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    A2A21 Price and Stock

    Hirose Electric Co Ltd MQ115-8PA-2A(21)

    CONN RCPT MALE THT 8POS
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    DigiKey MQ115-8PA-2A(21) Tray
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    Hirose Electric Co Ltd MQ115-4PA-2A(21)

    CONN RCPT MALE THT 4POS
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    DigiKey MQ115-4PA-2A(21) Tray
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    Hirose Electric Co Ltd QR-P1-PCA2A-211(15)

    CONTACT PIN SIGNAL 24-28AWG GOLD
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    DigiKey QR-P1-PCA2A-211(15) Reel 5,000
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    Hirose Electric Co Ltd QR/P1-PCA2A-211(15)

    Contact Pin Crimp Straight Cable Mount - Tape and Reel (Alt: QR/P1-PCA2A-211(15)
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    Avnet Americas QR/P1-PCA2A-211(15) Reel 5,000
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    Sager QR/P1-PCA2A-211(15)
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    Metal Work Pneumatic USA Inc 128BA2A215OP

    AIR TANK | Metal Work Pneumatic 128BA2A215OP
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    RS 128BA2A215OP Bulk 5 Weeks 1
    • 1 $431.95
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    Find more A2A21 price and stock on Findchips.com

    A2A21 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: M58CR064C, M58CR064D M58CR064P, M58CR064Q 64 Mbit 4Mb x 16, Dual Bank, Burst 1.8V Supply Flash Memory FEATURES SUMMARY • SUPPLY VOLTAGE Figure 1. Package – VDD = 1.65V to 2V for Program, Erase and Read – VDDQ = 1.65V to 3.3V for I/O Buffers – VPP = 12V for fast Program (optional)


    Original     		PDF M58CR064C, M58CR064D M58CR064P, M58CR064Q 54MHz 120ns TFBGA56

    A0-A21

    Abstract: CR10 M58WR064EB M58WR064ET VFBGA56
    Text: M58WR064ET M58WR064EB 64 Mbit 4Mb x 16, Multiple Bank, Burst 1.8V Supply Flash Memory FEATURES SUMMARY • SUPPLY VOLTAGE Figure 1. Package – VDD = 1.65V to 2.2V for Program, Erase and Read – VDDQ = 1.65V to 3.3V for I/O Buffers – VPP = 12V for fast Program (optional)


    Original     		PDF M58WR064ET M58WR064EB 54MHz VFBGA56 A0-A21 CR10 M58WR064EB M58WR064ET VFBGA56

    IS61NLF204836B

    Abstract: No abstract text available
    Text: IS61NLF204836B/IS61NVF/NVVF204836B IS61NLF409618B/IS61NVF/NVVF409618B 2M x 36 and 4M x 18 72Mb, FLOW THROUGH 'NO WAIT' STATE BUS SRAM ADVANCED INFORMATION FEBRUARY 2013 FEATURES DESCRIPTION • 100 percent bus utilization The 72 Meg product family features high-speed, low-power


    Original     		PDF IS61NLF204836B/IS61NVF/NVVF204836B IS61NLF409618B/IS61NVF/NVVF409618B 100-pin 119-ball 165ball 4836B/IS61NVF/NVVF204836B IS61NLF204836B

    Untitled

    Abstract: No abstract text available
    Text: M29W640FT M29W640FB 64 Mbit 8Mb x8 or 4Mb x16, Page, Boot Block 3V Supply Flash Memory Features summary • Supply Voltage – VCC = 2.7V to 3.6V for Program, Erase, Read – VPP =12 V for Fast Program (optional) ■ Asynchronous Random/Page Read – Page Width: 4 Words


    Original     		PDF M29W640FT M29W640FB

    Untitled

    Abstract: No abstract text available
    Text: M36WT864TF M36WT864BF 64 Mbit 4Mb x16, Multiple Bank, Burst Flash Memory and 8 Mbit (512K x16) SRAM, Multiple Memory Product PRODUCT PREVIEW FEATURES SUMMARY • SUPPLY VOLTAGE SRAM 8 Mbit (512K x 16 bit) – VDDF = 1.65V to 2.2V ■ – VDDS = VDDQF = 2.7V to 3.3V


    Original     		PDF M36WT864TF M36WT864BF 100ns M36WT864TF: 8810h M36WT864BF: 8811h

    Untitled

    Abstract: No abstract text available
    Text: M29DW640D 64 Mbit 8Mb x8 or 4Mb x16, Multiple Bank, Page, Boot Block 3V Supply Flash Memory PRELIMINARY DATA FEATURES SUMMARY • SUPPLY VOLTAGE Figure 1. Packages – VCC = 2.7V to 3.6V for Program, Erase and Read ■ – VPP =12V for Fast Program (optional)


    Original     		PDF M29DW640D TSOP48 24Mbit TFBGA63

    Untitled

    Abstract: No abstract text available
    Text: M29W640FT M29W640FT 64 Mbit 8Mb x8 or 4Mb x16, Page, Boot Block 3V supply Flash memory Feature summary • Supply Voltage – VCC = 2.7V to 3.6V for Program, Erase, Read – VPP =12 V for Fast Program (optional) ■ Asynchronous Random/Page Read – Page Width: 4 Words


    Original     		PDF M29W640FT M29W640FT

    Untitled

    Abstract: No abstract text available
    Text: M29DW640D 64 Mbit 8Mb x8 or 4Mb x16, Multiple Bank, Page, Boot Block 3V Supply Flash Memory FEATURES SUMMARY • SUPPLY VOLTAGE Figure 1. Packages – VCC = 2.7V to 3.6V for Program, Erase and Read – VPP =12V for Fast Program (optional) ■ ASYNCHRONOUS PAGE READ MODE


    Original     		PDF M29DW640D TSOP48 24Mbit TFBGA63

    88CAh

    Abstract: No abstract text available
    Text: M58CR064C M58CR064D 64 Mbit 4Mb x16, Dual Bank, Burst 1.8V Supply Flash Memory PRODUCT PREVIEW • SUPPLY VOLTAGE – VDD = VDDQ = 1.65V to 2.0V for Program, Erase and Read ■ – VPP = 12V for fast Program (optional) SYNCHRONOUS / ASYNCHRONOUS READ FBGA


    Original     		PDF M58CR064C M58CR064D 54MHz 100ns TFBGA56 A0-A21 88CAh

    Untitled

    Abstract: No abstract text available
    Text: M29DW640D 64 Mbit 8Mb x8 or 4Mb x16, Multiple Bank, Page, Boot Block 3V Supply Flash Memory FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ SUPPLY VOLTAGE – VCC = 2.7V to 3.6V for Program, Erase and Read – VPP =12V for Fast Program (optional)


    Original     		PDF M29DW640D 24Mbit

    Untitled

    Abstract: No abstract text available
    Text: M29DW640D 64 Mbit 8Mb x8 or 4Mb x16, Multiple Bank, Page, Boot Block 3V Supply Flash Memory PRELIMINARY DATA FEATURES SUMMARY • SUPPLY VOLTAGE Figure 1. Packages – VCC = 2.7V to 3.6V for Program, Erase and Read ■ – VPP =12V for Fast Program (optional)


    Original     		PDF M29DW640D TSOP48 24Mbit TFBGA63

    Untitled

    Abstract: No abstract text available
    Text: M58CR064C M58CR064D 64 Mbit 4Mb x16, Dual Bank, Burst 1.8V Supply Flash Memory PRODUCT PREVIEW • SUPPLY VOLTAGE – VDD = 1.65V to 2V for Program, Erase and Read – VDDQ = 1.65V to 3.3V for I/O Buffers – VPP = 12V for fast Program (optional) ■ FBGA


    Original     		PDF M58CR064C M58CR064D 54MHz 100ns TFBGA56

    SDRAM64M32

    Abstract: DC209 ITRON BT16B uPD705102 V830 V832 PIC111 D234 0 3H V8322 DBC3
    Text: お客様各位 カタログ等資料中の旧社名の扱いについて 2010 年 4 月 1 日を以って NEC エレクトロニクス株式会社及び株式会社ルネサステクノロジ が合併し両社の全ての事業が当社に承継されております。従いまして、本資料中には旧社


    Original     		PDF PD705102 U13577JJ4V0UM004 U13577JJ4V0UM 14NMI. AV832. U1357 FAX044435-9608 SDRAM64M32 DC209 ITRON BT16B uPD705102 V830 V832 PIC111 D234 0 3H V8322 DBC3

    Untitled

    Abstract: No abstract text available
    Text: IS61 64 NLF102436B/IS61(64)NVF/NVVF102436B IS61(64)NLF204818B/IS61(64)NVF/NVVF204818B ADVANCED INFORMATION FEBRUARY 2013 1M x 36, 2M x 18 36Mb, FLOW THROUGH 'NO WAIT' STATE BUS SRAM FEATURES DESCRIPTION • 100 percent bus utilization The 72 Meg product family features high-speed, low-power


    Original     		PDF NLF102436B/IS61 NVF/NVVF102436B NLF204818B/IS61 NVF/NVVF204818B

    Untitled

    Abstract: No abstract text available
    Text: MX29LV640MT/B FEATURES 64M-BIT [8M x 8/4M x 16] SINGLE VOLTAGE 3V ONLY FLASH MEMORY GENERAL FEATURES • Single Power Supply Operation - 2.7 to 3.6 volt for read, erase, and program operations • 8,388,608 x 8 / 4,194,304 x 16 switchable • Sector structure


    Original     		PDF MX29LV640MT/B 64M-BIT 20-year PM1079

    29LV640M

    Abstract: No abstract text available
    Text: MX29LV64xM H/L 64M-BIT SINGLE VOLTAGE 3V ONLY UNIFORM SECTOR FLASH MEMORY FEATURES GENERAL FEATURES • Single Power Supply Operation - 2.7 to 3.6 volt for read, erase, and program operations • Configuration - 8,388,608 x 8 / 4,194,304 x 16 switchable for


    Original     		PDF MX29LV64xM 64M-BIT MX29LV640M MX29LV641M 128-word/256-byte f/22/2005 29LV640M

    Q002

    Abstract: NUMONYX A0-A21 AEC-Q100 M29W064F M29W064FB M29W064FT A2A21
    Text: M29W064FT M29W064FB 64 Mbit 8 Mbit x 8 or 4 Mbit x 16, page, boot block 3 V supply Flash memory Preliminary Data Features • Supply voltage – VCC = 2.7 V to 3.6 V for program, erase, read – VPP =12 V for fast program (optional) ■ Asynchronous random/page read


    Original     		PDF M29W064FT M29W064FB Q002 NUMONYX A0-A21 AEC-Q100 M29W064F M29W064FB M29W064FT A2A21

    Untitled

    Abstract: No abstract text available
    Text: Low Power Pseudo SRAM 1M word x 16 bit CS26LV16163 Revision History Rev. No. 2.0 History Initial issue with new naming rule Issue Date Mar.01,2005 Remark 1 Rev. 2.0 Chiplus reserves the right to change product or specification without notice. Low Power Pseudo SRAM


    Original     		PDF CS26LV16163 CS26LV16163 70/85ns 48Ball

    MX29LV640MTTC-90G

    Abstract: MX29LV640MBTC-90G gunther reed relay 3570 MX29LV640 MX29LV640MTTC-90 A0-A21 MX29LV640MT Q0-Q15
    Text: MX29LV640MT/B FEATURES 64M-BIT [8M x 8/4M x 16] SINGLE VOLTAGE 3V ONLY FLASH MEMORY GENERAL FEATURES • Single Power Supply Operation - 2.7 to 3.6 volt for read, erase, and program operations • 8,388,608 x 8 / 4,194,304 x 16 switchable • Sector structure


    Original     		PDF MX29LV640MT/B 64M-BIT 128-word MX29LV640MTTC-90G MX29LV640MBTC-90G gunther reed relay 3570 MX29LV640 MX29LV640MTTC-90 A0-A21 MX29LV640MT Q0-Q15

    A0-A21

    Abstract: JESD97 M29W640F M29W640FB M29W640FT TFBGA48
    Text: M29W640FT M29W640FB 64 Mbit 8Mb x8 or 4Mb x16, Page, Boot Block 3V Supply Flash Memory Feature summary • Supply voltage – VCC = 2.7V to 3.6V for Program, Erase, Read – VPP =12 V for Fast Program (optional) ■ Asynchronous Random/Page Read – Page Width: 4 Words


    Original     		PDF M29W640FT M29W640FB TFBGA48 A0-A21 JESD97 M29W640F M29W640FB M29W640FT TFBGA48

    Untitled

    Abstract: No abstract text available
    Text: M29DW640D 64 Mbit 8Mb x8 or 4Mb x16, Multiple Bank, Page, Boot Block 3V Supply Flash Memory PRELIMINARY DATA FEATURES SUMMARY • SUPPLY VOLTAGE Figure 1. Packages – VCC = 2.7V to 3.6V for Program, Erase and Read ■ – VPP =12V for Fast Program (optional)


    Original     		PDF M29DW640D TSOP48 24Mbit TFBGA63

    128M NOR FLASH MXIC

    Abstract: 29LV128M 8F0000-FFFFF MX29LV128MHTC-90Q MX29LV128MHTI 29LV128 SA224-SA227 Q0-Q15 SA10 MX29LV128MHTI-10
    Text: MX29LV128M H/L 128M-BIT SINGLE VOLTAGE 3V ONLY UNIFORM SECTOR FLASH MEMORY FEATURES GENERAL FEATURES • Single Power Supply Operation - 2.7 to 3.6 volt for read, erase, and program operations • Configuration - 16,777,216 x 8 / 8,388,608 x 16 switchable


    Original     		PDF MX29LV128M 128M-BIT 128-word fac8/2006 128M NOR FLASH MXIC 29LV128M 8F0000-FFFFF MX29LV128MHTC-90Q MX29LV128MHTI 29LV128 SA224-SA227 Q0-Q15 SA10 MX29LV128MHTI-10

    Untitled

    Abstract: No abstract text available
    Text: M29W640FT M29W640FB 64 Mbit 8Mb x8 or 4Mb x16, Page, Boot Block 3V Supply Flash Memory PRELIMINARY DATA Features Summary • SUPPLY VOLTAGE – VCC = 2.7V to 3.6V for Program, Erase, Read – VPP =12 V for Fast Program (optional) ■ ASYNCHRONOUS RANDOM/PAGE READ


    Original     		PDF M29W640FT M29W640FB TSOP48

    B647C

    Abstract: diode 624 u1g B4K1
    Text: 1 12345678996 ABCBDEFFC66 1 1 1 1F4D42564DC26 ABCF6 A26 1F6 12345678996 FD425D6 EB5FD6 2345674891 8A21 BCA81 DEFE1FFF1 84F4281 2A81 BCA81 FE1D 1!16F1"6E1D # $1 %EE1%F1 FE1& 16'FE1 6E1 ACA21 8C4*+4281


    Original     		PDF ABCBDEFFC66 4D4256 D425D6 BCA81 ACA21 1B2A81 FE-13A2A1 FE-13ACA B647C diode 624 u1g B4K1