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    Vishay Siliconix SIHF634S-GE3

    SIHF634S-GE3 N-channel MOSFET Transistor, 8.1 A, 250 V, 3-Pin D2PAK | Siliconix / Vishay SIHF634S-GE3
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    RS SIHF634S-GE3 Bulk 10
    • 1 -
    • 10 $0.99
    • 100 $0.94
    • 1000 $0.84
    • 10000 $0.84
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    Vishay Intertechnologies SIHF634STRR-GE3

    Transistor: N-MOSFET; unipolar; 250V; 5.1A; Idm: 32A; 74W
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TME SIHF634STRR-GE3 1
    • 1 $1.16
    • 10 $1.04
    • 100 $0.82
    • 1000 $0.75
    • 10000 $0.75
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    Vishay Intertechnologies SIHF634S-GE3

    Trans MOSFET N-CH 250V 8.1A 3-Pin TO-263 T/R (Alt: SIHF634S-GE3)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    EBV Elektronik SIHF634S-GE3 14 Weeks 50
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    SIHF634 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    IRF634N

    Abstract: IRF634NL IRF634NS SiHF634N SiHF634N-E3 SiHF634NS SiHF634NS-E3
    Text: IRF634N, IRF634NL, IRF634NS, SiHF634N, SiHF634NL, SiHF634NS Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V 250 RDS(on) (Ω) VGS = 10 V 0.435 Qg (Max.) (nC) 34 Qgs (nC) 6.5 Qgd (nC) 16 Configuration Single • • • • • • • • Advanced Process Technology


    Original     		PDF IRF634N, IRF634NL, IRF634NS, SiHF634N SiHF634NL SiHF634NS O-262) O-220 O-263) 18-Jul-08 IRF634N IRF634NL IRF634NS SiHF634N-E3 SiHF634NS-E3

    Untitled

    Abstract: No abstract text available
    Text: IRF634S, SiHF634S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V 250 RDS(on) () VGS = 10 V 0.45 Qg (Max.) (nC) 41 Qgs (nC) 6.5 Qgd (nC) 22 Configuration Single D DESCRIPTION D2PAK (TO-263) K G D • Halogen-free According to IEC 61249-2-21


    Original     		PDF IRF634S, SiHF634S O-263) 2002/95/EC 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    IRF634

    Abstract: SiHF634 SiHF634-E3
    Text: IRF634, SiHF634 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 250 RDS(on) () VGS = 10 V RoHS* Qg (Max.) (nC) 41 • Fast Switching Qgs (nC) 6.5 • Ease of Paralleling 22 • Simple Drive Requirements Qgd (nC) Configuration


    Original     		PDF IRF634, SiHF634 2002/95/EC O-220AB O-220AB 11-Mar-11 IRF634 SiHF634-E3

    4538

    Abstract: AN609 IRF634 SiHF634
    Text: IRF634_RC, SiHF634_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,


    Original     		PDF IRF634 SiHF634 AN609, 12-Mar-10 4538 AN609

    Untitled

    Abstract: No abstract text available
    Text: IRF634S, SiHF634S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V 250 RDS(on) () VGS = 10 V 0.45 Qg (Max.) (nC) 41 Qgs (nC) 6.5 Qgd (nC) 22 Configuration Single D DESCRIPTION D2PAK (TO-263) K G D • Halogen-free According to IEC 61249-2-21


    Original     		PDF IRF634S, SiHF634S 2002/95/EC O-263) 11-Mar-11

    Untitled

    Abstract: No abstract text available
    Text: IRF634S, SiHF634S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition • Surface Mount • Available in Tape and Reel • Dynamic dV/dt Rating • Repetitive Avalanche Rated • Fast Switching


    Original     		PDF IRF634S, SiHF634S 2002/95/EC O-263) 18-Jul-08

    AN609

    Abstract: IRF634S SiHF634S
    Text: IRF634S_RC, SiHF634S_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,


    Original     		PDF IRF634S SiHF634S AN609, 6863m 8651m 0259m 9396m 3890m 1419m 6299m AN609

    Untitled

    Abstract: No abstract text available
    Text: IRF634S, SiHF634S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition • Surface Mount • Available in Tape and Reel • Dynamic dV/dt Rating • Repetitive Avalanche Rated • Fast Switching


    Original     		PDF IRF634S, SiHF634S 2002/95/EC O-263) 11-Mar-11

    4538

    Abstract: AN609 IRF634S SiHF634S
    Text: IRF634S_RC, SiHF634S_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,


    Original     		PDF IRF634S SiHF634S AN609, 12-Mar-10 4538 AN609

    SiHF634S

    Abstract: smd e3a IRF634S SiHF634S-E3 SMD-220 SMD DIODE marking AB
    Text: IRF634S, SiHF634S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • 250 RDS(on) (Ω) VGS = 10 V 0.45 Qg (Max.) (nC) 41 Qgs (nC) 6.5 Qgd (nC) 22 Configuration Single D Surface Mount Available in Tape and Reel Dynamic dV/dt Rating


    Original     		PDF IRF634S, SiHF634S SMD-220 SMD-220 18-Jul-08 smd e3a IRF634S SiHF634S-E3 SMD DIODE marking AB

    IRF634

    Abstract: SiHF634 SiHF634-E3
    Text: IRF634, SiHF634 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 250 RDS(on) (Ω) VGS = 10 V RoHS* Qg (Max.) (nC) 41 • Fast Switching Qgs (nC) 6.5 • Ease of Paralleling 22 • Simple Drive Requirements Qgd (nC) Configuration


    Original     		PDF IRF634, SiHF634 O-220 O-220 18-Jul-08 IRF634 SiHF634-E3

    smd diode marking 51

    Abstract: diode smd marking 51 SiHF634S
    Text: IRF634S, SiHF634S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • 250 RDS(on) (Ω) VGS = 10 V 0.45 Qg (Max.) (nC) 41 Qgs (nC) 6.5 Qgd (nC) 22 Configuration Single D Surface Mount Available in Tape and Reel Dynamic dV/dt Rating


    Original     		PDF IRF634S, SiHF634S SMD-220 12-Mar-07 smd diode marking 51 diode smd marking 51

    Untitled

    Abstract: No abstract text available
    Text: IRF634, SiHF634 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 250 RDS(on) () VGS = 10 V RoHS* Qg (Max.) (nC) 41 • Fast Switching Qgs (nC) 6.5 • Ease of Paralleling 22 • Simple Drive Requirements Qgd (nC) Configuration


    Original     		PDF IRF634, SiHF634 2002/95/EC O-220AB O-220AB 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A

    Untitled

    Abstract: No abstract text available
    Text: IRF634, SiHF634 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 250 RDS(on) () VGS = 10 V RoHS* Qg (Max.) (nC) 41 • Fast Switching Qgs (nC) 6.5 • Ease of Paralleling 22 • Simple Drive Requirements Qgd (nC) Configuration


    Original     		PDF IRF634, SiHF634 2002/95/EC O-220AB 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    Untitled

    Abstract: No abstract text available
    Text: IRF634, SiHF634 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 250 RDS(on) () VGS = 10 V RoHS* Qg (Max.) (nC) 41 • Fast Switching Qgs (nC) 6.5 • Ease of Paralleling 22 • Simple Drive Requirements Qgd (nC) Configuration


    Original     		PDF IRF634, SiHF634 2002/95/EC O-220AB 11-Mar-11

    Untitled

    Abstract: No abstract text available
    Text: IRF634N, IRF634NL, IRF634NS, SiHF634N, SiHF634NL, SiHF634NS Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V 250 RDS(on) (Ω) VGS = 10 V 0.435 Qg (Max.) (nC) 34 Qgs (nC) 6.5 Qgd (nC) 16 Configuration Single • • • • • • • • Advanced Process Technology


    Original     		PDF IRF634N, IRF634NL, IRF634NS, SiHF634N SiHF634NL SiHF634NS O-262) O-220 O-263) 12-Mar-07

    Untitled

    Abstract: No abstract text available
    Text: IRF634, SiHF634 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 250 RDS(on) () VGS = 10 V RoHS* Qg (Max.) (nC) 41 • Fast Switching Qgs (nC) 6.5 • Ease of Paralleling 22 • Simple Drive Requirements Qgd (nC) Configuration


    Original     		PDF IRF634, SiHF634 2002/95/EC O-220AB O-220AB 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A

    Untitled

    Abstract: No abstract text available
    Text: IRF634, SiHF634 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 250 RDS(on) () VGS = 10 V RoHS* Qg (Max.) (nC) 41 • Fast Switching Qgs (nC) 6.5 • Ease of Paralleling 22 • Simple Drive Requirements Qgd (nC) Configuration


    Original     		PDF IRF634, SiHF634 2002/95/EC O-220AB 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    1047 diode

    Abstract: No abstract text available
    Text: IRF634S, SiHF634S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V 250 RDS(on) () VGS = 10 V 0.45 Qg (Max.) (nC) 41 Qgs (nC) 6.5 Qgd (nC) 22 Configuration Single D DESCRIPTION D2PAK (TO-263) K G D • Halogen-free According to IEC 61249-2-21


    Original     		PDF IRF634S, SiHF634S 2002/95/EC O-263) 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 1047 diode

    Untitled

    Abstract: No abstract text available
    Text: IRF634, SiHF634 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 250 RDS(on) () VGS = 10 V RoHS* Qg (Max.) (nC) 41 • Fast Switching Qgs (nC) 6.5 • Ease of Paralleling 22 • Simple Drive Requirements Qgd (nC) Configuration


    Original     		PDF IRF634, SiHF634 2002/95/EC O-220AB O-220AB 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A

    Untitled

    Abstract: No abstract text available
    Text: IRF634, SiHF634 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 250 RDS(on) () VGS = 10 V RoHS* Qg (Max.) (nC) 41 • Fast Switching Qgs (nC) 6.5 • Ease of Paralleling 22 • Simple Drive Requirements Qgd (nC) Configuration


    Original     		PDF IRF634, SiHF634 2002/95/EC O-220AB O-220AB 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    Untitled

    Abstract: No abstract text available
    Text: IRF634N, IRF634NL, IRF634NS, SiHF634N, SiHF634NL, Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Advanced Process Technology VDS V 250 RDS(on) (Ω) VGS = 10 V 0.435 RoHS* • 175 °C Operating Temperature Qg (Max.) (nC) 34 • Fast Switching


    Original     		PDF IRF634N, IRF634NL, IRF634NS, SiHF634N SiHF634NL 18-Jul-08

    Untitled

    Abstract: No abstract text available
    Text: IRF634, SiHF634 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 250 RDS(on) (Ω) VGS = 10 V RoHS* Qg (Max.) (nC) 41 • Fast Switching Qgs (nC) 6.5 • Ease of Paralleling 22 • Simple Drive Requirements Qgd (nC) Configuration


    Original     		PDF IRF634, SiHF634 O-220 O-220 12-Mar-07

    Untitled

    Abstract: No abstract text available
    Text: IRF634S, SiHF634S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V 250 RDS(on) () VGS = 10 V 0.45 Qg (Max.) (nC) 41 Qgs (nC) 6.5 Qgd (nC) 22 Configuration Single D DESCRIPTION D2PAK (TO-263) K G D • Halogen-free According to IEC 61249-2-21


    Original     		PDF IRF634S, SiHF634S 2002/95/EC O-263) 11-Mar-11