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    M28V411 Search Results

    M28V411 Datasheets (19)

    Part ECAD Model Manufacturer Description Curated Type PDF
    M28V411 STMicroelectronics LOW VOLTAGE 4 Megabit (x 8, Block Erase) FLASH MEMORY Original PDF
    M28V411-120N1 STMicroelectronics LOW VOLTAGE 4 Megabit (x 8, Block Erase) FLASH MEMORY Original PDF
    M28V411-120N1TR STMicroelectronics LOW VOLTAGE 4 Megabit (x 8, Block Erase) FLASH MEMORY Original PDF
    M28V411-120N3 STMicroelectronics LOW VOLTAGE 4 Megabit (x 8, Block Erase) FLASH MEMORY Original PDF
    M28V411-120N3TR STMicroelectronics LOW VOLTAGE 4 Megabit (x 8, Block Erase) FLASH MEMORY Original PDF
    M28V411-120N5 STMicroelectronics LOW VOLTAGE 4 Megabit (x 8, Block Erase) FLASH MEMORY Original PDF
    M28V411-120N5TR STMicroelectronics LOW VOLTAGE 4 Megabit (x 8, Block Erase) FLASH MEMORY Original PDF
    M28V411-120N6 STMicroelectronics LOW VOLTAGE 4 Megabit (x 8, Block Erase) FLASH MEMORY Original PDF
    M28V411-120N6TR STMicroelectronics LOW VOLTAGE 4 Megabit (x 8, Block Erase) FLASH MEMORY Original PDF
    M28V411-150N1 STMicroelectronics LOW VOLTAGE 4 Megabit (x 8, Block Erase) FLASH MEMORY Original PDF
    M28V411-150N1R SGS-Thomson EEPROM Parallel Async Original PDF
    M28V411-150N1TR STMicroelectronics LOW VOLTAGE 4 Megabit (x 8, Block Erase) FLASH MEMORY Original PDF
    M28V411-150N3 STMicroelectronics LOW VOLTAGE 4 Megabit (x 8, Block Erase) FLASH MEMORY Original PDF
    M28V411-150N3TR STMicroelectronics LOW VOLTAGE 4 Megabit (x 8, Block Erase) FLASH MEMORY Original PDF
    M28V411-150N5 STMicroelectronics LOW VOLTAGE 4 Megabit (x 8, Block Erase) FLASH MEMORY Original PDF
    M28V411-150N5TR STMicroelectronics LOW VOLTAGE 4 Megabit (x 8, Block Erase) FLASH MEMORY Original PDF
    M28V411-150N6 STMicroelectronics LOW VOLTAGE 4 Megabit (x 8, Block Erase) FLASH MEMORY Original PDF
    M28V411-150N6R SGS-Thomson EEPROM Parallel Async Original PDF
    M28V411-150N6TR STMicroelectronics LOW VOLTAGE 4 Megabit (x 8, Block Erase) FLASH MEMORY Original PDF

    M28V411 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    M28V411

    Abstract: M28V421
    Text: M28V411 M28V421 LOW VOLTAGE 4 Megabit x 8, Block Erase FLASH MEMORY PRELIMINARY DATA SMALL SIZE PLASTIC PACKAGE TSOP40 MEMORY ERASE in BLOCKS – One 16K Byte Boot Block (top or bottom location) with hardware write and erase protection – Two 8K Byte Key Parameter Blocks


    Original     		PDF M28V411 M28V421 TSOP40 120ns M28V41patent M28V411 M28V421

    Untitled

    Abstract: No abstract text available
    Text: M28V411 M28V421 LOW VOLTAGE 4 Megabit x 8, Block Erase FLASH MEMORY DATA BRIEFING MEMORY ERASE in BLOCKS – One 16K Byte Boot Block (top or bottom location) with hardware write and erase protection – Two 8K Byte Key Parameter Blocks – One 96K Byte Main Block


    Original     		PDF M28V411 M28V421 120ns TSOP40 M28V421 AI01406

    M25P08

    Abstract: MD2800-D08 pmc flash pm49fl004t-33jc MD2810-D08 m25p04 SDTB-128 MD2811-D32-V3 M25P08-V-MN-6-T Sandisk TSOP EPROM databook am27c256 120
    Text: SST Base Memory Cross Reference Table Silicon Storage Technology, Inc. Density Voltage Organized as x8/ x16 SST AMD ST Microelectronics Atmel Intel Winbond Flash 512K 5V 8 SST39SF512; SST29EE512 AM28F512 M29F512 AT49F512, AT29C512 - W29EE512 1M 5V 8 SST39SF010; SST29EE010


    Original     		PDF SST39SF512; SST29EE512 AM28F512 M29F512 AT49F512, AT29C512 W29EE512 SST39SF010; SST29EE010 AM29F010, M25P08 MD2800-D08 pmc flash pm49fl004t-33jc MD2810-D08 m25p04 SDTB-128 MD2811-D32-V3 M25P08-V-MN-6-T Sandisk TSOP EPROM databook am27c256 120

    256k x8 SRAM 5V

    Abstract: ST95080 rom 1K x8 mod 10 asynchronous ST1335 M28V210 M6280 3.3 -35Y M48Z09
    Text: MEMORY PRODUCTS SELECTOR GUIDE A D) OTP Memory - 5V range Type M27C64A M27C256B M87C257 M27C512 M27C1001* M27C1024* M27C2001* M27C405* M27C4001 M27C4002 M27C801 Size 64K 256K 256K 512K 1 Meg 1 Meg 2 Meg 4 Meg 4 Meg 4 Meg 8 Meg Organisation Access Time ns)


    Original     		PDF M27C64A M27C256B M87C257 M27C512 M27C1001* M27C1024* M27C2001* M27C405* M27C4001 M27C4002 256k x8 SRAM 5V ST95080 rom 1K x8 mod 10 asynchronous ST1335 M28V210 M6280 3.3 -35Y M48Z09

    f421

    Abstract: v421 6080ns
    Text: Gì. M28F411, F421 M28V411, V421 SGS-1H0MS0N IU CMOS 4 Megabit 512K x 8, 7 Block Erase _ FLASH MEMORY ABBREVIATED DATA SMALL SIZE TSOP40 PLASTIC PACKAGE - Normal and Reverse Pinout MEMORY ERASE in BLOCKS - One 16K Boot Block (top or bottom location)


    OCR Scan     		PDF M28F411, M28V411, TSOP40 r------------1196 f421 v421 6080ns

    F421

    Abstract: No abstract text available
    Text: SGS-1H0MS0N M28F411, F421 M28V411, V421 IO CMOS 4 Megabit 512K x 8, 7 Block Erase _ FLASH MEMORY ADVANCE DATA S M ALL SIZE TSO P40 PLASTIC P A C K A G E - Normal and Reverse Pinout i M EM O R Y E R A S E in B L O C K S - One 16K Boot Block (top or bottom location)


    OCR Scan     		PDF M28F411, M28V411, M28F411 100ns F421

    Untitled

    Abstract: No abstract text available
    Text: rZ J M28V411 M28V421 S G S -T H O M S O N LOW VOLTAGE 4 Megabit x 8, Block Erase FLASH MEMORY PRELIMINARY DATA • SMALL SIZE PLASTIC PACKAGE TSOP40 ■ MEMORY ERASE in BLOCKS - One 16K Byte Boot Block (top or bottom lo­ cation) with hardware write and erase pro­


    OCR Scan     		PDF M28V411 M28V421 TSOP40 120ns

    TDA0161 equivalent

    Abstract: 1N3393 BDX54F equivalent byt301000 bux transient voltage suppressor ST90R9 ua776mh sgs 2n3055 Transistor morocco mje13007 inmos transputer reference manual
    Text: SHORTFORM 1995 NOVEMBER 1994 USE IN LIFE SUPPORT DEVICES OR SYSTEMS MUST BE EXPRESSLY AUTHORIZED SGS-THOMSON PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF SGS-THOMSON Microelectronics. As used herein:


    OCR Scan     		PDF

    MK45H14

    Abstract: AN-211 mk48c02 M48Z09 M48Z19 ST16XY ST16xyz M48Z32Y MK45h04 M/MCMA140P1600TA
    Text: GENERAL INDEX C M O S UV EPR O M & OTP M EM O R IE S . M27C64A C M O S 64K 8K x 8 UV E P R O M . 57 55 M27C256B C M O S 256K (32K x 8) UV EPRO M & OTP R O M .


    OCR Scan     		PDF M27C64A M27C256B M87C257 M27C512 M27V512 M27C1001 M27V101 M27C1024 M27C2001 M27V201 MK45H14 AN-211 mk48c02 M48Z09 M48Z19 ST16XY ST16xyz M48Z32Y MK45h04 M/MCMA140P1600TA

    Untitled

    Abstract: No abstract text available
    Text: M 28V411 M 28V421 SGS-THOMSON ^ 7 # . IH [MillLI©lS©H gS LOW VOLTAGE 4 Megabit (x 8, Block Erase FLASH MEMORY PRELIMINARY DATA • SMALL SIZE PLASTIC PACKAGE TSOP40 ■ MEMORY ERASE in BLOCKS - One 16K Byte Boot Block (top or bottom lo­ cation) with hardware write and erase pro­


    OCR Scan     		PDF 28V411 28V421 TSOP40 55nATypical 120ns

    MK48T87B24

    Abstract: ST24C02CB1 MK48T18B15 M48Z32Y-100PC1 M2764AF1 MK48Z02B-20 MKI48Z12B15 ST24C01CB1 MK48Z02B-25 ST24C16CM1TR
    Text: •y , . r i'. " - L. - S .• u _ NON VOLATILE MÉMBMES CMOS UV EPROM and OTP ROM Size 64K 256K Part N umber O rganisation Ucc ns Vcc Range Icc ! Stby Tem perature Range (°C) Package M27C64A-15F1 8K X 8 150 5V ± 10% 30mA / 1 00nA Oto 70 FDIP28W


    OCR Scan     		PDF M27C64A-15F1 M27C64A-20F1 M27C64A-25F1 M27C64A-30F1 M27C64A-20F6 M27C64A-25F6 M27C64A-30F6 ST16601 ST16F48 ST16SF48 MK48T87B24 ST24C02CB1 MK48T18B15 M48Z32Y-100PC1 M2764AF1 MK48Z02B-20 MKI48Z12B15 ST24C01CB1 MK48Z02B-25 ST24C16CM1TR