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    Alpine Electronics (Asia) Ltd RK27112A0A16

    POT 100K OHM 1/20W LOGARITHMIC
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    DigiKey RK27112A0A16 Bulk 91 1
    • 1 $25.67
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    • 100 $16.5786
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    Avnet Americas RK27112A0A16 Bulk 20 Weeks 500
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    Mouser Electronics RK27112A0A16 32
    • 1 $25.66
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    Avnet Abacus RK27112A0A16 21 Weeks 500
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    Chip1Stop RK27112A0A16 Tray 100
    • 1 $20.5
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    Microchip Technology Inc VCA1-A0A-16M0000000

    VCA1-A0A-16M0000000, Projected EOL: 2044-01-24
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    Microchip Technology Inc VCA1-A0A-16M0000000
    • 1 $12.12
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    • 100 $9.19
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    Alps Alpine Co Ltd RK27112A0A16

    Rotary Potentiometer - 100K Ohm - 20% Tolerance - 1/20W - 1(Elec)/1(Mech)Turn - 6mm (27 X 24.75mm) Pin Panel Mount/Through Hole - Bulk.
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    Master Electronics RK27112A0A16
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    Relay Specialties RK27112A0A16 1
    • 1 $17.75
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    • 100 $11.36
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    A0A16 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    m1 250c fuse

    Abstract: at32uc3c em 234 stepper dtx 370 DTH block diagram lta 301 VT 546 Modem basic circuit diagram EIC 4021 shift registers 4050
    Text: Features • High Performance, Low Power 32-bit AVR Microcontroller – – – – • • • • • • • • • • • • Compact Single-cycle RISC Instruction Set Including DSP Instruction Set Built-in Floating-Point Processing Unit FPU Read-Modify-Write Instructions and Atomic Bit Manipulation


    Original     		PDF 32-bit 9166D-AVR m1 250c fuse at32uc3c em 234 stepper dtx 370 DTH block diagram lta 301 VT 546 Modem basic circuit diagram EIC 4021 shift registers 4050

    Untitled

    Abstract: No abstract text available
    Text: Very Low Power CMOS SRAM 128K X 16 bit BS616LV2016 Pb-Free and Green package materials are compliant to RoHS n FEATURES n DESCRIPTION Ÿ Wide VCC operation voltage : 2.4V ~ 5.5V Ÿ Very low power consumption : VCC = 3.0V Operation current : 30mA Max. at 55ns


    Original     		PDF BS616LV2016 x8/x16 II-44 R0201-BS616LV2016

    AS6C1008

    Abstract: AS6C1008-55
    Text: February 2007 AS6C1008 128K X 8 BIT LOW POWER CMOS SRAM FEATURES GENERAL DESCRIPTION Access time :55ns Low powe r consumption: Operating current:10 mA TYP. Standby current: 1 µA (TYP.) Single 2.7V ~ 5.5V po we r supply Fully Compatible with all Competitors 5V product


    Original     		PDF AS6C1008 32-pin 36-ball AS6C1008 02/February/07, AS6C1008-55

    GCM 38112

    Abstract: Wifi to I2C ST ATUC3A4256S AT32UC3A3 dsp ssb modulation demodulation barcode reader using avr AT32UC3A64 ATUC3A3256 DesignWare Hi-Speed USB On-The-Go Controller AT32UC3A3256S
    Text: Features • High Performance, Low Power 32-bit AVR Microcontroller • • • • • • • • • • • • – Compact Single-Cycle RISC Instruction Set Including DSP Instruction Set – Read-Modify-Write Instructions and Atomic Bit Manipulation


    Original     		PDF 32-bit 51DMIPS/MHz 92DMIPS 66MHz 36MHz 256KBytes, 128KBytes, 64KBytes 32072D04/2011 GCM 38112 Wifi to I2C ST ATUC3A4256S AT32UC3A3 dsp ssb modulation demodulation barcode reader using avr AT32UC3A64 ATUC3A3256 DesignWare Hi-Speed USB On-The-Go Controller AT32UC3A3256S

    tdb 0117

    Abstract: 32-PIN
    Text: SPACE ELECTRONICS INC. 128K X 8-BIT EEPROM SPACE PRODUCTS 28LV010RP VCC 1 RDY/BUSY 32 A15 A14 RES RES A12 WE OE A7 A13 A6 A8 CE A5 A9 WE A11 RES A3 SEi 28LV010RP A2 OE High Voltage Generator VSS A16 A4 16 VCC CE A0 I/O7 I/O0 I/O6 I/O1 I/O5 I/O2 I/O4 VSS I/O3


    Original     		PDF 28LV010RP 99Rev2 tdb 0117 32-PIN

    A63L73321

    Abstract: No abstract text available
    Text: A63L73321 Series 128K X 32 Bit Synchronous High Speed SRAM with Burst Counter and Flow-through Data Output Preliminary Document Title 128K X 32 Bit Synchronous High Speed SRAM with Burst Counter and Flow-through Data Output Revision History Rev. No. History


    Original     		PDF A63L73321 300mA 350mA

    A67L7332

    Abstract: A67L7336 A67L8316 A67L8318
    Text: A67L8316/A67L8318/ A67L7332/A67L7336 Series 256K X 16/18, 128K X 32/36 Preliminary LVTTL, Pipelined DBA SRAM Document Title 256K X 16/18, 128K X 32/36 LVTTL, Pipelined DBA SRAM Revision History Rev. No. 0.0 PRELIMINARY History Issue Date Remark Initial issue


    Original     		PDF A67L8316/A67L8318/ A67L7332/A67L7336 100MHz) A67L7332 A67L7336 A67L8316 A67L8318

    NS41024S55

    Abstract: NS41024S55E-SMD PDM41024W
    Text: MICROCIRCUIT DATA SHEET Original Creation Date: 11/28/95 Last Update Date: 12/20/96 Last Major Revision Date: 11/28/95 MDNS41024S55-X REV 0B0 1 Megabit Static RAM 128K x 8 bit General Description NS41024S55 is a high performance, standard power version CMOS static RAM organized as


    Original     		PDF MDNS41024S55-X NS41024S55 NS41024 NS41024S55 NS41024S55E-SMD PDM41024W 5962-8959834MMA MIL-STD-883, MIL-STD-88341024 NS4A024 NS41024S55E-SMD PDM41024W

    NS41024S25

    Abstract: NS41024S25E-SMD PDM41024W 5962-8959837MMA
    Text: MICROCIRCUIT DATA SHEET Original Creation Date: 11/28/95 Last Update Date: 12/20/96 Last Major Revision Date: 11/28/95 MDNS41024S25-X REV 0B0 1 Megabit Static RAM 128K x 8 bit General Description NS41024S25 is a high performance, standard power version CMOS static RAM organized as


    Original     		PDF MDNS41024S25-X NS41024S25 NS41024 NS41024S25 NS41024S25E-SMD PDM41024W 5962-8959837MMA MIL-STD-883, MIL-STD-88341024 NS4A024 NS41024S25E-SMD PDM41024W 5962-8959837MMA

    NS41024S45

    Abstract: NS41024S45E-SMD PDM41024W
    Text: MICROCIRCUIT DATA SHEET Original Creation Date: 11/28/95 Last Update Date: 12/20/96 Last Major Revision Date: 11/28/95 MDNS41024S45-X REV 0B0 1 Megabit Static RAM 128K x 8 bit General Description NS41024S45 is a high performance, standard power version CMOS static RAM organized as


    Original     		PDF MDNS41024S45-X NS41024S45 NS41024 NS41024S45 NS41024S45E-SMD PDM41024W 5962-8959835MMA MIL-STD-883, MI41024 NS4A024 NS41024S45E-SMD PDM41024W

    tsop32 8x20

    Abstract: M68AF127B PDIP32 SO32 TSOP32 M68AF127
    Text: M68AF127B 1Mbit 128K x8 , 5V Asynchronous SRAM FEATURES SUMMARY • SUPPLY VOLTAGE: 4.5 to 5.5V ■ 128K x 8 bits SRAM with OUTPUT ENABLE ■ EQUAL CYCLE and ACCESS TIMES: 55ns ■ LOW STANDBY CURRENT ■ ■ LOW VCC DATA RETENTION: 2V TRI-STATE COMMON I/O


    Original     		PDF M68AF127B PDIP32 TSOP32 tsop32 8x20 M68AF127B PDIP32 SO32 TSOP32 M68AF127

    44-PIN

    Abstract: M48T129V M48T129Y
    Text: M48T129Y M48T129V 5.0 or 3.3V, 1 Mbit 128 Kbit x 8 TIMEKEEPER SRAM FEATURES SUMMARY • INTEGRATED, ULTRA LOW POWER SRAM, REAL TIME CLOCK, POWER-FAIL CONTROL CIRCUIT, BATTERY, and CRYSTAL ■ YEAR 2000 COMPLIANT ■ BCD CODED CENTURY, YEAR, MONTH, DAY, DATE, HOURS, MINUTES, and


    Original     		PDF M48T129Y M48T129V 32-pin M48T129Y: M48T129V: 44-PIN M48T129V M48T129Y

    DFSDM

    Abstract: SAM9M10 K 2141 AC97 ARM926EJ-S AT91SAM ISO7816 NBC 3111 hc 541 rfid reader id-20
    Text: Features • 400 MHz ARM926EJ-S ARM Thumb® Processor – 32 KBytes Data Cache, 32 KBytes Instruction Cache, MMU • Memories • • • • – DDR2 Controller 4-bank DDR2/LPDDR, SDR/LPSDR – External Bus Interface supporting 4-bank DDR2/LPDDR, SDR/LPSDR, Static


    Original     		PDF ARM926EJ-STM 64-KByte 6355C 19-Apr-11 DFSDM SAM9M10 K 2141 AC97 ARM926EJ-S AT91SAM ISO7816 NBC 3111 hc 541 rfid reader id-20

    cd018

    Abstract: No abstract text available
    Text: TMS28F033 4194304-BIT SYNCHRONOUS FLASH MEMORY _ SM JS633 - NOVEMBER 1997 PAF 80-PIN PACKAGE TOP VIEW 8 X to. > i> 5 ¡r lo o Ear IS IS IS |w lo I * 0017 C D018 C DQ19 C VDDE C VSSE C OQ20 C 0Q21 C 0Q22 C DQ23 C DQ24 C DQ25 C


    OCR Scan     		PDF JS633 TMS28F033 4194304-BIT 80-PIN 16/32-bit cd018

    5C100B-25

    Abstract: 5C1008-25 20D14 5C100B
    Text: SMJ5C1008 128K BY 8-BIT STATIC RANDOM-ACCESS MEMORY _ SQMS734A - MAY 1996 - REVISED JUNE 1997 Processed to MIL-PRF-38535 Organization . . . 128K Words x 8 Bits Fast Static Operation Single 5-V Supply ±10% Tolerance Maximum Access Time From Address or


    OCR Scan     		PDF SMJ5C1008 SQMS734A MIL-PRF-38535 5C1008-20 5C1008-25 32-Pin 5C100B-25 20D14 5C100B

    TC518129AFwl

    Abstract: No abstract text available
    Text: TOSHIBA TC518129APL/AFL/AFWL-80LV/lOLV/12LV TC518129AFTL80LV/lOLV/12LV SILICON GATE CM O S 131,072 W ORD x 8 BIT C M O S PSEUDO STATIC RAM D escription The TC5181 29A-LV is a 1M bit high speed CMOS pseudo static RAM organized as 131,072 words by 8 bits. The TC518129A-LV


    OCR Scan     		PDF TC518129APL/AFL/AFWL-80LV/lOLV/12LV TC518129AFTL80LV/lOLV/12LV TC5181 TC518129A-LV D-112 TC518129APL/AFL/AFWL/AFTL-80LV/1OLV/12LV D-113 TC518129APL/AFL/AFWL/AFTL-80LV/1 TC518129AFwl

    transistor D128

    Abstract: TC518129 D128 transistor transistor d133 ksh 200 TRANSISTOR equivalent TRANSISTOR 80l
    Text: TOSHIBA TC518129BPL/BSPL/BFL/BFWL/BFIL-70/80/10 TC518129BPL/BSPL/BFL/BFWL/BFIL-70L/80L/10L SILICON GATE CMOS 131,072 WORD x 8 BIT CMOS PSEUDO STATIC RAM Description The TC518129B is a 1M bit high speed CMOS pseudo static RAM organized as 131,072 words by 8 bits. TheTC518129B utilizes


    OCR Scan     		PDF TC518129BPL/BSPL/BFL/BFWL/BFIL-70/80/10 C518129BPL/BSPL/BFL/BFWL/BFIL-70L/80L/10L TC518129B TheTC518129B D-132 TC518129BPL/BSPL/BFL/BFWL/BFTL-70/80/10 C518129BPL/BSPL/BFL/BFWL/BFTL-70L/80L/1OL D-133 transistor D128 TC518129 D128 transistor transistor d133 ksh 200 TRANSISTOR equivalent TRANSISTOR 80l

    TMP96C141F

    Abstract: tmp96c141
    Text: TOSHIBA UNDER DEVELOPMENT TMP90PM38 4.15 Program Operation Timing Chart PROM mode High Speed Program Formula * A0-A16 CE OE D0~D 7 UU U/ m ' y \ \ \ i\ _;_;_ m y UNENOWN ~ - \ _ ( / \ ~\ tNPUTDATA CONFIRMATION m m / S _ / OUTPUT DATA \


    OCR Scan     		PDF TMP90PM38 A0-A16 TMP96C141 TMP96C141/TMP96CM40/TMP96PM40 TMP96C141, TMP96CM40 TMP96PM40 TMP96C141 P96CM 32Kbyte TMP96C141F

    TAA 310A

    Abstract: KM681000BLP-7L 128k x8 SRAM TSOP km681000blp-7 KM681000B KM681000BL KM681000BLE KM681000BL-L
    Text: KM681000B Family CMOS SRAM 128Kx8 bit High Speed CMOS Static RAM FEATURE SUMMARY GENERAL DESCRIPTION • Process Technology: 0.6 um CMOS • Organization : 128K x 8 • Power Supply Voltage : Single 5V +/-10% • Low Data Retention Voltage : 2V Min • Three state output and TTL Compatible


    OCR Scan     		PDF KM681000B 128Kx8 0023b3? KM681OOOÃ 0D23b3Ã TAA 310A KM681000BLP-7L 128k x8 SRAM TSOP km681000blp-7 KM681000BL KM681000BLE KM681000BL-L

    KM68U1000B

    Abstract: KM68V1000B
    Text: CMOS SRAM KM68V1000B, KM68U1000B Family 128Kx8 bit Low Power & Low Vcc CMOS Static RAM GENERAL DESCRIPTION FEATURE SUMMARY • Process Technology: 0.6 um CMOS • Organization : 128Kx8 • Power Supply Voltage KM68V1000B fa m ily : 3.3V +/- 0.3V KM68U1000B family : 3.0V +/- 0.3V


    OCR Scan     		PDF KM68V1000B, KM68U1000B 128Kx8 128Kx8 KM68V1000B 32-SOP, 32-TSOP

    Untitled

    Abstract: No abstract text available
    Text: PRE LIM INARY Advanced Micro Devices Am27LV010/Am27LV01 OB 1 Megabit 131,072 x 8-Bit CMOS EPROM DISTINCTIVE CHARACTERISTICS • Single +3.3 V power supply — Regulated power supply 3.0 V-3.6 V — Unregulated power supply 2.7 V-3.6 V (for battery operated systems)


    OCR Scan     		PDF Am27LV010/Am27LV01 28-pin 32-pin 7341A-11 Am27LV010/Am27LV010B

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY AMDH Am29LV001 B 1 Megabit 128 K x 8-Bit CMOS 3.0 Volt-only Boot Sector Flash Memory DISTINCTIVE CHARACTERISTICS • Single power supply operation ■ Unlock Bypass Mode Program Command — Full voltage range: 2.7 to 3.6 volt read and write operations for battery-powered applications


    OCR Scan     		PDF Am29LV001 Am29LV001B

    AM29F01OA-45

    Abstract: No abstract text available
    Text: AMDZ1 Am29F010A 1 Megabit 128 K x 8-bit CMOS 5.0 Volt-only, Uniform Sector Flash Memory DISTINCTIVE CHARACTERISTICS • Single power supply operation ■ — 5.0 V ± 10% for read, erase, and program operations Embedded Algorithms — Embedded Erase algorithm automatically


    OCR Scan     		PDF Am29F010A Am29F010 20-year Am29F01 AM29F01OA-45

    Untitled

    Abstract: No abstract text available
    Text: ' Pt: LiP,MI i AR AMD* Am29F200A 2 Megabit 256 K x 8-Bit/128 K x 16-Bit CMOS 5.0 Volt-only, Boot Sector Flash Memory DISTINCTIVE CHARACTERISTICS • 5.0 V ± 10% for read and write operations — Minimizes system level power requirements ■ High performance


    OCR Scan     		PDF Am29F200A 8-Bit/128 16-Bit)