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Vishay Siliconix SI8441DB-T2-E1 MOSFET P-CH 20V 10.5A 6MICROFOOT
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DigiKey	SI8441DB-T2-E1	Reel				1 - 10 - 100 - 1000 - 10000 -	Buy Now
Vishay Intertechnologies SI8441DB-T2-E1 MOSFETs 80mohm @ 4.5V
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Mouser Electronics	SI8441DB-T2-E1					1 - 10 - 100 - 1000 - 10000 $0.5	Get Quote

SI8441DB Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
SI8441DB-T2-E1		Vishay Siliconix	FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 20V 10.5A 2X2 6MFP		Original	PDF

SI8441DB Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
8441 Abstract: Si8451DB VISHAY Text: Device Orientation - MICRO FOOT Packages Vishay Siliconix Device Orientation Options for MOSFETs Part Numbers: Si8441DB Si8451DB MICRO FOOT® 2 x 3: 0.5 mm PITCH, 0.250 mm BUMP HEIGHT Part Number Method Si8441DB T2 Si8451DB T2 Device on Tape Orientation	Original	Si8441DB Si8451DB Specification-PACK-0023-10 S-72183, 22-Oct-07 8441 VISHAY	PDF
74668 Abstract: No abstract text available Text: Si8441DB Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY rDS(on) (Ω) ID (A)e 0.080 at VGS = - 4.5 V - 10.5 0.102 at VGS = - 2.5 V - 9.3 0.128 at VGS = - 1.8 V - 3.5 0.198 at VGS = - 1.5 V - 2.5 0.600 at VGS = - 1.2 V - 0.5 VDS (V) - 20	Original	Si8441DB Si8441DB-T2-E1 08-Apr-05 74668	PDF
Untitled Abstract: No abstract text available Text: Si8441DB Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)e 0.080 at VGS = - 4.5 V - 10.5 0.102 at VGS = - 2.5 V - 9.3 0.128 at VGS = - 1.8 V - 3.5 0.198 at VGS = - 1.5 V - 2.5 0.600 at VGS = - 1.2 V - 0.5 VDS (V) - 20	Original	Si8441DB Si8441DB-T2-E1 11-Mar-11	PDF
74883 Abstract: No abstract text available Text: SPICE Device Model Si8441DB Vishay Siliconix P-Channel 20-V G-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range	Original	Si8441DB 18-Jul-08 74883	PDF
Untitled Abstract: No abstract text available Text: Si8441DB Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)e 0.080 at VGS = - 4.5 V - 10.5 0.102 at VGS = - 2.5 V - 9.3 0.128 at VGS = - 1.8 V - 3.5 0.198 at VGS = - 1.5 V - 2.5 0.600 at VGS = - 1.2 V - 0.5 VDS (V) - 20	Original	Si8441DB Si8441DB-T2-E1 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12	PDF
Untitled Abstract: No abstract text available Text: Si8441DB Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)e 0.080 at VGS = - 4.5 V - 10.5 0.102 at VGS = - 2.5 V - 9.3 0.128 at VGS = - 1.8 V - 3.5 0.198 at VGS = - 1.5 V - 2.5 0.600 at VGS = - 1.2 V - 0.5 VDS (V) - 20	Original	Si8441DB Si8441DB-T2-E1 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12	PDF
mosfet 4414 Abstract: transistor 2439 AN609 Text: Si8441DB_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].	Original	Si8441DB AN609 21-Jun-07 mosfet 4414 transistor 2439	PDF
74668 Abstract: No abstract text available Text: Si8441DB Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)e 0.080 at VGS = - 4.5 V - 10.5 0.102 at VGS = - 2.5 V - 9.3 0.128 at VGS = - 1.8 V - 3.5 0.198 at VGS = - 1.5 V - 2.5 0.600 at VGS = - 1.2 V - 0.5 VDS (V) - 20	Original	Si8441DB Si8441DB-T2-E1 18-Jul-08 74668	PDF
SiB431EDK Abstract: No abstract text available Text: Portable Media Player Table of Contents AUDIO, Headphones. 3 AUDIO,	Original	LLP1010-6L LLP75-6L VEMI45AC-HNH VEMI65AC-HCI LLP2513-13L VEMI85AC-HGK LLP1713-9L LLP3313-17L SiB431EDK	PDF
JESD22-B117 Abstract: MICRO SWITCH PRESSURE PCB JEDEC JESD22-B117 JESD22-A104-A smd marking 2x5 micro pitch BGA Lead Free reflow soldering profile BGA PCB design for very fine pitch csp package JESD22-A108-A JESD22-A110 Text: VISHAY SILICONIX Power MOSFETs Application Note 835 PCB Design and Surface-Mount Assembly Guidelines for MICRO FOOT Packages By Changsheng Chen/Greg Getzan Introduction The Vishay Siliconix MICRO FOOT® product family is based on wafer-level chip scale packaging WL-CSP	Original	Si8902EDB 25-Apr-08 JESD22-B117 MICRO SWITCH PRESSURE PCB JEDEC JESD22-B117 JESD22-A104-A smd marking 2x5 micro pitch BGA Lead Free reflow soldering profile BGA PCB design for very fine pitch csp package JESD22-A108-A JESD22-A110	PDF
Diode SOT-23 marking 15d Abstract: SI4210 si4812b SI-4102 SI7149DP SiM400 si4932 si7135 SiB914 SI4477 Text: V ISHAY INTERTECHN O L O G Y , INC . M O S F ET s LITTLE F O O T LITTLE F O O T ® P l u s Tr e n c h F E T ® Sk yFE T® Tu r b o F E T ® ChipFE T® P o w e r PA K ® P o l a r PA K ® P o w e r PA I R w w w. v i s h a y. c o m Selector Guide low-voltage Power MOSFETs	Original	Diod92 VMN-SG2127-0911 Diode SOT-23 marking 15d SI4210 si4812b SI-4102 SI7149DP SiM400 si4932 si7135 SiB914 SI4477	PDF
SC-89-6 Abstract: SiB914 Text: Power mosfets O n - Re sista nce Rating s at V GS = 1. 2 V S M O S F E ts Key Benefits • Optimized for use with the low-voltage core ICs in portable electronics systems • Allow the driver voltage to turn on the switch from a lower output voltage than 1.8 V, reducing the need for level shift circuitry	Original	VMN-PT0103-0802 SC-89-6 SiB914	PDF