NEC 2SC959
Abstract: BFR39 2SC309 100n AST44 LOW-POWER SILICON NPN 2SC1008A 2SC2274K 2SC3329-BL 2SC959
Text: LOW-POWER SILICON NPN Item Number Part Number S 10 15 20 25 30 MPS-A06 PMBTAS6 PMBTAS6 FMMT-A06 FMMTA06 MMBTA06 MMBTA06 MMBTA06 MPSA06 PMBTA06 PMBTA06 5MBTA06 BCS3B BFT29 TP58S8 2N585B BFR39 BFR39 BFR39 2S0666 2N4410 BSX21 AST4410 BC447A BC447A BC4BS BC48S-18
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MPS-A06
FMMT-A06
FMMTA06
MMBTA06
MPSA06
PMBTA06
5MBTA06
NEC 2SC959
BFR39
2SC309
100n
AST44
LOW-POWER SILICON NPN
2SC1008A
2SC2274K
2SC3329-BL
2SC959
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marking A06
Abstract: marking A06 amplifier KTMC1060SC MMBT3904T MMBT3906T transistor j25
Text: MMBT3906T PNP Epitaxial Silicon Transistor Features C • General purpose amplifier transistor. E • Ultra-Small Surface Mount Package for all types. B • Suitable for general switching & amplification Marking : A06 • Well suited for portable application
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MMBT3906T
OT-523F
MMBT3904T
MMBT3906T
marking A06
marking A06 amplifier
KTMC1060SC
transistor j25
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Untitled
Abstract: No abstract text available
Text: MMBT3906T PNP Epitaxial Silicon Transistor Features C • General purpose amplifier transistor. • Ultra-Small Surface Mount Package for all types. • Suitable for general switching & amplification • Well suited for portable application E B Marking : A06
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MMBT3906T
OT-523F
MMBT3904T
MMBT3906T
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Untitled
Abstract: No abstract text available
Text: MPS-A06 Transistors Si NPN Lo-Pwr BJT Military/High-RelN V BR CEO (V)80 V(BR)CBO (V)80 I(C) Max. (A)500m Absolute Max. Power Diss. (W)625m Maximum Operating Temp (øC)150õ I(CBO) Max. (A)100n @V(CBO) (V) (Test Condition)80 V(CE)sat Max. (V).25 @I(C) (A) (Test Condition)100m
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MPS-A06
Freq100M
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a06 transistor
Abstract: Code "A06" RF Semiconductor transistor A06 f 1405 zs BFP450 A06 NPN Siemens 1713 Q62702-F1590 marking A06 SIEMENS BFP450
Text: SIEGET 25 BFP450 NPN Silicon RF Transistor l For Medium Power Amplifiers l Compression Point P = +19 dBm at 1.8 GHz -1dB l l l Maximum Available Gain Gma = 14 dB at 1.8 GHz Noise Figure F = 1.25 dB at 1.8 GHz Transition Frequency fT = 24 GHz Gold metalization for high reliability
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BFP450
25-Line
Transistor25
OT343
Q62702-F1590
a06 transistor
Code "A06" RF Semiconductor
transistor A06
f 1405 zs
BFP450
A06 NPN
Siemens 1713
Q62702-F1590
marking A06
SIEMENS BFP450
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a06 transistor
Abstract: TRANSISTOR A06 Code "A06" RF Semiconductor marking AAAA marking A06 BF 184 transistor BFP405 a06 transistor 165 chip diode 047 SIEMENS BFP405
Text: SIEGET 25 BFP405 NPN Silicon RF Transistor Low Current Applications l For Oscillators up to 12 GHz l For Noise Figure F = 1.15 dB at 1.8 GHz l Outstanding G = 22 dB at 1.8 GHz Transition Frequency f = 25 GHz l Gold metalization for high reliability l SIEGET 25-Line
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BFP405
1512dB
25-Line
OT343
Q62702-F-1592
a06 transistor
TRANSISTOR A06
Code "A06" RF Semiconductor
marking AAAA
marking A06
BF 184 transistor
BFP405
a06 transistor 165
chip diode 047
SIEMENS BFP405
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A05 SOT
Abstract: A06 NPN a06 transistor marking A06 A05 sot-23 a06 to92 k 036 A06 diode D 92 M 03 DIODE MMBTA05
Text: MPSA05/06 / MMBTA05/06 NPN SMALL SIGNAL TRANSISTORS POWER SEMICONDUCTOR Features • • • MMBTA05 / MMBTA06 Epitaxial Planar Die Construction High Transition Frequency Recommended for Driver and Low-Power Output Stages A C TOP VIEW B C B E G E D H K Mechanical Data
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MPSA05/06
MMBTA05/06
MMBTA05
MMBTA06
O-92/SOT-23,
MIL-STD-202,
OT-23
MMBTA06
OT-23
A05 SOT
A06 NPN
a06 transistor
marking A06
A05 sot-23
a06 to92
k 036
A06 diode
D 92 M 03 DIODE
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AMS 3630
Abstract: a06 transistor Q62702-F1591 ff 0401 transistor A06 marking A06 BFP420 A06 Code "A06" RF Semiconductor BFP420 application notes BFP420
Text: SIEGET 25 BFP420 NPN Silicon RF Transistor l For High Gain Low Noise Amplifiers l For Oscillators up to 10 GHz l Noise Figure F = 1.05 dB at 1.8 GHz Outstanding G = 20 dB at 1.8 GHz l Transition Frequency f = 25 GHz l Gold metalization for high reliability
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BFP420
25-Line
OT343
Q62702-F1591
AMS 3630
a06 transistor
Q62702-F1591
ff 0401
transistor A06
marking A06
BFP420 A06
Code "A06" RF Semiconductor
BFP420 application notes
BFP420
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MMDTA06
Abstract: a06 transistor marking a06
Text: MMDTA06 ADVANCE INFORMATION 80V DUAL NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features & Benefits Mechanical Data • • • • • • • • • • BVCEO > 80V ICM = 1A Peak Pulse Current General purpose NPN transistors ideally suited for low power
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MMDTA06
AEC-Q101
J-STD-020
MIL-STD-202,
DS35114
MMDTA06
a06 transistor
marking a06
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MMDTA06
Abstract: No abstract text available
Text: MMDTA06 ADV AN CE I N FORM AT I ON 80V DUAL NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features & Benefits Mechanical Data • • • • • • • • • • BVCEO > 80V ICM = 1A Peak Pulse Current General purpose NPN transistors ideally suited for low power
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MMDTA06
AEC-Q101
DS35114
MMDTA06
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Untitled
Abstract: No abstract text available
Text: RT9203/A Preliminary Dual Regulators - Synchronous Buck PWM DC-DC and Linear Controller General Description Features The RT9203/A is a dual-output power controllers designed for high performance graphics cards and personal computers. The IC integrates a synchronous buck
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RT9203/A
RT9203/A
300kHz
DS9203/A-06
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LC 235 ATX
Abstract: power supply lc 235 atx
Text: RT9203/A Preliminary Dual Regulators - Synchronous Buck PWM DC-DC and Linear Controller General Description Features The RT9203/A is a dual-output power controllers designed for high performance graphics cards and personal computers. The IC integrates a synchronous buck
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RT9203/A
RT9203/A
300kHz
DS9203/A-06
LC 235 ATX
power supply lc 235 atx
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MPSa56
Abstract: transistor A55 LO5A A06 NPN MPS-A56 mpsa55 a56 transistor kps a56 MPS A56 transistor MPS-A05
Text: MPS-A55 • MPS-A56 COMPLEMENTARY SILICON AP MEDIUM POWER TRANSISTORS i II CASE T0-92A THE MPS-A05, MPS-A06, MPS-A55, MPS-A56 'ARE SILICON PLANAR EPITAXIAL„TRANSISTORS FOR AF DRIVERS AND OUTPUTS, AS WELL AS FOR UNIVERSAL APPLICATIONS. THE MPS-A05, MPS-A06 ARE NPN AND ARE COMPLEMENTARY TO
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MPS-A55
MPS-A56
MPS-A05,
MPS-A06,
MPS-A55,
MPS-A06
MPS-A55
MPS-A56
MPSa56
transistor A55
LO5A
A06 NPN
mpsa55
a56 transistor
kps a56
MPS A56 transistor
MPS-A05
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MPSA55
Abstract: A06 NPN mpsa56 mpsa06 MFS-A05 MPS-A05 MPS-A06 MPS-A55 MPS-A56 MPS A06
Text: MPS-A06 MPS-A56 MPS-A05 MPS-A55 W'ß\ COMPLEMENTARY SILICON AF MEDIUM POWER TRANSISTORS CASE TO-92A THE MPS-A05, MPS-A06, MPS-A55» MPS-A56 ARE SILICON PLANAR EPITAXIAL„TRANSISTORS FOR AF DRIVERS AND OUTPUTS, AS WELL AS FOR UNIVERSAL APPLICATIONS. THE MPS-A05,
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MPS-A05
MPS-A06
MPS-A55
MPS-A56
MPS-A05,
MPS-A06,
MPS-A55Â
MPSA55
A06 NPN
mpsa56
mpsa06
MFS-A05
MPS-A05
MPS-A55
MPS A06
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Untitled
Abstract: No abstract text available
Text: MPS-A05 • MPS-A06 MPS-A55 •MPS-A56 COMPLEMENTARY SILICON AP MEDIUM POWER TRANSISTORS * <l t e ± s . i = M = L ? « 1~ " x ” s ~ • CASE TO-92A THE MPS-A05, MPS-A06, MPS-A55» MPS-A56 'ARE SILICON PLANAR EPITAXIAL„TRANSISTORS FOR AF DRIVERS AND OUTPUTS, AS WELL AS
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MPS-A05
MPS-A06
MPS-A55
MPS-A56
O-92A
MPS-A05,
MPS-A06,
MPS-A55Â
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Untitled
Abstract: No abstract text available
Text: Transistors NPN General Purpose Transistor I SSTA06/M MSTA06/M PS A06 # External dimensions Units : mm •F eatures 1 ) B V ceo < 4 0 V (lc = *1 m A ) SSTA06 2 ) Complements the SSTA56/MMSTA56/MPSA56. 0 .9 5 ± g ; f 1 9 ± 0 .2 •P ackage, mark and packaging specifications
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SSTA06/M
MSTA06/M
SSTA06
SSTA56/MMSTA56/MPSA56.
MMSTA06
MPSA06
O-220FN
O-220FN
O220FP
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sta06
Abstract: mark T116
Text: Transistors I NPN General Purpose Transistor SST A06/MMSTA06/MPSA06 •Features •Externa dimensions Units : mm) Í ) B V c e o < 4 0 V ( I c ^ lm A ) 2 ) Com plem ents the SS T A 56 /M M S T A 5 6/M PS A 56 . SSTA06 •Package, mark and packaging specifications
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A06/MMSTA06/MPSA06
STA06
PSA06
SSTA06
STA06,
SSTA06
MMSTA06
MPSA06
mark T116
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a06 transistor
Abstract: transistor 468 TRANSISTOR A06 mpsa065 a06 amplifier transistor A55 MPSA55 GE 001755 a56 transistor Transistor B C 468
Text: G E SOLID STATE Öl ÏVEÏ3Û750Û1 DOIVES Signal Transistors MPS-A05, A06, A55, A56 Silicon Transistors TO-92 The GE/RCA MPS-A 05,06 NPN types and M PS-A 55,56 PNP types are planar epitaxial passivated silicon transistors de signed for medium current general purpose amplifier appli
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MPS-A05,
MPS-A05
MPS-A55
MPS-A06
MPS-A56
IZCS41H1
andMPS-A56.
a06 transistor
transistor 468
TRANSISTOR A06
mpsa065
a06 amplifier
transistor A55
MPSA55 GE
001755
a56 transistor
Transistor B C 468
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mpsa56
Abstract: transistor A55 TRANSISTOR A06 AN-41 MPS-A05 MPS-A06 MPS-A55 MPS-A56 MPS A05 transistor psa06
Text: MPS-A05,MPS-A06 NPN/MPS-A55,MPS-A56 continued E LECTRICAL CHARACTERISTICS ( T ^ = 2 5 ° C u n le ss o th e rw ise n o te d .) _ C h a r a c te r ist ic | Sym bol | M in | M ax | U n it O F F C H A R A C T E R IS T IC S C o lle c t o r -E m it t e r B r e a k d o w n V o lt a g e (1 )
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MPS-A05,
PS-A06
IMPN/MPS-A55
MPS-A56
MPS-A55
MPS-A06,
MPS-A55
mpsa56
transistor A55
TRANSISTOR A06
AN-41
MPS-A05
MPS-A06
MPS-A56
MPS A05 transistor
psa06
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Siemens DIODE E 1240
Abstract: AMS 3630 Code "A06" RF Semiconductor SIEMENS BFP420 Transistor MJE 540 HA 12432 SOT343-3 BFP420 application notes BFP420 A06 ff 0401 transistor
Text: S IE M E N S SIEGET 25 BFP420 NPN Silicon RF Transistor • • • • • • For High Gain Low Noise Amplifiers For Oscillators up to 10 GHz Noise Figure F = 1.05 dB at 1.8 GHz Outstanding Gms = 20 dB at 1.8 GHz Transition Frequency 1j = 25 GHz Gold metalization for high reliability
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BFP420
25-Line
Transistor25
Q62702-F1591
OT343
Siemens DIODE E 1240
AMS 3630
Code "A06" RF Semiconductor
SIEMENS BFP420
Transistor MJE 540
HA 12432
SOT343-3
BFP420 application notes
BFP420 A06
ff 0401 transistor
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SIEMENS BFP405
Abstract: marking A06 transistor A06
Text: SIEMENS SIEGET 25 BFP405 NPN Silicon RF Transistor • • • • • • For Low Current Applications For Oscillators up to 12 GHz Noise Figure F = 1.15 dB at 1.8 GHz Outstanding Gms = 22 dB at 1.8 GHz Transition Frequency fT = 25 GHz Gold metalization for high reliability
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BFP405
25-Line
Transistor25
62702-F-1592
OT343
SIEMENS BFP405
marking A06
transistor A06
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a06 transistor
Abstract: CHIP T503 S BFP450 siemens BFP450
Text: S IE M E N S SIEGET 25 BFP450 NPN Silicon RF Transistor • • • • • For Medium Power Amplifiers Compression Point P.1dB = +19 dBm at 1.8 GHz Maximum Available Gain G ma = 14 dB at 1.8 GHz Noise Figure F = 1.25 dB at 1.8 GHz Transition Frequency f j = 24 GHz
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25-Line
Transistor25
BFP450
Q62702-F1590
OT343
a06 transistor
CHIP T503 S
BFP450 siemens
BFP450
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Untitled
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS MPSA05; A06 NPN general purpose transistors Product specification Supersedes data of 1997 Mar 26 File under Discrete Semiconductors, SC04 Philips Sem iconductors 1998 Jul 21 PHILIPS Philips Semiconductors Product specification NPN general purpose transistors
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MPSA05;
MPSA06
MPSA56.
115104/00/03/pp8
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MARKING CODE A06
Abstract: marking 1G SOT23 sot-23 MARKING CODE G1 AH A06 sot-23 body marking 1P NPN e30551 marking A06 A12 marking amplifier A55 marking sot-23 Marking G1
Text: FERRANTI * semiconductors FMMT-A05 FM MT-AO6 NPN Silicon Planar Medium Power Transistors D E S C R IP T IO N M e d iu m pow er transistors designed fo r sm all and medium am plification from d.c. to radio frequencies, in applica tio n s such as Audio Frequency Am plifiers, Drivers,
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FMMT-A05
FMMT-A55
FMMT-A56.
OT-23
FMMT-A13
FMMT-A14
BCW67A
FMMT-A20
MARKING CODE A06
marking 1G SOT23
sot-23 MARKING CODE G1
AH A06
sot-23 body marking 1P NPN
e30551
marking A06
A12 marking
amplifier A55 marking
sot-23 Marking G1
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