UN1213
Abstract: UNR1213 XP01213 XP1213
Text: Composite Transistors XP01213 XP1213 Silicon NPN epitaxial planer transistor Unit: mm 0.2±0.05 For switching/digital circuits 2.1±0.1 1 2 1.25±0.1 0.425 5 3 4 +0.05 0.9± 0.1 UNR1213(UN1213) x 2 elements 0 to 0.1 ● 0.7±0.1 • Basic Part Number of Element
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XP01213
XP1213)
UNR1213
UN1213)
UN1213
XP01213
XP1213
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analog switching ic
Abstract: 2SK1103 UN1213 UNR1213 XN08081 XN8081
Text: Composite Transistors XN08081 XN8081 Silicon N-channel junction (FET) Silicon NPN epitaxial planer transistor (Tr) Unit: mm 2.90+0.20 –0.05 1.9±0.1 (0.95) (0.95) 3 2 1 0.30+0.10 –0.05 0.50+0.10 –0.05 • Basic Part Number of Element • 2SK1103 + UNR1213 (UN1213)
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XN08081
XN8081)
2SK1103
UNR1213
UN1213)
analog switching ic
2SK1103
UN1213
UNR1213
XN08081
XN8081
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UN1213
Abstract: UNR1213 XP04213 XP4213
Text: Composite Transistors XP04213 XP4213 Silicon NPN epitaxial planer transistor Unit: mm For switching/digital circuits 1 6 2 5 3 4 UNR1213(UN1213) x 2 elements • Parameter Collector toMaximum base voltage Absolute Rating Collector to emitter voltage of
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XP04213
XP4213)
UNR1213
UN1213)
UN1213
XP04213
XP4213
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UN1213
Abstract: UNR1213 XN01213 XN1213
Text: Composite Transistors XN01213 XN1213 Silicon NPN epitaxial planer transistor Unit: mm For switching/digital circuits +0.2 2.8 -0.3 +0.25 0.65±0.15 1.45±0.1 3 0.65±0.15 1 2 0 to 0.1 UNR1213(UN1213) x 2 elements +0.1 +0.2 1.1 -0.1 ● 0.8 • Basic Part Number of Element
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XN01213
XN1213)
UNR1213
UN1213)
UN1213
XN01213
XN1213
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UN1213
Abstract: UNR1213 XP06213 XP6213
Text: Composite Transistors XP06213 XP6213 Silicon NPN epitaxial planer transistor Unit: mm For switching/digital circuits 1 6 2 5 3 4 UNR1213(UN1213) x 2 elements • Absolute Maximum Ratings 1 : Emitter (Tr1) 2 : Emitter (Tr2) 3 : Base (Tr2) (Ta=25˚C) Parameter
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XP06213
XP6213)
UNR1213
UN1213)
UN1213
XP06213
XP6213
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2SK1103
Abstract: UN1213 UNR1213 XP08081 XP8081
Text: Composite Transistors XP08081 XP8081 Silicon N-channel junction FET (Tr1) Silicon NPN epitaxial planer transistor (Tr2) Unit: mm For analog switching (Tr1)/switching (Tr2) 0.65 1 6 2 5 3 4 +0.05 0.12 –0.02 2SK1103+UNR1213(UN1213) (transistors with built-in resistor)
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XP08081
XP8081)
2SK1103
UNR1213
UN1213)
UN1213
XP08081
XP8081
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UN111F
Abstract: UN1213 UNR111F UNR1213 XP03383
Text: Composite Transistors XP03383 Silicon NPN epitaxial planer transistor Tr1 Silicon PNP epitaxial planer transistor (Tr2) 2.1±0.1 0.65 2.0±0.1 1 2 0.425 5 3 4 +0.05 0.9± 0.1 0 to 0.1 ● UNR1213(UN1213) + UNR111F(UN111F) • Absolute Maximum Ratings Parameter
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XP03383
UNR1213
UN1213)
UNR111F
UN111F)
UN111F
UN1213
XP03383
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XN4313
Abstract: No abstract text available
Text: Composite Transistors XN04313 XN4313 Silicon NPN epitaxial planar transistor (Tr1) Silicon PNP epitaxial planar transistor (Tr2) Unit: mm 2.90+0.20 –0.05 1.9±0.1 (0.95) (0.95) 6 3 2 0.50+0.10 –0.05 • UNR1213 (UN1213) + UNR1113 (UN1113) Tr1 1.1+0.2
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XN04313
XN4313)
UNR1213
UN1213)
UNR1113
UN1113)
SC-74
XN4313
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Untitled
Abstract: No abstract text available
Text: Composite Transistors XP03390 Silicon NPN epitaxial planar transistor Tr1 Silicon PNP epitaxial planar transistor (Tr2) 0.20±0.05 5 5˚ 1 3 2 (0.65) (0.65) 1.3±0.1 2.0±0.1 • Basic Part Number of Element • UNR1213 (UN1213) + UNR1114 (UN1114) 0.9±0.1
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XP03390
UNR1213
UN1213)
UNR1114
UN1114)
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UNR1114
Abstract: UNR1213 UP03390
Text: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors UP03390 Silicon NPN epitaxial planar type (Tr1) Silicon PNP epitaxial planar type (Tr2) Unit: mm For digital circuits +0.05 1.20±0.05 1 2 3 (0.50) (0.50) 1.00±0.05 5˚ (0.20)
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2002/95/EC)
UP03390
UNR1114
UNR1213
UP03390
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2sc5929
Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE
Text: 2009 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and
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responsibiliXP08081
XP08546
XP0A554
XP0D873
XP0D874
XP0D875
XP0E554
2sc5929
MN1280
TRANSISTOR 2SC5929
3SK129
3SK97
2sc5928
2PG009
2SC5929 equivalent
2sk4000
2sd965 TRANSISTOR REPLACEMENT GUIDE
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UN1213
Abstract: UNR1213 XN04213 XN4213
Text: Composite Transistors XN04213 XN4213 Silicon NPN epitaxial planer transistor ● 3 2 0.4±0.2 5˚ Two elements incorporated into one package. (Transistors with built-in resistor) Reduction of the mounting area and assembly cost by one half. 2.8+0.2 –0.3
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XN04213
XN4213)
UNR1213
UN1213)
UN1213
XN04213
XN4213
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UNR1218
Abstract: UNR1219 UNR1215 UNR1216 UNR1217 UNR1211 UNR1212 UNR1213 UNR1214
Text: Transistors with built-in Resistor / 121D/121E/121F/121K/121L / 121D/121E/121F/121K/121L Unit: mm 2.5±0.1 • Features (1.0) R 0.7 ● Costs can be reduced through downsizing of the equipment and
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121D/121E/121F/121K/121L
121D/121E/121F/121K/121L)
UNR1218
UNR1219
UNR1215
UNR1216
UNR1217
UNR1211
UNR1212
UNR1213
UNR1214
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UNR1114
Abstract: UNR1213 UP03390
Text: Composite Transistors UP03390 Silicon NPN epitaxial planar type Tr1 Silicon PNP epitaxial planar type (Tr2) Unit: mm +0.05 (0.30) 4 1 2 3 (0.50) (0.50) 1.00±0.05 (0.20) • Two elements incorporated into one package (Transistors with built-in resistor)
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UP03390
UNR1114
UNR1213
UNR1114
UNR1213
UP03390
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Untitled
Abstract: No abstract text available
Text: Composite Transistors XP04313 XP04313 Silicon NPN epitaxial planar transistor (Tr1) Silicon PNP epitaxial planar transistor (Tr2) 0.2±0.05 5 0.12+0.05 –0.02 4 1.25±0.10 2.1±0.1 • Features 5˚ • Two elements incorporated into one package • Reduction of the mounting area and assembly cost by one half
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XP04313
XP04313)
UNR1213
UN1213)
UNR1113
UN1113)
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors UP03394 Silicon NPN epitaxial planar type (Tr1) Silicon PNP epitaxial planar type (Tr2) Unit: mm +0.05 (0.30) 4 1 2 3 (0.50) (0.50) 1.00±0.05 (0.20) • Two elements incorporated into one package
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2002/95/EC)
UP03394
UNR1118
UNR1213
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UNR1210
Abstract: UNR1211 UNR1212 UNR1213 UNR1214 UNR1215 UNR1216 UNR1217 UNR1218 UNR1219
Text: Transistors with built-in Resistor UNR121x Series UN121x Series Silicon NPN epitaxial planar type Unit: mm For digital circuits 2.5±0.1 (1.0) R 0.9 R 0.7 0.55±0.1 (R1) 47 kΩ 10 kΩ 22 kΩ 47 kΩ 10 kΩ 10 kΩ 4.7 kΩ 22 kΩ 0.51 kΩ 1 kΩ 47 kΩ
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UNR121x
UN121x
UN1210)
UN1211)
UN1212)
UN1213)
UN1214)
UN1215)
UN1216)
UN1217)
UNR1210
UNR1211
UNR1212
UNR1213
UNR1214
UNR1215
UNR1216
UNR1217
UNR1218
UNR1219
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UNR1118
Abstract: UNR1213 UP03394
Text: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors UP03394 Silicon NPN epitaxial planar type (Tr1) Silicon PNP epitaxial planar type (Tr2) Unit: mm For digital circuits +0.05 1.20±0.05 1 2 3 (0.50) (0.50) 1.00±0.05 5˚ (0.20)
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2002/95/EC)
UP03394
UNR1118
UNR1213
UP03394
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UNR1114
Abstract: UNR1213 UP03390G
Text: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors UP03390G Silicon NPN epitaxial planar type (Tr1) Silicon PNP epitaxial planar type (Tr2) For digital circuits • Package Two elements incorporated into one package (Transistors with built-in resistor)
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2002/95/EC)
UP03390G
UNR1114
UNR1213
UNR1114
UNR1213
UP03390G
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UNR1213
Abstract: UP01213
Text: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors UP01213 Silicon NPN epitaxial planar type Unit: mm +0.05 (0.30) 4 • Two elements incorporated into one package (Transistors with built-in resistor) • Reduction of the mounting area and assembly cost by one half
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2002/95/EC)
UP01213
UNR1213
UNR1213
UP01213
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UN111F
Abstract: UN1213 UNR111F UNR1213 UP03383
Text: Composite Transistors UP03383 Silicon NPN epitaxial planar transistor Tr1 Silicon PNP epitaxial planar transistor (Tr2) Unit: mm +0.05 (0.30) 4 • Features 5˚ • Two elements incorporated into one package (Transistors with built-in resistor) • Reduction of the mounting area and assembly cost by one half
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UP03383
UNR1213
UN1213)
UNR111F
UN111F)
UN111F
UN1213
UNR111F
UNR1213
UP03383
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UNR1114
Abstract: UNR1213 UP03390G
Text: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors UP03390G Silicon NPN epitaxial planar type (Tr1) Silicon PNP epitaxial planar type (Tr2) For digital circuits • Package Two elements incorporated into one package (Transistors with built-in resistor)
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2002/95/EC)
UP03390G
UNR1114
UNR1213
UP03390G
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schematic diagram atx Power supply 500w
Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
Text: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455
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P462-ND
P463-ND
LNG295LFCP2U
LNG395MFTP5U
US2011)
schematic diagram atx Power supply 500w
pioneer PAL 012A
1000w inverter PURE SINE WAVE schematic diagram
600va numeric ups circuit diagrams
winbond bios 25064
TLE 9180 infineon
smsc MEC 1300 nu
TBE schematic diagram inverter 2000w
DK55
circuit diagram of luminous 600va UPS
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121f
Abstract: UNR1211 UNR1212 UNR1213 UNR1214 UNR1215 UNR1216 UNR1217 UNR1218 UNR1219
Text: Transistors with built-in Resistor / 121D/121E/121F/121K/121L / 121D/121E/121F/121K/121L Unit: mm 2.5±0.1 • Features (1.0) R 0.7 ● Costs can be reduced through downsizing of the equipment and
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121D/121E/121F/121K/121L
121D/121E/121F/121K/121L)
121f
UNR1211
UNR1212
UNR1213
UNR1214
UNR1215
UNR1216
UNR1217
UNR1218
UNR1219
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