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    SI4888DY Price and Stock

    Vishay Siliconix SI4888DY-T1-E3

    MOSFET N-CH 30V 11A 8SO
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    DigiKey SI4888DY-T1-E3 Cut Tape
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    SI4888DY-T1-E3 Reel
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    SI4888DY-T1-E3 Digi-Reel 1
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    RS SI4888DY-T1-E3 Bulk 2,500
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    Bristol Electronics SI4888DY-T1-E3 3,483
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    Vishay Siliconix SI4888DY-T1-GE3

    MOSFET N-CH 30V 11A 8SO
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    Vishay Intertechnologies SI4888DY-T1-E3

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    Bristol Electronics SI4888DY-T1-E3 35,188
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    SI4888DY-T1-E3 1,263
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    Quest Components SI4888DY-T1-E3 1,010
    • 1 $2.9016
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    SI4888DY-T1-E3 1,010
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    Chip 1 Exchange SI4888DY-T1-E3 6,418
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    SI4888DY-T1-E3 6,418
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    Vishay Siliconix SI4888DY

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    Bristol Electronics SI4888DY 3,483
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    Quest Components SI4888DY 560
    • 1 $3.06
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    Vishay Siliconix SI4888DY-T1

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    Bristol Electronics SI4888DY-T1 3,483
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    Find more SI4888DY price and stock on Findchips.com

    SI4888DY Datasheets (5)

    Part ECAD Model Manufacturer Description Curated Type PDF
    Si4888DY Vishay Intertechnology N-Channel Reduced Q g , Fast Switching MOSFET Original PDF
    Si4888DY Vishay Siliconix N-Channel Reduced Qg, Fast Switching MOSFET Original PDF
    Si4888DY SPICE Device Model Vishay N-Channel Reduced Qg, Fast Switching MOSFET Original PDF
    SI4888DY-T1-E3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 30V 11A 8-SOIC Original PDF
    SI4888DY-T1-GE3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 30V 11A 8-SOIC Original PDF

    SI4888DY Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Si4888DY

    Abstract: Si4888DY-T1-E3 Si4888DY-T1-GE3
    Text: Si4888DY Vishay Siliconix N-Channel Reduced Qg, Fast Switching MOSFET FEATURES PRODUCT SUMMARY VDS V RDS(on) (Ω) 30 ID (A) 0.007 at VGS = 10 V 16 0.010 at VGS = 4.5 V 13 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET


    Original     		PDF Si4888DY Si4888DY-T1-E3 Si4888DY-T1-GE3 11-Mar-11

    SI4888DY

    Abstract: Si4888DY-T1-E3 Si4888DY-T1-GE3
    Text: Si4888DY Vishay Siliconix N-Channel Reduced Qg, Fast Switching MOSFET FEATURES PRODUCT SUMMARY VDS V RDS(on) (Ω) 30 ID (A) 0.007 at VGS = 10 V 16 0.010 at VGS = 4.5 V 13 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET


    Original     		PDF Si4888DY Si4888DY-T1-E3 Si4888DY-T1-GE3 18-Jul-08

    SI4888DY

    Abstract: si4888dy-t1-e3 Si4888DY-T1
    Text: Si4888DY Vishay Siliconix N-Channel Reduced Qg, Fast Switching MOSFET FEATURES PRODUCT SUMMARY VDS V 30 rDS(on) (W) ID (A) 0.007 @ VGS = 10 V 16 0.010 @ VGS = 4.5 V 13 D TrenchFETr Power MOSFET D High-Efficiency PWM Optimized D 100% Rg Tested D SO-8 S S


    Original     		PDF Si4888DY Si4888DY-T1 Si4888DY--E3 Si4888DY-T1--E3 S-50404--Rev. 07-Mar-05 si4888dy-t1-e3

    S-21092

    Abstract: SI4888DY
    Text: Si4888DY Vishay Siliconix N-Channel Reduced Qg, Fast Switching MOSFET PRODUCT SUMMARY VDS V 30 rDS(on) (W) ID (A) 0.007 @ VGS = 10 V 16 0.010 @ VGS = 4.5 V 13 D D D D SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G N-Channel MOSFET Top View S S S ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)


    Original     		PDF Si4888DY S-21092--Rev. 01-Jul-02 S-21092

    Untitled

    Abstract: No abstract text available
    Text: Si4888DY Vishay Siliconix N-Channel Reduced Qg, Fast Switching MOSFET FEATURES PRODUCT SUMMARY VDS V 30 rDS(on) (W) ID (A) 0.007 @ VGS = 10 V 16 0.010 @ VGS = 4.5 V 13 D TrenchFETr Power MOSFET D High-Efficiency PWM Optimized D 100% Rg Tested D SO-8 S S


    Original     		PDF Si4888DY Si4888DY-T1 Si4888DY--E3 Si4888DY-T1--E3 18-Jul-08

    Si4888DY

    Abstract: No abstract text available
    Text: SPICE Device Model Si4888DY Vishay Siliconix N-Channel Reduced Qg, Fast Switching MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model Subcircuit Model • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		PDF Si4888DY 18-Jul-08

    Untitled

    Abstract: No abstract text available
    Text: Si4888DY Vishay Siliconix N-Channel Reduced Qg, Fast Switching MOSFET FEATURES PRODUCT SUMMARY VDS V RDS(on) (Ω) 30 ID (A) 0.007 at VGS = 10 V 16 0.010 at VGS = 4.5 V 13 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET


    Original     		PDF Si4888DY Si4888DY-T1-E3 Si4888DY-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    SI4888DY

    Abstract: No abstract text available
    Text: Si4888DY Vishay Siliconix N-Channel Reduced Qg, Fast Switching MOSFET PRODUCT SUMMARY VDS V 30 rDS(on) (W) ID (A) 0.007 @ VGS = 10 V 16 0.010 @ VGS = 4.5 V 13 D D D D SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G N-Channel MOSFET Top View S S S ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)


    Original     		PDF Si4888DY S-03662--Rev. 14-Apr-03

    Untitled

    Abstract: No abstract text available
    Text: Si4888DY Vishay Siliconix N-Channel Reduced Qg, Fast Switching MOSFET FEATURES PRODUCT SUMMARY VDS V RDS(on) (Ω) 30 ID (A) 0.007 at VGS = 10 V 16 0.010 at VGS = 4.5 V 13 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET


    Original     		PDF Si4888DY Si4888DY-T1-E3 Si4888DY-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    74627

    Abstract: 3036 AN609 Si4888DY
    Text: Si4888DY_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].


    Original     		PDF Si4888DY AN609 01-Jun-07 74627 3036

    Untitled

    Abstract: No abstract text available
    Text: Si4888DY Vishay Siliconix N-Channel Reduced Qg, Fast Switching MOSFET FEATURES PRODUCT SUMMARY VDS V 30 rDS(on) (W) ID (A) 0.007 @ VGS = 10 V 16 0.010 @ VGS = 4.5 V 13 D TrenchFETr Power MOSFET D High-Efficiency PWM Optimized D 100% Rg Tested D SO-8 S S


    Original     		PDF Si4888DY Si4888DY-T1 Si4888DY--E3 Si4888DY-T1--E3 08-Apr-05

    SI4888DY

    Abstract: No abstract text available
    Text: SPICE Device Model Si4888DY Vishay Siliconix N-Channel Reduced Qg, Fast Switching MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model Subcircuit Model • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		PDF Si4888DY 0-to-10V 09-Aug-02

    Untitled

    Abstract: No abstract text available
    Text: Si4888DY Vishay Siliconix N-Channel Reduced Qg, Fast Switching MOSFET PRODUCT SUMMARY VDS V 30 rDS(on) (W) ID (A) 0.007 @ VGS = 10 V 16 0.010 @ VGS = 4.5 V 13 D D D D SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G N-Channel MOSFET Top View S S S ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)


    Original     		PDF Si4888DY S-21478--Rev. 26-Aug-02

    Si4888DY

    Abstract: Si4888DY-T1 si4888dy-t1-e3
    Text: Si4888DY Vishay Siliconix N-Channel Reduced Qg, Fast Switching MOSFET FEATURES PRODUCT SUMMARY VDS V 30 rDS(on) (W) ID (A) 0.007 @ VGS = 10 V 16 0.010 @ VGS = 4.5 V 13 D TrenchFETr Power MOSFET D High-Efficiency PWM Optimized D 100% Rg Tested D SO-8 S S


    Original     		PDF Si4888DY Si4888DY-T1 Si4888DY--E3 Si4888DY-T1--E3 si4888dy-t1-e3

    SI4888DY

    Abstract: No abstract text available
    Text: SPICE Device Model Si4888DY Vishay Siliconix N-Channel Reduced Qg, Fast Switching MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model Subcircuit Model • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		PDF Si4888DY S-60245Rev. 20-Feb-06

    SI4888DY

    Abstract: No abstract text available
    Text: Si4888DY New Product Vishay Siliconix N-Channel Reduced Qg, Fast Switching MOSFET PRODUCT SUMMARY VDS V 30 rDS(on) (W) ID (A) 0.007 @ VGS = 10 V 16 0.010 @ VGS = 4.5 V 13 D D D D SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G N-Channel MOSFET Top View S S S ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)


    Original     		PDF Si4888DY S-02559--Rev. 20-Nov-00

    Untitled

    Abstract: No abstract text available
    Text: Si4888DY Vishay Siliconix N-Channel Reduced Qg, Fast Switching MOSFET PRODUCT SUMMARY VDS V 30 rDS(on) (W) ID (A) 0.007 @ VGS = 10 V 16 0.010 @ VGS = 4.5 V 13 D D D D SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G N-Channel MOSFET Top View S S S ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)


    Original     		PDF Si4888DY S-21092--Rev. 01-Jul-02

    71917

    Abstract: level logic mosfet transistor so-8 offline switchmode si9110 siliconix an607 AN607 AN707 SI4406DY PowerPAK SO-8 si2301ds
    Text: AN607 Vishay Siliconix DC-to-DC Design Guide Serge Jaunay, Jess Brown INTRODUCTION Manufacturers of electronic systems that require power conversion are faced with the need for higher-density dc-to-dc converters that perform more efficiently, within a smaller


    Original     		PDF AN607 Si9137 SSOP-28 Si9910 Si9912 Si9913 10-Oct-02 71917 level logic mosfet transistor so-8 offline switchmode si9110 siliconix an607 AN607 AN707 SI4406DY PowerPAK SO-8 si2301ds

    sil1162

    Abstract: Diode 31d8 06 31d8 diode C828 3-pin transistor 2N7002DW 3 PIN hall effect sensor u58 hall effect sensor u58 zener 12a2 powerbook bubba oscillator schematic
    Text: 8 6 7 2 3 4 5 CK APPD 1. ALL RESISTANCE VALUES ARE IN OHMS, 0.1 WATT +/- 5%. 2. ALL CAPACITANCE VALUES ARE IN MICROFARADS. 3. ALL CRYSTALS & OSCILLATOR VALUES ARE IN HERTZ. REV ZONE ECN PAGE B TITLE PAGE AND CONTENTS SYSTEM BLOCK DIAGRAM POWER BLOCK DIAGRAM


    Original     		PDF MPC7450 200PIN RPAK10P2C 1000BT SN74AUC1G04 sil1162 Diode 31d8 06 31d8 diode C828 3-pin transistor 2N7002DW 3 PIN hall effect sensor u58 hall effect sensor u58 zener 12a2 powerbook bubba oscillator schematic

    VJ0603S

    Abstract: GRM188R61A475KE19D S1010 1N5819HW CEP125-2R8MC-H MIC2198 SD103BWS VJ0603Y222KXAAT
    Text: MIC2198 Evaluation Board Micrel MIC2198 Evaluation Board 500kHz SO-8 Synchronous Buck Control IC Introduction Quick-Start Guide Refer to Figure 1 for the following: 1. Connect the positive terminal from the power supply to VIN post J1 on the MIC2198 evaluation board.


    Original     		PDF MIC2198 500kHz VJ0603S GRM188R61A475KE19D S1010 1N5819HW CEP125-2R8MC-H SD103BWS VJ0603Y222KXAAT

    5a6 zener diode

    Abstract: dual mosfet dip diode zener 6.2v 1w 10v ZENER DIODE 5A6 smd sot23 DG9415
    Text: Subscriber Linecard Table of Contents DATA LINE, Ethernet. 3 DATA LINE, Optical


    Original     		PDF Si4418DY 130mOhm@ Si4420BDY Si6928DQ 35mOhm@ Si6954ADQ 53mOhm@ SiP2800 SUM47N10-24L 24mOhm@ 5a6 zener diode dual mosfet dip diode zener 6.2v 1w 10v ZENER DIODE 5A6 smd sot23 DG9415

    TPS54356

    Abstract: HPA058 TPS54350 TPS54352 TPS54353 TPS54354
    Text: TPS54356EVMĆ058 3ĆAmp SWIFTE Regulator Evaluation Module User’s Guide May 2004 PMP Systems Power SLVU110 IMPORTANT NOTICE Texas Instruments Incorporated and its subsidiaries TI reserve the right to make corrections, modifications, enhancements, improvements, and other changes to its products and services at any time and to discontinue


    Original     		PDF TPS54356EVM058 SLVU110 Si4888DY 1/16-W, 100-mil, PWP16 TPS54356PWP HPA058 TPS54356 HPA058 TPS54350 TPS54352 TPS54353 TPS54354

    MIC2198

    Abstract: SD103BWS 1N5819HW CEP125-2R8MC-H rectifire
    Text: MIC2198 Evaluation Board Micrel MIC2198 Evaluation Board 500kHz SO-8 Synchronous Buck Control IC Introduction Quick-Start Guide Refer to Figure 1 for the following: 1. Connect the positive terminal from the power supply to VIN post J1 on the MIC2198 evaluation board.


    Original     		PDF MIC2198 500kHz SD103BWS 1N5819HW CEP125-2R8MC-H rectifire

    CAT7105CA

    Abstract: mp1410es G547E2 G547H2 G547F2 P5504EDG equivalent G547I1 SP8K10 SP8K10SFD5TB LD1117Al
    Text: Diodes, Inc. - Cross Reference Industry Part Diodes, Inc. Equivalent Diodes, Inc. Nearest 1.5CE120C 1.5KE120CA N/A 1.5CE120CA 1.5KE120CA N/A 1.5CE12A 1.5KE12A N/A 1.5CE12C 1.5KE12CA N/A 1.5CE12CA 1.5KE12CA N/A 1.5CE13 1.5KE13A N/A 1.5CE130 1.5KE130A N/A 1.5CE130A


    Original     		PDF 5CE120C 5KE120CA 5CE120CA 5CE12A 5KE12A 5CE12C 5KE12CA 5CE12CA CAT7105CA mp1410es G547E2 G547H2 G547F2 P5504EDG equivalent G547I1 SP8K10 SP8K10SFD5TB LD1117Al