Untitled
Abstract: No abstract text available
Text: SiR484DP Vishay Siliconix N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a, g 0.0083 at VGS = 10 V 20 0.0115 at VGS = 4.5 V 20 VDS (V) 20 Qg (Typ.) 7.1 nC PowerPAK SO-8 S 6.15 mm S D APPLICATIONS S 3 • Notebook CPU Core - High-Side Switch
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SiR484DP
SiR484DP-T1-GE3
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: SiR484DP Vishay Siliconix N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a, g 0.0083 at VGS = 10 V 20 0.0115 at VGS = 4.5 V 20 VDS (V) 20 Qg (Typ.) 7.1 nC PowerPAK SO-8 S 6.15 mm S D APPLICATIONS S 3 • Notebook CPU Core - High-Side Switch
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SiR484DP
SiR484DP-T1-GE3
18-Jul-08
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Untitled
Abstract: No abstract text available
Text: SiR484DP Vishay Siliconix N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a, g 0.0083 at VGS = 10 V 20 0.0115 at VGS = 4.5 V 20 VDS (V) 20 Qg (Typ.) 7.1 nC PowerPAK SO-8 S 6.15 mm S D APPLICATIONS S 3 • Notebook CPU Core - High-Side Switch
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SiR484DP
SiR484DP-T1-GE3
11-Mar-11
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Untitled
Abstract: No abstract text available
Text: SiR484DP Vishay Siliconix N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) ID (A)a, g RDS(on) (Ω) 20 0.0083 at VGS = 10 V 20 0.0115 at VGS = 4.5 V 20 Qg (Typ.) 7.1 nC PowerPAK SO-8 S 6.15 mm S D APPLICATIONS S 3 • Notebook CPU Core - High-Side Switch
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SiR484DP
SiR484DP-T1-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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Untitled
Abstract: No abstract text available
Text: SiR484DP Vishay Siliconix N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a, g 0.0083 at VGS = 10 V 20 0.0115 at VGS = 4.5 V 20 VDS (V) 20 Qg (Typ.) 7.1 nC PowerPAK SO-8 S 6.15 mm S D APPLICATIONS S 3 • Notebook CPU Core - High-Side Switch
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SiR484DP
SiR484DP-T1-GE3
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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mosfet 4812
Abstract: 4812 4812 mosfet 4520 mosfet AN609 527-01
Text: SiR484DP_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/Tank and Cauer/Filter configurations are included. When implemented in P-Spice,
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SiR484DP
AN609,
31-Oct-08
mosfet 4812
4812
4812 mosfet
4520 mosfet
AN609
527-01
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Untitled
Abstract: No abstract text available
Text: SiR484DP Vishay Siliconix N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a, g 0.0083 at VGS = 10 V 20 0.0115 at VGS = 4.5 V 20 VDS (V) 20 Qg (Typ.) 7.1 nC PowerPAK SO-8 S 6.15 mm S D APPLICATIONS S 3 • Notebook CPU Core - High-Side Switch
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SiR484DP
SiR484DP-T1-GE3
11-Mar-11
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Untitled
Abstract: No abstract text available
Text: SPICE Device Model SiR484DP www.vishay.com Vishay Siliconix N-Channel 20 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C
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SiR484DP
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: SPICE Device Model SiR484DP Vishay Siliconix N-Channel 20-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the - 55 °C to 125 °C Temperature Range
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SiR484DP
18-Jul-08
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Untitled
Abstract: No abstract text available
Text: SiR484DP Vishay Siliconix N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a, g 0.0083 at VGS = 10 V 20 0.0115 at VGS = 4.5 V 20 VDS (V) 20 Qg (Typ.) 7.1 nC PowerPAK SO-8 S 6.15 mm S D APPLICATIONS S 3 • Notebook CPU Core - High-Side Switch
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SiR484DP
SiR484DP-T1-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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FSQ510 Equivalent
Abstract: BTA12 6008 bta16 6008 ZIGBEE interface with AVR ATmega16 Precision triac control thermostat thyristor t 558 f eupec gw 5819 diode transistor a564 A564 transistor BSM25GP120 b2
Text: SEMICONDUCTORS MCU/MPU/DSP Atmel. . . . . . . . . 167, 168, 169, 170, 171, 172 Blackhawk. . . . . . . . . . . . . . . . . . . . . . . . . 173 Cyan . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 174 Cypress. . . . . . . . . . . . . . . 175, 176, 177, 178
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GP-20)
FSQ510 Equivalent
BTA12 6008
bta16 6008
ZIGBEE interface with AVR ATmega16
Precision triac control thermostat
thyristor t 558 f eupec
gw 5819 diode
transistor a564
A564 transistor
BSM25GP120 b2
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si7121
Abstract: Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836
Text: V ishay I ntertechnology, I nc . MOSFETs - Comprehensive Power MOSFET Technology Range I INNOVAT AND TEC O L OGY Vishay Siliconix N HN Power mosfets O 19 62-2012 Low to High Voltage Power MOSFETs ChipFET P o w e r PA K ® P o l a r PA K ® P o w e r PA I R ®
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Mediu33-4-9337-2727
VMN-SG2127-1210
si7121
Si4914B
SI-4102
SI4599
Si4483A
sir166
irfd120
si7949
si4459a
SIR836
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Diode SOT-23 marking 15d
Abstract: SI4210 si4812b SI-4102 SI7149DP SiM400 si4932 si7135 SiB914 SI4477
Text: V ISHAY INTERTECHN O L O G Y , INC . M O S F ET s LITTLE F O O T LITTLE F O O T ® P l u s Tr e n c h F E T ® Sk yFE T® Tu r b o F E T ® ChipFE T® P o w e r PA K ® P o l a r PA K ® P o w e r PA I R w w w. v i s h a y. c o m Selector Guide low-voltage Power MOSFETs
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Diod92
VMN-SG2127-0911
Diode SOT-23 marking 15d
SI4210
si4812b
SI-4102
SI7149DP
SiM400
si4932
si7135
SiB914
SI4477
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