ternary content addressable memory
Abstract: Ternary CAM SCT9022 SCT4502 Sibercore Technologies Sibercore Sibercore Technologies SCT9022 Content Addressable Memory "Content Addressable Memory"
Text: The SCT4502 Packet Forwarding Engine PFE offers the optimal price performance trade off for today's system requirements. Based on ternary Content Addressable Memory (CAM) technology, the SCT4502 is fully compatible with other, higher capacity members of the SiberCAM family (SCT9022 and SCT1842).
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SCT4502
SCT9022
SCT1842)
576-bits
10Mb/100Mb/1Gb/10Gb
SCT-001-4502
ternary content addressable memory
Ternary CAM
Sibercore Technologies
Sibercore
Sibercore Technologies SCT9022
Content Addressable Memory
"Content Addressable Memory"
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renesas tcam
Abstract: tcam renesas idt tcam Ayama 20000 cypress tcam Sahasra 50000 NSE sahasra Sahasra 50000 tcam tcam cypress
Text: CYNSE20512 CYNSE20256 PRELIMINARY Ayama 20000 Network Search Engine Family Data Sheet Features — QDR-II up to 250 MHz, Burst-of-2 and Burst-of-4 — Convenient “Clamshellable” pinout for ease of board design • Fast search rates — Up to 266 million searches per second MSPS in
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CYNSE20512
CYNSE20256
72/144-bit
32/288-bit
576-bit
32-bit
166/200LVCMOS/200HSTL
renesas tcam
tcam renesas
idt tcam
Ayama 20000
cypress tcam
Sahasra 50000 NSE
sahasra
Sahasra 50000
tcam
tcam cypress
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intel 8203
Abstract: RTL 8188 82580 82575 0x1528 electromagnetic pulse kit INTEL 845 MOTHERBOARD CIRCUIT diagram foxconn ls 36 motherboard manual 8237 direct memory access controller 81217
Text: Intel 82580 Quad/Dual Gigabit Ethernet LAN Controller Datasheet LAN Access Division LAD FEATURES External Interfaces Provided: • Virtualization Ready: PCIe v2.0 (5Gbps and 2.5Gbps) x4/x2/x1; called PCIe in this document. • Enhanced VMDq1 support: •
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1000BASE-T,
100BASE-TX,
10BASE-T
1000Base-SX/
1000BASE-KX
1000BASE-BX
0x0034;
321027-015EN
intel 8203
RTL 8188
82580
82575
0x1528
electromagnetic pulse kit
INTEL 845 MOTHERBOARD CIRCUIT diagram
foxconn ls 36 motherboard manual
8237 direct memory access controller
81217
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75K62100
Abstract: 75P42100 75P52100 AN-279 IDT75P42100
Text: Datasheet Brief 75P42100 NETWORK SEARCH ENGINE 32K x 72 Entries To request the full IDT75P42100 datasheet, please contact your local IDT Sales Representative or call 1-800-345-7015 Block Diagram Device Description IDT provides proven, industry-leading network search engines
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75P42100
IDT75P42100
75P42100
75K62100
75P52100
AN-279
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PEC 4179 DIODE
Abstract: 327879-001US
Text: Intel Communications Chipset 89xx Series Datasheet October 2012 Order Number: 327879-001US INFORMATION IN THIS DOCUMENT IS PROVIDED IN CONNECTION WITH INTEL® PRODUCTS. NO LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE, TO ANY INTELLECTUAL PROPERTY RIGHTS IS GRANTED BY THIS DOCUMENT. EXCEPT AS PROVIDED IN INTEL'S TERMS AND CONDITIONS
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327879-001US
LK100
PEC 4179 DIODE
327879-001US
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1117 1.8v
Abstract: TAG J3 136D diode 10-16 BLD 135D intel 945 motherboard schematic diagram transistor mps 9632 intel 82576 SFP 1-by-2 sdp31 ENCODER "Development Kit"
Text: Intel Ethernet Controller I350 Datasheet LAN Access Division LAD Features External Interfaces provided: Power saving features: PCIe v2.1 (2.5GT/s and 5GT/s) x4/x2/x1; called PCIe in this document. MDI (Copper) standard IEEE 802.3 Ethernet interface for
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1000BASE-T,
100BASE-TX,
10BASE-T
1000BASE-SX/
IEEE802
1000BASE-KX
1000BASE-BX
INF-8074i
1117 1.8v
TAG J3 136D
diode 10-16
BLD 135D
intel 945 motherboard schematic diagram
transistor mps 9632
intel 82576
SFP 1-by-2
sdp31
ENCODER "Development Kit"
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27C280
Abstract: 27C220 27C240 C1995 J40AQ NM27P210 capacitor 10 MF 25v
Text: NM27P210 1 048 576-Bit 64K x 16 Processor Oriented CMOS EPROM General Description Features The NM27P210 is a 1024K Processor Oriented EPROM (POPTM ) configured as 64K x 16 It’s designed to simplify microprocessor interfacing while remaining compatible with
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NM27P210
576-Bit
NM27P210
1024K
27C280
27C220
27C240
C1995
J40AQ
capacitor 10 MF 25v
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27C010A
Abstract: 27c010a-10 27C010* texas 32-Lead 2. 27C010A - 12 TMS27C010A TMS27PC010A 27c010a-15 dallas 1265 32pin cmos TI 072
Text: TMS27C010A 131 072 BY 8ĆBIT UV ERASABLE TMS27PC010A 131 072 BY 8ĆBIT PROGRAMMABLE READĆONLY MEMORIES SMLS110C − NOVEMBER 1990 − REVISED SEPTEMBER 1997 D Organization . . . 131 072 by 8 Bits D Single 5-V Power Supply D Operationally Compatible With Existing
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TMS27C010A
TMS27PC010A
SMLS110C
32-Pin
32-Lead
27C/PC010A-10
PC010A-12
PC010A-15
PC010A-20
27C010A
27c010a-10
27C010* texas
2. 27C010A - 12
27c010a-15
dallas 1265 32pin cmos
TI 072
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FG388A
Abstract: BMR 611
Text: CYNSE10512 CYNSE10256 CYNSE10128 CONFIDENTIAL PRELIMINARY Ayama 10000 Network Search Engine Cypress Semiconductor Corporation Document #: 38-02069 Rev. *F • 3901 North First Street • San Jose, CA 95134 • 408-943-2600 Revised July 13, 2004 [+] Feedback
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CYNSE10512
CYNSE10256
CYNSE10128
FG388A
BMR 611
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74als2238
Abstract: No abstract text available
Text: SN74ALS2238 32 x 9 x 2 ASYNCHRONOUS BIDIRECTIONAL FIRST-IN FIRST-OUT MEMORY D3501, A P R IL 1990 N PACKAQE TOP VIEW Independent Asychronous Input« and Outputs Bidirectional RSTK 32 Word« by 9 BK. Each * Data Rate« from 0 to 40 MHz * F a ll-T h ro u g h T im e . . . 2 2 n « iy p
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SN74ALS2238
D3501,
576-bit
74als2238
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27LV010A
Abstract: No abstract text available
Text: TMS27LV010A1 048 576-BIT UV ERASABLE LOW VOLTAGE PROGRAMMABLE ROM TMS27LV010A1 048 576-BIT LOW VOLTAGE ONE-TIME PROGRAMMABLE ROM SMLS113-DECEMBER 1992 x 8 J AND N PACKAGESt TOP VIEW Single 3.3-V Power Supply Operationally Compatible With Existing 1-Megabit EPROMs
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TMS27LV010A1
576-BIT
SMLS113-DECEMBER
32-Pin
32-Lead
27LV010A-20
27LV010A-25
27LV010A
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Untitled
Abstract: No abstract text available
Text: SMJ27C210 1 048576-BIT UV ERASABLE PROGRAMMABLE READ-ONLY MEMORY SM G S028A — MARCH 19B8 — REVISED N O VEM BER 1990 J Package Top View Single 5-V Power Supply Operationally Compatible With Existing Megabit EPROMs 40-Pln Dual-In-line Package All Inputs and Outputs Fully TTL
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SMJ27C210
048576-BIT
S028A
40-Pln
SMJ27C210-12
SMJ27C210-15
SMJ27C210-17
SMJ27C210-20
SMJ27C210-25
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TMS44C256
Abstract: TMS44C256-10 TMS44C256-80 44C256
Text: TMS44C256 262 144-WORD BY 4-BIT DYNAMIC RANDOM-ACCESS MEMORY ‘jM G S l'M C D Q1 I u 1 DQ4 W ; 3 18 ' D Q 3 V SS DQ2 I 7 RAS ! 9 R E AD 13 j A 6 12 j A5 TIM E T IM E TIM E OR ta R ta (C ) 'a (C A ) W R IT E A3 [ 9 (tC A A ) CYCLE (M A X ) (M A X ) (M IN)
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TMS44C256
144-WORD
TMS44C256s
TMS44C256N
TMS44C256-10
TMS44C256-80
44C256
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suss Instruments
Abstract: D3501 SN74ALS2238 gba 2674
Text: SN74ALS2238 32 x 9 x 2 ASYNCHRONOUS BIDIRECTIONAL FIRST-IN FIRST-OUT MEMORY D3501, APRIL 1990 N PACKAGE TOP VIEW Independent Asychronous Inputs and Outputs Bidirectional 30 R lT B DBF BO B1 B2 GND B3 B4 B5 B6 GND VCC 12 29 Vc c A7 A8 LDCKA FULLA UNCKB EMPTYB
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SN74ALS2238
D3501,
576-bit
ALS2238
suss Instruments
D3501
SN74ALS2238
gba 2674
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Untitled
Abstract: No abstract text available
Text: MBM93419 FUJITSU M IC R O E L E C T R O N IC S . INC. TTL 576-BIT BIPOLAR RANDOM ACCESS MEMORY DESCRIPTION The Fujitsu MBM93419 is a high speed TTL read/write randomaccess memory, organized as 64 words by 9 bits, with opencollector outputs. M BM93419 is packaged in a
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MBM93419
576-BIT
MBM93419
BM93419
28-pin
F93419.
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Untitled
Abstract: No abstract text available
Text: TOSHIBA TC551001 BPL/BFL/BFTL/BTRL/BSTL/BSRL-70,-85,-10 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 131,072-WORD BY 8-BIT STATIC RAM DESCRIPTION The TC551001BPL/BFL/BFTL/BTRL/BSTL/BSRL is a 1,048 576-bit static random access memory SRAM organized as 131,072 words by 8 bits. Fabricated using Toshiba’s CMOS Silicon gate process technology, this
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TC551001
BPL/BFL/BFTL/BTRL/BSTL/BSRL-70
072-WORD
TC551001BPL/BFL/BFTL/BTRL/BSTL/BSRL
576-bit
32-P-0820-0
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TC551001
Abstract: No abstract text available
Text: TOSHIBA TC551001 BPI/BFI/BFTI/BTRI/BSTI/BSRI-85L,-10L TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 131,072-WORD BY 8-BIT STATIC RAM DESCRIPTION The TC551001BPI/BFI/BFTI/BTRI/BSTI/BSRI is a 1,048 576-bit static random access memory SRAM organized as 131,072 words by 8 bits. Fabricated using Toshiba’s CMOS Silicon gate process technology, this
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TC551001
BPI/BFI/BFTI/BTRI/BSTI/BSRI-85L
072-WORD
TC551001BPI/BFI/BFTI/BTRI/BSTI/BSRI
576-bit
32-P-0820-0
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MP 1048 EM
Abstract: 28f210
Text: TMS28F210 1 048576-BIT FLASH MEMORY SMJS21 OC-D E C EM BE R 1 9 9 2 - REVISED MAY 1996 FN PACKAGE TOP VIE W O r g an iz a t io n . . . 64K x 1 6 Flash M e m o r y Pi n C o m p a t i b l e Wi t h E x i s t i n g 1 - M e g a b i t EPROMs All I n p u t s / O u t p u t s T T L C o m p a t i b l e
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TMS28F210
048576-BIT
SMJS21
MP 1048 EM
28f210
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panasonic timer switch tb 179
Abstract: panasonic SH-D
Text: P a n a X S e r ie s B ‘ r i n g i n g ‘T o m o r r o w MICROCOMPUTER MN102L35G LSI User Manual Ver. 2.20 March 6, 1998 Panasonic • 0Q167flS 273 ■ t o ‘T o d a y Restrictions and Warnings Regarding the Use of the Technical Data and the Semiconductors Described in This Document
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MN102L35G
0Q167flS
panasonic timer switch tb 179
panasonic SH-D
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Untitled
Abstract: No abstract text available
Text: 1M x molate 1 DRAM MDM11000-80/10/12/15 Issue 3.1 : October 1991 M osaic S em iconductor Inc. Pin Definitions Package Type: T,V 1,048,576 x 1 CMOS High Speed Dynamic RAM Features Sit WE RAS Row Access Times of 80,100/120/150 ns 5 Voft Supply ± 10% 512 Refresh Cycles 8 ms
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MDM11000-80/10/12/15
MIL-STD-883C
MIL-883
cA92i
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Untitled
Abstract: No abstract text available
Text: A S ch lu m b e rg e r C o m p a n y 93419 64 x 9-Bit Static Random Access Memory B ipolar Division T T L B ipolar M em ory Description The 93419 is a 576-bit read/w rite Random Access M em ory RAM , organized 64 w ords by nine bits per word with open c o lle cto r outputs. It is ideally suited for
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28-Pin
576-bit
9341m
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Untitled
Abstract: No abstract text available
Text: Advance information A S 7C 31026LL 3 .3 V 6 4 K x 1 6 Inte I¡watt'” low power C M O S SRAM Features •O p tm ized design fo r battery operated portable s/stan s •E a s/ m en o iy ejqpansbn w ifh CE, O E inputs • ivtelliw ait?“ active pow e r reduction circuitry
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31026LL
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27C010A
Abstract: 27c010a10 SMLS110A-NOVEMBER 27c010a-10
Text: TMS27C010A1 048 576-BIT UV ERASABLE PROGRAMMABLE READ-ONLY MEMORY TMS27PC010A1 048 576-BIT PROGRAMMABLE READ-ONLY MEMORY SM LS110A-N OVEM BER1990-REVISED DECEM BER 1992 Organization. 128K x 8 J A ND N PA CK AG ESt TO P V IEW Single 5-V Power Supply Operationally Compatible With Existing
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TMS27C010A
1048576-BIT
TMS27PC010A1
576-BIT
LS110A-N
BER1990-REVISED
32-Pin
32-Lead
27C010A-10
27C010A
27c010a10
SMLS110A-NOVEMBER
27c010a-10
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cq714
Abstract: No abstract text available
Text: ADVANCE INFORMATION TMS47C1024 131,072-WORD BY 8-BIT READ-ONLY MEMORY NOVEMBER 1 9 8 5 N PACKAGE 1 3 1 ,0 7 2 X 8 Organization TOP VIEW Fully Static (No Clocks, No Refresh) «' 1 VJ28 D v Cc 27 J A 14 2 3 26 3 A13 4 25 3 A8 24 3 A 9 5 23 n a h 6 7 22 3 A 1 6
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TMS47C1024
072-WORD
576-bit
cq714
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