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    California Eastern Laboratories (CEL) UPC8179TB-A

    IC RF AMP GPS 100MHZ-2.4GHZ 6SO
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    California Eastern Laboratories (CEL) UPC8179TB-E3-A

    IC RF AMP GPS 100MHZ-2.4GHZ 6SO
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    California Eastern Laboratories (CEL) UPC8179TB-EV09

    Cellular Development Tools For UPC8179TB-A at 900 MHz
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    California Eastern Laboratories (CEL) UPC8179TB-EV19

    RF Development Tools For UPC8179TB-A at 1.9 GHz
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    California Eastern Laboratories (CEL) UPC8179TB-EV22

    RF Development Tools For UPC8179TB-A at 2.2 GHz
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    UPC8179TB Datasheets (10)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    UPC8179TB NEC SILICON MMIC LOW CURRENT AMPLIFIER FOR MOBILE COMMUNICATIONS Original PDF
    uPC8179TB NEC RF Amplifier, Buffer amplifier, Single channel, Chip, 1900 MHz, SOT-363, 6-Pin Original PDF
    UPC8179TB-A California Eastern Laboratories RF Amplifiers, RF/IF and RFID, IC AMPLIFIER LOW CURRENT SOT363 Original PDF
    UPC8179TB-E3 NEC SILICON MMIC LOW CURRENT AMPLIFIER FOR MOBILE COMMUNICATIONS Original PDF
    uPC8179TB-E3 NEC Silicon Mmic Low Current Amplifier for Mobile Communications Original PDF
    UPC8179TB-E3-A California Eastern Laboratories SILICON RFIC LOW CURRENT AMPLIFIER FOR MOBILE COMMUNICATIONS Original PDF
    UPC8179TB-EV09 California Eastern Laboratories RF Evaluation and Development Kits, Boards, RF/IF and RFID, EVAL BOARD UPC8179TB 900MHZ Original PDF
    UPC8179TB-EV19 California Eastern Laboratories RF Evaluation and Development Kits, Boards, RF/IF and RFID, EVAL BOARD FOR UPC8179TB 1.9GHZ Original PDF
    UPC8179TB-EV22 California Eastern Laboratories RF Evaluation and Development Kits, Boards, RF/IF and RFID, EVAL BOARD FOR UPC8179TB 2.2GHZ Original PDF
    UPC8179TB-EV24 California Eastern Laboratories RF Evaluation and Development Kits, Boards, RF/IF and RFID, EVAL BOARD FOR UPC8179TB 2.4GHZ Original PDF

    UPC8179TB Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: SILICON RFIC LOW CURRENT AMPLIFIER UPC8179TB FOR MOBILE COMMUNICATIONS FEATURES POWER GAIN vs. FREQUENCY • HIGH DENSITY SURFACE MOUNTING: 6 Pin Super Minimold Package 2.0 x 1.25 x 0.9 mm +20 VCC = 3.0 V • SUPPLY VOLTAGE: VCC = 2.4 to 3.3 V 2.4 GHz TA = -40°C


    Original     		PDF UPC8179TB UPC8179TB-E3 24-Hour

    Untitled

    Abstract: No abstract text available
    Text: SILICON RFIC LOW CURRENT AMPLIFIER UPC8179TB FOR MOBILE COMMUNICATIONS FEATURES POWER GAIN vs. FREQUENCY • HIGH DENSITY SURFACE MOUNTING: 6 Pin Super Minimold Package 2.0 x 1.25 x 0.9 mm +20 VCC = 3.0 V • SUPPLY VOLTAGE: VCC = 2.4 to 3.3 V 2.4 GHz TA = -40°C


    Original     		PDF UPC8179TB

    UPC8179TB

    Abstract: UPC8179TB-E3-A
    Text: SILICON RFIC LOW CURRENT AMPLIFIER UPC8179TB FOR MOBILE COMMUNICATIONS FEATURES POWER GAIN vs. FREQUENCY • HIGH DENSITY SURFACE MOUNTING: 6 Pin Super Minimold Package 2.0 x 1.25 x 0.9 mm +20 VCC = 3.0 V • SUPPLY VOLTAGE: VCC = 2.4 to 3.3 V 2.4 GHz TA = -40°C


    Original     		PDF UPC8179TB UPC8179TB UPC8179TB-E3-A

    mobile phone basic block diagram

    Abstract: PG2158T5K 2SC3357/NE85634 microwave Duplexer NE5510279A UPC8236 NE3517S03 UPG2156 NE662M04 SW SPDT
    Text: RF AND MICROWAVE DEVICES SELECTION GUIDE − APPLICATION SYSTEM − October 2009 This document covers “Silicon Microwave Transistors”, “Silicon Microwave Monolithic ICs” and “Microwave GaAs Devices”. Caution GaAs Products This product uses gallium arsenide GaAs .


    Original     		PDF G0706 PX10020EJ41V0PF mobile phone basic block diagram PG2158T5K 2SC3357/NE85634 microwave Duplexer NE5510279A UPC8236 NE3517S03 UPG2156 NE662M04 SW SPDT

    top marking c3

    Abstract: No abstract text available
    Text: SILICON RFIC LOW CURRENT AMPLIFIER FOR MOBILE COMMUNICATIONS FEATURES UPC8178TB POWER GAIN vs. FREQUENCY ¥ LOW CURRENT CONSUMPTION ICC = 1.9 mA TYP @ VCC = 3.0 V +20 VCC = 3.0 V 2.4 GHz 1.0 GHz • SUPPLY VOLTAGE: VCC = 2.4 to 3.3 V +10 TA = -40¡C TA = +25¡C


    Original     		PDF UPC8178TB POWE15 UPC8178TB-E3 24-Hour top marking c3

    FET marking code g5d

    Abstract: PG2179TB marking code C3E SOT-89 marking code C1E mmic marking code C1G mmic 2SC3357/NE85634 PG2163T5N sot-23 g6g PC8230TU marking code C1H mmic
    Text: RF AND MICROWAVE DEVICES PRODUCT LINEUP www.renesas.com 2010.07 This document covers “Silicon Microwave Transistors”, “Silicon Microwave Monolithic ICs” and “Microwave GaAs Devices”. Caution GaAs Products This product uses gallium arsenide GaAs .


    Original     		PDF R09CL0001EJ0100 PX10727EJ02V0PF) FET marking code g5d PG2179TB marking code C3E SOT-89 marking code C1E mmic marking code C1G mmic 2SC3357/NE85634 PG2163T5N sot-23 g6g PC8230TU marking code C1H mmic

    nec mosfet marked v75

    Abstract: NEC Ga FET marking code T79 FET marking code g5d marking code C1G mmic LGA 1155 PIN diagram PB1507 marking code C1E mmic marking code C1H mmic PC8230TU MMIC SOT 363 marking CODE 77
    Text: お客様各位 カタログ等資料中の旧社名の扱いについて 2010 年 4 月 1 日を以って NEC エレクトロニクス株式会社及び株式会社ルネサステクノロジ が合併し両社の全ての事業が当社に承継されております。従いまして、本資料中には旧社


    Original     		PDF G0706 PX10727EJ02V0PF nec mosfet marked v75 NEC Ga FET marking code T79 FET marking code g5d marking code C1G mmic LGA 1155 PIN diagram PB1507 marking code C1E mmic marking code C1H mmic PC8230TU MMIC SOT 363 marking CODE 77

    2SK2500

    Abstract: 2SK1543 UPD16861GS NEC 2SK2500 upa1559h transistor NEC 2SK2500 2sc4496a mc10087f1 2SA733A UPD16861
    Text: NEC Electronics Corporation Product Information for China RoHS Semiconductor Devices 1/708 Feb. 24, 2010 NEC Electronics discloses information on contained substances subject to regulation of its semiconductor devices, evaluation boards, and development tools. NEC Electronics understands that customers are required to disclose


    Original     		PDF

    FSQ510 Equivalent

    Abstract: BTA12 6008 bta16 6008 ZIGBEE interface with AVR ATmega16 Precision triac control thermostat thyristor t 558 f eupec gw 5819 diode transistor a564 A564 transistor BSM25GP120 b2
    Text: SEMICONDUCTORS MCU/MPU/DSP Atmel. . . . . . . . . 167, 168, 169, 170, 171, 172 Blackhawk. . . . . . . . . . . . . . . . . . . . . . . . . 173 Cyan . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 174 Cypress. . . . . . . . . . . . . . . 175, 176, 177, 178


    Original     		PDF GP-20) FSQ510 Equivalent BTA12 6008 bta16 6008 ZIGBEE interface with AVR ATmega16 Precision triac control thermostat thyristor t 558 f eupec gw 5819 diode transistor a564 A564 transistor BSM25GP120 b2

    ne3511s02 s2p

    Abstract: ne3512s02 s2p SMD M05 sot SMD transistor M05 S06 SMD UPG2162T5N ne3210s01 NE321000 QFN2020 UPG2250T5N
    Text: 2007 California Eastern Laboratories HEADQUARTERS U.S. REPS INTERNATIONAL REPS CEL 4590 Patrick Henry Drive Santa Clara CA 95054 Tel: 408 919-2500 Fax: (408) 988-0279 www.cel.com Northwest Disman Bakner (800) 347-3010 Canada BC, Alberta, Saskatchewan


    Original     		PDF 07/2M 847Indiana/Kentucky ne3511s02 s2p ne3512s02 s2p SMD M05 sot SMD transistor M05 S06 SMD UPG2162T5N ne3210s01 NE321000 QFN2020 UPG2250T5N

    nec b1007

    Abstract: T79 code marking C3206 marking s16 marking code C1H qfn marking t88 C3H marking NE02107 T79 marking C3206G
    Text: California Eastern Laboratories Package Dimensions PART NUMBER DESCRIPTION NE68018 NEC part numbers are specified by die and package number. NE680 Die "18" Package PACKAGE MARKINGS NEC devices are marked with various indications which indicate part type, lot code year and month . Due to size constraints,


    Original     		PDF NE68018 NE680 UPA801TC UPA808TC UPA821TC UPA826TC UPA861TD UPA831TC UPA862TD UPA835TC nec b1007 T79 code marking C3206 marking s16 marking code C1H qfn marking t88 C3H marking NE02107 T79 marking C3206G

    tk 1838

    Abstract: h028 IC 7464 circuit 7492 IC CHIP UPC8128TB UPC8151TB UPC8152TB UPC8178TB UPC8178TK UPC8179TB
    Text: SILICON MMIC LOW CURRENT AMPLIFIER UPC8179TK FOR MOBILE COMMUNICATIONS FEATURES OUTLINE DIMENSIONS Units in mm • HIGH DENSITY SURFACE MOUNTING: 6 Pin Leadless Minimold Package (1.5 x 1.1 x 0.55 mm) PACKAGE OUTLINE TK • SUPPLY VOLTAGE: VCC = 2.4 to 3.3 V


    Original     		PDF UPC8179TK UPC8179TK-E3 tk 1838 h028 IC 7464 circuit 7492 IC CHIP UPC8128TB UPC8151TB UPC8152TB UPC8178TB UPC8178TK UPC8179TB

    az 10840

    Abstract: tk 1838 UPC8179TK UPC8128TB UPC8151TB UPC8152TB UPC8178TB UPC8178TK UPC8179TB UPC8179TK-E2-A
    Text: NEC's SILICON MMIC LOW CURRENT AMPLIFIER UPC8179TK FOR MOBILE COMMUNICATIONS FEATURES OUTLINE DIMENSIONS Units in mm PACKAGE OUTLINE TK • HIGH DENSITY SURFACE MOUNTING: 6 Pin Leadless Minimold Package (1.5 x 1.1 x 0.55 mm) 1.3 ± 0.05 • SUPPLY VOLTAGE:


    Original     		PDF UPC8179TK az 10840 tk 1838 UPC8179TK UPC8128TB UPC8151TB UPC8152TB UPC8178TB UPC8178TK UPC8179TB UPC8179TK-E2-A

    marking code C1E SMD Transistor

    Abstract: TRANSISTOR SMD MARKING CODE s01 FMCW Radar transistor smd c1y NE92039 g2b 6-pin smd NE582M03 NE3210SO1 smd transistor g1-L smd code marking NEC 817
    Text: RF & Microwave Device Overview 2003 NEC Electronics Europe GmbH Oberrather Str. 4 40472 Düsseldorf, Germany Tel. (02 11) 65 03 01 Fax (02 11) 65 03-3 27 - Podbielskistr. 164 30177 Hannover, Germany Tel. (05 11) 3 34 02-0 Fax (05 11) 3 34 02-34 - Arabellastr. 17


    Original     		PDF P14740EE5V0PF00 marking code C1E SMD Transistor TRANSISTOR SMD MARKING CODE s01 FMCW Radar transistor smd c1y NE92039 g2b 6-pin smd NE582M03 NE3210SO1 smd transistor g1-L smd code marking NEC 817

    26 sot-363 rf power amplifier

    Abstract: UPC3232TB upc8211 UPC3223TB QFN2020 uPC2710 s06 A UPC1678GV UPC2745TB UPC2747TB
    Text: NEC Silicon RFIC Amplifiers – Low Power, Wideband & SiGe/SiGeC Low Power Amplifiers Part Number Typical ELECTRICAL CHARACTERISTICS1 TA = 25°C Frequency Range VCC ICC NF Gain RLIN RLOUT P1dB ISOL @ 3dB (V) (mA) (dB) (dB) (dB) (dB) (dBm) (dB) down Package


    Original     		PDF UPC2745TB OT-363 UPC2746TB UPC2747TB UPC2748TB IIP32 UPC8190K DC-10 UPC8194K 26 sot-363 rf power amplifier UPC3232TB upc8211 UPC3223TB QFN2020 uPC2710 s06 A UPC1678GV

    SMD transistor M05

    Abstract: smd TRANSISTOR code m05 wy smd transistor UPD5740 NE66200 TRANSISTOR m05 smd UPD5740T6N UPG2159T6R SMD transistor M05 driver 50 VOLTS 5 amp smd sot-89 TRANSISTOR
    Text: NEC XXXXXXXXXX RF & Wireless Semiconductors 2010 2 P R O D U C T S b y A P P L I C AT I O N California Eastern Laboratories serves designers, OEMs and contract manufacturers in the RF & Wireless, Mobilecomm, Multimedia, Broadband Communications, Industrial Control, and Automated Test Equipment ATE


    Original     		PDF 10/2M SMD transistor M05 smd TRANSISTOR code m05 wy smd transistor UPD5740 NE66200 TRANSISTOR m05 smd UPD5740T6N UPG2159T6R SMD transistor M05 driver 50 VOLTS 5 amp smd sot-89 TRANSISTOR

    mc10087f1

    Abstract: mc-10041 mc-10043 MC-10087F1-XXX MC-10044 MC-10051BF1 2SC5664 2SC5292 UPC1701C mc-10059
    Text: 1／89 Lead-free Semiconductor Product Conditions Renesas Electronics Lead-free Semiconductor Product Conditions August 17, 2010 1.Please inquire of Renesas Electronics sales person about lead-free product status while is not listed in the following table.


    Original     		PDF IR260/WS260/HS350 IR260/HS350 mc10087f1 mc-10041 mc-10043 MC-10087F1-XXX MC-10044 MC-10051BF1 2SC5664 2SC5292 UPC1701C mc-10059

    UPC8128TB

    Abstract: UPC8151TB UPC8152TB UPC8178TB UPC8178TB-E3-A UPC8179TB
    Text: SILICON RFIC LOW CURRENT AMPLIFIER FOR MOBILE COMMUNICATIONS FEATURES UPC8178TB POWER GAIN vs. FREQUENCY • LOW CURRENT CONSUMPTION ICC = 1.9 mA TYP @ VCC = 3.0 V +20 VCC = 3.0 V 2.4 GHz 1.0 GHz • SUPPLY VOLTAGE: VCC = 2.4 to 3.3 V +10 TA = -40°C TA = +25°C


    Original     		PDF UPC8178TB UPC8128TB UPC8151TB UPC8152TB UPC8178TB UPC8178TB-E3-A UPC8179TB

    UPC8236

    Abstract: 2SC5508 NE3512S02 digital tv tuner hjfet NESG240033 SW SPDT NE5510279A antenna for microwave CATV materials ANTENNA parabolic
    Text: RF AND MICROWAVE DEVICES SELECTION GUIDE − APPLICATION SYSTEM − April 2009 This document covers “Silicon Microwave Transistors”, “Silicon Microwave Monolithic ICs” and “Microwave GaAs Devices”. Caution GaAs Products This product uses gallium arsenide GaAs .


    Original     		PDF G0706 PX10020EJ39V0PF UPC8236 2SC5508 NE3512S02 digital tv tuner hjfet NESG240033 SW SPDT NE5510279A antenna for microwave CATV materials ANTENNA parabolic

    SMD M05 sot

    Abstract: NESG303100G SMD transistor M05 transistor NEC D 882 p m33 tf 130 H02 SOT-363 SMD M05 sot23 UPC8236 T6N 700 NE68000 s-parameters
    Text: NEC XXXXXXXXXX NEC RF & Wireless Semiconductors 2008 NEC CEL & NEC CONTENTS California Eastern Laboratories serves designers, OEMs GaAs RFIC Switches 3 and contract manufacturers in the RF & Wireless, Mobile- Small Signal GaAs FETs 4 comm, Multimedia, Broadband Communications, Industrial


    Original     		PDF 08/2M SMD M05 sot NESG303100G SMD transistor M05 transistor NEC D 882 p m33 tf 130 H02 SOT-363 SMD M05 sot23 UPC8236 T6N 700 NE68000 s-parameters

    UPC8236

    Abstract: 2SC5508 2SC3357/NE85634 CATV MODULATOR NE5510279A upg2406t6r Microwave GaAs FET catalogue NE3515S02 NE662M04 NE3514S02
    Text: RF AND MICROWAVE DEVICES SYSTEM BLOCK DIAGRAMS www.renesas.com 2010.04 CONTENTS 1. INTRODUCTION . 3 1-1. Basic RF Blocks . 4


    Original     		PDF R09CA0001EJ0100 PX10020EJ42V0PF UPC8236 2SC5508 2SC3357/NE85634 CATV MODULATOR NE5510279A upg2406t6r Microwave GaAs FET catalogue NE3515S02 NE662M04 NE3514S02

    PA90U

    Abstract: buffer amplifier ghz UPC8128TB UPC8151TB UPC8152TB UPC8178TB UPC8178TB-E3 UPC8179TB 2.4 GHz buffer amplifier top marking c3
    Text: SILICON RFIC LOW CURRENT AMPLIFIER FOR MOBILE COMMUNICATIONS FEATURES UPC8178TB POWER GAIN vs. FREQUENCY • LOW CURRENT CONSUMPTION ICC = 1.9 mA TYP @ VCC = 3.0 V +20 VCC = 3.0 V 2.4 GHz 1.0 GHz • SUPPLY VOLTAGE: VCC = 2.4 to 3.3 V +10 TA = -40°C TA = +25°C


    Original     		PDF UPC8178TB UPC8178TB-E3 PA90U buffer amplifier ghz UPC8128TB UPC8151TB UPC8152TB UPC8178TB UPC8178TB-E3 UPC8179TB 2.4 GHz buffer amplifier top marking c3

    2SC5508

    Abstract: UPC3243 UPC8236 NE3509 NE3517S03 transistor 20107 800 Mhz Cordless Phone circuit diagram NESG270034 2SC4226 APPLICATION NOTES NE5510279A
    Text: RF AND MICROWAVE DEVICES SYSTEM BLOCK DIAGRAMS www.renesas.com 2010.10 CONTENTS 1. INTRODUCTION . 3 1-1. Basic RF Blocks . 4


    Original     		PDF R09CA0001EJ0300 2SC5508 UPC3243 UPC8236 NE3509 NE3517S03 transistor 20107 800 Mhz Cordless Phone circuit diagram NESG270034 2SC4226 APPLICATION NOTES NE5510279A