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    UPA808T Price and Stock

    California Eastern Laboratories (CEL) UPA808T-T1-A

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Bristol Electronics UPA808T-T1-A 36,000 7
    • 1 -
    • 10 $0.75
    • 100 $0.375
    • 1000 $0.15
    • 10000 $0.1013
    		Buy Now
    Quest Components UPA808T-T1-A 28,800
    • 1 $1
    • 10 $1
    • 100 $1
    • 1000 $1
    • 10000 $0.125
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    NEC Electronics Group UPA808TC-T1

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Bristol Electronics UPA808TC-T1 21,000 7
    • 1 -
    • 10 $0.75
    • 100 $0.375
    • 1000 $0.15
    • 10000 $0.1013
    		Buy Now
    Quest Components UPA808TC-T1 16,800
    • 1 $1
    • 10 $1
    • 100 $1
    • 1000 $1
    • 10000 $0.125
    		Buy Now

    NEC Electronics Group UPA808T-T1

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Bristol Electronics UPA808T-T1 2,745 7
    • 1 -
    • 10 $0.75
    • 100 $0.375
    • 1000 $0.15
    • 10000 $0.1125
    		Buy Now
    Quest Components UPA808T-T1 2,196
    • 1 $1
    • 10 $1
    • 100 $1
    • 1000 $0.2
    • 10000 $0.15
    		Buy Now

    UPA808T Datasheets (14)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    UPA808T California Eastern Laboratories NPN SILICON HIGH FREQUENCY TRANSISTOR Original PDF
    UPA808T Unknown SMD, High Frequency Amplifier, 5V 30mA 90mW, Silicon NPN Transistor (integrated circuit) Original PDF
    UPA808T NEC MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 ELEMENTS SUPER MINI MOLD Original PDF
    uPA808T NEC MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR (WITH BUILT-IN 2 ELEMENTS) SUPER MINI Original PDF
    UPA808TC NEC NPN silicon high frequency transistor. Original PDF
    UPA808TC NEC 6-pin small MM high-frequency double transistor Original PDF
    uPA808TC NEC NPN SILICON RF TRANSISTOR (WITH 2 ELEMENTS) IN A FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD Original PDF
    UPA808TC-T1 NEC 6-pin small MM high-frequency double transistor Original PDF
    uPA808TC-T1 NEC NPN SILICON RF TRANSISTOR (WITH 2 ELEMENTS) IN A FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD Original PDF
    uPA808TKB NEC Microwave Low Noise Amplifier NPN Silicon Epitaxial Transistor (with Built-in 2 Elements) Super Mini Mold Original PDF
    uPA808TKB-T1 NEC Microwave Low Noise Amplifier NPN Silicon Epitaxial Transistor (with Built-in 2 Elements) Super Mini Mold Original PDF
    UPA808T-T1 NEC MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 ELEMENTS SUPER MINI MOLD Original PDF
    uPA808T-T1 NEC MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR (WITH BUILT-IN 2 ELEMENTS) SUPER MINI Original PDF
    UPA808T-T1-A California Eastern Laboratories NPN SILICON HIGH FREQUENCY TRANSISTOR Original PDF

    UPA808T Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    UA709

    Abstract: No abstract text available
    Text: PRELIMINARY DATA SHEET NPN SILICON HIGH FREQUENCY TRANSISTOR UPA808TC FEATURES DESCRIPTION • SMALL PACKAGE OUTLINE: 1.5 mm x 1.1 mm, 33% smaller than conventional SOT-363 package • LOW HEIGHT PROFILE Just 0.55 mm high • FLAT LEAD STYLE: Reduced lead inductance improves electrical


    Original     		PDF OT-363 UPA808TC UPA808TC NE687 UPA808TC-T1, 24-Hour UA709

    TRANSISTOR C 6090

    Abstract: TRANSISTOR C 6090 npn transistor pt 6020 NE687 S21E UPA808T UPA808T-T1 UPA808T-T1-A ic 4790 A 7440 pin transistor
    Text: NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES UPA808T OUTLINE DIMENSIONS Units in mm • SMALL PACKAGE STYLE: 2 NE687 Die in a 2 mm x 1.25 mm package • LOW NOISE FIGURE: NF = 1.3 dB TYP at 2 GHz • HIGH GAIN: |S21E|2 = 8.5 dB TYP at 2 GHz • LOW CURRENT OPERATION


    Original     		PDF UPA808T NE687 UPA808T TRANSISTOR C 6090 TRANSISTOR C 6090 npn transistor pt 6020 S21E UPA808T-T1 UPA808T-T1-A ic 4790 A 7440 pin transistor

    TRANSISTOR C 6090

    Abstract: TRANSISTOR C 6090 npn NE687 S21E UPA808T UPA808T-T1 7440 pin transistor lb 7610
    Text: NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES UPA808T OUTLINE DIMENSIONS Units in mm • SMALL PACKAGE STYLE: 2 NE687 Die in a 2 mm x 1.25 mm package • LOW NOISE FIGURE: NF = 1.3 dB TYP at 2 GHz • HIGH GAIN: |S21E|2 = 8.5 dB TYP at 2 GHz • LOW CURRENT OPERATION


    Original     		PDF UPA808T NE687 UPA808T 24-Hour TRANSISTOR C 6090 TRANSISTOR C 6090 npn S21E UPA808T-T1 7440 pin transistor lb 7610

    NE687

    Abstract: S21E UPA808TC UPA808TC-T1 019PF
    Text: PRELIMINARY DATA SHEET NPN SILICON HIGH FREQUENCY TRANSISTOR UPA808TC FEATURES DESCRIPTION • SMALL PACKAGE OUTLINE: 1.5 mm x 1.1 mm, 33% smaller than conventional SOT-363 package • LOW HEIGHT PROFILE Just 0.55 mm high • FLAT LEAD STYLE: Reduced lead inductance improves electrical


    Original     		PDF UPA808TC OT-363 UPA808TC NE687 S21E UPA808TC-T1 019PF

    NE687

    Abstract: S21E UPA808T UPA808T-T1 2 F transistor
    Text: PRELIMINARY DATA SHEET NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES UPA808T OUTLINE DIMENSIONS Units in mm • SMALL PACKAGE STYLE: 2 NE687 Die in a 2 mm x 1.25 mm package • LOW NOISE FIGURE: NF = 1.3 dB TYP at 2 GHz • HIGH GAIN: |S21E|2 = 8.5 dB TYP at 2 GHz


    Original     		PDF UPA808T NE687 UPA808T UPA808T-T1, 24-Hour S21E UPA808T-T1 2 F transistor

    TRANSISTOR C 6090

    Abstract: transistor pt 6020 TRANSISTOR C 6090 npn Transistor 17567 transistor 5910 transistor 9740 Bf 148 TRANSISTOR 13270 transistor
    Text: SILICON TRANSISTOR UPA808T NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES • • • • SMALL PACKAGE STYLE: 2 NE687 Die in a 2 mm x 1.25 mm package OUTLINE DIMENSIONS Units in mm PACKAGE OUTLINE S06 (Top View) LOW NOISE FIGURE: NF = 1.3 dB TYP at 2 GHz


    Original     		PDF UPA808T NE687 UPA808T 24-Hour TRANSISTOR C 6090 transistor pt 6020 TRANSISTOR C 6090 npn Transistor 17567 transistor 5910 transistor 9740 Bf 148 TRANSISTOR 13270 transistor

    cascode transistor array VCO

    Abstract: UPA807T RF transistors with s-parameters UPA802T cascode transistor array AN1028 S21E UPA806T UPA808T transistor RF S-parameters
    Text: California Eastern Laboratories APPLICATION NOTE AN1028 Testing Dual-Chip Transistor Arrays for VCO/Buffer Amp Combinations and Two-Stage Amplifier Applications I. Introduction Designers of handheld wireless products share common goals: higher performance, smaller size, and lower costs. Usually


    Original     		PDF AN1028 UPA808T cascode transistor array VCO UPA807T RF transistors with s-parameters UPA802T cascode transistor array AN1028 S21E UPA806T transistor RF S-parameters

    FET marking code g5d

    Abstract: PG2179TB marking code C3E SOT-89 marking code C1E mmic marking code C1G mmic 2SC3357/NE85634 PG2163T5N sot-23 g6g PC8230TU marking code C1H mmic
    Text: RF AND MICROWAVE DEVICES PRODUCT LINEUP www.renesas.com 2010.07 This document covers “Silicon Microwave Transistors”, “Silicon Microwave Monolithic ICs” and “Microwave GaAs Devices”. Caution GaAs Products This product uses gallium arsenide GaAs .


    Original     		PDF R09CL0001EJ0100 PX10727EJ02V0PF) FET marking code g5d PG2179TB marking code C3E SOT-89 marking code C1E mmic marking code C1G mmic 2SC3357/NE85634 PG2163T5N sot-23 g6g PC8230TU marking code C1H mmic

    nec mosfet marked v75

    Abstract: NEC Ga FET marking code T79 FET marking code g5d marking code C1G mmic LGA 1155 PIN diagram PB1507 marking code C1E mmic marking code C1H mmic PC8230TU MMIC SOT 363 marking CODE 77
    Text: お客様各位 カタログ等資料中の旧社名の扱いについて 2010 年 4 月 1 日を以って NEC エレクトロニクス株式会社及び株式会社ルネサステクノロジ が合併し両社の全ての事業が当社に承継されております。従いまして、本資料中には旧社


    Original     		PDF G0706 PX10727EJ02V0PF nec mosfet marked v75 NEC Ga FET marking code T79 FET marking code g5d marking code C1G mmic LGA 1155 PIN diagram PB1507 marking code C1E mmic marking code C1H mmic PC8230TU MMIC SOT 363 marking CODE 77

    2SK2500

    Abstract: 2SK1543 UPD16861GS NEC 2SK2500 upa1559h transistor NEC 2SK2500 2sc4496a mc10087f1 2SA733A UPD16861
    Text: NEC Electronics Corporation Product Information for China RoHS Semiconductor Devices 1/708 Feb. 24, 2010 NEC Electronics discloses information on contained substances subject to regulation of its semiconductor devices, evaluation boards, and development tools. NEC Electronics understands that customers are required to disclose


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text: NONLINEAR MODEL BJT NONLINEAR MODEL PARAMETERS 1 Parameters Q1, Q2 Parameters Q1, Q2 IS 8e-17 MJC 0.53 0.27 BF 128 XCJC NF 1 CJS VAF 17 VJS 0.75 IKF 0.18 MJS ISE 3.3e-15 FC 0.37 NE 1.48 TF 6e-12 BR 9.05 XTF 11.9 NR 1.05 VTF 9.55 VAR 4.3 ITF 1.78 IKR 0.009


    Original     		PDF UPA808T 8e-17 3e-15 4e-15 415e-12 102e-12 6e-12 24-Hour

    ne3511s02 s2p

    Abstract: ne3512s02 s2p SMD M05 sot SMD transistor M05 S06 SMD UPG2162T5N ne3210s01 NE321000 QFN2020 UPG2250T5N
    Text: 2007 California Eastern Laboratories HEADQUARTERS U.S. REPS INTERNATIONAL REPS CEL 4590 Patrick Henry Drive Santa Clara CA 95054 Tel: 408 919-2500 Fax: (408) 988-0279 www.cel.com Northwest Disman Bakner (800) 347-3010 Canada BC, Alberta, Saskatchewan


    Original     		PDF 07/2M 847Indiana/Kentucky ne3511s02 s2p ne3512s02 s2p SMD M05 sot SMD transistor M05 S06 SMD UPG2162T5N ne3210s01 NE321000 QFN2020 UPG2250T5N

    C5184

    Abstract: 2SC5184
    Text: お客様各位 カタログ等資料中の旧社名の扱いについて 2010 年 4 月 1 日を以って NEC エレクトロニクス株式会社及び株式会社ルネサステクノロジ が合併し両社の全ての事業が当社に承継されております。従いまして、本資料中には旧社


    Original     		PDF PA808T PA808T-T1 C5184 2SC5184

    nec b1007

    Abstract: T79 code marking C3206 marking s16 marking code C1H qfn marking t88 C3H marking NE02107 T79 marking C3206G
    Text: California Eastern Laboratories Package Dimensions PART NUMBER DESCRIPTION NE68018 NEC part numbers are specified by die and package number. NE680 Die "18" Package PACKAGE MARKINGS NEC devices are marked with various indications which indicate part type, lot code year and month . Due to size constraints,


    Original     		PDF NE68018 NE680 UPA801TC UPA808TC UPA821TC UPA826TC UPA861TD UPA831TC UPA862TD UPA835TC nec b1007 T79 code marking C3206 marking s16 marking code C1H qfn marking t88 C3H marking NE02107 T79 marking C3206G

    SMD transistor M05

    Abstract: smd TRANSISTOR code m05 wy smd transistor UPD5740 NE66200 TRANSISTOR m05 smd UPD5740T6N UPG2159T6R SMD transistor M05 driver 50 VOLTS 5 amp smd sot-89 TRANSISTOR
    Text: NEC XXXXXXXXXX RF & Wireless Semiconductors 2010 2 P R O D U C T S b y A P P L I C AT I O N California Eastern Laboratories serves designers, OEMs and contract manufacturers in the RF & Wireless, Mobilecomm, Multimedia, Broadband Communications, Industrial Control, and Automated Test Equipment ATE


    Original     		PDF 10/2M SMD transistor M05 smd TRANSISTOR code m05 wy smd transistor UPD5740 NE66200 TRANSISTOR m05 smd UPD5740T6N UPG2159T6R SMD transistor M05 driver 50 VOLTS 5 amp smd sot-89 TRANSISTOR

    BB 509 varicap diode

    Abstract: BLF6G22L ON503 tea6849 bf1107 spice model PIN diode ADS model ULTRA FAST DIODES SANYO catalog RF MANUAL diode varicap BB 112 adi cmos bipolar SiGe
    Text: UNLEASH RF RF Manual 17 edition th Application and design manual for High Performance RF products June 2013 NXP enables you to unleash the performance of next-generation RF and microwave designs NXP's RF Manual is one of the most important reference tools on the market for today’s


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text: NONLINEAR MODEL BJT NONLINEAR MODEL PARAMETERS 1 Parameters Q1, Q2 Parameters Q1, Q2 IS 8e-17 MJC 0.53 1 BF 128 XCJC NF 1 CJS VAF 17 VJS 0.75 IKF 0.18 MJS ISE 3.3e-15 FC 0.37 NE 1.48 TF 8e-12 BR 9.05 XTF 11.9 NR 1.05 VTF 9.55 VAR 4.3 ITF 1.78 IKR 0.009 PTF


    Original     		PDF UPA808TC 8e-17 3e-15 4e-15 415e-12 102e-12 8e-12

    mc10087f1

    Abstract: mc-10041 mc-10043 MC-10087F1-XXX MC-10044 MC-10051BF1 2SC5664 2SC5292 UPC1701C mc-10059
    Text: 1／89 Lead-free Semiconductor Product Conditions Renesas Electronics Lead-free Semiconductor Product Conditions August 17, 2010 1.Please inquire of Renesas Electronics sales person about lead-free product status while is not listed in the following table.


    Original     		PDF IR260/WS260/HS350 IR260/HS350 mc10087f1 mc-10041 mc-10043 MC-10087F1-XXX MC-10044 MC-10051BF1 2SC5664 2SC5292 UPC1701C mc-10059

    Untitled

    Abstract: No abstract text available
    Text: NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES UPA808T OUTLINE DIMENSIONS Units in mm SMALL PACKAGE STYLE: PACKAGE OUTLINE S06 (Top View) 2 NE687 Die in a 2 mm x 1.25 mm package LOW NOISE FIGURE: NF = 1.3 dB TYP at 2 GHz HIGH GAIN: IS21 EI2 = 8.5 dB TYP at 2 GHz


    OCR Scan     		PDF NE687 UPA808T UPA808T UPA808T-T1

    cd 0765 rt

    Abstract: IC 7440 SG 5010 08/bup 3110 transistor
    Text: NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES UPA808T OUTLINE DIMENSIONS Units SMALLPACKAGE STYLE: PACKAGE OUTLINE S06 (Top View 2 NE687 Die in a 2 mm x 1.25 mm package LOW NOISE FIGURE: NF = 1.3 dB TYP at 2 GHz 2.1 ± 0.1 HIGH GAIN: -1.25 ± 0.1 - * j


    OCR Scan     		PDF NE687 UPA808T UPA808T 24-Hour cd 0765 rt IC 7440 SG 5010 08/bup 3110 transistor

    UA808

    Abstract: MPA80 ic nec 1185 pin configuration LT 5238
    Text: DATA SHEET SILICON TRANSISTOR UPA808T MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 ELEMENTS SUPER MINI MOLD PACKAGE DRAWINGS FEATURES • (Unit: mm) Low Noise NF = 1.3 dB TYP. @V ce = 2 V, le = 3 mA, f = 2 GHz 2 .1± 0.1


    OCR Scan     		PDF UPA808T 2SC5184) PA808T uPA808T-T1 UA808 MPA80 ic nec 1185 pin configuration LT 5238

    UPA827TF

    Abstract: UPA833TF NE685 UPA814T
    Text: Surface Mount Bipolar Transistors for Low Current, Low Voltage Applications gu ai VCE V 6 PIN SUPER MINI MOLD I Ic (mA) 1 1 Hk H (V) Ic (mA) TYP (dB) VCE : to . ’• » J ■ ■UHU '* m - w -"V. m SOT-363 STYLE NE696M01 2.0 2 1 1.9 9.5 2 1 13 9 NE698M01


    OCR Scan     		PDF NE696M01 NE698M01 NE699M01 UPA806T UPA807T UPA808T UPA809T UPA814T NE685 NE686 UPA827TF UPA833TF

    UPA802T

    Abstract: BD304 NE02132
    Text: Low Noise Bipolar Transistors ' •TV#’ VCE V S x n l* Ic TYP (mA) (dB) * VIP Hn te TYP MAX (WAJ Package Pfcg. Faxon Dwnand ücloaning Dee No. DUAL BIPOLAR TRANSISTORS UPA800T 2.0 3 5 1.9 - 3 .5 7.5 8.0 120 35 (SOT-363) S06 D MEVO UPA801T 2.0 3 7 1.2 -


    OCR Scan     		PDF UPA800T UPA801T UPA802T UPA806T UPA807T UPA808T UPA809T UPA810T OT-363) BD304 NE02132

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET SILICON TRANSISTOR ¿¿PA808T MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 ELEMENTS SUPER MINI MOLD PACKAGE DRAWINGS FEATURES • (Unit: mm) Low Noise NF = 1.3 dB TYP. @ V ce = 2 V, Ic = 3 mA, f = 2 GHz 2 . 1± 0.1_


    OCR Scan     		PDF PA808T 2SC5184) uPA808T-T1 uPA808T