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    Vishay Siliconix SIR820DP-T1-GE3

    MOSFET N-CH 30V 40A PPAK SO-8
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    DigiKey SIR820DP-T1-GE3 Reel 3,000
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    • 10000 $0.54104
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    Vishay Intertechnologies SIR820DP-T1-GE3

    N-CHANNEL 30-V (D-S) MOSFET - Tape and Reel (Alt: SIR820DP-T1-GE3)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas SIR820DP-T1-GE3 Reel 19 Weeks 3,000
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    Mouser Electronics SIR820DP-T1-GE3
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    TTI SIR820DP-T1-GE3 Reel 3,000
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    TME SIR820DP-T1-GE3 3,000
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    EBV Elektronik SIR820DP-T1-GE3 17 Weeks 3,000
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    SIR820DP Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Type PDF
    SIR820DP-T1-GE3 Vishay Siliconix Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 30V 40A POWERPAKSO-8 Original PDF

    SIR820DP Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: SPICE Device Model SiR820DP www.vishay.com Vishay Siliconix N-Channel 30 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the


    Original     		PDF SiR820DP 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: New Product SiR820DP Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () ID (A)a 0.0030 at VGS = 10 V 40g 0.0038 at VGS = 4.5 V 40g VDS (V) 30 Qg (Typ.) 28.6 nC • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET


    Original     		PDF SiR820DP 2002/95/EC SiR820DP-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: New Product SiR820DP Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () ID (A)a 0.0030 at VGS = 10 V 40g 0.0038 at VGS = 4.5 V 40g VDS (V) 30 Qg (Typ.) 28.6 nC • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET


    Original     		PDF SiR820DP 2002/95/EC SiR820DP-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: SPICE Device Model SiR820DP Vishay Siliconix N-Channel 30 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the


    Original     		PDF SiR820DP 11-Mar-11

    15-Feb-10

    Abstract: 67845 BVDSS
    Text: New Product SiR820DP Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () ID (A)a 0.0030 at VGS = 10 V 40g 0.0038 at VGS = 4.5 V 40g VDS (V) 30 Qg (Typ.) 28.6 nC • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET


    Original     		PDF SiR820DP 2002/95/EC SiR820DP-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 15-Feb-10 67845 BVDSS

    Untitled

    Abstract: No abstract text available
    Text: SiR820DP_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,


    Original     		PDF SiR820DP AN609, 8508m 7985m 6464m 2139m 0587m 1192m 4722m 4249m

    Untitled

    Abstract: No abstract text available
    Text: New Product SiR820DP Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () ID (A)a 0.0030 at VGS = 10 V 40g 0.0038 at VGS = 4.5 V 40g VDS (V) 30 Qg (Typ.) 28.6 nC PowerPAK SO-8 • Halogen-free According to IEC 61249-2-21 Definition


    Original     		PDF SiR820DP 2002/95/EC SiR820DP-T1-GE3 11-Mar-11

    Untitled

    Abstract: No abstract text available
    Text: New Product SiR820DP Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () ID (A)a 0.0030 at VGS = 10 V 40g 0.0038 at VGS = 4.5 V 40g VDS (V) 30 Qg (Typ.) 28.6 nC • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET


    Original     		PDF SiR820DP 2002/95/EC SiR820DP-T1-GE3 11-Mar-11

    si7121

    Abstract: Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836
    Text: V ishay I ntertechnology, I nc . MOSFETs - Comprehensive Power MOSFET Technology Range I INNOVAT AND TEC O L OGY Vishay Siliconix N HN Power mosfets O 19 62-2012 Low to High Voltage Power MOSFETs ChipFET P o w e r PA K ® P o l a r PA K ® P o w e r PA I R ®


    Original     		PDF Mediu33-4-9337-2727 VMN-SG2127-1210 si7121 Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836