UN1115
Abstract: UN1215 UNR1115 UNR1215 XP04315 XP4315
Text: Composite Transistors XP04315 XP4315 Silicon NPN epitaxial planer transistor (Tr1) Silicon PNP epitaxial planer transistor (Tr2) Unit: mm For switching/digital circuits 1 6 2 5 3 4 +0.05 UNR1215(UN1215) + UNR1115(UN1115) • Absolute Maximum Ratings Parameter
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XP04315
XP4315)
UNR1215
UN1215)
UNR1115
UN1115)
UN1115
UN1215
XP04315
XP4315
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PDF
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UN1215
Abstract: UNR1215 XN01215 XN1215
Text: Composite Transistors XN01215 XN1215 Silicon NPN epitaxial planer transistor Unit: mm For switching/digital circuits +0.2 2.8 -0.3 +0.25 0.65±0.15 1.45±0.1 3 0.65±0.15 1 2 0 to 0.1 UNR1215(UN1215) x 2 elements +0.1 +0.2 1.1 -0.1 ● 0.8 • Basic Part Number of Element
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XN01215
XN1215)
UNR1215
UN1215)
UN1215
XN01215
XN1215
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PDF
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SC74A
Abstract: UN1215 UNR1215 XN02215 XN2215
Text: Composite Transistors XN02215 XN2215 Silicon NPN epitaxial planer transistor Unit: mm For switching/digital circuits +0.2 2.8 -0.3 +0.25 0.65±0.15 1.45±0.1 3 0.65±0.15 1 2 0 to 0.1 UNR1215(UN1215) x 2 elements +0.1 +0.2 1.1 -0.1 ● 0.8 • Basic Part Number of Element
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XN02215
XN2215)
UNR1215
UN1215)
SC74A
UN1215
XN02215
XN2215
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PDF
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UN1215
Abstract: UNR1215 XP04215 XP4215
Text: Composite Transistors XP04215 XP4215 Silicon NPN epitaxial planer transistor Unit: mm For switching/digital circuits 1 6 2 5 3 4 UNR1215(UN1215) x 2 elements • Absolute Maximum Ratings (Ta=25˚C) Parameter Symbol Ratings Unit Collector to base voltage
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Original
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XP04215
XP4215)
UNR1215
UN1215)
UN1215
XP04215
XP4215
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PDF
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UN1215
Abstract: UNR1215 XP02215 XP2215
Text: Composite Transistors XP02215 XP2215 Silicon NPN epitaxial planer transistor Unit: mm 0.2±0.05 For switching/digital circuits 2.1±0.1 1 2 1.25±0.1 0.425 5 3 4 +0.05 0.9± 0.1 UNR1215(UN1215) x 2 elements 0 to 0.1 ● 0.7±0.1 • Basic Part Number of Element
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Original
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XP02215
XP2215)
UNR1215
UN1215)
UN1215
XP02215
XP2215
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PDF
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UN1215
Abstract: UNR1215 XP01215 XP1215
Text: Composite Transistors XP01215 XP1215 Silicon NPN epitaxial planer transistor Unit: mm 0.2±0.05 For switching/digital circuits 2.1±0.1 1 2 1.25±0.1 0.425 5 3 4 +0.05 0.9± 0.1 UNR1215(UN1215) x 2 elements 0 to 0.1 ● 0.7±0.1 • Basic Part Number of Element
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Original
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XP01215
XP1215)
UNR1215
UN1215)
UN1215
XP01215
XP1215
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PDF
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UNR1215
Abstract: XP06215 XP6215 UN1215
Text: Composite Transistors XP06215 XP6215 Silicon NPN epitaxial planer transistor Unit: mm For switching/digital circuits 1 6 2 5 3 4 UNR1215(UN1215) x 2 elements • Absolute Maximum Ratings 1 : Emitter (Tr1) 2 : Emitter (Tr2) 3 : Base (Tr2) (Ta=25˚C) Parameter
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Original
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XP06215
XP6215)
UNR1215
UN1215)
XP06215
XP6215
UN1215
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PDF
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2sc5929
Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE
Text: 2009 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and
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Original
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responsibiliXP08081
XP08546
XP0A554
XP0D873
XP0D874
XP0D875
XP0E554
2sc5929
MN1280
TRANSISTOR 2SC5929
3SK129
3SK97
2sc5928
2PG009
2SC5929 equivalent
2sk4000
2sd965 TRANSISTOR REPLACEMENT GUIDE
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PDF
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UNR1218
Abstract: UNR1219 UNR1215 UNR1216 UNR1217 UNR1211 UNR1212 UNR1213 UNR1214
Text: Transistors with built-in Resistor / 121D/121E/121F/121K/121L / 121D/121E/121F/121K/121L Unit: mm 2.5±0.1 • Features (1.0) R 0.7 ● Costs can be reduced through downsizing of the equipment and
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121D/121E/121F/121K/121L
121D/121E/121F/121K/121L)
UNR1218
UNR1219
UNR1215
UNR1216
UNR1217
UNR1211
UNR1212
UNR1213
UNR1214
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PDF
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SC74A
Abstract: UN1215 UNR1215 XN02215 XN2215 EIAJ-SC74A
Text: Composite Transistors XN02215 XN2215 Silicon NPN epitaxial planer transistor Unit: mm 2.90+0.20 –0.05 1.9±0.1 (0.95) (0.95) ● Two elements incorporated into one package. (Base-coupled transistors with built-in resistor) Reduction of the mounting area and assembly cost by one half.
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XN02215
XN2215)
UNR1215
UN1215)
SC74A
UN1215
XN02215
XN2215
EIAJ-SC74A
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PDF
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Untitled
Abstract: No abstract text available
Text: Composite Transistors XN02215 XN2215 Silicon NPN epitaxial planer transistor Unit: mm 2.90+0.20 –0.05 1.9±0.1 (0.95) (0.95) 4 5 1.50+0.25 –0.05 3 Two elements incorporated into one package. (Base-coupled transistors with built-in resistor) Reduction of the mounting area and assembly cost by one half.
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XN02215
XN2215)
UNR1215
UN1215)
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PDF
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UN1215
Abstract: UNR1215 XN06215 XN6215
Text: Composite Transistors XN06215 XN6215 Silicon NPN epitaxial planer transistor Unit: mm For switching/digital circuits +0.2 2.8 –0.3 +0.25 • Absolute Maximum Ratings Parameter Collector to base voltage Rating Collector to emitter voltage of element Collector current
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Original
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XN06215
XN6215)
UN1215
UNR1215
XN06215
XN6215
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PDF
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UN1215
Abstract: UNR1215 XN04215 XN4215
Text: Composite Transistors XN04215 XN4215 Silicon NPN epitaxial planer transistor Unit: mm For switching/digital circuits +0.2 2.8 –0.3 +0.25 • Absolute Maximum Ratings Parameter Collector to base voltage Rating Collector to emitter voltage of element Collector current
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Original
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XN04215
XN4215)
UN1215
UNR1215
XN04215
XN4215
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PDF
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UNR1210
Abstract: UNR1211 UNR1212 UNR1213 UNR1214 UNR1215 UNR1216 UNR1217 UNR1218 UNR1219
Text: Transistors with built-in Resistor UNR121x Series UN121x Series Silicon NPN epitaxial planar type Unit: mm For digital circuits 2.5±0.1 (1.0) R 0.9 R 0.7 0.55±0.1 (R1) 47 kΩ 10 kΩ 22 kΩ 47 kΩ 10 kΩ 10 kΩ 4.7 kΩ 22 kΩ 0.51 kΩ 1 kΩ 47 kΩ
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UNR121x
UN121x
UN1210)
UN1211)
UN1212)
UN1213)
UN1214)
UN1215)
UN1216)
UN1217)
UNR1210
UNR1211
UNR1212
UNR1213
UNR1214
UNR1215
UNR1216
UNR1217
UNR1218
UNR1219
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PDF
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121f
Abstract: UNR1211 UNR1212 UNR1213 UNR1214 UNR1215 UNR1216 UNR1217 UNR1218 UNR1219
Text: Transistors with built-in Resistor / 121D/121E/121F/121K/121L / 121D/121E/121F/121K/121L Unit: mm 2.5±0.1 • Features (1.0) R 0.7 ● Costs can be reduced through downsizing of the equipment and
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Original
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121D/121E/121F/121K/121L
121D/121E/121F/121K/121L)
121f
UNR1211
UNR1212
UNR1213
UNR1214
UNR1215
UNR1216
UNR1217
UNR1218
UNR1219
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PDF
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Untitled
Abstract: No abstract text available
Text: Transistors with built-in Resistor UNR121x Series UN121x Series Silicon NPN epitaxial planar type Unit: mm 2.5±0.1 (1.0) R 0.9 M Di ain sc te on na tin nc ue e/ d • Costs can be reduced through downsizing of the equipment and reduction of the number of parts
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UNR121x
UN121x
UNR1210
UNR1211
UNR1212
UNR1213
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PDF
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UN1115
Abstract: UN1215 UNR1115 UNR1215 XN04315 XN4315
Text: Composite Transistors XN04315 XN4315 Silicon NPN epitaxial planer transistor (Tr1) Silicon PNP epitaxial planer transistor (Tr2) ● 3 2 0.4±0.2 Two elements incorporated into one package. (Transistors with built-in resistor) Reduction of the mounting area and assembly cost by one half.
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Original
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XN04315
XN4315)
UNR1215
UN1215)
UNR1115
UN1115)
UN1115
UN1215
XN04315
XN4315
|
PDF
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UN1115
Abstract: UN1215 UNR1115 UNR1215 XN04315 XN4315
Text: Composite Transistors XN04315 XN4315 Silicon NPN epitaxial planer transistor (Tr1) Silicon PNP epitaxial planer transistor (Tr2) Unit: mm For switching/digital circuits +0.2 2.8 –0.3 +0.25 3 Parameter (Ta=25˚C) Symbol Ratings Unit Collector to base voltage
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Original
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XN04315
XN4315)
UN1115
UN1215
UNR1115
UNR1215
XN04315
XN4315
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PDF
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2SC5936
Abstract: 2SC6073 PANASONIC TRANSISTOR 2SC6073 2sc5929 MN1280 transistor 2SC6073 2SC5936 equivalent 2SC6074 TRANSISTOR 2SC5929 2sc5928
Text: 2009 ver.2 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and
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Original
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XP06501T
XP06531
XP06545
XP0A554
XP0D873
XP0D874
XP0D875
2SC5936
2SC6073
PANASONIC TRANSISTOR 2SC6073
2sc5929
MN1280
transistor 2SC6073
2SC5936 equivalent
2SC6074
TRANSISTOR 2SC5929
2sc5928
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PDF
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SC74A
Abstract: UN1215 UNR1215 XN02215 XN2215
Text: Composite Transistors XN02215 XN2215 Silicon NPN epitaxial planer transistor Unit: mm For switching/digital circuits 2.90+0.20 –0.05 1.9±0.1 (0.95) (0.95) M Di ain sc te on na tin nc ue e/ d 0.16+0.10 –0.06 ● 4 5 2.8+0.2 –0.3 3 Two elements incorporated into one package.
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XN02215
XN2215)
SC74A
UN1215
UNR1215
XN02215
XN2215
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PDF
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UN1215
Abstract: UNR1215 XN06215 XN6215
Text: Composite Transistors XN06215 XN6215 Silicon NPN epitaxial planer transistor 3 2 0.4±0.2 Two elements incorporated into one package. (Transistors with built-in resistor) Reduction of the mounting area and assembly cost by one half. 2.8+0.2 –0.3 1.50+0.25
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XN06215
XN6215)
UNR1215
UN1215)
UN1215
XN06215
XN6215
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PDF
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121F
Abstract: UNR1211 UNR1212 UNR1213 UNR1214 UNR1215 UNR1216 UNR1217 UNR1218 UNR1219
Text: Transistors with built-in Resistor / 121D/121E/121F/121K/121L / 121D/121E/121F/121K/121L Unit: mm 6.9±0.1 2.5±0.1 Costs can be reduced through downsizing of the equipment and
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Original
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121D/121E/121F/121K/121L
121D/121E/121F/121K/121L)
UNR1211
UNR1212
UNR1213
UNR1214
UNR1215
UNR1216
UNR1217
UNR1218
121F
UNR1211
UNR1212
UNR1213
UNR1214
UNR1215
UNR1216
UNR1217
UNR1218
UNR1219
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PDF
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UN1215
Abstract: UNR1215 XP02215 XP2215
Text: Composite Transistors XP02215 XP2215 Silicon NPN epitaxial planer transistor (0.425) Unit: mm For switching/digital circuits 0.20±0.05 5 ● 0.2±0.1 Two elements incorporated into one package. (Base-coupled transistors with built-in resistor) Reduction of the mounting area and assembly cost by one half.
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Original
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XP02215
XP2215)
UNR1215
UN1215)
UN1215
XP02215
XP2215
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PDF
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XP06215
Abstract: XP6215 UN1215 UNR1215
Text: Composite Transistors XP06215 XP6215 Silicon NPN epitaxial planer transistor 0.2±0.05 5 6 ● 4 Features 0.2±0.1 Two elements incorporated into one package. (Transistors with built-in resistor) Reduction of the mounting area and assembly cost by one half.
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Original
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XP06215
XP6215)
UNR1215
UN1215)
XP06215
XP6215
UN1215
|
PDF
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