AM29F01 Search Results

AM29F016D-120

Abstract: AM29F016D-150 AM29F016D-70 AM29F016D-90 SA10 SA11 SA12 SA13
Contextual Info: Am29F016D 16 Megabit 2 M x 8-Bit CMOS 5.0 Volt-only, Uniform Sector Flash Memory DISTINCTIVE CHARACTERISTICS • 5.0 V ± 10%, single power supply operation — Minimizes system level power requirements ■ Manufactured on 0.23 µm process technology — Compatible with 0.5 µm Am29F016 and 0.32 µm

98108A

Abstract: amd 8550 AM29F010 known good CS19AFDS AM29F010
Contextual Info: “ SUPPLEMENT “ ““ AMD* Am29F010A Known Good Die 1 Megabit 128 K x 8-Bit CMOS 5.0 Volt-only, Uniform Sector Flash M em ory— Die Revision 1 DISTINCTIVE CHARACTERISTICS • ■ Single power supply operation — 5.0 V + 10% for read, erase, and program

AM29F01OA-45

Contextual Info: AMDZ1 Am29F010A 1 Megabit 128 K x 8-bit CMOS 5.0 Volt-only, Uniform Sector Flash Memory DISTINCTIVE CHARACTERISTICS • Single power supply operation ■ — 5.0 V ± 10% for read, erase, and program operations Embedded Algorithms — Embedded Erase algorithm automatically

9018

Abstract: AM29F016 EDI7F332MC
Contextual Info: EDI7F332MC 2Megx32 2Megx32 Flash Module The EDI7F332MC and EDI7F2332MC are organized as one and two banks of 2 meg x 32 respectively. The modules are based on AMDs AM29F016 - 2Meg x 8 Flash device in TSOP packages which are mounted on an FR4 substrate. Both modules offer access times between 90 and

AMD ORDERING AM29F010B PACKAGE

Abstract: AMD AM29F010B PACKAGE known good die AMD AM29F010B-120 AM29F010B-90 AMD ORDERING AM29F010B AMD Package type am29f010b AM29F010 known good AM29F010 die
Contextual Info: Am29F010B Known Good Die Data Sheet -XO\  7KH IROORZLQJ GRFXPHQW VSHFLILHV 6SDQVLRQ PHPRU\ SURGXFWV WKDW DUH QRZ RIIHUHG E\ ERWK $GYDQFHG 0LFUR 'HYLFHV DQG XMLWVX $OWKRXJK WKH GRFXPHQW LV PDUNHG ZLWK WKH QDPH RI WKH FRPSDQ\ WKDW RULJ LQDOO\ GHYHORSHG WKH VSHFLILFDWLRQ WKHVH SURGXFWV ZLOO EH RIIHUHG WR FXVWRPHUV RI ERWK $0' DQG

Contextual Info: Am29F017B 16 Megabit 2 M x 8-Bit CMOS 5.0 Volt-only, Uniform Sector Flash Memory DISTINCTIVE CHARACTERISTICS • Optimized for memory card applications — Backwards-compatible with the Am29F016C ■ 5.0 V ± 10%, single power supply operation — Minimizes system level power requirements

known good die AMD

Abstract: ACN2016 AMD 21551
Contextual Info: SUPPLEMENT Am29F016B Known Good Die 16 Megabit 2 M x 8-Bit CMOS 5.0 Volt-only, Sector Erase Flash Memory—Die Revision 2 DISTINCTIVE CHARACTERISTICS • 5.0 V ± 10%, single power supply operation — Minimizes system level power requirements ■ Manufactured on 0.32 µm process technology

Contextual Info: PR ELIM IN ARY AM D il Am29F017B 16 Megabit 2 M x 8-Bit CMOS 5.0 Volt-only, Uniform Sector Flash Memory DISTINCTIVE CHARACTERISTICS • Optim ized for m em ory card applications ■ — Backwards-com patible with the Am 29F016C ■ 5.0 V ± 10%, single power supply operation

AM29F017D-120

Abstract: AM29F017D-150 AM29F017D-70 AM29F017D-90 SA10 SA11 SA12 SA13
Contextual Info: Am29F017D Data Sheet July 2003 The following document specifies Spansion memory products that are now offered by both Advanced Micro Devices and Fujitsu. Although the document is marked with the name of the company that originally developed the specification, these products will be offered to customers of both AMD and

SA10

Abstract: SA11 SA12 SA13 SA14 SA15
Contextual Info: PRELIMINARY Am29F017B 16 Megabit 2 M x 8-Bit CMOS 5.0 Volt-only, Uniform Sector Flash Memory DISTINCTIVE CHARACTERISTICS • Optimized for memory card applications — Backwards-compatible with the Am29F016C ■ 5.0 V ± 10%, single power supply operation

AM29F017D-120

Abstract: AM29F017D-150 AM29F017D-70 AM29F017D-90 SA10 SA11 SA12 SA13
Contextual Info: Am29F017D 16 Megabit 2 M x 8-Bit CMOS 5.0 Volt-only, Uniform Sector Flash Memory DISTINCTIVE CHARACTERISTICS • Optimized for memory card applications — Backwards-compatible with Am29F016C and Am29F017B ■ 5.0 V ± 10%, single power supply operation

AM29F010

Abstract: AM29F01055 Am2F010
Contextual Info: FINAL Am29F010 1 Megabit 128 K x 8-bit CMOS 5.0 Volt-only, Uniform Sector Flash Memory DISTINCTIVE CHARACTERISTICS • Single power supply operation — 5.0 V ± 10% for read, erase, and program operations — Simplifies system-level power requirements ■ High performance

AM29F016D-120

Abstract: AM29F016D-70 AM29F016D-90 SA10 SA11 SA12 SA13 SA14 SA15
Contextual Info: Am29F016D Data Sheet The Am29F016D is not offered for new designs. Please contact your Spansion representative for alternates. The following document contains information on Spansion memory products. Continuity of Specifications There is no change to this data sheet as a result of offering the device as a Spansion product. Any

am29f010

Abstract: am29f010-90 98108A AM29F010 known good AM29F010 die CS19AFDS
Contextual Info: S U PP LEM EN T Am29F010 Known Good Die AMD3 1 Megabit 128 K x 8-Bit CMOS 5.0 Volt-only, Uniform Sector Flash Memory— Die Revision 1 DISTINCTIVE CHARACTERISTICS • S ingle p ow er sup ply operation Embedded Algorithms — 5.0 V ± 10% for read, erase, and program

AM29F016D-120

Contextual Info: Am29F016D Known Good Die 16 Megabit 2 M x 8-Bit CMOS 5.0 Volt-only, Sector Erase Flash Memory—Die Revision 1 Supplement Am29F016D Known Good Die Cover Sheet The following document contains information on Spansion memory products. Continuity of Specifications

Contextual Info: AMD£I Am29F016B 16 Megabit 2 M x 8-Bit CMOS 5.0 Volt-only, Uniform Sector Flash Memory DISTINCTIVE CHARACTERISTICS • 5.0 V ± 10%, single power supply operation ■ Minimum 1,000,000 program /erase cycles per sector guaranteed ■ 20-year data retention at 125°C

Contextual Info: FINAL AMDZ1 Am29F010 1 Megabit 128 K x 8-bit CMOS 5.0 Volt-only, Uniform Sector Flash Memory DISTINCTIVE CHARACTERISTICS • Single power supply operation — 5.0 V ± 10% for read, erase, and program operations — Simplifies system-level power requirements

Contextual Info: FINAL AMDZ1 Am29F010 1 Megabit 128 K x 8-bit CMOS 5.0 Volt-only, Uniform Sector Flash Memory DISTINCTIVE CHARACTERISTICS • Single power supply operation — 5.0 V ± 10% for read, erase, and program operations — Simplifies system-level power requirements

am29f010

Contextual Info: a Am29F010 Advanced Micro Devices 1 Megabit 131,072 x 8-Bit CMOS 5.0 Volt-only, Sector Erase Flash Memory DISTINCTIVE CHARACTERISTICS • 5.0 V ± 10% read, write, and erase — Minimizes system level power consumption ■ Compatible with JEDEC-standard commands

Contextual Info: AMD£I Am29F017B 16 Megabit 2 M x 8-Bit CMOS 5.0 Volt-only, Uniform Sector Flash Memory DISTINCTIVE CHARACTERISTICS • Optimized for memory card applications ■ — Backwards-compatible with the Am29F016C ■ 5.0 V ± 10%, single power supply operation

Contextual Info: Am29F010B Data Sheet July 2003 The following document specifies Spansion memory products that are now offered by both Advanced Micro Devices and Fujitsu. Although the document is marked with the name of the company that originally developed the specification, these products will be offered to customers of both AMD and

Contextual Info: Am29F017D Data Sheet RETIRED PRODUCT This product has been retired and is not recommended for designs. Please contact your Spansion representative for alternates. Availability of this document is retained for reference and historical purposes only. The following document contains information on Spansion memory products.

AM29F010A

Abstract: AM29F010A-45 AM29F010A-55 AM29F010A-70 AM29F010A-90 TS032 Am29F010 Rev. A
Contextual Info: Am29F010A 1 Megabit 128 K x 8-bit CMOS 5.0 Volt-only, Uniform Sector Flash Memory DISTINCTIVE CHARACTERISTICS • Single power supply operation — 5.0 V ± 10% for read, erase, and program operations — Simplifies system-level power requirements ■ Manufactured on 0.55 µm process technology

Contextual Info: Am29F016B 16 Megabit 2 M x 8-Bit CMOS 5.0 Volt-only, Uniform Sector Flash Memory DISTINCTIVE CHARACTERISTICS • 5.0 V ± 10%, single power supply operation — Minimizes system level power requirements ■ Manufactured on 0.32 µm process technology — Compatible with 0.5 µm Am29F016 device