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Vishay Siliconix SI8451DB-T2-E1 MOSFET P-CH 20V 10.8A 6MICROFOOT
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	SI8451DB-T2-E1	Digi-Reel			1	1 $0.97 10 $0.97 100 $0.97 1000 $0.97 10000 $0.97	Buy Now
	SI8451DB-T2-E1	Reel			3,000	1 - 10 - 100 - 1000 - 10000 $0.3632	Buy Now
	SI8451DB-T2-E1	Cut Tape			1	1 $0.97 10 $0.97 100 $0.97 1000 $0.97 10000 $0.97	Buy Now
Vishay Intertechnologies SI8451DB-T2-E1 MOSFETs 20V 10.8A 13W 80mohm @ 4.5V
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Mouser Electronics	SI8451DB-T2-E1					1 - 10 - 100 - 1000 - 10000 $0.363	Get Quote

SI8451DB Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Curated	Type	PDF
SI8451DB-T2-E1		Vishay Siliconix	FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 20V 10.8A MICROFOOT		Original	PDF

SI8451DB Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
8441 Abstract: Si8451DB VISHAY Text: Device Orientation - MICRO FOOT Packages Vishay Siliconix Device Orientation Options for MOSFETs Part Numbers: Si8441DB Si8451DB MICRO FOOT® 2 x 3: 0.5 mm PITCH, 0.250 mm BUMP HEIGHT Part Number Method Si8441DB T2 Si8451DB T2 Device on Tape Orientation	Original	PDF	Si8441DB Si8451DB Specification-PACK-0023-10 S-72183, 22-Oct-07 8441 VISHAY
mosfet 4414 Abstract: Si8451DB AN609 Text: Si8451DB_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].	Original	PDF	Si8451DB AN609 19-Dec-07 mosfet 4414
Si8451DB Abstract: No abstract text available Text: SPICE Device Model Si8451DB Vishay Siliconix P-Channel 20-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range	Original	PDF	Si8451DB 18-Jul-08
Si8451DB Abstract: Si8451DB-T2-E1 Text: Si8451DB Vishay Siliconix P-Channel 1.5-V Rated MOSFET FEATURES PRODUCT SUMMARY VDS V - 20 RDS(on) (Ω) ID (A)e 0.080 at VGS = - 4.5 V - 10.8 0.100 at VGS = - 2.5 V - 9.7 0.126 at VGS = - 1.8 V - 3.0 0.200 at VGS = - 1.5 V - 1.2 Qg (Typ.) • TrenchFET Power MOSFET	Original	PDF	Si8451DB Si8451DB-T2-E1 18-Jul-08
Si8451DB Abstract: Si8451DB-T2-E1 Text: Si8451DB Vishay Siliconix P-Channel 1.5-V Rated MOSFET FEATURES PRODUCT SUMMARY VDS V - 20 rDS(on) (Ω) ID (A)e 0.080 at VGS = - 4.5 V - 10.8 0.100 at VGS = - 2.5 V - 9.7 0.126 at VGS = - 1.8 V - 3.0 0.200 at VGS = - 1.5 V - 1.2 Qg (Typ) • TrenchFET Power MOSFET	Original	PDF	Si8451DB Si8451DB-T2-E1 08-Apr-05
SiB431EDK Abstract: No abstract text available Text: Portable Media Player Table of Contents AUDIO, Headphones. 3 AUDIO,	Original	PDF	LLP1010-6L LLP75-6L VEMI45AC-HNH VEMI65AC-HCI LLP2513-13L VEMI85AC-HGK LLP1713-9L LLP3313-17L SiB431EDK
Diode SOT-23 marking 15d Abstract: SI4210 si4812b SI-4102 SI7149DP SiM400 si4932 si7135 SiB914 SI4477 Text: V ISHAY INTERTECHN O L O G Y , INC . M O S F ET s LITTLE F O O T LITTLE F O O T ® P l u s Tr e n c h F E T ® Sk yFE T® Tu r b o F E T ® ChipFE T® P o w e r PA K ® P o l a r PA K ® P o w e r PA I R w w w. v i s h a y. c o m Selector Guide low-voltage Power MOSFETs	Original	PDF	Diod92 VMN-SG2127-0911 Diode SOT-23 marking 15d SI4210 si4812b SI-4102 SI7149DP SiM400 si4932 si7135 SiB914 SI4477
SC-89-6 Abstract: SiB914 Text: Power mosfets O n - Re sista nce Rating s at V GS = 1. 2 V S M O S F E ts Key Benefits • Optimized for use with the low-voltage core ICs in portable electronics systems • Allow the driver voltage to turn on the switch from a lower output voltage than 1.8 V, reducing the need for level shift circuitry	Original	PDF	VMN-PT0103-0802 SC-89-6 SiB914