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    SIHS36N50D Price and Stock

    Vishay Siliconix SIHS36N50D-GE3

    D SERIES POWER MOSFET SUPER-247,
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    DigiKey SIHS36N50D-GE3 Tube 523 1
    • 1 $7.77
    • 10 $7.77
    • 100 $4.50233
    • 1000 $3.3
    • 10000 $3.3
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    Vishay Siliconix SIHS36N50D-E3

    MOSFET N-CH 500V 36A SUPER-247
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    DigiKey SIHS36N50D-E3 Tube 500
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    Vishay Intertechnologies SIHS36N50D-E3

    Mosfet, N-Ch, 500V, 36A, 150Deg C, 446W; Channel Type:N Channel; Drain Source Voltage Vds:500V; Continuous Drain Current Id:36A; Transistor Mounting:Through Hole; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:3V Rohs Compliant: Yes |Vishay SIHS36N50D-E3
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    Newark SIHS36N50D-E3 Bulk 1
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    Vishay Intertechnologies SIHS36N50D-GE3

    Mosfet, N-Ch, 500V, 36A, Super-247 Rohs Compliant: Yes |Vishay SIHS36N50D-GE3
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    Newark SIHS36N50D-GE3 Bulk 1
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    TME SIHS36N50D-GE3 1
    • 1 $7.5
    • 10 $6.75
    • 100 $5.97
    • 1000 $5.01
    • 10000 $5.01
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    Vishay Intertechnologies SIHS36N50DE3

    D SERIES POWER MOSFET Power Field-Effect Transistor, 36A I(D), 500V, 0.13ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-274AA
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    ComSIT USA SIHS36N50DE3 400
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    SIHS36N50D Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SIHS36N50D-E3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 500V 36A SUPER-247 Original PDF
    SIHS36N50D-GE3 Vishay Siliconix D SERIES POWER MOSFET SUPER-247, Original PDF

    SIHS36N50D Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    SIHS36N50D

    Abstract: No abstract text available
    Text: SiHS36N50D www.vishay.com Vishay Siliconix D Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Optimal Design - Low Area specific On-Resistance - Low Input Capacitance (Ciss) - Reduced Capacitive Switching Losses - High Body Diode Ruggedness


    Original     		SiHS36N50D Super-247 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 PDF

    Untitled

    Abstract: No abstract text available
    Text: SiHS36N50D_RC www.vishay.com Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter


    Original     		SiHS36N50D AN609, 0906m 2247m 0347m 6500m 9643m 5662m 07-May-12 PDF

    Untitled

    Abstract: No abstract text available
    Text: SiHS36N50D www.vishay.com Vishay Siliconix D Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Optimal Design - Low Area specific On-Resistance - Low Input Capacitance (Ciss) - Reduced Capacitive Switching Losses - High Body Diode Ruggedness


    Original     		SiHS36N50D Super-247 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 PDF

    Untitled

    Abstract: No abstract text available
    Text: SiHS36N50D www.vishay.com Vishay Siliconix D Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Optimal Design - Low Area specific On-Resistance - Low Input Capacitance (Ciss) - Reduced Capacitive Switching Losses - High Body Diode Ruggedness


    Original     		SiHS36N50D Super-247 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    IRF740BPBF

    Abstract: mosfets for lcd tv SiHD3N50D IRF730BPBF SiHF8N50D SiHG22N50
    Text: V I S H AY I N T E R T E C H N O L O G Y, I N C . AND TEC I INNOVAT O L OGY D Series N HN HIGH-VOLTAGE POWER MOSFETs O 19 62-2012 MOSFETs - Increased Switching Speed High-Performance 400 V, 500 V, and 600 V MOSFETs Feature “Stripe” vs. “Cellular” Geometry Technology


    Original     		O-220 O-251) O-220FP O-247AC IRF740BPBF mosfets for lcd tv SiHD3N50D IRF730BPBF SiHF8N50D SiHG22N50 PDF

    AN844

    Abstract: No abstract text available
    Text: VISHAY SILICONIX www.vishay.com Power MOSFETs Application Note - AN844 How to Select the Right MOSFET for Power Factor Correction Applications Power factor is the ratio of the real power P = Watts to the apparent power (VA = Volt Ampere); the goal is to achieve a power


    Original     		AN844 SiHx15N65E SiHx22N65E SiHx24N65E SiHx5N50D SiHx8N50D SiHx3N50D SiHx12N50C AN844 PDF

    si7121

    Abstract: Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836
    Text: V ishay I ntertechnology, I nc . MOSFETs - Comprehensive Power MOSFET Technology Range I INNOVAT AND TEC O L OGY Vishay Siliconix N HN Power mosfets O 19 62-2012 Low to High Voltage Power MOSFETs ChipFET P o w e r PA K ® P o l a r PA K ® P o w e r PA I R ®


    Original     		Mediu33-4-9337-2727 VMN-SG2127-1210 si7121 Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836 PDF

    Untitled

    Abstract: No abstract text available
    Text: Vishay Intertechnology, Inc. HIGH-VOLTAGE MOSFETs E SERIES HIGH VOLTAGE 500 V, 600 V, and 650 V Super Junction N-Channel MOSFETs D SERIES HIGH VOLTAGE 400 V, 500 V, and 600 V Stripe Technology N-Channel MOSFETs www.vishay.com V I S H AY I N T E R T E C H N O L O G Y, I N C .


    Original     		SiHx12N50E SiHx15N50E SiHx20N50E SiHx25N50E O-247 O-247AC O-220 O-220 O-220AB O-263) PDF