Si4980DY
Abstract: No abstract text available
Text: Si4980DY Vishay Siliconix Dual N-Channel 80-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 80 ID (A) 0.075 at VGS = 10 V 3.7 0.095 at VGS = 6.0 V 3.2 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFETs • Compliant to RoHS Directive 2002/95/EC
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Si4980DY
2002/95/EC
Si4980DY-T1-E3
Si4980DY-T1-GE3
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Si4980DY
Abstract: No abstract text available
Text: Si4980DY Vishay Siliconix Dual N-Channel 80-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 80 ID (A) 0.075 at VGS = 10 V 3.7 0.095 at VGS = 6.0 V 3.2 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFETs • Compliant to RoHS Directive 2002/95/EC
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Si4980DY
2002/95/EC
Si4980DY-T1-E3
Si4980DY-T1-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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Si4980DY
Abstract: Si4980DY-T1-E3
Text: Si4980DY Vishay Siliconix Dual N-Channel 80-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 80 ID (A) 0.075 at VGS = 10 V 3.7 0.095 at VGS = 6.0 V 3.2 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFETs • Compliant to RoHS Directive 2002/95/EC
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Si4980DY
2002/95/EC
Si4980DY-T1-E3
Si4980DY-T1-GE3
11-Mar-11
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Si4980DY
Abstract: No abstract text available
Text: Si4980DY Vishay Siliconix Dual N-Channel 80-V D-S MOSFET PRODUCT SUMMARY VDS (V) 80 rDS(on) (W) ID (A) 0.075 @ VGS = 10 V 3.7 0.095 @ VGS = 6.0 V 3.2 D SO-8 S1 1 8 D1 G1 2 7 D1 S2 3 6 D2 G2 4 5 D2 G Top View Ordering Information: Si4980DY Si4980DY-T1 (with Tape and Reel)
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Si4980DY
Si4980DY-T1
18-Jul-08
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Si4980DY
Abstract: No abstract text available
Text: Si4980DY Vishay Siliconix Dual N-Channel 80-V D-S MOSFET PRODUCT SUMMARY VDS (V) 80 RDS(ON) (W) ID (A) 0.075 @ VGS = 10 V "3.7 0.095 @ VGS = 6.0 V "3.2 D SO-8 S1 1 8 D1 G1 2 7 D1 S2 3 6 D2 G2 4 5 D2 G Top View S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
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Si4980DY
S-53722--Rev.
25-Aug-97
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Si4980DY
Abstract: Si4980DY-T1
Text: Si4980DY Vishay Siliconix Dual N-Channel 80-V D-S MOSFET PRODUCT SUMMARY VDS (V) 80 rDS(on) (W) ID (A) 0.075 @ VGS = 10 V 3.7 0.095 @ VGS = 6.0 V 3.2 D SO-8 S1 1 8 D1 G1 2 7 D1 S2 3 6 D2 G2 4 5 D2 G Top View Ordering Information: Si4980DY Si4980DY-T1 (with Tape and Reel)
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Si4980DY
Si4980DY-T1
S-03950--Rev.
26-May-03
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Si4980DY
Abstract: No abstract text available
Text: Si4980DY Vishay Siliconix Dual N-Channel 80-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 80 ID (A) 0.075 at VGS = 10 V 3.7 0.095 at VGS = 6.0 V 3.2 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFETs • Compliant to RoHS Directive 2002/95/EC
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Si4980DY
2002/95/EC
Si4980DY-T1-E3
Si4980DY-T1-GE3
11-Mar-11
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Si4980DY
Abstract: Si4980DY-T1
Text: Si4980DY Vishay Siliconix Dual N-Channel 80-V D-S MOSFET PRODUCT SUMMARY VDS (V) 80 rDS(on) (W) ID (A) 0.075 @ VGS = 10 V 3.7 0.095 @ VGS = 6.0 V 3.2 D SO-8 S1 1 8 D1 G1 2 7 D1 S2 3 6 D2 G2 4 5 D2 G Top View Ordering Information: Si4980DY Si4980DY-T1 (with Tape and Reel)
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Si4980DY
Si4980DY-T1
08-Apr-05
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Si4980DY
Abstract: No abstract text available
Text: Si4980DY Dual N-Channel 80-V Rated MOSFET Product Summary VDS V 80 rDS(on) (W) ID (A) 0.075 @ VGS = 10 V "3.7 0.095 @ VGS = 6.0 V "3.2 D SO-8 S1 1 8 D1 G1 2 7 D1 S2 3 6 D2 G2 4 5 D2 G Top View S N-Channel MOSFET Absolute Maximum Ratings (TA = 25_C Unless Otherwise Noted)
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Si4980DY
S-49460--Rev.
17-Dec-95
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AN609
Abstract: Si4980DY 68117
Text: Si4980DY_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].
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Si4980DY
AN609
12-Jun-07
68117
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Si4980DY
Abstract: No abstract text available
Text: SPICE Device Model Si4980DY Vishay Siliconix Dual N-Channel 80-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range
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Si4980DY
18-Jul-08
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Si4980DY
Abstract: 71014
Text: SPICE Device Model Si4980DY Vishay Siliconix Dual N-Channel 80-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range
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Si4980DY
S-51890Rev.
12-Sep-05
71014
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Si4980DY
Abstract: No abstract text available
Text: Si4980DY Vishay Siliconix Dual N-Channel 80-V D-S MOSFET PRODUCT SUMMARY VDS (V) 80 rDS(on) (W) ID (A) 0.075 @ VGS = 10 V "3.7 0.095 @ VGS = 6.0 V "3.2 D SO-8 S1 1 8 D1 G1 2 7 D1 S2 3 6 D2 G2 4 5 D2 G Top View S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
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Si4980DY
S-56944â
23-Nov-98
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Si4980DY
Abstract: No abstract text available
Text: Si4980DY Dual N-Channel 80-V Rated MOSFET Product Summary VDS V 80 rDS(on) (W) ID (A) 0.075 @ VGS = 10 V "3.7 0.095 @ VGS = 6.0 V "3.2 D SO-8 S1 1 8 D1 G1 2 7 D1 S2 3 6 D2 G2 4 5 D2 G Top View S N-Channel MOSFET Absolute Maximum Ratings (TA = 25_C Unless Otherwise Noted)
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Si4980DY
S-53722--Rev.
25-Aug-97
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Si4980DY
Abstract: 71014
Text: \\\ SPICE Device Model Si4980DY Vishay Siliconix Dual N-Channel 80-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range
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Si4980DY
0-to-10V
25-Mar-02
71014
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Si4980DY
Abstract: Si4980DY-T1-E3
Text: Si4980DY Vishay Siliconix Dual N-Channel 80-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 80 ID (A) 0.075 at VGS = 10 V 3.7 0.095 at VGS = 6.0 V 3.2 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFETs • Compliant to RoHS Directive 2002/95/EC
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Si4980DY
2002/95/EC
Si4980DY-T1-E3
Si4980DY-T1-GE3
18-Jul-08
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71917
Abstract: level logic mosfet transistor so-8 offline switchmode si9110 siliconix an607 AN607 AN707 SI4406DY PowerPAK SO-8 si2301ds
Text: AN607 Vishay Siliconix DC-to-DC Design Guide Serge Jaunay, Jess Brown INTRODUCTION Manufacturers of electronic systems that require power conversion are faced with the need for higher-density dc-to-dc converters that perform more efficiently, within a smaller
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AN607
Si9137
SSOP-28
Si9910
Si9912
Si9913
10-Oct-02
71917
level logic mosfet transistor so-8
offline switchmode
si9110
siliconix an607
AN607
AN707
SI4406DY
PowerPAK SO-8
si2301ds
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FSQ510 Equivalent
Abstract: BTA12 6008 bta16 6008 ZIGBEE interface with AVR ATmega16 Precision triac control thermostat thyristor t 558 f eupec gw 5819 diode transistor a564 A564 transistor BSM25GP120 b2
Text: SEMICONDUCTORS MCU/MPU/DSP Atmel. . . . . . . . . 167, 168, 169, 170, 171, 172 Blackhawk. . . . . . . . . . . . . . . . . . . . . . . . . 173 Cyan . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 174 Cypress. . . . . . . . . . . . . . . 175, 176, 177, 178
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GP-20)
FSQ510 Equivalent
BTA12 6008
bta16 6008
ZIGBEE interface with AVR ATmega16
Precision triac control thermostat
thyristor t 558 f eupec
gw 5819 diode
transistor a564
A564 transistor
BSM25GP120 b2
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VN10KLS
Abstract: mosfet bs250 Si4730 SUP85N03-04P VN66AFD Si4835DY si5504 SI3459DV sup65p06 sub75p05
Text: Power MOSFET Selector Guide Vishay Siliconix LITTLE FOOT Plusä ä Schottky Name Channel Configuration VDS V rDS(on) @ 10.0V rDS(on) @ 4.5V rDS(on) @ 3.3V rDS(on) @ 2.5V rDS(on) @ 1.8V ID (A) Max. Qg (nC) Typ. PD (W) Max. SO-8 Si4831DY P Single Plus Integrated
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Si4831DY
Si4833DY
Si4852DY
Si4816DY
10Single
VN50300L
VN50300T
OT-23
VN66AFD
VN10KLS
mosfet bs250
Si4730
SUP85N03-04P
VN66AFD
Si4835DY
si5504
SI3459DV
sup65p06
sub75p05
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YTA630
Abstract: MTW14P20 BSS125 MTAJ30N06HD 2SK2837 equivalent SMU10P05 SMP60N06 replacement STE180N10 RFH75N05E IRFD620
Text: Power MOSFETs Cross Reference Alphanumerically Part Number VDSS V RDS(ON) (ohm) ID (A) PD (W) Package 2N7000 2N7002 2SJ377 2SJ378 2SJ380 2SJ401 2SJ402 2SJ407 2SJ412 2SJ419 2SJ420 2SJ421 2SJ438 2SJ439 2SJ464 2SJ465 2SJ468 2SJ469 2SJ482 2SJ507 2SJ508 2SJ509
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2N7000
2N7002
2SJ377
2SJ378
2SJ380
2SJ401
2SJ402
2SJ407
2SJ412
2SJ419
YTA630
MTW14P20
BSS125
MTAJ30N06HD
2SK2837 equivalent
SMU10P05
SMP60N06 replacement
STE180N10
RFH75N05E
IRFD620
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q406 transistor
Abstract: SI9120 equivalent Q406 q406 SUM65N20-30 Si3456BDV SPICE Device Model sud*50n025 Si4304DY 0038 tsop Si2325DS
Text: Power MOSFETS for DC/DC Applications Vishay Siliconix 2201 Laurelwood Road P.O. Box 54951 Santa Clara, CA 95056 Phone: +1 408 988 8000 Fax: +1 408 567 8950 www.vishay.com NOTICE Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or anyone on its behalf, assumes no
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SiP41109
SiP41110
SiP41111
75/2A
q406 transistor
SI9120
equivalent Q406
q406
SUM65N20-30
Si3456BDV SPICE Device Model
sud*50n025
Si4304DY
0038 tsop
Si2325DS
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rtd pt100 interface to 8051
Abstract: 24V 20A SIEMENS battery charger LM2560 smd 58a transistor 6-pin pic 16f84 PWM circuit scr control light intensity using 8051 8051 microwave oven design of FM transmitter final year project project pic 16f84 pwm "white led" 5mm
Text: INDEX Order Code Description _ 102-271 794-740 102-246 794-752 101-930 102-283 101-886 101-953 _ _ 688-137 688-149 _ _ 597-387 705-536 473-728 473-753 473-730 473-741 473-881 _ _ _ 690-648 690-703 690-636 791-180 _ 791-805 _ 101-564 101-540 101-552 101-515
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OPA340PA:
ADS7816P:
12-Bit
200KHz
OPA2337PA:
ADS7822P:
INA125UA:
OPA680U:
OPA547F:
rtd pt100 interface to 8051
24V 20A SIEMENS battery charger
LM2560
smd 58a transistor 6-pin
pic 16f84 PWM circuit
scr control light intensity using 8051
8051 microwave oven
design of FM transmitter final year project
project pic 16f84 pwm
"white led" 5mm
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ixfh26n60q
Abstract: 2SK2333 2SK2761 IRF1405 BUZ345 BSS89 irfp250n P9NB60 irfp260n 2sk2671
Text: MHTEPTEKC ww w.i-t.su ¡nfo@ i-t.su Ten: 495 739-09-95, 644-41-29 TpaH3MCTopbi N-MOSFET copTMpoBKa no HanpflweHMro UDS Kofl: SI4466DY SI4966DY SI9925DY SI9942DY 2SK1388 IRF7319 IRF7413 IRF7455 IRL2203N IRL3103 IRL3713 IRL3803 IRL3803S IRLL2703 SI4404DY SI4412ADY
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SI4466DY
SI4966DY
SI9925DY
SI9942DY
2SK1388
T0220AB
IRF7319
IRF7413
IRF7455
IRL2203N
ixfh26n60q
2SK2333
2SK2761
IRF1405
BUZ345
BSS89
irfp250n
P9NB60
irfp260n
2sk2671
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Untitled
Abstract: No abstract text available
Text: Tem ic SÌ4980DY S e m i c o n d u c t o r s Dual N-Channel 80-V Rated MOSFET Product Summary V d s V 80 rDS(on) ( ß ) I d (A) 0.075 @ VGS = 10 V ±3.7 0.095 @ VGS = 6.0 V ±3.2 po'«0 SO-8 «J Top View N-Channel MOSFET Absolute Maximum Ratings (Ta = 25 °C Unless Otherwise Noted)
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4980DY
S-49460--Rev.
17-Dec-95
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