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    SI4483ADY Price and Stock

    Vishay Siliconix SI4483ADY-T1-GE3

    MOSFET P-CH 30V 19.2A 8SO
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SI4483ADY-T1-GE3 Reel 25,000 2,500
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    SI4483ADY-T1-GE3 Cut Tape 1,043 1
    • 1 $1.17
    • 10 $0.954
    • 100 $0.7424
    • 1000 $0.51258
    • 10000 $0.51258
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    SI4483ADY-T1-GE3 Digi-Reel 1
    • 1 $1.17
    • 10 $0.954
    • 100 $0.7424
    • 1000 $0.51258
    • 10000 $0.51258
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    Vishay Intertechnologies SI4483ADY-T1-GE3

    Trans MOSFET P-CH 30V 13.5A 8-Pin SOIC N T/R - Tape and Reel (Alt: SI4483ADY-T1-GE3)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas SI4483ADY-T1-GE3 Reel 17 Weeks 2,500
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    • 10000 $0.42963
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    Mouser Electronics SI4483ADY-T1-GE3 35,896
    • 1 $1.17
    • 10 $0.954
    • 100 $0.742
    • 1000 $0.512
    • 10000 $0.437
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    Newark SI4483ADY-T1-GE3 Cut Tape 30,842 5
    • 1 $1.3
    • 10 $1.09
    • 100 $0.875
    • 1000 $0.875
    • 10000 $0.875
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    SI4483ADY-T1-GE3 Reel 2,500
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    • 10000 $0.466
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    SI4483ADY-T1-GE3 Cut Tape 2,500
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    • 10 -
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    • 1000 $0.822
    • 10000 $0.822
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    Bristol Electronics SI4483ADY-T1-GE3 46,733
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    Quest Components SI4483ADY-T1-GE3 2,466
    • 1 $1.736
    • 10 $1.736
    • 100 $1.736
    • 1000 $0.6944
    • 10000 $0.6076
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    TTI SI4483ADY-T1-GE3 Reel 7,500 2,500
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    • 1000 -
    • 10000 $0.438
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    TME SI4483ADY-T1-GE3 2,014 1
    • 1 $1.36
    • 10 $1.23
    • 100 $0.97
    • 1000 $0.9
    • 10000 $0.9
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    Avnet Asia SI4483ADY-T1-GE3 21 Weeks 2,500
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    • 10000 $0.41488
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    EBV Elektronik SI4483ADY-T1-GE3 18 Weeks 2,500
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    Vishay Siliconix SI4483ADY

    SMALL SIGNAL FIELD-EFFECT TRANSISTOR, 19.2A I(D), 30V, 1-ELEMENT, P-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, MS-012AA
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components SI4483ADY 10
    • 1 $1.44
    • 10 $1.2
    • 100 $1.2
    • 1000 $1.2
    • 10000 $1.2
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    ES Components SI4483ADY 7,482
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    Vishay Huntington SI4483ADY-T1-GE3

    Trans MOSFET P-CH 30V 19.2A 8-Pin SOIC N T/R / MOSFET P-CH 30V 19.2A 8-SOIC
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Win Source Electronics SI4483ADY-T1-GE3 7,500
    • 1 -
    • 10 -
    • 100 $1.334
    • 1000 $1.084
    • 10000 $1.084
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    SI4483ADY Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Type PDF
    SI4483ADY-T1-GE3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 30V 19.2A 8-SOIC Original PDF

    SI4483ADY Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Si4483ADY

    Abstract: Si4483A
    Text: SPICE Device Model Si4483ADY Vishay Siliconix P-Channel 30-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the - 55 °C to 125 °C Temperature Range


    Original
    PDF Si4483ADY 18-Jul-08 Si4483A

    7636 mosfet

    Abstract: 7636 7935 7636 transistor diode 7935 8927 diode 9181 AN609 6901-6 Si4483A
    Text: Si4483ADY_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/Tank and Cauer/Filter configurations are included. When implemented in P-Spice,


    Original
    PDF Si4483ADY AN609, 21-Oct-08 7636 mosfet 7636 7935 7636 transistor diode 7935 8927 diode 9181 AN609 6901-6 Si4483A

    Untitled

    Abstract: No abstract text available
    Text: SPICE Device Model Si4483ADY www.vishay.com Vishay Siliconix P-Channel 30 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the p-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C


    Original
    PDF Si4483ADY 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    si4483ady

    Abstract: Si4483A SI4483ADY-T1-GE3 SI4483
    Text: Si4483ADY Vishay Siliconix P-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () ID (A)d 0.0088 at VGS = - 10 V - 19.2 0.0153 at VGS = - 4.5 V - 14.6 VDS (V) - 30 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET


    Original
    PDF Si4483ADY 2002/95/EC Si4483ADY-T1-GE3 18-Jul-08 Si4483A SI4483

    Si4483ADY

    Abstract: Si4483A SI4483ADY-T1-GE3 S-82659-Rev
    Text: New Product Si4483ADY Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 RDS(on) (Ω) ID (A)d 0.0088 at VGS = - 10 V - 19.2 0.0153 at VGS = - 4.5 V - 14.6 • • • • Qg (Typ.) 44.8 nC Halogen-free TrenchFET Power MOSFET


    Original
    PDF Si4483ADY Si4483ADY-T1-GE3 18-Jul-08 Si4483A S-82659-Rev

    Si4483A

    Abstract: Si4483ADY
    Text: Si4483ADY Vishay Siliconix P-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () ID (A)d 0.0088 at VGS = - 10 V - 19.2 0.0153 at VGS = - 4.5 V - 14.6 VDS (V) - 30 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET


    Original
    PDF Si4483ADY 2002/95/EC Si4483ADY-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 Si4483A

    Untitled

    Abstract: No abstract text available
    Text: Si4483ADY Vishay Siliconix P-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () ID (A)d 0.0088 at VGS = - 10 V - 19.2 0.0153 at VGS = - 4.5 V - 14.6 VDS (V) - 30 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET


    Original
    PDF Si4483ADY 2002/95/EC Si4483ADY-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    Si4483A

    Abstract: No abstract text available
    Text: Si4483ADY Vishay Siliconix P-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () ID (A)d 0.0088 at VGS = - 10 V - 19.2 0.0153 at VGS = - 4.5 V - 14.6 VDS (V) - 30 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET


    Original
    PDF Si4483ADY 2002/95/EC Si4483ADY-T1-GE3 11-Mar-11 Si4483A

    Untitled

    Abstract: No abstract text available
    Text: Si4483ADY Vishay Siliconix P-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () ID (A)d 0.0088 at VGS = - 10 V - 19.2 0.0153 at VGS = - 4.5 V - 14.6 VDS (V) - 30 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET


    Original
    PDF Si4483ADY 2002/95/EC Si4483ADY-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    si7121

    Abstract: Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836
    Text: V ishay I ntertechnology, I nc . MOSFETs - Comprehensive Power MOSFET Technology Range I INNOVAT AND TEC O L OGY Vishay Siliconix N HN Power mosfets O 19 62-2012 Low to High Voltage Power MOSFETs ChipFET P o w e r PA K ® P o l a r PA K ® P o w e r PA I R ®


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    PDF Mediu33-4-9337-2727 VMN-SG2127-1210 si7121 Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836

    Diode SOT-23 marking 15d

    Abstract: SI4210 si4812b SI-4102 SI7149DP SiM400 si4932 si7135 SiB914 SI4477
    Text: V ISHAY INTERTECHN O L O G Y , INC . M O S F ET s LITTLE F O O T LITTLE F O O T ® P l u s Tr e n c h F E T ® Sk yFE T® Tu r b o F E T ® ChipFE T® P o w e r PA K ® P o l a r PA K ® P o w e r PA I R w w w. v i s h a y. c o m Selector Guide low-voltage Power MOSFETs


    Original
    PDF Diod92 VMN-SG2127-0911 Diode SOT-23 marking 15d SI4210 si4812b SI-4102 SI7149DP SiM400 si4932 si7135 SiB914 SI4477

    RTL8105E

    Abstract: KB930 rts5137 rts-5137 SY8033BDBC ENE KB9012 la-7201p ISL95831CRZ-T rtl8105 FCBGA989
    Text: A B C D E 1 1 PWWHA 2 Delhi 10RG 2 LA-7201P REV 1.0 Schematic 3 Intel Processor Sandy Bridge / PCH(Cougar Point) 2011-01-31 Rev 1.0 3 4 4 Compal Electronics, Inc. Compal Secret Data Security Classification 2010/09/03 Issued Date Deciphered Date 2012/12/31


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    PDF LA-7201P RTL8105E KB930 rts5137 rts-5137 SY8033BDBC ENE KB9012 ISL95831CRZ-T rtl8105 FCBGA989