Si7405DN
Abstract: Si7405DN-T1
Text: Si7405DN Vishay Siliconix P-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) – 12 rDS(on) (Ω) ID (A) 0.016 at VGS = – 4.5 V – 13 0.022 at VGS = – 2.5 V – 11 0.028 at VGS = – 1.8 V – 9.8 • TrenchFET Power MOSFETS: 1.8-V Rated • New PowerPAK® Package
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Si7405DN
07-mm
Si7405DN-T1
18-Jul-08
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74230
Abstract: Si7405DN Si7405DN-T1 Si7425DN Si7425DN-T1-E3
Text: Specification Comparison Vishay Siliconix Si7425DN vs. Si7405DN Description: Package: Pin Out: P-Channel, 12 V D-S MOSFET PowerPAK 1212-8 Identical Part Number Replacements Si7425DN-T1-E3 Replaces Si7405DN-T1-E3 Si7425DN-T1-E3 Replaces Si7405DN-T1 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
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Si7425DN
Si7405DN
Si7425DN-T1-E3
Si7405DN-T1-E3
Si7405DN-T1
06-Nov-06
74230
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Untitled
Abstract: No abstract text available
Text: Si7405DN Vishay Siliconix P-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) –12 rDS(on) (Ω) ID (A) 0.016 @ VGS = –4.5 V –13 0.022 @ VGS = –2.5 V –11 0.028 @ VGS = –1.8 V –9.8 • TrenchFET Power MOSFETS: 1.8-V Rated • New PowerPAK® Package
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Si7405DN
07-mm
Si7405DN-T1
08-Apr-05
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Si7405BDN
Abstract: Si7405DN Si7405DN-T1
Text: Specification Comparison Vishay Siliconix Si7405BDN vs. Si7405DN Description: Package: Pin Out: P-Channel, 12-V D-S MOSFET PowerPAK 1212-8 Identical Part Number Replacements: Si7405BDN-T1-E3 or Si7405BDN-T1-GE3 replaces Si7405DN-T1-E3 Si7405BDN-T1-E3 or Si7405BDN-T1-GE3 replaces Si7405DN-T1
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Si7405BDN
Si7405DN
Si7405BDN-T1-E3
Si7405BDN-T1-GE3
Si7405DN-T1-E3
Si7405DN-T1
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Si7405DN
Abstract: Si7405DN-T1
Text: Si7405DN Vishay Siliconix P-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 12 rDS(on) (W) ID (A) 0.016 @ VGS = - 4.5 V - 13 0.022 @ VGS = - 2.5 V - 11 0.028 @ VGS = - 1.8 V - 9.8 D TrenchFETr Power MOSFETS: 1.8-V Rated D New PowerPAKr Package
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Si7405DN
07-mm
Si7405DN-T1
S-31989--Rev.
13-Oct-03
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Untitled
Abstract: No abstract text available
Text: Si7405DN Vishay Siliconix P-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) –12 rDS(on) (Ω) ID (A) 0.016 @ VGS = –4.5 V –13 0.022 @ VGS = –2.5 V –11 0.028 @ VGS = –1.8 V –9.8 • TrenchFET Power MOSFETS: 1.8-V Rated • New PowerPAK® Package
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Si7405DN
07-mm
Si7405DN-T1
S-51210
27-Jun-05
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Si7405DN
Abstract: No abstract text available
Text: Si7405DN New Product Vishay Siliconix P-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) –12 rDS(on) (W) ID (A) 0.016 @ VGS = –4.5 V –13 0.022 @ VGS = –2.5 V –11 0.028 @ VGS = –1.8 V –9.8 D TrenchFETr Power MOSFETS: 1.8-V Rated D New PowerPAKt Package
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Si7405DN
07-mm
S-03310--Rev.
26-Mar-01
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AN609
Abstract: Si7405DN
Text: Si7405DN_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].
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Si7405DN
AN609
28-Nov-05
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Si7401DN
Abstract: Si7405DN
Text: SPICE Device Model Si7405DN Vishay Siliconix P-Channel 12-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range
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Si7405DN
05-Jun-01
Si7401DN
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Si7405DN
Abstract: Si7405DN-T1
Text: Si7405DN Vishay Siliconix P-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) – 12 rDS(on) (Ω) ID (A) 0.016 at VGS = – 4.5 V – 13 0.022 at VGS = – 2.5 V – 11 0.028 at VGS = – 1.8 V – 9.8 • TrenchFET Power MOSFETS: 1.8-V Rated • New PowerPAK® Package
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Original
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PDF
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Si7405DN
07-mm
Si7405DN-T1
08-Apr-05
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