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    74AC11086D Texas Instruments Quadruple 2-Input Exclusive-OR Gates 16-SOIC -40 to 85 Visit Texas Instruments Buy
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    Vishay Intertechnologies RCS120682R0FKEA

    Thick Film Resistors - SMD 0.5watt 82ohms 1% 100ppm
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    Vishay Intertechnologies RCS1206820RFKEA

    Thick Film Resistors - SMD 0.5watt 820ohms 1% 100ppm
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    Vishay Intertechnologies RCS12068K20FKEA

    Thick Film Resistors - SMD 0.5watt 8.2Kohms 1% 100ppm
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    Vishay Intertechnologies RCS12068R20FKEA

    Thick Film Resistors - SMD 0.5watt 8.2ohms 1% 100ppm
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    Mouser Electronics RCS12068R20FKEA 4,744
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    Vishay Intertechnologies RCS120680K6FKEA

    Thick Film Resistors - SMD RCS1206 100 80K6 1% ET1 e3
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    Mouser Electronics RCS120680K6FKEA
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    A S12068 Datasheets Context Search

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    Untitled

    Abstract: No abstract text available
    Text: SUM90N03-2m2P Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 a, e RDS(on) () ID (A) 0.0022 at VGS = 10 V 90 0.0027 at VGS = 4.5 V 90 Qg (Typ.) 82 nC TO-263 • TrenchFET Power MOSFET • 100 % Rg and UIS Tested • Material categorization:


    Original     		PDF SUM90N03-2m2P O-263 SUM90N03-2m2P-E3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    Untitled

    Abstract: No abstract text available
    Text: SUP90N03-03 Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) () ID (A)a, e 0.0029 at VGS = 10 V 90 0.0033 at VGS = 4.5 V 90 Qg (Typ) • TrenchFET Power MOSFET • 100 % Rg and UIS Tested • Compliant to RoHS Directive 2011/65/EU


    Original     		PDF SUP90N03-03 2011/65/EU O-220AB SUP90N03-03-E3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    RG 702 Diode

    Abstract: No abstract text available
    Text: SUP90N03-03 Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) () 30 ID (A)a, e 0.0029 at VGS = 10 V 90 0.0033 at VGS = 4.5 V 90 Qg (Typ) • TrenchFET Power MOSFET • 100 % Rg and UIS Tested • Compliant to RoHS Directive 2011/65/EU


    Original     		PDF SUP90N03-03 2011/65/EU O-220AB SUP90N03-03-E3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 RG 702 Diode

    74342

    Abstract: No abstract text available
    Text: SUM90N03-2m2P Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 a, e RDS(on) () ID (A) 0.0022 at VGS = 10 V 90 0.0027 at VGS = 4.5 V 90 Qg (Typ.) 82 nC TO-263 • TrenchFET Power MOSFET • 100 % Rg and UIS Tested • Material categorization:


    Original     		PDF SUM90N03-2m2P O-263 SUM90N03-2m2P-E3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 74342

    Untitled

    Abstract: No abstract text available
    Text: Si8487DB Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY ID (A)a, e VDS (V) RDS(on) () Max. 0.031 at VGS = - 10 V - 7.7 - 30 0.035 at VGS = - 4.5 V - 7.3 0.045 at VGS = - 2.5 V - 6.4 TrenchFET Power MOSFET Low-on Resistance Ultra-Small 1.6 mm x 1.6 mm Maximum Outline


    Original     		PDF Si8487DB Si8409DB 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    Untitled

    Abstract: No abstract text available
    Text: SUM90N03-2m2P Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 a, e RDS(on) () ID (A) 0.0022 at VGS = 10 V 90 0.0027 at VGS = 4.5 V 90 Qg (Typ.) 82 nC TO-263 • TrenchFET Power MOSFET • 100 % Rg and UIS Tested • Material categorization:


    Original     		PDF SUM90N03-2m2P O-263 SUM90N03-2m2P-E3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: SUP90N03-03 Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) () 30 ID (A)a, e 0.0029 at VGS = 10 V 90 0.0033 at VGS = 4.5 V 90 Qg (Typ) • TrenchFET Power MOSFET • 100 % Rg and UIS Tested • Compliant to RoHS Directive 2011/65/EU


    Original     		PDF SUP90N03-03 2011/65/EU O-220AB SUP90N03-03-E3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: SUP90N03-03 Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) () 30 ID (A)a, e 0.0029 at VGS = 10 V 90 0.0033 at VGS = 4.5 V 90 Qg (Typ) • TrenchFET Power MOSFET • 100 % Rg and UIS Tested • Compliant to RoHS Directive 2011/65/EU


    Original     		PDF SUP90N03-03 2011/65/EU O-220AB SUP90N03-03-E3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    SI8487DB-T1-E1

    Abstract: 71990 SI8902 si8487
    Text: Si8487DB Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY ID (A)a, e VDS (V) RDS(on) () Max. 0.031 at VGS = - 10 V - 7.7 - 30 0.035 at VGS = - 4.5 V - 7.3 0.045 at VGS = - 2.5 V - 6.4 TrenchFET Power MOSFET Low-on Resistance Ultra-Small 1.6 mm x 1.6 mm Maximum Outline


    Original     		PDF Si8487DB Si8409DB 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 SI8487DB-T1-E1 71990 SI8902 si8487

    Untitled

    Abstract: No abstract text available
    Text: SUP90N03-03 Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) () 30 ID (A)a, e 0.0029 at VGS = 10 V 90 0.0033 at VGS = 4.5 V 90 Qg (Typ) • TrenchFET Power MOSFET • 100 % Rg and UIS Tested • Compliant to RoHS Directive 2011/65/EU


    Original     		PDF SUP90N03-03 2011/65/EU O-220AB SUP90N03-03-E3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    si1308

    Abstract: SI1308EDL
    Text: New Product Si1308EDL Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () Max. ID (A)c 0.132 at VGS = 10 V 1.5 0.144 at VGS = 4.5 V 1.4 0.185 at VGS = 2.5 V 1.3 VDS (V) 30 Qg (Typ.) 1.4 nC • Smart Phones, Tablet PC’s - DC/DC Converters


    Original     		PDF Si1308EDL OT-323 SC-70 Si1308EDL-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 si1308

    Untitled

    Abstract: No abstract text available
    Text: New Product Si1308EDL Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () Max. ID (A)c 0.132 at VGS = 10 V 1.5 0.144 at VGS = 4.5 V 1.4 0.185 at VGS = 2.5 V 1.3 VDS (V) 30 Qg (Typ.) 1.4 nC • Smart Phones, Tablet PC’s - DC/DC Converters


    Original     		PDF Si1308EDL OT-323 SC-70 Si1308EDL-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A

    Untitled

    Abstract: No abstract text available
    Text: New Product Si1308EDL Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () Max. ID (A)c 0.132 at VGS = 10 V 1.5 0.144 at VGS = 4.5 V 1.4 0.185 at VGS = 2.5 V 1.3 VDS (V) 30 Qg (Typ.) 1.4 nC S • Smart Phones, Tablet PC’s - DC/DC Converters


    Original     		PDF Si1308EDL OT-323 SC-70 Si1308EDL-T1-GEemarks 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    PP1212

    Abstract: AN2010 255D 593D AN2011 C3216X5R IHLP2525 ZL2005 si7406dh si6404
    Text: ZL2005 Component Selection Guide May 01, 2009 Application Note AN2011.0 T D = on Tsw Eq. [1] 28 29 SGND V25 18 VSEN 30 XTEMP 17 VRTK 31 TACH 16 SS1 32 MGN 13 V1 15 SS0 EN 12 V0 CFG DLY0 11 FC1 14 UVLO PG DLY1 10 FC0 33 The buck converter shown in Figure 1 is a well- known


    Original     		PDF ZL2005 AN2011 PP1212 AN2010 255D 593D C3216X5R IHLP2525 si7406dh si6404

    Untitled

    Abstract: No abstract text available
    Text: SiHU3N50D www.vishay.com Vishay Siliconix D Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Optimal Design - Low Area Specific On-Resistance - Low Input Capacitance (Ciss) 550 RDS(on) max. () at 25 °C VGS = 10 V 3.2 Qg (max.) (nC) 20


    Original     		PDF SiHU3N50D O-251) 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    Untitled

    Abstract: No abstract text available
    Text: SiHG17N60D www.vishay.com Vishay Siliconix D Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Optimal Design 650 RDS(on) max. at 25 °C () VGS = 10 V Qg (Max.) (nC) 90 Qgs (nC) 14 Qgd (nC) 22 Configuration - Low Area Specific On-Resistance


    Original     		PDF SiHG17N60D O-247AC 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    Untitled

    Abstract: No abstract text available
    Text: SiHG17N60D www.vishay.com Vishay Siliconix D Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Optimal Design 650 RDS(on) max. at 25 °C () VGS = 10 V Qg (Max.) (nC) 90 Qgs (nC) 14 Qgd (nC) 22 Configuration - Low Area Specific On-Resistance


    Original     		PDF SiHG17N60D O-247AC 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    Untitled

    Abstract: No abstract text available
    Text: SiHG17N60D www.vishay.com Vishay Siliconix D Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Optimal Design 650 RDS(on) max. at 25 °C () VGS = 10 V Qg (Max.) (nC) 90 Qgs (nC) 14 Qgd (nC) 22 Configuration - Low Area Specific On-Resistance


    Original     		PDF SiHG17N60D O-247AC 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: SiHD3N50D www.vishay.com Vishay Siliconix D Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Optimal Design - Low Area Specific On-Resistance - Low Input Capacitance (Ciss) 550 RDS(on) max. () at 25 °C VGS = 10 V 3.2 Qg (max.) (nC) 20


    Original     		PDF SiHD3N50D O-252) 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    Untitled

    Abstract: No abstract text available
    Text: SiHP10N40D www.vishay.com Vishay Siliconix D Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Optimal Design - Low Area Specific On-Resistance - Low Input Capacitance (Ciss) 450 RDS(on) max. at 25 °C () VGS = 10 V 0.6 Qg max. (nC) 30


    Original     		PDF SiHP10N40D O-220AB 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: SiHF6N40D www.vishay.com Vishay Siliconix D Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Optimal Design - Low Area Specific On-Resistance - Low Input Capacitance (Ciss) - Reduced Capacitive Switching Losses - High Body Diode Ruggedness


    Original     		PDF SiHF6N40D 2011/65/EU O-220 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    forth dimension displays

    Abstract: SIHU3N50D-GE3
    Text: SiHU3N50D www.vishay.com Vishay Siliconix D Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Optimal Design - Low Area Specific On-Resistance - Low Input Capacitance (Ciss) 550 RDS(on) max. () at 25 °C VGS = 10 V 3.2 Qg (max.) (nC) 20


    Original     		PDF SiHU3N50D O-251) 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 forth dimension displays SIHU3N50D-GE3

    SIHF6N40D-E3

    Abstract: No abstract text available
    Text: SiHF6N40D www.vishay.com Vishay Siliconix D Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Optimal Design - Low Area Specific On-Resistance - Low Input Capacitance (Ciss) - Reduced Capacitive Switching Losses - High Body Diode Ruggedness


    Original     		PDF SiHF6N40D O-220 2011/65/EU 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 SIHF6N40D-E3

    Untitled

    Abstract: No abstract text available
    Text: SiHP10N40D www.vishay.com Vishay Siliconix D Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Optimal Design - Low Area Specific On-Resistance - Low Input Capacitance (Ciss) 450 RDS(on) max. at 25 °C () VGS = 10 V 0.6 Qg max. (nC) 30


    Original     		PDF SiHP10N40D O-220AB 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12