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    SIR424DP Search Results

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    SIR424DP Price and Stock

    Vishay Siliconix SIR424DP-T1-GE3

    MOSFET N-CH 20V 30A PPAK SO-8
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SIR424DP-T1-GE3 Digi-Reel 4,787 1
    • 1 $1.15
    • 10 $0.773
    • 100 $1.15
    • 1000 $0.39632
    • 10000 $0.39632
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    SIR424DP-T1-GE3 Cut Tape 4,787 1
    • 1 $1.15
    • 10 $0.773
    • 100 $1.15
    • 1000 $0.39632
    • 10000 $0.39632
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    SIR424DP-T1-GE3 Reel 3,000 3,000
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 $0.3375
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    RS SIR424DP-T1-GE3 Bulk 20
    • 1 -
    • 10 -
    • 100 $0.86
    • 1000 $0.86
    • 10000 $0.86
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    Vishay Intertechnologies SIR424DP-T1-GE3

    Trans MOSFET N-CH 20V 23.4A 8-Pin PowerPAK SO T/R - Tape and Reel (Alt: SIR424DP-T1-GE3)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas SIR424DP-T1-GE3 Reel 21 Weeks 3,000
    • 1 -
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    • 1000 -
    • 10000 $0.3321
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    Mouser Electronics SIR424DP-T1-GE3 17,968
    • 1 $0.9
    • 10 $0.736
    • 100 $0.538
    • 1000 $0.396
    • 10000 $0.338
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    Verical SIR424DP-T1-GE3 3,000 3,000
    • 1 -
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    • 100 -
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    • 10000 $0.3655
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    Arrow Electronics SIR424DP-T1-GE3 3,000 21 Weeks 3,000
    • 1 -
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    • 100 -
    • 1000 -
    • 10000 $0.3669
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    Newark SIR424DP-T1-GE3 Cut Tape 15,105 5
    • 1 $0.978
    • 10 $0.814
    • 100 $0.651
    • 1000 $0.651
    • 10000 $0.651
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    SIR424DP-T1-GE3 Reel 3,000
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 $0.451
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    TTI SIR424DP-T1-GE3 Reel 6,000 3,000
    • 1 -
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    • 1000 -
    • 10000 $0.344
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    TME SIR424DP-T1-GE3 3,000
    • 1 -
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    • 10000 $0.536
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    Chip-Germany GmbH SIR424DP-T1-GE3 77
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    EBV Elektronik SIR424DP-T1-GE3 22 Weeks 3,000
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    VIS SIR424DP-T1-GE3

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Bristol Electronics SIR424DP-T1-GE3 132
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    Vishay Huntington SIR424DP-T1-GE3

    MOSFET N-CH 20V 30A PPAK SO-8
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Win Source Electronics SIR424DP-T1-GE3 2,380
    • 1 -
    • 10 -
    • 100 $0.5382
    • 1000 $0.3588
    • 10000 $0.3588
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    SIR424DP Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SIR424DP-T1-GE3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 20V 30A PPAK 8SOIC Original PDF

    SIR424DP Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    AN609

    Abstract: No abstract text available
    Text: SiR424DP_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,


    Original     		PDF SiR424DP AN609, 04-Jan-10 AN609

    Untitled

    Abstract: No abstract text available
    Text: SiR424DP Vishay Siliconix N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) (Ω) ID (A) 0.0055 at VGS = 10 V 30a 0.0074 at VGS = 4.5 V 30a • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • 100 % Rg Tested


    Original     		PDF SiR424DP 2002/95/EC SiR424DP-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: SPICE Device Model SiR424DP www.vishay.com Vishay Siliconix N-Channel 20 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C


    Original     		PDF SiR424DP 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    diode 1775 B

    Abstract: s091
    Text: SPICE Device Model SiR424DP Vishay Siliconix N-Channel 20 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C


    Original     		PDF SiR424DP 18-Jul-08 diode 1775 B s091

    Untitled

    Abstract: No abstract text available
    Text: SiR424DP Vishay Siliconix N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) (Ω) ID (A) 0.0055 at VGS = 10 V 30a 0.0074 at VGS = 4.5 V 30a • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • 100 % Rg Tested


    Original     		PDF SiR424DP 2002/95/EC SiR424DP-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    SiR424DP-T1-GE3

    Abstract: 0210TC
    Text: SiR424DP Vishay Siliconix N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) (Ω) ID (A) 0.0055 at VGS = 10 V 30a 0.0074 at VGS = 4.5 V 30a • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • 100 % Rg Tested


    Original     		PDF SiR424DP 2002/95/EC SiR424DP-T1-GE3 11-Mar-11 0210TC

    SiR424DP-T1-GE3

    Abstract: No abstract text available
    Text: SiR424DP Vishay Siliconix N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) (Ω) ID (A) 0.0055 at VGS = 10 V 30a 0.0074 at VGS = 4.5 V 30a • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • 100 % Rg Tested


    Original     		PDF SiR424DP 2002/95/EC SiR424DP-T1-GE3 18-Jul-08

    Untitled

    Abstract: No abstract text available
    Text: SiR424DP Vishay Siliconix N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) (Ω) ID (A) 0.0055 at VGS = 10 V 30a 0.0074 at VGS = 4.5 V 30a • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • 100 % Rg Tested


    Original     		PDF SiR424DP 2002/95/EC SiR424DP-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: SiR424DP Vishay Siliconix N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) (Ω) ID (A) 0.0055 at VGS = 10 V 30a 0.0074 at VGS = 4.5 V 30a • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • 100 % Rg Tested


    Original     		PDF SiR424DP 2002/95/EC SiR424DP-T1-GE3 11-Mar-11

    Untitled

    Abstract: No abstract text available
    Text: SiR424DP Vishay Siliconix N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) (Ω) ID (A) 0.0055 at VGS = 10 V 30a 0.0074 at VGS = 4.5 V 30a • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • 100 % Rg Tested


    Original     		PDF SiR424DP 2002/95/EC SiR424DP-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    FSQ510 Equivalent

    Abstract: BTA12 6008 bta16 6008 ZIGBEE interface with AVR ATmega16 Precision triac control thermostat thyristor t 558 f eupec gw 5819 diode transistor a564 A564 transistor BSM25GP120 b2
    Text: SEMICONDUCTORS MCU/MPU/DSP Atmel. . . . . . . . . 167, 168, 169, 170, 171, 172 Blackhawk. . . . . . . . . . . . . . . . . . . . . . . . . 173 Cyan . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 174 Cypress. . . . . . . . . . . . . . . 175, 176, 177, 178


    Original     		PDF GP-20) FSQ510 Equivalent BTA12 6008 bta16 6008 ZIGBEE interface with AVR ATmega16 Precision triac control thermostat thyristor t 558 f eupec gw 5819 diode transistor a564 A564 transistor BSM25GP120 b2

    Untitled

    Abstract: No abstract text available
    Text: V i s h ay I n tertec h n olo g y, I n c . Power MOSFETs M O S F ET s Tre nchFET G e n III Key features and Benefits Low conduction and switching losses enable increased efficiency and reduced power consumption • Record-breaking maximum on-resistance at VGS = 4.5 V rating


    Original     		PDF VMN-PT0105-1007

    si7121

    Abstract: Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836
    Text: V ishay I ntertechnology, I nc . MOSFETs - Comprehensive Power MOSFET Technology Range I INNOVAT AND TEC O L OGY Vishay Siliconix N HN Power mosfets O 19 62-2012 Low to High Voltage Power MOSFETs ChipFET P o w e r PA K ® P o l a r PA K ® P o w e r PA I R ®


    Original     		PDF Mediu33-4-9337-2727 VMN-SG2127-1210 si7121 Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836

    LT3791IFE-1

    Abstract: No abstract text available
    Text: LT3791-1 60V 4-Switch Synchronous Buck-Boost Controller Features Description 4-Switch Single Inductor Architecture Allows VIN Above, Below or Equal to VOUT n Synchronous Switching: Up to 98.5% Efficiency n Wide V Range: 4.7V to 60V IN n 2% Output Voltage Accuracy: 1.2V ≤ V


    Original     		PDF LT3791-1 38-Lead QFN-16, MSOP-16E LT3756-2 LT3596 300mA QFN-52 LT3743 QFN-28, LT3791IFE-1

    LT3791-1

    Abstract: 35HVT100M LT3791FE-1 LT37911 suncon 4.7uf capacitor 35HVT220M IRf 48 MOSFET LT3791IFE SUNCON capacitor 12v 5A voltage regulator
    Text: LT3791-1 60V 4-Switch Synchronous Buck-Boost Controller Features Description 4-Switch Single Inductor Architecture Allows VIN Above, Below or Equal to VOUT n Synchronous Switching: Up to 98.5% Efficiency n Wide V Range: 4.7V to 60V IN n 2% Output Voltage Accuracy: 1.2V ≤ V


    Original     		PDF LT3791-1 n38-Lead QFN-16, MSOP-16E LT3756-2 LT3596 LT3743 300mA QFN-52 QFN-28, 35HVT100M LT3791FE-1 LT37911 suncon 4.7uf capacitor 35HVT220M IRf 48 MOSFET LT3791IFE SUNCON capacitor 12v 5A voltage regulator

    Diode SOT-23 marking 15d

    Abstract: SI4210 si4812b SI-4102 SI7149DP SiM400 si4932 si7135 SiB914 SI4477
    Text: V ISHAY INTERTECHN O L O G Y , INC . M O S F ET s LITTLE F O O T LITTLE F O O T ® P l u s Tr e n c h F E T ® Sk yFE T® Tu r b o F E T ® ChipFE T® P o w e r PA K ® P o l a r PA K ® P o w e r PA I R w w w. v i s h a y. c o m Selector Guide low-voltage Power MOSFETs


    Original     		PDF Diod92 VMN-SG2127-0911 Diode SOT-23 marking 15d SI4210 si4812b SI-4102 SI7149DP SiM400 si4932 si7135 SiB914 SI4477