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    TC531001CP Price and Stock

    Toshiba America Electronic Components TC531001CP-F818

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    Bristol Electronics TC531001CP-F818 363
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    Toshiba America Electronic Components TC531001CP

    ROM, 128K x 8, 32 Pin, Plastic, DIP
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components TC531001CP 176
    • 1 $15
    • 10 $15
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    TC531001CP Datasheets (4)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    TC531001CP Toshiba 120ns, V(dd): -0.5 to +7V, 1M bit (128K word x 8 bit) CMOS MASK ROM Scan PDF
    TC531001CP-12 Toshiba 1M BIT (128K WORD x 8-Bit) CMOS MASK ROM Scan PDF
    TC531001CP-12 Toshiba Toshiba Shortform Catalog Scan PDF
    TC531001CP-15 Toshiba 1M BIT (128K WORD x 8-Bit) CMOS MASK ROM Scan PDF

    TC531001CP Datasheets Context Search

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    Untitled

    Abstract: No abstract text available
    Text: Bé h H| h M i •MÉrifli IH BIT 128K WORD x 8 BIT CMOS MASK ROM SILICON GATE CMOS DESCRIPTION The TC531001CP/CF is a 1,048,576 bits read only memory organized as 131,072 words by 8 bits with a low bit cost, thus being suitable for use in program memory of micro­


    OCR Scan     		PDF TC531001CP/CF 120ns 150ns TC531001CP-12, TC531001

    Untitled

    Abstract: No abstract text available
    Text: SILICON STACKED GATE MOS INTEGRATED CIRCUIT TC531001CP/CM2,-15 1M BIT 128K W O R D X 8 BIT C M O S M A S K RO M DESCRIPTION T h e T C 5 3 1 0 0 1 C P /C F is a 1, 048, 576 b its re a d on ly m em ory o rgan ized a s 131, 072 w ords by 8 b its w ith a low b it cost, th u s b e in g su ita b le for u se in p ro g ram m em ory o f m icrop rocessor, an d d a ta


    OCR Scan     		PDF TC531001CP/CM2 TC531001CP/CF 120ns 150ns A0-A16

    203d6

    Abstract: 3A11 A12C TC531001CF TC531001CP
    Text: IH BIT 128K WORD x 8 BIT CMOS Í1ASK ROM SILICON GATE CMOS DESCRIPTION The TC531001CP/CF is a 1,048,576 bits read only memory organized as 131,072 words by 8 bits with a low bit cost, thus being suitable for use in program memory of micro­ processor, and data memory, especially character generator. The TC531001CP/CF using


    OCR Scan     		PDF TC531001CP/CF TC531001CP TC531001CF 120ns 150ns TC531001CP/CFâ DIP32-P-600) 203d6 3A11 A12C TC531001CF TC531001CP

    TC531001CP

    Abstract: No abstract text available
    Text: TOSHIBA TC531001CP-12/15 TC531001CF-12/15 SILICON STACKED GATE CMOS 131,072 WORD x 8 BIT CMOS MASK ROM D escription The TC531001CP/CF is a 1,048,576 bit read only memory organized as 131,072 words by 8 bits. A low bit cost makes It suitable for use as program memory for microprocessors or for fixed data storage such as a character generator. The TC531001 CP/CF


    OCR Scan     		PDF TC531001CP-12/15 TC531001CF-12/15 TC531001CP/CF TC531001 TC531001CP/CF-12 120ns theTC531001CP/CF-15 150ns TC531001CP/ TC531001CP

    2SKI34

    Abstract: TA8515 westinghouse TA8509F CTC 313 transistor pin diagram TOSHIBA DIODE CATALOG T6950 TD62803 LSI LOGIC product catalog TC8576
    Text: [CATALOG 5VSTEMCATALOG SV5TEMCATALOG 5V5TEM CATALOG 5VSTEM C K T Q S rG A m .ro H IB f lp T E M CATALOG SV5TEM CATALOG 5VSTEM CATALOG S t 5 v llfflC A T A L O G SVSTEMCATALOG SVSTEMCATALOG SVSTEM CA SVSTEM CATALOG SVSTEM CATALOG 5V 5TE M CATALOG SVSTEM CATALOG S t


    OCR Scan     		PDF J22587 90-3D 2SKI34 TA8515 westinghouse TA8509F CTC 313 transistor pin diagram TOSHIBA DIODE CATALOG T6950 TD62803 LSI LOGIC product catalog TC8576

    41C1000

    Abstract: fujitsu 814100 TC 55464 toshiba HN62304 hn623257 658128 816b 41c464 hn62324 M7202A
    Text: MEM ORY ICs FUNCTION GUIDE 3. C R O S S REFERENCE GUIDE 3.1 DRAM Density Org. Samsung Mode Toshiba Hitachi Fujitsu H M 51 256 M B 81256 NEC Oki 64K X 1 Page K M 416 4 25 6 K X 1 F. Page KM 41C256 TC 51256 Nibble KM 41C257 TC51257 S. C olu m n KM 41C258 TC 51258


    OCR Scan     		PDF 41C256 41C257 41C258 41C464 41C466 41C1000 44C256 44C258 44C1002 TC51257 fujitsu 814100 TC 55464 toshiba HN62304 hn623257 658128 816b hn62324 M7202A

    41C464

    Abstract: 41C1000 TC55B8128 424170 NEC CY70199 44C1000 IOT7164 HN62308BP HN62404P TC5116100
    Text: MEM ORY ICs CRO SS REFERENCE GUIDE 3. C R O SS REFERENCE GUIDE 3.1 DRAM Density 25 6 K Org. X 1 X 4 1M X 1 X 4 4M X 1 X 4 x8 16M M ode Sa m su n g F. Page KM 41C256 TC 51256 N ibble KM 41C257 TC 51257 S. C o lu m n KM 41C258 TC 51258 H M 51 258 MB81258 F. Page


    OCR Scan     		PDF 41C256 41C257 41C258 41C464 41C466 41C1000 41C1002 44C256 44C258 41C4000 TC55B8128 424170 NEC CY70199 44C1000 IOT7164 HN62308BP HN62404P TC5116100

    K93C46

    Abstract: 93cs46n MB832001 hn62308 41C1000 93C46LN 41464 hn623257 HM63832 DT71256
    Text: MEMORY ICs CROSS REFERENCE GUIDE 3. CROSS REFERENCE GUIDE 3.1 DRAM D ensity 256K X 1 F. P a g e KM 41C 256 TC 51256 X 1 X 4 4M X 1 X 4 , 1 6M To sh iba M od e X 4 1M Sam su ng Org. H ita ch i Fu jitsu HM 51256 M B81256 NEC /iP D 4 1 2 5 6 N ib b le KM 41C 257


    OCR Scan     		PDF 416C256 14800A 14900A 514170B 514280B KM23C16000G KM23C16100G KM23C16000FP KM23C16100FP HN624017FB K93C46 93cs46n MB832001 hn62308 41C1000 93C46LN 41464 hn623257 HM63832 DT71256

    TC55B8128

    Abstract: KM23C4000AG TC534000AF HN62308BP TC551632 hitachi cross mb83 68512U HITACHI 64k DRAM TC55B4256
    Text: MEMORY ICs CROSS REFERENCE GUIDE 3. CROSS REFERENCE GUIDE 3.1 DRAM D ensity 2 56 K 1M Org. x1 Toshiba F Page T C 51256 N ib b le K M 4 1C 2 5 7 T C 51257 H ita ch i H M 51 2 5 6 — F u jitsu M B 8 12 5 6 M B 8 12 5 7 NEC /P D 41256 — Oki M S M 5 1C 2 5 6


    OCR Scan     		PDF TC511001 TC514101 514170B 514280B TC5316200P KM2X16100 KM23C16000G KM23C16100G KM23C16000FP KM23C16100FP TC55B8128 KM23C4000AG TC534000AF HN62308BP TC551632 hitachi cross mb83 68512U HITACHI 64k DRAM TC55B4256

    TC5816FT

    Abstract: TC5332410F TC5316200CP TC531621 TC5310
    Text: CMOS Flash E2PROM Capacity 1MBit flash X6 Max. Power Dissipation mW Power Supply Max. Accès» Organization Time(ns) V p p (V) Voc(V) Typ» No. Wiita/Erase Standby Read Operating Write/Erase Temperature Method 600mil DIP •TC58F010F-10, 12 525mil SOP •TC58F010FT10, 12


    OCR Scan     		PDF TC58F010P-10, 600mil 525mil TC58F010F-10, TC58F010FT10, TC58F010TR-10, TC58F010T-10, TC58F4000P-12, TC58F4000F-12, 450mi! TC5816FT TC5332410F TC5316200CP TC531621 TC5310

    203d6

    Abstract: TC531001CP icf cp 3A11 TC531001CF TC5310
    Text: IH BIT 128K WORD x 8 BIT CMOS MASK ROM SILICON GATE CMOS DESCRIPTION The T C 5 31001CP/CF is a 1,048,576 bits read only memory organized as 131,072 w o rds by 8 bits with a low bit cost, thus being suitable for use in program m e m o r y of m i c r o ­


    OCR Scan     		PDF TC531001CP/CF 120ns 150ns 150ns TC531001CP/CF-12/15 DIP32-P-600) 203d6 TC531001CP icf cp 3A11 TC531001CF TC5310