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    2030R

    Abstract: No abstract text available
    Text: BF 2030R Silicon N-Channel MOSFET Tetrode  For low noise, high gain controlled input stages up to 1GHz  Operating voltage 5V Drain AGC HF Input G2 G1 R G1 HF Output + DC GND VGG EHA07461 ESD: Electrostatic discharge sensitive device, observe handling precaution!


    Original     		PDF 2030R EHA07461 OT-143R Feb-09-2001 2030R

    Untitled

    Abstract: No abstract text available
    Text: BF 2030W Silicon N-Channel MOSFET Tetrode 3  For low noise, high gain controlled 4 input stages up to 1GHz  Operating voltage 5V Drain AGC HF Input G2 G1 R G1 2 HF Output + DC 1 VPS05605 GND VGG EHA07461 ESD: Electrostatic discharge sensitive device, observe handling precaution!


    Original     		PDF VPS05605 EHA07461 OT-343 Feb-08-2001

    BF2030W

    Abstract: No abstract text available
    Text: BF2030W Silicon N-Channel MOSFET Tetrode 3  For low noise, high gain controlled 4 input stages up to 1GHz  Operating voltage 5V Drain AGC HF Input G2 G1 R G1 2 HF Output + DC 1 VPS05605 GND VGG EHA07461 ESD: Electrostatic discharge sensitive device, observe handling precaution!


    Original     		PDF BF2030W VPS05605 EHA07461 OT343 Oct-05-2001 BF2030W

    Untitled

    Abstract: No abstract text available
    Text: BF2030. Silicon N-Channel MOSFET Tetrode • For low noise, high gain controlled input stages up to 1GHz • Operating voltage 5V Drain AGC HF Input G2 G1 R G1 HF Output + DC GND VGG EHA07461 ESD: Electrostatic discharge sensitive device, observe handling precaution!


    Original     		PDF BF2030. EHA07461 BF2030 BF2030R BF2030W OT143 OT143R OT343

    VPS05178

    Abstract: ma1022
    Text: BF 2030 Silicon N-Channel MOSFET Tetrode Preliminary data 3  For low noise, high gain controlled input stages up to 1GHz 4  Operating voltage 5V 2 Drain AGC HF Input G2 G1 R G1 HF Output + DC 1 VPS05178 GND VGG EHA07461 ESD: Electrostatic discharge sensitive device, observe handling precaution!


    Original     		PDF VPS05178 EHA07461 OT-143 Dec-10-1999 VPS05178 ma1022

    Untitled

    Abstract: No abstract text available
    Text: BF2030. Silicon N-Channel MOSFET Tetrode • For low noise, high gain controlled input stages up to 1GHz • Operating voltage 5V Drain AGC HF Input G2 G1 R G1 HF Output + DC GND VGG EHA07461 ESD: Electrostatic discharge sensitive device, observe handling precaution!


    Original     		PDF BF2030. EHA07461 BF2030 BF2030R BF2030W OT143 OT143R OT343 dis00k Sep-29-2004

    Untitled

    Abstract: No abstract text available
    Text: BF 2040 Silicon N-Channel MOSFET Tetrode 3  For low noise, high gain controlled input stages up to 1GHz 4  Operating voltage 5V 2 Drain AGC HF Input G2 G1 R G1 HF Output + DC 1 VPS05178 GND VGG EHA07461 ESD: Electrostatic discharge sensitive device, observe handling precaution!


    Original     		PDF VPS05178 EHA07461 OT-143 Feb-14-2001

    Untitled

    Abstract: No abstract text available
    Text: BF 2030 Silicon N-Channel MOSFET Tetrode 3  For low noise, high gain controlled input stages up to 1GHz 4  Operating voltage 5V 2 Drain AGC HF Input G2 G1 R G1 HF Output + DC 1 VPS05178 GND VGG EHA07461 ESD: Electrostatic discharge sensitive device, observe handling precaution!


    Original     		PDF VPS05178 EHA07461 OT-143 Feb-09-2001

    BF2040W

    Abstract: No abstract text available
    Text: BF2040W Silicon N-Channel MOSFET Tetrode 3  For low noise, high gain controlled 4 input stages up to 1GHz  Operating voltage 5V Drain AGC HF Input G2 G1 R G1 2 HF Output + DC 1 VPS05605 GND VGG EHA07461 ESD: Electrostatic discharge sensitive device, observe handling precaution!


    Original     		PDF BF2040W VPS05605 EHA07461 OT343 Aug-03-2001 BF2040W

    BF2030

    Abstract: BF2030R BF2030W
    Text: BF2030. Silicon N-Channel MOSFET Tetrode • For low noise, high gain controlled input stages up to 1GHz • Operating voltage 5V Drain AGC HF Input G2 G1 R G1 HF Output + DC GND VGG EHA07461 ESD: Electrostatic discharge sensitive device, observe handling precaution!


    Original     		PDF BF2030. EHA07461 BF2030 OT143 BF2030R OT143R BF2030W OT343 Apr-23-2004 BF2030 BF2030R BF2030W

    Untitled

    Abstract: No abstract text available
    Text: BF 2040W Silicon N-Channel MOSFET Tetrode 3  For low noise, high gain controlled 4 input stages up to 1GHz  Operating voltage 5V Drain AGC HF Input G2 G1 R G1 2 HF Output + DC 1 VPS05605 GND VGG EHA07461 ESD: Electrostatic discharge sensitive device, observe handling precaution!


    Original     		PDF VPS05605 EHA07461 OT-343 Feb-14-2001

    BF2040

    Abstract: VPS05178
    Text: BF2040 Silicon N-Channel MOSFET Tetrode 3  For low noise, high gain controlled input stages up to 1GHz 4  Operating voltage 5V 2 Drain AGC HF Input G2 G1 R G1 HF Output + DC 1 VPS05178 GND VGG EHA07461 ESD: Electrostatic discharge sensitive device, observe handling precaution!


    Original     		PDF BF2040 VPS05178 EHA07461 OT143 Aug-03-2001 BF2040 VPS05178

    BF2040

    Abstract: VPS05178 K1428
    Text: BF2040 Silicon N-Channel MOSFET Tetrode 3  For low noise, high gain controlled input stages up to 1GHz 4  Operating voltage 5V 2 Drain AGC HF Input G2 G1 R G1 HF Output + DC 1 VPS05178 GND VGG EHA07461 ESD: Electrostatic discharge sensitive device, observe handling precaution!


    Original     		PDF BF2040 VPS05178 EHA07461 OT143 Oct-05-2001 BF2040 VPS05178 K1428

    sot143 marking code G2

    Abstract: DIN 6784 BF2030 BF2030R BF2030W BFP181 BFP181R BGA420 E6327
    Text: BF2030. Silicon N-Channel MOSFET Tetrode • For low noise, high gain controlled input stages up to 1GHz • Operating voltage 5V Drain AGC HF Input G2 G1 R G1 HF Output + DC GND VGG EHA07461 ESD: Electrostatic discharge sensitive device, observe handling precaution!


    Original     		PDF BF2030. EHA07461 BF2030 OT143 BF2030R OT143R BF2030W OT343 sot143 marking code G2 DIN 6784 BF2030 BF2030R BF2030W BFP181 BFP181R BGA420 E6327

    BF2030W

    Abstract: No abstract text available
    Text: BF2030W Silicon N-Channel MOSFET Tetrode 3  For low noise, high gain controlled 4 input stages up to 1GHz  Operating voltage 5V Drain AGC HF Input G2 G1 R G1 2 HF Output + DC 1 VPS05605 GND VGG EHA07461 ESD: Electrostatic discharge sensitive device, observe handling precaution!


    Original     		PDF BF2030W VPS05605 EHA07461 OT343 Aug-03-2001 BF2030W

    2030R

    Abstract: No abstract text available
    Text: BF 2030R Silicon N-Channel MOSFET Tetrode Preliminary data • For low noise, high gain controlled input stages up to 1GHz • Operating voltage 5V Drain AGC HF Input G2 G1 R G1 HF Output + DC GND VGG EHA07461 ESD: Electrostatic discharge sensitive device, observe handling precaution!


    Original     		PDF 2030R EHA07461 OT-143R Jan-17-2000 2030R

    SOT 343 MARKING BF

    Abstract: No abstract text available
    Text: BF 2040W Silicon N-Channel MOSFET Tetrode Target data sheet 3  For low noise, high gain controlled 4 input stages up to 1GHz  Operating voltage 5V Drain AGC HF Input G2 G1 R G1 2 HF Output + DC 1 VPS05605 GND VGG EHA07461 ESD: Electrostatic discharge sensitive device, observe handling precaution!


    Original     		PDF VPS05605 EHA07461 OT-343 Mar-15-1999 SOT 343 MARKING BF

    BF2030R

    Abstract: marking NEs
    Text: BF2030R Silicon N-Channel MOSFET Tetrode  For low noise, high gain controlled input stages up to 1GHz  Operating voltage 5V Drain AGC HF Input G2 G1 R G1 HF Output + DC GND VGG EHA07461 ESD: Electrostatic discharge sensitive device, observe handling precaution!


    Original     		PDF BF2030R EHA07461 OT143R Oct-05-2001 BF2030R marking NEs

    p 1S marking SOT143

    Abstract: BF 2040 VPS05178
    Text: BF 2040 Silicon N-Channel MOSFET Tetrode 3  For low noise, high gain controlled input stages up to 1GHz 4  Operating voltage 5V 2 Drain AGC HF Input G2 G1 R G1 HF Output + DC 1 VPS05178 GND VGG EHA07461 ESD: Electrostatic discharge sensitive device, observe handling precaution!


    Original     		PDF VPS05178 EHA07461 OT-143 Mar-15-1999 p 1S marking SOT143 BF 2040 VPS05178

    BF2040W

    Abstract: No abstract text available
    Text: BF2040W Silicon N-Channel MOSFET Tetrode 3  For low noise, high gain controlled 4 input stages up to 1GHz  Operating voltage 5V Drain AGC HF Input G2 G1 R G1 2 HF Output + DC 1 VPS05605 GND VGG EHA07461 ESD: Electrostatic discharge sensitive device, observe handling precaution!


    Original     		PDF BF2040W VPS05605 EHA07461 OT343 Oct-05-2001 BF2040W

    BF2040R

    Abstract: K1428
    Text: BF2040R Silicon N-Channel MOSFET Tetrode  For low noise, high gain controlled input stages up to 1GHz  Operating voltage 5V Drain AGC HF Input G2 G1 R G1 HF Output + DC GND VGG EHA07461 ESD: Electrostatic discharge sensitive device, observe handling precaution!


    Original     		PDF BF2040R EHA07461 OT143R Oct-05-2001 BF2040R K1428

    Untitled

    Abstract: No abstract text available
    Text: BF 2040R Silicon N-Channel MOSFET Tetrode  For low noise, high gain controlled input stages up to 1GHz  Operating voltage 5V Drain AGC HF Input G2 G1 R G1 HF Output + DC GND VGG EHA07461 ESD: Electrostatic discharge sensitive device, observe handling precaution!


    Original     		PDF 2040R EHA07461 OT-143R Feb-14-2001

    MA1022

    Abstract: No abstract text available
    Text: BF 2030W Silicon N-Channel MOSFET Tetrode Preliminary data 3  For low noise, high gain controlled 4 input stages up to 1GHz  Operating voltage 5V Drain AGC HF Input G2 G1 R G1 2 HF Output + DC 1 VPS05605 GND VGG EHA07461 ESD: Electrostatic discharge sensitive device, observe handling precaution!


    Original     		PDF VPS05605 EHA07461 OT-343 Nov-24-1999 MA1022

    BF2030

    Abstract: VPS05178 V300-28
    Text: BF2030 Silicon N-Channel MOSFET Tetrode 3  For low noise, high gain controlled input stages up to 1GHz 4  Operating voltage 5V 2 Drain AGC HF Input G2 G1 R G1 HF Output + DC 1 VPS05178 GND VGG EHA07461 ESD: Electrostatic discharge sensitive device, observe handling precaution!


    Original     		PDF BF2030 VPS05178 EHA07461 OT143 Oct-05-2001 BF2030 VPS05178 V300-28