74230
Abstract: Si7405DN Si7405DN-T1 Si7425DN Si7425DN-T1-E3
Text: Specification Comparison Vishay Siliconix Si7425DN vs. Si7405DN Description: Package: Pin Out: P-Channel, 12 V D-S MOSFET PowerPAK 1212-8 Identical Part Number Replacements Si7425DN-T1-E3 Replaces Si7405DN-T1-E3 Si7425DN-T1-E3 Replaces Si7405DN-T1 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
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Si7425DN
Si7405DN
Si7425DN-T1-E3
Si7405DN-T1-E3
Si7405DN-T1
06-Nov-06
74230
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Si7425DN
Abstract: No abstract text available
Text: Si7425DN Vishay Siliconix New Product P-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) −12 rDS(on) (W) ID (A) 0.016 @ VGS = −4.5 V −12.6 0.022 @ VGS = −2.5 V −10.8 0.029 @ VGS = −1.8 V −3.5 D TrenchFETr Power MOSFETS: 1.8-V Rated
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Si7425DN
07-mm
Si7425DN-T1--E3
S-32411--Rev.
24-Nov-03
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Untitled
Abstract: No abstract text available
Text: Si7425DN Vishay Siliconix New Product P-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 12 rDS(on) (W) ID (A) 0.016 @ VGS = - 4.5 V - 12.6 0.022 @ VGS = - 2.5 V - 10.8 0.029 @ VGS = - 1.8 V - 3.5 D TrenchFETr Power MOSFETS: 1.8-V Rated D New PowerPAKr Package
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Si7425DN
07-mm
Si7425DN-T1
S-31917--Rev.
15-Sep-03
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Untitled
Abstract: No abstract text available
Text: Si7425DN Vishay Siliconix P-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) 0.016 at VGS = - 4.5 V - 12.6 - 12 0.022 at VGS = - 2.5 V - 10.8 0.029 at VGS = - 1.8 V - 3.5 • Halogen-free According to IEC 61249-2-21 Available
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Si7425DN
Si7425DN-T1-E3
Si7425DN-T1-GE3
11-Mar-11
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Untitled
Abstract: No abstract text available
Text: Si7425DN Vishay Siliconix P-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) −12 rDS(on) (W) ID (A) 0.016 @ VGS = −4.5 V −12.6 0.022 @ VGS = −2.5 V −10.8 0.029 @ VGS = −1.8 V −3.5 D TrenchFETr Power MOSFETS: 1.8-V Rated D New PowerPAKr Package
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Si7425DN
07-mm
Si7425DN-T1--E3
S-51129--Rev.
13-Jun-05
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AN609
Abstract: Si7425DN 15218
Text: Si7425DN_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].
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Si7425DN
AN609
23-Jul-07
15218
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TSOP8
Abstract: No abstract text available
Text: Si7425DN Vishay Siliconix P-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) 0.016 at VGS = - 4.5 V - 12.6 - 12 0.022 at VGS = - 2.5 V - 10.8 0.029 at VGS = - 1.8 V - 3.5 • Halogen-free According to IEC 61249-2-21 Available
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Si7425DN
Si7425DN-T1-E3
Si7425DN-T1-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
TSOP8
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Untitled
Abstract: No abstract text available
Text: Si7425DN Vishay Siliconix P-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) −12 rDS(on) (W) ID (A) 0.016 @ VGS = −4.5 V −12.6 0.022 @ VGS = −2.5 V −10.8 0.029 @ VGS = −1.8 V −3.5 D TrenchFETr Power MOSFETS: 1.8-V Rated D New PowerPAKr Package
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Si7425DN
07-mm
Si7425DN-T1--E3
08-Apr-05
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Untitled
Abstract: No abstract text available
Text: Si7425DN Vishay Siliconix P-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) 0.016 at VGS = - 4.5 V - 12.6 - 12 0.022 at VGS = - 2.5 V - 10.8 0.029 at VGS = - 1.8 V - 3.5 • Halogen-free According to IEC 61249-2-21 Available
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Si7425DN
Si7425DN-T1-E3
Si7425DN-T1-GE3
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: Si7425DN Vishay Siliconix P-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) −12 rDS(on) (W) ID (A) 0.016 @ VGS = −4.5 V −12.6 0.022 @ VGS = −2.5 V −10.8 0.029 @ VGS = −1.8 V −3.5 D TrenchFETr Power MOSFETS: 1.8-V Rated D New PowerPAKr Package
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Si7425DN
07-mm
Si7425DN-T1--E3
18-Jul-08
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Si7425DN
Abstract: No abstract text available
Text: SPICE Device Model Si7425DN Vishay Siliconix P-Channel 12-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range
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Si7425DN
18-Jul-08
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Si7425DN
Abstract: Si7425DN-T1-E3
Text: Si7425DN Vishay Siliconix P-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) 0.016 at VGS = - 4.5 V - 12.6 - 12 0.022 at VGS = - 2.5 V - 10.8 0.029 at VGS = - 1.8 V - 3.5 • Halogen-free According to IEC 61249-2-21 Available
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Original
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PDF
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Si7425DN
Si7425DN-T1-E3
Si7425DN-T1-GE3
18-Jul-08
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Si7425DN
Abstract: No abstract text available
Text: SPICE Device Model Si7425DN Vishay Siliconix P-Channel 12-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range
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Original
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PDF
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Si7425DN
12-Sep-03
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Si7425DN
Abstract: No abstract text available
Text: Si7425DN Vishay Siliconix P-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) −12 rDS(on) (W) ID (A) 0.016 @ VGS = −4.5 V −12.6 0.022 @ VGS = −2.5 V −10.8 0.029 @ VGS = −1.8 V −3.5 D TrenchFETr Power MOSFETS: 1.8-V Rated D New PowerPAKr Package
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Original
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PDF
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Si7425DN
07-mm
Si7425DN-T1--E3
S-51129--Rev.
13-Jun-05
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