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    SI4362BDY Price and Stock

    Vishay Siliconix SI4362BDY-T1-E3

    MOSFET N-CH 30V 29A 8SO
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    DigiKey SI4362BDY-T1-E3 Reel 2,500
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    Vishay Siliconix SI4362BDY-T1-GE3

    MOSFET N-CH 30V 29A 8SO
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SI4362BDY-T1-GE3 Reel 2,500
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    Vishay Intertechnologies SI4362BDY-T1-GE3

    MOSFET 30V 19.8A 6.6W 4.6mohm @ 10V
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    Mouser Electronics SI4362BDY-T1-GE3
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    Vishay Intertechnologies SI4362BDY-T1-E3

    MOSFET 30V 19.8A 6.6W
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    Mouser Electronics SI4362BDY-T1-E3
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    SI4362BDY Datasheets (4)

    Part ECAD Model Manufacturer Description Curated Type PDF
    SI4362BDY Vaishali Semiconductor N-Channel 30-V (D-S) Reduced Qgd, Fast Switching WFET Original PDF
    SI4362BDY-RC Vishay Siliconix R-C Thermal Model Parameters Original PDF
    SI4362BDY-T1-E3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 30V 29A 8-SOIC Original PDF
    SI4362BDY-T1-GE3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 30V 29A 8-SOIC Original PDF

    SI4362BDY Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: Si4362BDY New Product Vishay Siliconix N-Channel 30–V D–S MOSFET PRODUCT SUMMARY rDS(on) (W) ID (A)a 0.0046 @ VGS = 10 V 19.8 0.0054 @ VGS = 4.5 V 18.2 VDS (V) 30 FEATURES Qg (Typ) 36 nC D TrenchFETr Power MOSFET D Optimized for “Low Side” Synchronous


    Original     		PDF Si4362BDY Si4362BDY-T1 08-Apr-05

    73832

    Abstract: 3203 MOSFET a 4503 data sheet A 4503 4503 MOSFET AN609 Si4362BDY
    Text: Si4362BDY_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].


    Original     		PDF Si4362BDY AN609 03-Mar-06 73832 3203 MOSFET a 4503 data sheet A 4503 4503 MOSFET

    74137

    Abstract: datasheet 74137 Si4362BDY
    Text: SPICE Device Model Si4362BDY Vishay Siliconix N-Channel 30-V D-S Reduced Qgd, Fast Switching WFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		PDF Si4362BDY S-52211Rev. 24-Oct-05 74137 datasheet 74137

    Untitled

    Abstract: No abstract text available
    Text: Si4362BDY Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0046 at VGS = 10 V 19.8 0.0054 at VGS = 4.5 V 18.2 VDS (V) 30 Qg (Typ.) 36 nC • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET


    Original     		PDF Si4362BDY Si4362BDY-T1-E3 Si4362BDY-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Si4362BDY

    Abstract: Si4362BDY-T1-E3 "Package SO-8" Si4362DY Si4362DY-T1 Si4362DY-T1-E3
    Text: Specification Comparison Vishay Siliconix Si4362BDY vs. Si4362DY Description: Package: Pin Out: N-Channel, 30 V D-S MOSFET SO-8 Identical Part Number Replacements: Si4362BDY-T1-E3 Replaces Si4362DY-T1-E3 Si4362BDY-T1-E3 Replaces Si4362DY-T1 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)


    Original     		PDF Si4362BDY Si4362DY Si4362BDY-T1-E3 Si4362DY-T1-E3 Si4362DY-T1 31-Oct-06 "Package SO-8"

    Si4362BDY

    Abstract: TB-17
    Text: Si4362BDY New Product Vishay Siliconix N-Channel 30–V D–S MOSFET PRODUCT SUMMARY rDS(on) (W) ID (A)a 0.0046 @ VGS = 10 V 19.8 0.0054 @ VGS = 4.5 V 18.2 VDS (V) 30 FEATURES Qg (Typ) 36 nC D TrenchFETr Power MOSFET D Optimized for “Low Side” Synchronous


    Original     		PDF Si4362BDY Si4362BDY-T1 52011--Rev. TB-17

    TB-17

    Abstract: Si4362BDY Si4362BDY-T1-E3
    Text: Si4362BDY Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0046 at VGS = 10 V 19.8 0.0054 at VGS = 4.5 V 18.2 VDS (V) 30 Qg (Typ.) 36 nC • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET


    Original     		PDF Si4362BDY Si4362BDY-T1-E3 Si4362BDY-T1-GE3 18-Jul-08 TB-17

    74137

    Abstract: datasheet 74137 Si4362BDY
    Text: SPICE Device Model Si4362BDY Vishay Siliconix N-Channel 30-V D-S Reduced Qgd, Fast Switching WFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		PDF Si4362BDY 18-Jul-08 74137 datasheet 74137

    Untitled

    Abstract: No abstract text available
    Text: Si4362BDY New Product Vishay Siliconix N-Channel 30–V D–S MOSFET PRODUCT SUMMARY rDS(on) (W) ID (A)a 0.0046 @ VGS = 10 V 19.8 0.0054 @ VGS = 4.5 V 18.2 VDS (V) 30 FEATURES Qg (Typ) 36 nC D TrenchFETr Power MOSFET D Optimized for “Low Side” Synchronous


    Original     		PDF Si4362BDY Si4362BDY-T1 18-Jul-08

    q406 transistor

    Abstract: SI9120 equivalent Q406 q406 SUM65N20-30 Si3456BDV SPICE Device Model sud*50n025 Si4304DY 0038 tsop Si2325DS
    Text: Power MOSFETS for DC/DC Applications Vishay Siliconix 2201 Laurelwood Road P.O. Box 54951 Santa Clara, CA 95056 Phone: +1 408 988 8000 Fax: +1 408 567 8950 www.vishay.com NOTICE Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or anyone on its behalf, assumes no


    Original     		PDF SiP41109 SiP41110 SiP41111 75/2A q406 transistor SI9120 equivalent Q406 q406 SUM65N20-30 Si3456BDV SPICE Device Model sud*50n025 Si4304DY 0038 tsop Si2325DS