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    SIRA10DP Price and Stock

    Vishay Siliconix SIRA10DP-T1-GE3

    MOSFET N-CH 30V 60A PPAK SO-8
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SIRA10DP-T1-GE3 Digi-Reel 7,737 1
    • 1 $1.25
    • 10 $0.839
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    • 1000 $0.43321
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    SIRA10DP-T1-GE3 Cut Tape 7,737 1
    • 1 $1.25
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    • 100 $1.25
    • 1000 $0.43321
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    SIRA10DP-T1-GE3 Reel 6,000 3,000
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    • 10000 $0.375
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    RS SIRA10DP-T1-GE3 Bulk 3,000
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    Vishay Intertechnologies SIRA10DP-T1-GE3

    Trans MOSFET N-CH 30V 25A 8-Pin PowerPAK SO T/R - Tape and Reel (Alt: SIRA10DP-T1-GE3)
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    Avnet Americas SIRA10DP-T1-GE3 Reel 20 Weeks 3,000
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    Mouser Electronics SIRA10DP-T1-GE3 10,949
    • 1 $0.76
    • 10 $0.682
    • 100 $0.498
    • 1000 $0.421
    • 10000 $0.375
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    Verical SIRA10DP-T1-GE3 388 15
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    Arrow Electronics SIRA10DP-T1-GE3 Cut Strips 388 20 Weeks 1
    • 1 $0.5412
    • 10 $0.5197
    • 100 $0.4358
    • 1000 $0.3971
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    Newark SIRA10DP-T1-GE3 Reel 3,000
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    SIRA10DP-T1-GE3 Cut Tape 3,000
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    TTI SIRA10DP-T1-GE3 Reel 12,000 3,000
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    TME SIRA10DP-T1-GE3 3,000 1
    • 1 $0.78
    • 10 $0.701
    • 100 $0.557
    • 1000 $0.52
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    Avnet Asia SIRA10DP-T1-GE3 22 Weeks 3,000
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    EBV Elektronik SIRA10DP-T1-GE3 21 Weeks 3,000
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    SIRA10DP Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SIRA10DP-T1-GE3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 30V 60A SO-8 Original PDF

    SIRA10DP Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: New Product SiRA10DP Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) () (Max.) ID (A)a, g 0.0037 at VGS = 10 V 30g 0.0050 at VGS = 4.5 V 30g Qg (Typ.) 15.4 nC APPLICATIONS • High Power Density DC/DC PowerPAK SO-8


    Original     		PDF SiRA10DP SiRA10DP-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: SPICE Device Model SiRA10DP www.vishay.com Vishay Siliconix N-Channel 30 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C


    Original     		PDF SiRA10DP 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: SiRA10DP www.vishay.com Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) () (MAX.) ID (A) a, g 0.0037 at VGS = 10 V 60 g 0.0050 at VGS = 4.5 V g 60 Qg (TYP.) 15.4 nC PowerPAK SO-8 Single D 5 D 6 D 7 D 8 • TrenchFET® Gen IV power MOSFET


    Original     		PDF SiRA10DP SiRA10DP-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: New Product SiRA10DP Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) () (Max.) ID (A)a, g 0.0037 at VGS = 10 V 30g 0.0050 at VGS = 4.5 V 30g Qg (Typ.) 15.4 nC APPLICATIONS • High Power Density DC/DC PowerPAK SO-8


    Original     		PDF SiRA10DP SiRA10DP-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    SiRA10DP

    Abstract: No abstract text available
    Text: New Product SiRA10DP Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) () (Max.) ID (A)a, g 0.0037 at VGS = 10 V 30g 0.0050 at VGS = 4.5 V 30g Qg (Typ.) 15.4 nC APPLICATIONS • High Power Density DC/DC PowerPAK SO-8


    Original     		PDF SiRA10DP SiRA10DP-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    Untitled

    Abstract: No abstract text available
    Text: SiRA10DP www.vishay.com Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) () (MAX.) ID (A) a, g 0.0037 at VGS = 10 V 60 g 0.0050 at VGS = 4.5 V g 60 Qg (TYP.) 15.4 nC PowerPAK SO-8 Single D 5 D 6 D 7 D 8 • TrenchFET® Gen IV power MOSFET


    Original     		PDF SiRA10DP SiRA10DP-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: SiRA10DP_RC www.vishay.com Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter


    Original     		PDF SiRA10DP AN609, 2338m 7624u 2250m 2783m 2650m 8961m 8993u 17-Feb-12

    Untitled

    Abstract: No abstract text available
    Text: New Product SiRA10DP Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) () (Max.) ID (A)a, g 0.0037 at VGS = 10 V 30g 0.0050 at VGS = 4.5 V 30g Qg (Typ.) 15.4 nC APPLICATIONS • High Power Density DC/DC PowerPAK SO-8


    Original     		PDF SiRA10DP SiRA10DP-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    Untitled

    Abstract: No abstract text available
    Text: V i s h ay I n t e r t e c h n o l o g y, I n c . POWER MOSFETs MOSFETs – Ultra-Low RDS on with Next Generation Technology TrenchFET Gen IV New Breakthrough Technology Lowers On-Resistance Down to Just 0.00135 Ω at VGS = 4.5 V Key Benefits • Next-generation technology optimizes several key specifications:


    Original     		PDF SiZ916DT SiZ340DT SiZ914DT VMN-PT0306-1402

    PowerPAK 1212-8

    Abstract: mosfet so8 smd dip4 PowerPAK SO-8 CNY65 CROSS SISA12DN-T1-GE3 SMD-4 CNY66 CROSS VBT4045BP-E3 4 dip
    Text: 2005-2012:QuarkCatalogTempNew 9/20/12 4:25 PM Page 2005 25 Rectifiers, MOSFETs and Optocouplers RoHS ᭤ Innovative Products That Represent a Cross Section of Vishays Very Broad Portfolio ᭤ Products Selected for Their Versatility in Several Key Applications


    Original     		PDF VT1045BP-M3/4W VBT1045BP-E3/4W VFT1045BP-M3/4W VT2045BP-M3/4W VBT2045BP-E3/4W VFT2045BP-M3/4W VT3045BP-M3/4W VBT3045BP-E3/4W VFT3045BP-M3/4W VT4045BP-M3/4W PowerPAK 1212-8 mosfet so8 smd dip4 PowerPAK SO-8 CNY65 CROSS SISA12DN-T1-GE3 SMD-4 CNY66 CROSS VBT4045BP-E3 4 dip

    v0615a

    Abstract: No abstract text available
    Text: Vishay Intertechnology, Inc. Computer Stationary Computing One of the World’s Largest Manufacturers of www.vishay.com Discrete Semiconductors and Passive Components Computer Stationary Computing Servers 4 Embedded Systems 5 Solid-State Discs SSDs 6 UPS 7


    Original     		PDF J-STD-020 SC-70 WSL1206 VMN-MS6761-1212 v0615a

    si7121

    Abstract: Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836
    Text: V ishay I ntertechnology, I nc . MOSFETs - Comprehensive Power MOSFET Technology Range I INNOVAT AND TEC O L OGY Vishay Siliconix N HN Power mosfets O 19 62-2012 Low to High Voltage Power MOSFETs ChipFET P o w e r PA K ® P o l a r PA K ® P o w e r PA I R ®


    Original     		PDF Mediu33-4-9337-2727 VMN-SG2127-1210 si7121 Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836

    POWERPAK SO8

    Abstract: SIS32
    Text: V I S H AY I N T E R T E C H N O L O G Y, I N C . MOSFETs – Ultra-Low RDS on with Next Generation Technology AND TEC I INNOVAT O L OGY TrenchFET Gen IV N HN POWER MOSFETs O 19 62-2012 New Breakthrough Technology Lowers On-Resistance Down to Just 0.00135 Ω at VGS = 4.5 V


    Original     		PDF SiZ916DT VMN-PT0306-1209 POWERPAK SO8 SIS32

    SMD resistors codes

    Abstract: No abstract text available
    Text: Vishay Intertechnology, Inc. Computer Stationary Computing One of the World’s Largest Manufacturers of www.vishay.com Discrete Semiconductors and Passive Components Computer デスクトップPC サーバー 4 組み込み型システム 5 SSD（ソリッドステートディスク） 6


    Original     		PDF J-STD-020 SC-70 WSL1206 VMN-MS6792-1304-COSC SMD resistors codes