BFP36
Abstract: No abstract text available
Text: BFP360W NPN Silicon RF Transistor 3 Preliminary data 4 Low voltage/ low current operation For low noise amplifiers For Oscillators up to 3.5 GHz and Pout > 10 dBm 2 Low noise figure: 1.0 dB at 1.8 GHz 1 VPS05605 ESD: Electrostatic discharge sensitive device, observe handling precaution!
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Original
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PDF
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BFP360W
VPS05605
OT343
1E-14
Jan-28-2003
BFP36
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BFP36
Abstract: No abstract text available
Text: BFP360W NPN Silicon RF Transistor 3 Preliminary data 4 Low voltage/ low current operation For low noise amplifiers For Oscillators up to 3.5 GHz and Pout > 10 dBm 2 Low noise figure: 1.0 dB at 1.8 GHz 1 VPS05605 ESD: Electrostatic discharge sensitive device, observe handling precaution!
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Original
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PDF
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BFP360W
VPS05605
OT343
BFP36
|
BFP36
Abstract: No abstract text available
Text: BFP360W NPN Silicon RF Transistor 3 Preliminary data 4 Low voltage/ low current operation For low noise amplifiers For Oscillators up to 3.5 GHz and Pout > 10 dBm 2 Low noise figure: 1.0 dB at 1.8 GHz 1 VPS05605 ESD: Electrostatic discharge sensitive device, observe handling precaution!
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Original
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PDF
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BFP360W
VPS05605
OT343
Aug-20-2002
BFP36
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BFP360W
Abstract: BFP36
Text: BFP360W NPN Silicon RF Transistor 3 Preliminary data 4 Low voltage/ low current operation For low noise amplifiers For Oscillators up to 3.5 GHz and Pout > 10 dBm 2 Low noise figure: 1.0 dB at 1.8 GHz 1 VPS05605 ESD: Electrostatic discharge sensitive device, observe handling precaution!
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Original
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PDF
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BFP360W
VPS05605
OT343
Jun-16-2003
BFP360W
BFP36
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