to 3500MHz, CASCADABLE SiGe HBT MMIC AMPLIFIER Package: SOT-89 Product Description Features The SGA-6489 is a high performance SiGe HBT MMIC Amplifier. A Darlington configuration featuring one-micron emitters provides high FT and
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SGA-6489
3500MHz,
OT-89
SGA6489
SGA6489Z
SGA-6489
SGA-6489Z
A64Z
SGA-6489 A64Z
MARKING A64 SOT-89
a64 marking code
5.1 amplifier schematic
A64 marking amplifier
marking A64
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Abstract: No abstract text available
Text: SGA-6489 Z SGA-6489(Z) Low Noise, High Gain SiGe HBT DC to 3500MHz, CASCADABLE SiGe HBT MMIC AMPLIFIER RFMD Green, RoHS Compliant, Pb-Free (Z Part Number) Package: SOT-89 Product Description Features The SGA-6489 is a high performance SiGe HBT MMIC Amplifier. A Darlington configuration featuring one-micron emitters provides high FT and
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SGA-6489
3500MHz,
OT-89
SGA6489
SGA6489Z
SGA-6489
SGA-6489Z
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Device marking code B12 B13 B14 B15 B16
Abstract: MARKING b56 Device marking code B52 marking A78 a80 marking code marking code B49 a64 marking code A45 interface marking code B38 HS032E02B
Text: 32MB SO-RIMMTM Module with 128/144 Mb RDRAMs HCD SO-RIMM Memory Module Specification GENERAL DESCRIPTION This document outlines specifications for HCD’s SO-RIMM Module which consists of 128Mb / 144Mb Direct Rambus DRAM devices. HCD supports applications with 600, 700 and 800 MHz speed grades in both ECC and non-ECC
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128Mb
144Mb
HS032N02E
HS032N02D
HS032N02C
HS032N02B
HS032E02E
HS032E02D
HS032E02C
HS032E02B
Device marking code B12 B13 B14 B15 B16
MARKING b56
Device marking code B52
marking A78
a80 marking code
marking code B49
a64 marking code
A45 interface
marking code B38
HS032E02B
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marking code B49
Abstract: MARKING b56 marking A71 marking A46 B36 Device marking code B12 B13 B14 B15 B16 a80 marking code a64 marking code marking code B38 A45 interface A77 marking
Text: 256MB SO-RIMMTM Module with 256/288 Mb RDRAMs HCD SO-RIMM Memory Module Specification GENERAL DESCRIPTION This document outlines specifications for HCD’s SO-RIMM Module which consists of 256Mb / 288Mb Direct Rambus DRAM devices. HCD supports applications with 600, 700 and 800 MHz speed grades in both ECC and non-ECC
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256MB
288Mb
HS256N08E
HS256N08D
HS256N08C
HS256N08B
HS256E08E
HS256E08D
HS256E08C
marking code B49
MARKING b56
marking A71
marking A46 B36
Device marking code B12 B13 B14 B15 B16
a80 marking code
a64 marking code
marking code B38
A45 interface
A77 marking
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Abstract: No abstract text available
Text: MS18R3266AH0 Revision History Version 0.1 November 2003 - Preliminary - First Copy - Based on the 1.0 ver. (July 2002) 288Mbit D-die SO-RIMM Module Datasheet. Version 1.0 (May 2004) - Eliminate "Preliminary" Page 0 Rev. 1.0 May 2004 MS18R3266AH0 (32Mx18)*6pcs SO-RIMM™ based on 576Mb A-die, 32s banks,32K/32ms Refresh, 2.5V
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MS18R3266AH0
288Mbit
32Mx18)
576Mb
32K/32ms
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MARKING CODE B82
Abstract: a87 marking Marking b66 marking a86 MARKING B83 marking a75
Text: MR18R162WAG0 Change History Version 1.0 January 2002 * First copy. * Based on the 1.0 ver. 288Mbit RIMM Module Datasheet Version 1.1 (July 2002) * Based on the 1.0 ver.(January 2002) 288Mbit A-die 32d RIMM Module Datasheet * eliminate "Target" etc. Page 0
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MR18R162WAG0
288Mbit
16Mx18)
32pcs
288Mb
16K/32ms
MARKING CODE B82
a87 marking
Marking b66
marking a86
MARKING B83
marking a75
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a80 marking code
Abstract: MR18R162WDG0-CM8 B83 004 marking code B38 MR18R162WDG0 MR18R162WDG0-CK8 marking A70 marking code b84
Text: MR18R162WDG0 Change History Version 1.0 July 2002 * First copy. * Based on the 1.1 ver.(July 2002) 288Mbit A-die 32d RIMM Module Datasheet Page 0 Version 1.0 July. 2002 MR18R162WDG0 (16Mx18)*32pcs RIMM Module based on 288Mb D-die, 32s banks,16K/32ms Ref, 2.5V
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MR18R162WDG0
288Mbit
16Mx18)
32pcs
288Mb
16K/32ms
a80 marking code
MR18R162WDG0-CM8
B83 004
marking code B38
MR18R162WDG0
MR18R162WDG0-CK8
marking A70
marking code b84
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a74 marking code
Abstract: MARKING B82 MARKING B83 a80 marking code B11 marking code Device marking code B12 B13 B14 B15 B16 marking A45 a64 marking code A79 marking code a86 diode
Text: MR18R162WDG0 Change History Version 1.0 July 2002 * First copy. * Based on the 1.1 ver.(July 2002) 288Mbit A-die 32d RIMM Datasheet Page 0 Version 1.0 July. 2002 MR18R162WDG0 (16Mx18)*32pcs RIMMTM Module based on 288Mb D-die, 32s banks,16K/32ms Ref, 2.5V
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MR18R162WDG0
288Mbit
16Mx18)
32pcs
288Mb
16K/32ms
a74 marking code
MARKING B82
MARKING B83
a80 marking code
B11 marking code
Device marking code B12 B13 B14 B15 B16
marking A45
a64 marking code
A79 marking code
a86 diode
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HYR163249G-653
Abstract: HYR163249G-840 HYR166449G-653 HYR166449G-845 A17 INFINEON
Text: HYR16xx49G 64MB & 128MB Rambus RIMM Modules Direct RDRAM RIMM Modules with 288 Mbit RDRAMs Overview The Direct Rambus RIMM™ module is a general purpose high-performance memory subsystem suitable for use in a broad range of applications including computer memory, personal computers,
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HYR16xx49G
128MB
128MB,
HYR163249G-653
HYR163249G-840
HYR166449G-653
HYR166449G-845
A17 INFINEON
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b41 Marking
Abstract: No abstract text available
Text: MR18R162WEG0 Change History Version 0.1 January 2004 * First copy. * Based on the 1.0 ver.(July 2002) 288Mbit D-die 32d RIMM Module Datasheet Version 1.0 (May 2004) * Eliminate "Preliminary" Page 0 Version 1.0 May 2004 MR18R162WEG0 (16Mx18)*32pcs RIMM Module based on 288Mb E-die, 32s banks,16K/32ms Ref, 2.5V
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MR18R162WEG0
288Mbit
16Mx18)
32pcs
288Mb
16K/32ms
b41 Marking
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transistor marking A21
Abstract: a74 marking code b82 400 B83 004 marking B44 MARKING CODE b48
Text: MR18R162WAG0 Change History Version 1.0 January 2002 * First copy. * Based on the 1.0 ver. 288Mbit RDRAMs RIMM Datasheet Version 1.1 (July 2002) * Based on the 1.0 ver.(January 2002) 288Mbit A-die 32d RIMM Datasheet * eliminate "Target" etc. Page 0 Version 1.1 July. 2002
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MR18R162WAG0
288Mbit
16Mx18)
32pcs
288Mb
16K/32ms
transistor marking A21
a74 marking code
b82 400
B83 004
marking B44
MARKING CODE b48
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A74 marking
Abstract: a80 marking code MS18R3266AH0-CT9 a74 marking code diode code B74 marking A32 marking code B38
Text: MS18R3266AH0 Preliminary Revision History Version 0.1 November 2003 - Preliminary - Based on the 1.0 ver. (July 2002) 288Mbit D-die SO-RIMM Module Datasheet. Page 0 Rev. 0.1 Nov. 2003 MS18R3266AH0 Preliminary (32Mx18)*6pcs SO-RIMM™ based on 576Mb A-die, 32s banks,32K/32ms Refresh, 2.5V
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MS18R3266AH0
288Mbit
32Mx18)
576Mb
32K/32ms
A74 marking
a80 marking code
MS18R3266AH0-CT9
a74 marking code
diode code B74
marking A32
marking code B38
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Abstract: No abstract text available
Text: OPA381 OPA2381 SBOS313B − AUGUST 2004 − REVISED NOVEMBER 2004 Precision, Low Power, 18MHz Transimpedance Amplifier FEATURES DESCRIPTION D OVER 250kHz TRANSIMPEDANCE D D D D D D D D D D D D The OPA381 family of transimpedance amplifiers provides 18MHz of Gain Bandwidth GBW , with extremely high
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OPA381
OPA2381
SBOS313B
18MHz
250kHz
OPA381
18MHz
10nV/â
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a80 marking code
Abstract: marking A32 marking A86 marking code B38 samsung electronics logo
Text: MR16R0828ER T 0 Change History Version 1.0 (July 2002) * First copy. * Based on the 1.0ver. 128Mb D-die Consumer RIMM Module Datasheet. Page 0 Version 1.0 July 2002 MR16R0828ER(T)0 (8Mx16)*8pcs Consumer RIMM Module based on 128Mb E-die, 32s banks,16K/32ms Ref, 2.5V
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MR16R0828ER
128Mb
8Mx16)
16K/32ms
a80 marking code
marking A32
marking A86
marking code B38
samsung electronics logo
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Untitled
Abstract: No abstract text available
Text: MS18R1622 4/8 AH0 Revision History Version 1.0 (December 2001) - First copy. - Based on the 1.1 ver. 256/288Mbit RDRAMs(A-die) base RIMM Datasheet. Version 1.1(July 2002) - Based on the 1.0 ver. 256/288Mbit RDRAMs(A-die) base SO-RIMM Datasheet. - Add 1066MHz-35 binning
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MS18R1622
256/288Mbit
1066MHz-35
16Mx18)
288Mb
16K/32ms
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marking B44
Abstract: DH0 165
Text: MS18R1622 4/8 DH0 Revision History Version 1.0 (July 2002) - Based on the 1.1 ver. 256/288Mbit RDRAMs(A-die) base SO-RIMM Datasheet. Rev. 1.0 July 2002 Page 0 MS18R1622(4/8)DH0 ( 16Mx18)*2(/4/8)pcs SO-RIMM based on 288Mb D-die, 32s banks,16K/32ms Refresh, 2.5V
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MS18R1622
256/288Mbit
16Mx18)
288Mb
16K/32ms
marking B44
DH0 165
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Abstract: No abstract text available
Text: MR16R0828DR T 0 Change History Version 1.0 (July 2002) * First copy. * Based on the 1.0ver. 128Mb B-die Consumer RIMM Module Datasheet. Page 0 Version 1.0 July 2002 MR16R0828DR(T)0 (8Mx16)*8pcs Consumer RIMM Module based on 128Mb D-die, 32s banks,16K/32ms Ref, 2.5V
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MR16R0828DR
128Mb
8Mx16)
16K/32ms
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a74 marking code
Abstract: A37 diode marking .A55 transistor marking A21 256-288 MBit Direct RDRAM MS18R1622AH0-CK8 MS18R1624AH0-CK8 a92 614
Text: MS18R1622 4/8 AH0 Revision History Version 1.0 (December 2001) - First copy. - Based on the 1.1 ver.(August 2001) 256/288Mbit A-die RIMM Datasheet. Version 1.1(July 2002) - Based on the 1.0 ver.(December 2001) 288Mbit A-die SO-RIMM Datasheet. - Add 1066MHz-35 binning
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MS18R1622
256/288Mbit
288Mbit
1066MHz-35
16Mx18)
288Mb
16K/32ms
a74 marking code
A37 diode
marking .A55
transistor marking A21
256-288 MBit Direct RDRAM
MS18R1622AH0-CK8
MS18R1624AH0-CK8
a92 614
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Abstract: No abstract text available
Text: MS18R1622 4/8 AH0 Revision History Version 1.0 (December 2001) - First copy. - Based on the 1.1 ver.(August 2001) 256/288Mbit A-die RIMM Module Datasheet. Version 1.1(July 2002) - Based on the 1.0 ver.(December 2001) 288Mbit A-die SO-RIMM Module Datasheet.
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MS18R1622
256/288Mbit
288Mbit
1066MHz-35
16Mx18)
288Mb
16K/32ms
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a80 marking code
Abstract: a64 marking code B58 608 diode 910 b34 MS18R1622EH0-CM8 MS18R1622EH0-CT9 MS18R1624EH0-CM8 MS18R1624EH0-CT9 MS18R1628EH0-CT9 MS18R1622EH0-CK8
Text: Preliminary MS18R1622 4/8 EH0 Revision History Version 0.1 (February 2004) - Based on the 1.0 ver. (July 2002) 288Mbit D-die SO-RIMM Module Datasheet. Page 0 Rev. 0.1 Feb. 2004 Preliminary MS18R1622(4/8)EH0 (16Mx18)*2(4/8)pcs SO-RIMM™ based on 288Mb E-die, 32s banks,16K/32ms Refresh, 2.5V
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MS18R1622
288Mbit
16Mx18)
288Mb
16K/32ms
a80 marking code
a64 marking code
B58 608
diode 910 b34
MS18R1622EH0-CM8
MS18R1622EH0-CT9
MS18R1624EH0-CM8
MS18R1624EH0-CT9
MS18R1628EH0-CT9
MS18R1622EH0-CK8
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