BAS40-07W
Abstract: No abstract text available
Text: BAS40-07W 3 Silicon Schottky Diode 4 General-purpose diode for high-speed switching Circuit protection Voltage clamping 2 High-level detection and mixing 4 1 3 2 1 VPS05605 EHA07008 Type BAS40-07W Marking Pin Configuration 47s 1=C1 2=C2 3=A2 4=A1 -
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BAS40-07W
VPS05605
EHA07008
OT343
EHB00039
Aug-23-2001
EHB00038
BAS40-07W
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PDF
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marking code g1s
Abstract: Q62702-F1774 SOT 343 MARKING BF
Text: BF 2030W Silicon N-Channel MOSFET Tetrode Preliminary data 3 • For low noise, high gain controlled 4 input stages up to 1GHz • Operating voltage 5V 2 1 VPS05605 ESD: Electrostatic discharge sensitive device, observe handling precaution Type Marking Ordering Code
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Original
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VPS05605
Q62702-F1774
OT-343
Jun-05-1998
marking code g1s
Q62702-F1774
SOT 343 MARKING BF
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PDF
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BAT68-07W
Abstract: No abstract text available
Text: BAT68-07W Silicon Schottky Diodes 3 For mixer applications in the VHF / UHF range 4 For high-speed switching applications 2 1 VPS05605 4 1 3 2 EHA07008 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking BAT68-07W 87s
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BAT68-07W
VPS05605
EHA07008
OT343
EHD07103
EHD07104
Aug-08-2001
BAT68-07W
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PDF
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Silicon N Channel MOSFET Tetrode
Abstract: Q62702-F1772 marking code g1s BF 2000W
Text: BF 2000W Silicon N Channel MOSFET Tetrode Target data sheet 3 • Short-channel transistor 4 with high S/C quality factor • For low-noise, gain-controlled input stages up to 1 GHz 2 1 Type Marking Ordering Code BF 2000W NDs Q62702-F1772 VPS05605 Pin Configuration
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Q62702-F1772
VPS05605
OT-343
Silicon N Channel MOSFET Tetrode
Q62702-F1772
marking code g1s
BF 2000W
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Untitled
Abstract: No abstract text available
Text: BAT 64-07W Silicon Schottky Diodes 3 • For low-loss, fast-recovery, meter protection, 4 bias isolation and clamping applications • Integrated diffused guard ring • Low forward voltage 2 1 VPS05605 4 1 3 2 EHA07008 ESD: Electrostatic discharge sensitive device, observe handling precaution!
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4-07W
VPS05605
EHA07008
OT-343
50/60Hz,
EHB00059
Oct-07-1999
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PDF
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marking 81W
Abstract: No abstract text available
Text: BAR 81W Silicon RF Switching Diode 3 Design for use in shunt configuration 4 High shunt signal isolation Low shunt insertion loss 2 1 Type Marking BAR 81W BBs Pin Configuration 1=A 2=C 3=A VPS05605 Package 4=C SOT-343 Maximum Ratings Parameter Symbol
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Original
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VPS05605
OT-343
Oct-05-1999
100MHz
marking 81W
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ZL 58
Abstract: No abstract text available
Text: BFP 183W NPN Silicon RF Transistor 3 For low-noise, high-gain broadband amplifiers at 4 collector currents from 2 mA to 30 mA fT = 8 GHz F = 1.2 dB at 900 MHz 2 1 VPS05605 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type
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Original
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VPS05605
OT-343
Oct-12-1999
ZL 58
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PDF
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Untitled
Abstract: No abstract text available
Text: BFP 136W NPN Silicon RF Transistor 3 For power amplifier in DECT and PCN systems 4 fT = 5.5GHz Gold metalization for high reliability 2 1 VPS05605 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking BFP 136W PAs Pin Configuration
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Original
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VPS05605
OT-343
900MHz
Oct-12-1999
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PDF
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Untitled
Abstract: No abstract text available
Text: BF 2030W Silicon N-Channel MOSFET Tetrode 3 For low noise, high gain controlled 4 input stages up to 1GHz Operating voltage 5V Drain AGC HF Input G2 G1 R G1 2 HF Output + DC 1 VPS05605 GND VGG EHA07461 ESD: Electrostatic discharge sensitive device, observe handling precaution!
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Original
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VPS05605
EHA07461
OT-343
Feb-08-2001
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PDF
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BFP620
Abstract: BFP620 acs BFP620 applications note GFT45
Text: BFP620 NPN Silicon Germanium RF Transistor 3 4 High gain low noise RF transistor Provides outstanding performance for a wide range of wireless applications 2 Ideal for CDMA and WLAN applications Outstanding noise figure F = 0.7 dB at 1.8 GHz 1 VPS05605
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BFP620
VPS05605
OT343
Apr-07-2003
BFP620
BFP620 acs
BFP620 applications note
GFT45
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PDF
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IC 7481 pin configuration
Abstract: IC 7481 ev 2816 01177 ic rom 2816 BFP520 BFP520 application notes k 3683 transistor
Text: SIEGET 45 BFP520 NPN Silicon RF Transistor 3 For highest gain low noise amplifier 4 at 1.8 GHz and 2 mA / 2 V Outstanding Gms = 23 dB Noise Figure F = 0.95 dB For oscillators up to 15 GHz 2 Transition frequency fT = 45 GHz 1 VPS05605 Gold metallization for high reliability
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BFP520
VPS05605
OT343
50Ohm
45GHz
-j100
Sep-26-2001
IC 7481 pin configuration
IC 7481
ev 2816
01177
ic rom 2816
BFP520
BFP520 application notes
k 3683 transistor
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PDF
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BF2030W
Abstract: No abstract text available
Text: BF2030W Silicon N-Channel MOSFET Tetrode 3 For low noise, high gain controlled 4 input stages up to 1GHz Operating voltage 5V Drain AGC HF Input G2 G1 R G1 2 HF Output + DC 1 VPS05605 GND VGG EHA07461 ESD: Electrostatic discharge sensitive device, observe handling precaution!
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Original
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BF2030W
VPS05605
EHA07461
OT343
Oct-05-2001
BF2030W
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PDF
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Untitled
Abstract: No abstract text available
Text: BFP183W NPN Silicon RF Transistor 3 For low-noise, high-gain broadband amplifiers at 4 collector currents from 2 mA to 30 mA fT = 8 GHz F = 1.2 dB at 900 MHz 2 1 VPS05605 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type
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BFP183W
VPS05605
OT343
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PDF
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Untitled
Abstract: No abstract text available
Text: BFP460 NPN Silicon RF Transistor* 3 4 • For low voltage / low current applications • Ideal for VCO modules and low noise amplifiers • Low noise figure: 1.1 dB at 1.8 GHz 2 • Excellent ESD performance typical value > 1500V HBM 1 VPS05605 • High fT of 22 GHz
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BFP460
VPS05605
OT343
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VPS05605
Abstract: transistor marking 47s bas 44 marking 47s
Text: BAS 40-07W Silicon Schottky Diode Preliminary data 3 • General-purpose diode for high-speed switching 4 • Circuit protection • Voltage clamping • High-level detecting and mixing • Available with CECC quality assessment 2 1 VPS05605 BAS 40-07W Type
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0-07W
VPS05605
Q62702-
OT-343
Sep-09-1998
VPS05605
transistor marking 47s
bas 44
marking 47s
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PDF
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BFP36
Abstract: No abstract text available
Text: BFP360W NPN Silicon RF Transistor 3 Preliminary data 4 Low voltage/ low current operation For low noise amplifiers For Oscillators up to 3.5 GHz and Pout > 10 dBm 2 Low noise figure: 1.0 dB at 1.8 GHz 1 VPS05605 ESD: Electrostatic discharge sensitive device, observe handling precaution!
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BFP360W
VPS05605
OT343
1E-14
Jan-28-2003
BFP36
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PDF
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Untitled
Abstract: No abstract text available
Text: BFP182W NPN Silicon RF Transistor 3 For low noise, high-gain broadband amplifiers at 4 collector currents from 1 mA to 20 mA fT = 8 GHz F = 1.2 dB at 900 MHz 2 1 VPS05605 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type
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BFP182W
VPS05605
OT343
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w1901
Abstract: No abstract text available
Text: BAS 28W Silicon Switching Diode Array 3 • For high-speed switching applications 4 • Electrical insulated diodes 4 2 3 Di1 1 Di2 1 VPS05605 2 EHA07289 Type Marking BAS 28W JTs Pin Configuration 1 = C1 2 = C2 3 = A2 Package 4 = A1 SOT-343 Maximum Ratings
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VPS05605
EHA07289
OT-343
Oct-07-1999
EHB00037
EHB00034
w1901
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PDF
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marking 47s
Abstract: No abstract text available
Text: BAS 40-07W Silicon Schottky Diode • General-purpose diode for high-speed switching 3 • Circuit protection 4 • Voltage clamping • High-level detecting and mixing 2 1 VPS05605 4 1 3 2 EHA07008 Type Marking BAS 40-07W 47s Pin Configuration 1=C1 2=C2 3=A2
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Original
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0-07W
VPS05605
EHA07008
OT-343
EHB00040
EHB00041
Oct-07-1999
EHD07068
marking 47s
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PDF
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Untitled
Abstract: No abstract text available
Text: BFP 182W NPN Silicon RF Transistor 3 For low noise, high-gain broadband amplifiers at 4 collector currents from 1 mA to 20 mA fT = 8 GHz F = 1.2 dB at 900 MHz 2 1 VPS05605 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type
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Original
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VPS05605
OT-343
900MHz
Oct-12-1999
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PDF
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900 mhz schottky diode
Abstract: marking 55 Sot-343
Text: BAT 63-07W Silicon Schottky Diode Preliminary data 3 • Low barrier diode for detectors up to GHz 4 frequencies • For high-speed switching applications • Zero bias detector diode 2 1 4 1 3 2 VPS05605 EHA07008 ESD: Electrostatic discharge sensitive device, observe handling precaution!
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Original
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3-07W
VPS05605
EHA07008
OT-343
Aug-05-1999
900 mhz schottky diode
marking 55 Sot-343
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PDF
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BF2040W
Abstract: No abstract text available
Text: BF2040W Silicon N-Channel MOSFET Tetrode 3 For low noise, high gain controlled 4 input stages up to 1GHz Operating voltage 5V Drain AGC HF Input G2 G1 R G1 2 HF Output + DC 1 VPS05605 GND VGG EHA07461 ESD: Electrostatic discharge sensitive device, observe handling precaution!
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Original
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BF2040W
VPS05605
EHA07461
OT343
Aug-03-2001
BF2040W
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PDF
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BFP540
Abstract: INFINEON application note
Text: SIEGET 45 BFP540 NPN Silicon RF Transistor Preliminary data 3 For highest gain low noise amplifier 4 at 1.8 GHz Outstanding Gms = 21 dB Noise Figure F = 0.9 dB Gold metallization for high reliability 2 SIEGET 45 - Line 1 VPS05605 ESD: Electrostatic discharge sensitive device, observe handling precaution!
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Original
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BFP540
VPS05605
OT343
50Ohm
-j100
Aug-09-2001
BFP540
INFINEON application note
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PDF
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BFP460
Abstract: No abstract text available
Text: BFP460 NPN Silicon RF Transistor* 3 4 • For low voltage / low current applications • Ideal for VCO modules and low noise amplifiers • Low noise figure: 1.1 dB at 1.8 GHz 2 • Excellent ESD performance • High fT of 22 GHz 1 VPS05605 * Short-term description
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BFP460
VPS05605
OT343
Jun-14-2004
BFP460
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