UNR1218
Abstract: UNR1219 UNR1215 UNR1216 UNR1217 UNR1211 UNR1212 UNR1213 UNR1214
Text: Transistors with built-in Resistor / 121D/121E/121F/121K/121L / 121D/121E/121F/121K/121L Unit: mm 2.5±0.1 • Features (1.0) R 0.7 ● Costs can be reduced through downsizing of the equipment and
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121D/121E/121F/121K/121L
121D/121E/121F/121K/121L)
UNR1218
UNR1219
UNR1215
UNR1216
UNR1217
UNR1211
UNR1212
UNR1213
UNR1214
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PDF
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121f
Abstract: UNR1211 UNR1212 UNR1213 UNR1214 UNR1215 UNR1216 UNR1217 UNR1218 UNR1219
Text: Transistors with built-in Resistor / 121D/121E/121F/121K/121L / 121D/121E/121F/121K/121L Unit: mm 2.5±0.1 • Features (1.0) R 0.7 ● Costs can be reduced through downsizing of the equipment and
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121D/121E/121F/121K/121L
121D/121E/121F/121K/121L)
121f
UNR1211
UNR1212
UNR1213
UNR1214
UNR1215
UNR1216
UNR1217
UNR1218
UNR1219
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PDF
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UN1211
Abstract: UNR1211 XP04211 XP4211
Text: Composite Transistors XP04211 XP4211 Silicon NPN epitaxial planer transistor Unit: mm For switching/digital circuits 1 6 2 5 3 4 UNR1211(UN1211) x 2 elements • Absolute Maximum Ratings (Ta=25˚C) Parameter Symbol Ratings Unit Collector to base voltage
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XP04211
XP4211)
UNR1211
UN1211)
UN1211
XP04211
XP4211
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PDF
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UN1111
Abstract: UN1211 UNR1111 UNR1211 XP03311
Text: Composite Transistors XP03311 Silicon NPN epitaxial planer transistor Tr1 Silicon PNP epitaxial planer transistor (Tr2) 2.1±0.1 0.65 2.0±0.1 1 2 0.425 5 3 4 +0.05 0.9± 0.1 0 to 0.1 ● UNR1211(UN1211)+UNR1111(UN1111) • Absolute Maximum Ratings Parameter
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XP03311
UNR1211
UN1211)
UNR1111
UN1111)
UN1111
UN1211
XP03311
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PDF
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UN1211
Abstract: UNR1211 XP06211 XP6211
Text: Composite Transistors XP06211 XP6211 Silicon NPN epitaxial planer transistor Unit: mm For switching/digital circuits 1 6 2 5 3 4 UNR1211(UN1211) x 2 elements • Absolute Maximum Ratings 1 : Emitter (Tr1) 2 : Emitter (Tr2) 3 : Base (Tr2) (Ta=25˚C) Parameter
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XP06211
XP6211)
UNR1211
UN1211)
UN1211
XP06211
XP6211
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PDF
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UN1111
Abstract: UN1211 UNR1111 UNR1211 XP04311 XP4311
Text: Composite Transistors XP04311 XP4311 Silicon NPN epitaxial planer transistor (Tr1) Silicon PNP epitaxial planer transistor (Tr2) Unit: mm For switching/digital circuits 1 6 2 5 3 4 UNR1211(UN1211) + UNR1111(UN1111) • Absolute Maximum Ratings Parameter
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XP04311
XP4311)
UNR1211
UN1211)
UNR1111
UN1111)
UN1111
UN1211
XP04311
XP4311
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PDF
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UN1211
Abstract: UNR1211 XN01211 XN1211
Text: Composite Transistors XN01211 XN1211 Silicon NPN epitaxial planer transistor Unit: mm For switching/digital circuits +0.2 2.8 -0.3 +0.25 0.65±0.15 1.45±0.1 3 0.65±0.15 1 2 0 to 0.1 UNR1211(UN1211) x 2 elements +0.1 +0.2 1.1 -0.1 ● 0.8 • Basic Part Number of Element
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XN01211
XN1211)
UNR1211
UN1211)
UN1211
XN01211
XN1211
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PDF
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UN1211
Abstract: UNR1211 XP01211 XP1211
Text: Composite Transistors XP01211 XP1211 Silicon NPN epitaxial planer transistor Unit: mm 0.2±0.05 For switching/digital circuits 2.1±0.1 1 2 1.25±0.1 0.425 5 3 4 +0.05 0.9± 0.1 UNR1211(UN1211) x 2 elements 0 to 0.1 ● 0.7±0.1 • Basic Part Number of Element
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XP01211
XP1211)
UNR1211
UN1211)
UN1211
XP01211
XP1211
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PDF
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UN1211
Abstract: UNR1211 XP02211 XP2211
Text: Composite Transistors XP02211 XP2211 Silicon NPN epitaxial planer transistor Unit: mm 0.2±0.05 For switching/digital circuits 2.1±0.1 1 2 1.25±0.1 0.425 5 3 4 +0.05 0.9± 0.1 UNR1211(UN1211) x 2 elements 0 to 0.1 ● 0.7±0.1 • Basic Part Number of Element
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XP02211
XP2211)
UNR1211
UN1211)
UN1211
XP02211
XP2211
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PDF
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XN1211
Abstract: UN1211 UNR1211 XN01211
Text: Composite Transistors XN01211 XN1211 Silicon NPN epitaxial planer transistor Unit: mm For switching/digital circuits 2.90+0.20 –0.05 1.9±0.1 0.16+0.10 –0.06 (0.95) (0.95) 2 1 10˚ 1.1+0.2 –0.1 • Basic Part Number of Element 0 to 0.1 UNR1211(UN1211) x 2 elements
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XN01211
XN1211)
UNR1211
UN1211)
XN1211
UN1211
XN01211
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PDF
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UN1211
Abstract: UNR1211 XN02211 XN2211
Text: Composite Transistors XN02211 XN2211 Silicon NPN epitaxial planer transistor Unit: mm For switching/digital circuits +0.2 2.8 -0.3 +0.25 0.65±0.15 1.45±0.1 3 0.65±0.15 1 2 0 to 0.1 UNR1211(UN1211) x 2 elements +0.1 +0.2 1.1 -0.1 ● 0.8 • Basic Part Number of Element
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XN02211
XN2211)
UNR1211
UN1211)
UN1211
XN02211
XN2211
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PDF
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121F
Abstract: UNR1211 UNR1212 UNR1213 UNR1214 UNR1215 UNR1216 UNR1217 UNR1218 UNR1219
Text: Transistors with built-in Resistor / 121D/121E/121F/121K/121L / 121D/121E/121F/121K/121L Unit: mm 6.9±0.1 2.5±0.1 Costs can be reduced through downsizing of the equipment and
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121D/121E/121F/121K/121L
121D/121E/121F/121K/121L)
UNR1211
UNR1212
UNR1213
UNR1214
UNR1215
UNR1216
UNR1217
UNR1218
121F
UNR1211
UNR1212
UNR1213
UNR1214
UNR1215
UNR1216
UNR1217
UNR1218
UNR1219
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PDF
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UN1211
Abstract: UNR1211 XN02211 XN2211
Text: Composite Transistors XN02211 XN2211 Silicon NPN epitaxial planer transistor Unit: mm For switching/digital circuits 2.90+0.20 –0.05 1.9±0.1 0.16+0.10 –0.06 (0.95) (0.95) 2 1 10˚ 1.1+0.2 –0.1 • Basic Part Number of Element 0 to 0.1 UNR1211(UN1211) x 2 elements
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XN02211
XN2211)
UNR1211
UN1211)
UN1211
XN02211
XN2211
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PDF
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2sc5929
Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE
Text: 2009 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and
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responsibiliXP08081
XP08546
XP0A554
XP0D873
XP0D874
XP0D875
XP0E554
2sc5929
MN1280
TRANSISTOR 2SC5929
3SK129
3SK97
2sc5928
2PG009
2SC5929 equivalent
2sk4000
2sd965 TRANSISTOR REPLACEMENT GUIDE
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UNR1210
Abstract: UNR1211 UNR1212 UNR1213 UNR1214 UNR1215 UNR1216 UNR1217 UNR1218 UNR1219
Text: Transistors with built-in Resistor UNR121x Series UN121x Series Silicon NPN epitaxial planar type Unit: mm For digital circuits 2.5±0.1 (1.0) R 0.9 R 0.7 0.55±0.1 (R1) 47 kΩ 10 kΩ 22 kΩ 47 kΩ 10 kΩ 10 kΩ 4.7 kΩ 22 kΩ 0.51 kΩ 1 kΩ 47 kΩ
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UNR121x
UN121x
UN1210)
UN1211)
UN1212)
UN1213)
UN1214)
UN1215)
UN1216)
UN1217)
UNR1210
UNR1211
UNR1212
UNR1213
UNR1214
UNR1215
UNR1216
UNR1217
UNR1218
UNR1219
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schematic diagram atx Power supply 500w
Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
Text: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455
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P462-ND
P463-ND
LNG295LFCP2U
LNG395MFTP5U
US2011)
schematic diagram atx Power supply 500w
pioneer PAL 012A
1000w inverter PURE SINE WAVE schematic diagram
600va numeric ups circuit diagrams
winbond bios 25064
TLE 9180 infineon
smsc MEC 1300 nu
TBE schematic diagram inverter 2000w
DK55
circuit diagram of luminous 600va UPS
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PDF
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UN1211
Abstract: UNR1211 XP01211 XP1211
Text: Composite Transistors XP01211 XP1211 Silicon NPN epitaxial planer transistor 0.20±0.05 5 ● 0.12+0.05 –0.02 4 5° Two elements incorporated into one package. (Emitter-coupled transistors with built-in resistor) Reduction of the mounting area and assembly cost by one half.
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XP01211
XP1211)
UNR1211
UN1211)
UN1211
XP01211
XP1211
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PDF
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UN1211
Abstract: UNR1211 XN02211 XN2211
Text: Composite Transistors XN02211 XN2211 Silicon NPN epitaxial planer transistor Unit: mm For switching/digital circuits 2.90+0.20 –0.05 1.9±0.1 0.16+0.10 –0.06 (0.95) (0.95) 3 4 5 1.50+0.25 –0.05 Two elements incorporated into one package. (Base-coupled transistors with built-in resistor)
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XN02211
XN2211)
UNR1211
UN1211)
UN1211
XN02211
XN2211
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PDF
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UNR1154
Abstract: UNR1211 UP03397
Text: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors UP03397 Silicon NPN epitaxial planar type (Tr1) Silicon PNP epitaxial planar type (Tr2) Unit: mm +0.05 (0.30) 4 1 2 3 (0.50) (0.50) 1.00±0.05 (0.20) • Two elements incorporated into one package
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2002/95/EC)
UP03397
UNR1154
UNR1211
UNR1154
UNR1211
UP03397
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PDF
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors UP03396 Silicon NPN epitaxial planar type (Tr1) Silicon PNP epitaxial planar type (Tr2) Unit: mm +0.05 (0.30) 4 1 2 3 (0.50) (0.50) 1.00±0.05 (0.20) • Two elements incorporated into one package
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2002/95/EC)
UP03396
UNR111T
UNR1211
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PDF
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Untitled
Abstract: No abstract text available
Text: Transistors with built-in Resistor UNR121x Series UN121x Series Silicon NPN epitaxial planar type Unit: mm 2.5±0.1 (1.0) R 0.9 M Di ain sc te on na tin nc ue e/ d • Costs can be reduced through downsizing of the equipment and reduction of the number of parts
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UNR121x
UN121x
UNR1210
UNR1211
UNR1212
UNR1213
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PDF
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UN1211
Abstract: UNR1211 XN04211 XN4211
Text: Composite Transistors XN04211 XN4211 Silicon NPN epitaxial planer transistor ● 3 2 0.4±0.2 Two elements incorporated into one package. (Transistors with built-in resistor) Reduction of the mounting area and assembly cost by one half. 2.8+0.2 –0.3 6
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XN04211
XN4211)
UNR1211
UN1211)
UN1211
XN04211
XN4211
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PDF
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STF12A80
Abstract: BSTC1026 BSTD1046 BTB04-600SAP STF6A80 BSTD1040 TO510DH BSTC1040 TO812NJ BTB15-700B
Text: Cross Reference For the most up to date cross reference, go to the product portal: Manufacturer type number Manufacturer Philips type number Page number Manufacturer type number Manufacturer
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02CZ10
02CZ11
02CZ12
02CZ13
02CZ15
02CZ16
02CZ18
02CZ2
02CZ20
STF12A80
BSTC1026
BSTD1046
BTB04-600SAP
STF6A80
BSTD1040
TO510DH
BSTC1040
TO812NJ
BTB15-700B
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PDF
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors UP03396 Silicon NPN epitaxial planar type (Tr1) Silicon PNP epitaxial planar type (Tr2) Unit: mm +0.05 (0.30) 1 2 3 (0.50) (0.50) 1.00±0.05 (0.20) 5˚ di p Pl lan nclu ea
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2002/95/EC)
UP03396
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PDF
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