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    Vishay Siliconix SI8441DB-T2-E1

    MOSFET P-CH 20V 10.5A 6MICROFOOT
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    Vishay Intertechnologies SI8441DB-T2-E1

    MOSFETs 80mohm @ 4.5V
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    SI8441DB Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Type PDF
    SI8441DB-T2-E1 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 20V 10.5A 2X2 6MFP Original PDF

    SI8441DB Datasheets Context Search

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    8441

    Abstract: Si8451DB VISHAY
    Text: Device Orientation - MICRO FOOT Packages Vishay Siliconix Device Orientation Options for MOSFETs Part Numbers: Si8441DB Si8451DB MICRO FOOT® 2 x 3: 0.5 mm PITCH, 0.250 mm BUMP HEIGHT Part Number Method Si8441DB T2 Si8451DB T2 Device on Tape Orientation


    Original     		PDF Si8441DB Si8451DB Specification-PACK-0023-10 S-72183, 22-Oct-07 8441 VISHAY

    74668

    Abstract: No abstract text available
    Text: Si8441DB Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY rDS(on) (Ω) ID (A)e 0.080 at VGS = - 4.5 V - 10.5 0.102 at VGS = - 2.5 V - 9.3 0.128 at VGS = - 1.8 V - 3.5 0.198 at VGS = - 1.5 V - 2.5 0.600 at VGS = - 1.2 V - 0.5 VDS (V) - 20


    Original     		PDF Si8441DB Si8441DB-T2-E1 08-Apr-05 74668

    Untitled

    Abstract: No abstract text available
    Text: Si8441DB Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)e 0.080 at VGS = - 4.5 V - 10.5 0.102 at VGS = - 2.5 V - 9.3 0.128 at VGS = - 1.8 V - 3.5 0.198 at VGS = - 1.5 V - 2.5 0.600 at VGS = - 1.2 V - 0.5 VDS (V) - 20


    Original     		PDF Si8441DB Si8441DB-T2-E1 11-Mar-11

    74883

    Abstract: No abstract text available
    Text: SPICE Device Model Si8441DB Vishay Siliconix P-Channel 20-V G-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		PDF Si8441DB 18-Jul-08 74883

    Untitled

    Abstract: No abstract text available
    Text: Si8441DB Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)e 0.080 at VGS = - 4.5 V - 10.5 0.102 at VGS = - 2.5 V - 9.3 0.128 at VGS = - 1.8 V - 3.5 0.198 at VGS = - 1.5 V - 2.5 0.600 at VGS = - 1.2 V - 0.5 VDS (V) - 20


    Original     		PDF Si8441DB Si8441DB-T2-E1 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: Si8441DB Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)e 0.080 at VGS = - 4.5 V - 10.5 0.102 at VGS = - 2.5 V - 9.3 0.128 at VGS = - 1.8 V - 3.5 0.198 at VGS = - 1.5 V - 2.5 0.600 at VGS = - 1.2 V - 0.5 VDS (V) - 20


    Original     		PDF Si8441DB Si8441DB-T2-E1 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    mosfet 4414

    Abstract: transistor 2439 AN609
    Text: Si8441DB_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].


    Original     		PDF Si8441DB AN609 21-Jun-07 mosfet 4414 transistor 2439

    74668

    Abstract: No abstract text available
    Text: Si8441DB Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)e 0.080 at VGS = - 4.5 V - 10.5 0.102 at VGS = - 2.5 V - 9.3 0.128 at VGS = - 1.8 V - 3.5 0.198 at VGS = - 1.5 V - 2.5 0.600 at VGS = - 1.2 V - 0.5 VDS (V) - 20


    Original     		PDF Si8441DB Si8441DB-T2-E1 18-Jul-08 74668

    SiB431EDK

    Abstract: No abstract text available
    Text: Portable Media Player Table of Contents AUDIO, Headphones. 3 AUDIO,


    Original     		PDF LLP1010-6L LLP75-6L VEMI45AC-HNH VEMI65AC-HCI LLP2513-13L VEMI85AC-HGK LLP1713-9L LLP3313-17L SiB431EDK

    JESD22-B117

    Abstract: MICRO SWITCH PRESSURE PCB JEDEC JESD22-B117 JESD22-A104-A smd marking 2x5 micro pitch BGA Lead Free reflow soldering profile BGA PCB design for very fine pitch csp package JESD22-A108-A JESD22-A110
    Text: VISHAY SILICONIX Power MOSFETs Application Note 835 PCB Design and Surface-Mount Assembly Guidelines for MICRO FOOT Packages By Changsheng Chen/Greg Getzan Introduction The Vishay Siliconix MICRO FOOT® product family is based on wafer-level chip scale packaging WL-CSP


    Original     		PDF Si8902EDB 25-Apr-08 JESD22-B117 MICRO SWITCH PRESSURE PCB JEDEC JESD22-B117 JESD22-A104-A smd marking 2x5 micro pitch BGA Lead Free reflow soldering profile BGA PCB design for very fine pitch csp package JESD22-A108-A JESD22-A110

    Diode SOT-23 marking 15d

    Abstract: SI4210 si4812b SI-4102 SI7149DP SiM400 si4932 si7135 SiB914 SI4477
    Text: V ISHAY INTERTECHN O L O G Y , INC . M O S F ET s LITTLE F O O T LITTLE F O O T ® P l u s Tr e n c h F E T ® Sk yFE T® Tu r b o F E T ® ChipFE T® P o w e r PA K ® P o l a r PA K ® P o w e r PA I R w w w. v i s h a y. c o m Selector Guide low-voltage Power MOSFETs


    Original     		PDF Diod92 VMN-SG2127-0911 Diode SOT-23 marking 15d SI4210 si4812b SI-4102 SI7149DP SiM400 si4932 si7135 SiB914 SI4477

    SC-89-6

    Abstract: SiB914
    Text: Power mosfets O n - Re sista nce Rating s at V GS = 1. 2 V S M O S F E ts Key Benefits • Optimized for use with the low-voltage core ICs in portable electronics systems • Allow the driver voltage to turn on the switch from a lower output voltage than 1.8 V, reducing the need for level shift circuitry


    Original     		PDF VMN-PT0103-0802 SC-89-6 SiB914