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    SIS406DN Price and Stock

    Vishay Siliconix SIS406DN-T1-GE3

    MOSFET N-CH 30V 9A PPAK1212-8
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SIS406DN-T1-GE3 Cut Tape 10,739 1
    • 1 $1.19
    • 10 $0.748
    • 100 $1.19
    • 1000 $0.34642
    • 10000 $0.34642
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    SIS406DN-T1-GE3 Digi-Reel 10,739 1
    • 1 $1.19
    • 10 $0.748
    • 100 $1.19
    • 1000 $0.34642
    • 10000 $0.34642
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    SIS406DN-T1-GE3 Reel 6,000 3,000
    • 1 -
    • 10 -
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    • 1000 -
    • 10000 $0.30143
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    Vishay Intertechnologies SIS406DN-T1-GE3

    N-CHANNEL 30-V (D-S) MOSFET - Tape and Reel (Alt: SIS406DN-T1-GE3)
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    Avnet Americas SIS406DN-T1-GE3 Reel 17 Weeks 3,000
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    • 10000 $0.27163
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    Mouser Electronics SIS406DN-T1-GE3 111,248
    • 1 $0.78
    • 10 $0.567
    • 100 $0.257
    • 1000 $0.257
    • 10000 $0.256
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    Arrow Electronics SIS406DN-T1-GE3 Cut Strips 2 17 Weeks 1
    • 1 $0.054
    • 10 $0.054
    • 100 $0.054
    • 1000 $0.054
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    Newark SIS406DN-T1-GE3 Cut Tape 3,532 1
    • 1 $0.852
    • 10 $0.694
    • 100 $0.464
    • 1000 $0.464
    • 10000 $0.464
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    SIS406DN-T1-GE3 Reel 3,000
    • 1 $0.361
    • 10 $0.361
    • 100 $0.361
    • 1000 $0.361
    • 10000 $0.326
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    Bristol Electronics SIS406DN-T1-GE3 2,743
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    SIS406DN-T1-GE3 917
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    Quest Components SIS406DN-T1-GE3 2,194
    • 1 $0.378
    • 10 $0.378
    • 100 $0.1701
    • 1000 $0.1134
    • 10000 $0.1134
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    SIS406DN-T1-GE3 733
    • 1 $0.454
    • 10 $0.454
    • 100 $0.2043
    • 1000 $0.1362
    • 10000 $0.1362
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    TTI SIS406DN-T1-GE3 Reel 3,000 3,000
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    • 10000 $0.253
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    TME SIS406DN-T1-GE3 2,984 1
    • 1 $0.785
    • 10 $0.706
    • 100 $0.561
    • 1000 $0.524
    • 10000 $0.524
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    EBV Elektronik SIS406DN-T1-GE3 18 Weeks 3,000
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    SIS406DN Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SIS406DN-T1-GE3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 30V 9A 1212-8 PPAK Original PDF

    SIS406DN Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: New Product SiS406DN Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 30 ID (A) 0.011 at VGS = 10 V 14 0.0145 at VGS = 4.5 V 12.2 • • • • Halogen-free TrenchFET Power MOSFET PWM Optimized New Low Thermal Resistance PowerPAK®


    Original     		PDF SiS406DN SiS406DN-T1-GE3 11-Mar-11

    AN609

    Abstract: SiS406DN
    Text: SiS406DN_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/Tank and Cauer/Filter configurations are included. When implemented in P-Spice,


    Original     		PDF SiS406DN AN609, 16-Jul-08 AN609

    Untitled

    Abstract: No abstract text available
    Text: New Product SiS406DN Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 30 ID (A) 0.011 at VGS = 10 V 14 0.0145 at VGS = 4.5 V 12.2 • • • • Halogen-free TrenchFET Power MOSFET PWM Optimized New Low Thermal Resistance PowerPAK®


    Original     		PDF SiS406DN SiS406DN-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: New Product SiS406DN Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 30 ID (A) 0.011 at VGS = 10 V 14 0.0145 at VGS = 4.5 V 12.2 • • • • Halogen-free TrenchFET Power MOSFET PWM Optimized New Low Thermal Resistance PowerPAK®


    Original     		PDF SiS406DN SiS406DN-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    SiS406DN

    Abstract: siliconix application notes
    Text: SPICE Device Model SiS406DN Vishay Siliconix N-Channel 30-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the - 55 °C to 125 °C Temperature Range


    Original     		PDF SiS406DN S-82142 15-Sep-08 siliconix application notes

    Untitled

    Abstract: No abstract text available
    Text: New Product SiS406DN Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 30 ID (A) 0.011 at VGS = 10 V 14 0.0145 at VGS = 4.5 V 12.2 • • • • Halogen-free TrenchFET Power MOSFET PWM Optimized New Low Thermal Resistance PowerPAK®


    Original     		PDF SiS406DN SiS406DN-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    SiS406DN

    Abstract: No abstract text available
    Text: SPICE Device Model SiS406DN Vishay Siliconix N-Channel 30-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the - 55 °C to 125 °C Temperature Range


    Original     		PDF SiS406DN 18-Jul-08

    SiS406DN

    Abstract: sis406dn-t1-ge3
    Text: New Product SiS406DN Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 30 ID (A) 0.011 at VGS = 10 V 14 0.0145 at VGS = 4.5 V 12.2 • • • • Halogen-free TrenchFET Power MOSFET PWM Optimized New Low Thermal Resistance PowerPAK®


    Original     		PDF SiS406DN SiS406DN-T1-GE3 18-Jul-08

    Untitled

    Abstract: No abstract text available
    Text: New Product SiS406DN Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 30 ID (A) 0.011 at VGS = 10 V 14 0.0145 at VGS = 4.5 V 12.2 • • • • Halogen-free TrenchFET Power MOSFET PWM Optimized New Low Thermal Resistance PowerPAK®


    Original     		PDF SiS406DN SiS406DN-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    Untitled

    Abstract: No abstract text available
    Text: SPICE Device Model SiS406DN www.vishay.com Vishay Siliconix N-Channel 30 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C


    Original     		PDF SiS406DN 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    NPCE781BA0DX

    Abstract: nuvoton NPCE781BA0DX 92HD79B1a5 92HD79B1 NPCE781 TPS51611 NPCE781B UP7534BRA8 npce781ba G7922R61U
    Text: 5 4 3 2 1 D D Berry DG15 Discrete/UMA Schematics Document Arrandale Intel PCH C C 2010-02-03 REV : A00 DY :None Installed UMA:UMA platform installed PARK:DIS PARK platform installed M96:DIS M96 platform installed VRAM_1G:VRAM 128M*16 installed Colay :Manual modify BOM


    Original     		PDF 512MB 64Mx16b C995R GPIO45 650ms NPCE781BA0DX nuvoton NPCE781BA0DX 92HD79B1a5 92HD79B1 NPCE781 TPS51611 NPCE781B UP7534BRA8 npce781ba G7922R61U

    si7121

    Abstract: Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836
    Text: V ishay I ntertechnology, I nc . MOSFETs - Comprehensive Power MOSFET Technology Range I INNOVAT AND TEC O L OGY Vishay Siliconix N HN Power mosfets O 19 62-2012 Low to High Voltage Power MOSFETs ChipFET P o w e r PA K ® P o l a r PA K ® P o w e r PA I R ®


    Original     		PDF Mediu33-4-9337-2727 VMN-SG2127-1210 si7121 Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836

    SCD1U50V3KX-GP

    Abstract: SC10U25V6KX-1GP G547F2 SC1U50V5ZY-1-GP SRN33J-7-GP SC10U6D3V3MX-GP SIS412DN-T1-GE3-GP 200KR2F-L-GP SC1U25V3KX-1-GP 10KR2F-2-GP
    Text: 5 4 3 2 1 D D SW 1 10 1 EJECT_BTN 3 5 2 4 SW -TACT-119-GP 62.40009.671 62.40012.101 C C B B A A mini BD Wistron Corporation 21F, 88, Sec.1, Hsin Tai W u Rd., Hsichih, Taipei Hsien 221, Taiwan, R.O.C. Title ODD EJT BTN Size Document Number Rev -2 JM41_MINI_BD


    Original     		PDF -TACT-119-GP SKT-USB-295-GP G547F2P81U-GP SC4D7U16V5ZY-GP SCD1U50V3KX-GP 00PAD STFT236BR48H172-GP SCD1U50V3KX-GP SC10U25V6KX-1GP G547F2 SC1U50V5ZY-1-GP SRN33J-7-GP SC10U6D3V3MX-GP SIS412DN-T1-GE3-GP 200KR2F-L-GP SC1U25V3KX-1-GP 10KR2F-2-GP

    Diode SOT-23 marking 15d

    Abstract: SI4210 si4812b SI-4102 SI7149DP SiM400 si4932 si7135 SiB914 SI4477
    Text: V ISHAY INTERTECHN O L O G Y , INC . M O S F ET s LITTLE F O O T LITTLE F O O T ® P l u s Tr e n c h F E T ® Sk yFE T® Tu r b o F E T ® ChipFE T® P o w e r PA K ® P o l a r PA K ® P o w e r PA I R w w w. v i s h a y. c o m Selector Guide low-voltage Power MOSFETs


    Original     		PDF Diod92 VMN-SG2127-0911 Diode SOT-23 marking 15d SI4210 si4812b SI-4102 SI7149DP SiM400 si4932 si7135 SiB914 SI4477