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    Untitled

    Abstract: No abstract text available
    Text: RFHA3942D RFHA3942D 35W Linear GaN on SiC Power Amplifier Die The RFHA3942D is a 48V, 35W, GaN on SiC high power discrete amplifier die designed for military communications, electronic warfare, general purpose broadband, commercial wireless infrastructure, and industrial/scientific/medical applications. Using


    Original     		PDF RFHA3942D RFHA3942D DS131024

    CDA 2170

    Abstract: Gan hemt transistor RFMD rfha3942
    Text: RFHA3942D RFHA3942D 35W Linear GaN on SiC Power Amplifier Die 35W Linear GaN on SiC Power Amplifier Die Package: Die RF OUT VD Features     Broadband Operation DC to 4GHz Advanced GaN HEMT Technology Packaged Small Signal Gain = 16.3dB at 2GHz


    Original     		PDF RFHA3942D RFHA3942D -40dBc DS121113 CDA 2170 Gan hemt transistor RFMD rfha3942