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    A 1282 TRANSISTOR Search Results

    A 1282 TRANSISTOR Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation

    A 1282 TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    OMRON lzn2

    Abstract: RELAY OMRON LZN2 RELAY OMRON LZN G5Y-154P lzn2 OMRON RELAY LZN omron type LZN eac reed relay omron relay lzn2 Omron LZN
    Text: Omron A5 Catalogue 2007 1-282 11/9/06 10:16 am Page 10 Technical Information – Relays • Relay Classification Model G4W Discrete Enclosure Ratings Features Unsealed Designed for manual soldering G2R Flux protection Design inhibits flux intrusion into the casing fro


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    2N4923

    Abstract: No abstract text available
    Text: 2N4923 NPN silicon epitaxial transistor 2.50 Transistors Transistors Bip. 1 of 1 Home Part Number: 2N4923 Online Store 2N4923 Diodes NPN s ilic o n epitax ial t rans is to r Transistors Enter code INTER3 at


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    PDF 2N4923 com/2n4923 2N4923 O-126var

    106Q

    Abstract: MOC8204 MOC8205 MOC8206
    Text: HIGH VOLTAGE TRANSISTOR cmocoLmERs . . . consist of gallium-arsenide infrared emitting diodes optically coupled to high voltage, silicon, phototransistor detectors in a standard 6-pin DIP package. They are designed for applications requiring high voltage output and are particularly useful in copy


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    PDF E54915 106Q MOC8204 MOC8205 MOC8206

    Untitled

    Abstract: No abstract text available
    Text: ON Semiconductort MPSA13 MPSA14 * Darlington Transistors NPN Silicon *ON Semiconductor Preferred Device MAXIMUM RATINGS Rating Symbol Value Unit Collector −Emitter Voltage VCES 30 Vdc Collector −Base Voltage VCBO 30 Vdc Emitter −Base Voltage VEBO 10


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    PDF MPSA13 MPSA14 O-226AA)

    250v 60A mosfet

    Abstract: 1E14 2E12 2N7296D 2N7296H 2N7296R
    Text: S E M I C O N D U C T O R REGISTRATION PENDING Currently Available as FRF254 D, R, H 2N7296D, 2N7296R 2N7296H Radiation Hardened N-Channel Power MOSFETs November 1994 Features Package • 17A, 250V, RDS(on) = 0.185Ω TO-254AA • Second Generation Rad Hard MOSFET Results From New Design Concepts


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    PDF FRF254 2N7296D, 2N7296R 2N7296H O-254AA 100KRAD 300KRAD 1000KRAD 3000KRAD 250v 60A mosfet 1E14 2E12 2N7296D 2N7296H 2N7296R

    b982

    Abstract: b1676 b896 SP 1191 B1328 B3045 FLASH TRANSLATION LAYER FTL 5498 transistor X28F008SA-120 b3305
    Text: 28F008SA 8-MBIT 1-MBIT x 8 FLASH MEMORY SmartDie Product Specification Y Y Y Y High-Density Symmetrically Blocked Architecture Sixteen 64-Kbyte Blocks Extended Cycling Capability 100K Block Erase Cycles 1 6M Block Erase Cycles per Chip Automated Byte Write and Block Erase


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    PDF 28F008SA 64-Kbyte X28F008SA-120 AP-359 AP-360 25F008SA AP-364 b982 b1676 b896 SP 1191 B1328 B3045 FLASH TRANSLATION LAYER FTL 5498 transistor X28F008SA-120 b3305

    LM1262

    Abstract: LM1205 LM1208 LM1282 LM1282N N28B national semiconductor 1976 WF VQC 10
    Text: a t i o n a l S e m i c o n d u c t o r LM1282 110 MHz RGB Video Amplifier System with On Screen Display OSD General Description Features The LM 1282 is a full feature video a m plifier w ith OSD in­ puts, all w ithin a 28-pin package. This part is intended for


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    PDF LM1282 LM1282 28-pin bSG1124 LM1262 LM1205 LM1208 LM1282N N28B national semiconductor 1976 WF VQC 10

    Untitled

    Abstract: No abstract text available
    Text: 2SB 1282 TP4J10 I PNPff—U > K > h 7 > P N P Darlington Transistor .4.; I.-.- \f>£ISI O utline Dimensions 4.6±o.2 Equ ivalent C ircu it 2.7 ± 0.2 0.7 to.2 Unit ! mm Case 1 ITO-220 A b so lu te M ax. R atin g s m ie b I ; J u n c tio n T e m p e ra tu re


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    PDF TP4J10) ITO-220 2SB1282

    74LS324

    Abstract: 7400 TTL 74LS327 7402, 7404, 7408, 7432, 7400 80C96 74251 multiplexer 74C923 equivalent Flip-Flop 7473 74LS324 equivalent 74C08 equivalent
    Text: N T E ELECTRONICS INC 17E H ^3125=1 G0G513S Q B - o S V. ! - TRANSISTOR-TRANSISTOR LOGIC INCLUDES SERIES 74C CMOS NTE TYPE NO. •DESCRIPTION . 7214 7400 74C00 74H00 74LS00 74S00 3-State Sel/Mlpx Quad 2-Input Pos Quad 2-Input Pos Quad 2-Input Pos Quad 2-Input Pos


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    PDF G0G513S 74C00 74H00 74LS00 74S00 74H01 74LS01 74C02 74LS02 74S02 74LS324 7400 TTL 74LS327 7402, 7404, 7408, 7432, 7400 80C96 74251 multiplexer 74C923 equivalent Flip-Flop 7473 74LS324 equivalent 74C08 equivalent

    BD203-BD204

    Abstract: BD201 RCA-BD201 17521 rca BD202 BD203 BD204 0017525 BD203 npn
    Text: ÏÏÏ 38750816 E SOLID STATE Pro Electron Power Transistors DE~J 3 Ô 7 S 0 Û 1 G D 1 7 S B 1 □ 01E 17521 D^ - BD201, BD202, BD203, BD204 File Num ber


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    PDF 750fll BD201, BD202, BD203, BD204 O-220AB RCA-BD201 BD203 BD202 BD203-BD204 BD201 17521 rca 0017525 BD203 npn

    2SC1271

    Abstract: EP253 transistors 1UW
    Text: 5 - - FOR U SE BY E L E C T R IC IA N S O V E R S E A S : •M-EiiOSWHE New Transistor Manual lists all the transistors registered with the Electronic Industries Association of Japan (EIAJ), arranged in a manner easy to look up. We hope that you will make full use of the data provided in this manual by referring to the Japanese-English


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    PDF Tc-25 re-25-C) /-175MHz. /-175MHz, 2SC1271 EP253 transistors 1UW

    MRF221

    Abstract: wide band choke vk200 MRF216 2N6081 VK200 VK200 ferrite broad band operation
    Text: M RF216 silicon Tine RF L ine 40 W — 175 MHz CONTROLLED O RF POWER TRANSISTOR NPN SILICON NPN SILICON RF POWER TRANSISTOR . . .designed for 12.5 V o lt V H F large-signal am plifier applications in industrial and commercial FM equipment operating to 175 MHz.


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    PDF MRF216 MRF221 2N6081 MRF221 wide band choke vk200 MRF216 VK200 VK200 ferrite broad band operation

    6.5S5

    Abstract: 5S51 ely transformers I282 A IRFM054 SS452 DD113
    Text: Data Sheet No. PD-9.709A INTERNATIONAL RECTIFIER l O R j AVALANCHE ENERGY RATED AND dv/dt RATED HEXFET TRANSISTOR IRFMQ54 N-CHANNEL 60 Volt, 0.027 Ohm HEXFET Product Summary The HEXFET® technology is the key to International Rectifier’s advanced line of power M O SFE T transistors.


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    PDF IRFM054 IRFM054D IRFM054U O-254 MIL-S-19500 I-284 6.5S5 5S51 ely transformers I282 A IRFM054 SS452 DD113

    a06 transistor

    Abstract: CHIP T503 S BFP450 siemens BFP450
    Text: S IE M E N S SIEGET 25 BFP450 NPN Silicon RF Transistor • • • • • For Medium Power Amplifiers Compression Point P.1dB = +19 dBm at 1.8 GHz Maximum Available Gain G ma = 14 dB at 1.8 GHz Noise Figure F = 1.25 dB at 1.8 GHz Transition Frequency f j = 24 GHz


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    PDF 25-Line Transistor25 BFP450 Q62702-F1590 OT343 a06 transistor CHIP T503 S BFP450 siemens BFP450

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA Order thle document by MHPM7B12A120A/D SEMICONDUCTOR TECHNICAL DATA MHPM7B12A120A Hybrid Power Module Motorola Pwfttrod Dovtco Integrated Power Stage for 2.0 hp Motor Drives This module Integrates a 3-phase Input rectifier bridge, 3-phase output Inverter and brake transistor/diode In a single convenient package. The output


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    PDF MHPM7B12A120A/D MHPM7B12A120A

    Untitled

    Abstract: No abstract text available
    Text: Tfipl HEWLETT mL'KM PACKARD Avantek Products Thin-Film Cascadable Amplifier 10 to 2000 MHz Technical Data UTO/UTC 2021 Series Features • Frequency Bange: 10 to 2000 MHz • Noise Figure: 3.7 dB Typ • Low VSWR • Temperature Compensated Applications


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    Untitled

    Abstract: No abstract text available
    Text: cnr S6E SEMTECH CORP D 5 m 613^13^ 0DG322M Tb? « S E T 30 AMP, 400 WATT POSITIVE HYBRID VOLTAGE REGULATORS ABSOLUTE MAXIMUM RATINGS PARAMETER In p u t Voltage In p u t-O u tp u t V oltage D iffe re ntia l P ow er D is s ip a tio n 1 SYM BOL MAXIMUM UNITS


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    PDF 0DG322M DD0322Ã

    Transistor MP 1715

    Abstract: transistor EM 9163 D 1878 TRANSISTOR
    Text: T h o t HEWLETT mL/ÜMP A C K A R D Avantek Products Thin-Film Cascadable Amplifier 10 to 2000 MHz Technical Data UTO/UTC 2021 Series Features Description Pin Configuration • Frequency Range: 10 to 2000 MHz The 2021 Series Is a wideband thin-film bipolar RF amplifier with


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    PCF79735

    Abstract: PCF7931 philips PCF7931XP PCF7930 PCF7930XP pcf7973 pcf79735s Philips Semiconductors Selection Guide pcf79*5 philips remote control ic 14 pin
    Text: Philips Semiconductors Selection guide Functional index PAGE CONTROL DEVICES FOR AUTOMOTIVE Multiplexed Bus Products Application info KIE 07/91 ME - Bit timing parameters for CAN networks 54 Application info EMC - Using the CAN transceiver 82C250 with unshielded bus cables


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    PDF P8xC592 P8xCE598 P82C150 AN94088 82C200 PCA82C250 PCA82C251 PCA82C252 82C250 PCF79735 PCF7931 philips PCF7931XP PCF7930 PCF7930XP pcf7973 pcf79735s Philips Semiconductors Selection Guide pcf79*5 philips remote control ic 14 pin

    82S62

    Abstract: "Parity Checker" N82S62A N82S62F S82S62 S82S62F S82S62X N82S62
    Text: Am82S62 Nine-Input Parity Checker/Generator Distinctive Characteristics • • • O D D /EV EN parity outputs Inhibit input to disable both outputs High-speed expansion input — Pg • PNP inputs • Advanced Schottky technology • % reliability assurance testing in compliance wi


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    PDF Am82S62 82S62 AmS2S62 "Parity Checker" N82S62A N82S62F S82S62 S82S62F S82S62X N82S62

    Untitled

    Abstract: No abstract text available
    Text: Z1 Am79M570/Am79M574 Advanced Micro Devices Metering Subscriber Line Interface Circuit DISTINCTIVE CHARACTERISTICS • Programmable constant resistance feed Supports 2.2-V RMS metering 12 and 16 kHz ■ On-chip switching regulator for low-power dissipation


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    PDF Am79M570/Am79M574 11701B-017 Am79M570 Am79M57X

    TEA5703

    Abstract: mm1279
    Text: Æ T SGS-THOMSON TEA5703 fôüD 5 [l[L[I©Tr^(Q)^D(gi ADVANCED 3-HEAD PLAY-BACK AND RECORD AMPLIFIER FOR VCR ADVANCE DATA PLAY-BACK MODE - LOW NOISE AND WIDE BAND AMPLIFIERS FOR 3 HEADS -AUTOMATIC OFFSET CANCELLATION BE­ TWEEN THE 3 SELECTED HEADS - ONE PLAY-BACK OUTPUT WITHOUT AGC


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    PDF TEA5703 TEA5703 mm1279

    SEN 1327

    Abstract: CI06B pnp phototransistor H11A10 1307 TRANSISTOR D34C1 SCR ci06b "Photo Interrupter" dual transistor H11B1 4N38
    Text: PROGRAMMABLE THRESHOLD COUPLER GE TYPE H11A10 PAGE NO. 1281 CURRENT ISOLATION VOLTAGE «VpK» TRANSFER RATIO MIN. MIN. 1500 1 10% ID nA MAX. BVceo (VOLTS) MIN. 50 30 TYPICAL OiSEC.) VCEISAT) MAX. Tr Tf 1 2 2 1 1 2 2 2 2 I 5 1I 55 5 5 5 5 5 5 4 .4 .4 .4 1.0


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    PDF H11A10 H11AA1 H11AA2 H11D1 H11D2 H11D3 H11D4 4N38A H11B1 H11B2 SEN 1327 CI06B pnp phototransistor 1307 TRANSISTOR D34C1 SCR ci06b "Photo Interrupter" dual transistor 4N38

    BT 1840 PA

    Abstract: pms Bridge Rectifier THA 1200 S uaa 1300
    Text: MOTOROLA Order this documant by MHPM7B18A120B/D SEMICONDUCTOR TECHNICAL DATA 7 16 120B MHPM B A Hybrid Power Module Motore « Profond Dovfoa Integrated Power Stage for 3.0 hp Motor Drives This module Integrates a 3-phase Input rectifier bridge, 3-phase output


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    PDF MHPM7B18A120B/D MHPM7B16A120B BT 1840 PA pms Bridge Rectifier THA 1200 S uaa 1300