Si4362DY
Abstract: No abstract text available
Text: SPICE Device Model Si4362DY Vishay Siliconix N-Channel 30-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range
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Si4362DY
18-Jul-08
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Si4362DY
Abstract: No abstract text available
Text: Si4362DY New Product Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES D TrenchFETr Power MOSFET D Optimized for “Low Side” Synchronous Rectifier Operation D 100% RG Tested PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) ID (A) 0.0045 @ VGS = 10 V 20 0.0055 @ VGS = 4.5 V
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Si4362DY
S-03662--Rev.
14-Apr-03
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Si4362DY
Abstract: No abstract text available
Text: SPICE Device Model Si4362DY Vishay Siliconix N-Channel 30-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range
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Si4362DY
S-50836Rev.
16-May-05
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Si4362DY
Abstract: Si4362DY-T1
Text: Si4362DY Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES D TrenchFETr Power MOSFET D Optimized for “Low Side” Synchronous Rectifier Operation D 100% Rg Tested PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) ID (A) 0.0045 @ VGS = 10 V 20 APPLICATIONS 0.0055 @ VGS = 4.5 V
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Si4362DY
Si4362DY-T1
Si4362DY--E3
Si4362DY-T1--E3
18-Jul-08
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Si4362DY
Abstract: Si4362DY-T1
Text: Si4362DY Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES D TrenchFETr Power MOSFET D Optimized for “Low Side” Synchronous Rectifier Operation D 100% Rg Tested PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) ID (A) 0.0045 @ VGS = 10 V 20 APPLICATIONS 0.0055 @ VGS = 4.5 V
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Si4362DY
Si4362DY-T1
Si4362DY--E3
Si4362DY-T1--E3
S-40762--Rev.
19-Apr-04
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Si4362BDY
Abstract: Si4362BDY-T1-E3 "Package SO-8" Si4362DY Si4362DY-T1 Si4362DY-T1-E3
Text: Specification Comparison Vishay Siliconix Si4362BDY vs. Si4362DY Description: Package: Pin Out: N-Channel, 30 V D-S MOSFET SO-8 Identical Part Number Replacements: Si4362BDY-T1-E3 Replaces Si4362DY-T1-E3 Si4362BDY-T1-E3 Replaces Si4362DY-T1 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
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Si4362BDY
Si4362DY
Si4362BDY-T1-E3
Si4362DY-T1-E3
Si4362DY-T1
31-Oct-06
"Package SO-8"
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Untitled
Abstract: No abstract text available
Text: Si4362DY Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES D TrenchFETr Power MOSFET D Optimized for “Low Side” Synchronous Rectifier Operation D 100% Rg Tested PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) ID (A) 0.0045 @ VGS = 10 V 20 APPLICATIONS 0.0055 @ VGS = 4.5 V
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Si4362DY
Si4362DY-T1
Si4362DY--E3
Si4362DY-T1--E3
08-Apr-05
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Untitled
Abstract: No abstract text available
Text: Si4362DY New Product Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES D TrenchFETr Power MOSFET D Optimized for “Low Side” Synchronous Rectifier Operation PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) ID (A) 0.00525 @ VGS = 10 V 20 0.00625 @ VGS = 4.5 V
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Si4362DY
S-04713--Rev.
13-Sep-01
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Si4362DY
Abstract: No abstract text available
Text: \\\ SPICE Device Model Si4362DY Vishay Siliconix N-Channel 30-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range
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Si4362DY
0-to-10V
12-Jun-02
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AN609
Abstract: Si4362DY
Text: Si4362DY_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].
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Si4362DY
AN609
13-Jan-06
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Untitled
Abstract: No abstract text available
Text: Si4362DY Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES D TrenchFETr Power MOSFET D Optimized for “Low Side” Synchronous Rectifier Operation D 100% Rg Tested PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) ID (A) 0.0045 @ VGS = 10 V 20 APPLICATIONS 0.0055 @ VGS = 4.5 V
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Si4362DY
Si4362DY-T1
Si4362DY--E3
Si4362DY-T1--E3
08-Apr-05
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Untitled
Abstract: No abstract text available
Text: Si4362DY New Product Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES D TrenchFETr Power MOSFET D Optimized for “Low Side” Synchronous Rectifier Operation PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) ID (A) 0.0045 @ VGS = 10 V 20 0.0055 @ VGS = 4.5 V 19
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Si4362DY
S-20039--Rev.
04-Mar-02
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ETH1-230LD
Abstract: ETH1-230L pa1558nl pA1558 PIN DIAGRAM on pad for RJ45 LTC4259A LTC4264 DF1501S SMAJ58A IEEE 802.11n
Text: LTC4264 High Power PD Interface Controller with 750mA Current Limit DESCRIPTION FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ Complete High Power PD Interface Controller IEEE 802.3af Compliant Onboard 750mA Power MOSFET Complementary Power Good Outputs
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LTC4264
750mA
750mA
LTC4263-1
LTC4267
400mA
200kHz
4264f
ETH1-230LD
ETH1-230L
pa1558nl
pA1558
PIN DIAGRAM on pad for RJ45
LTC4259A
LTC4264
DF1501S
SMAJ58A
IEEE 802.11n
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340 opto isolator
Abstract: adapter 12v,2A 5V,2A kelvin 1102 HD01 LTC4269-1 LTC4269C-1 LTC4269CDKD-1 LTC4269I-1 LTC4269IDKD-1 PA1558NL
Text: LTC4269-1 IEEE 802.3at PD with Synchronous No-Opto Flyback Controller DESCRIPTION FEATURES n n n n n n n n n n n n The LTC 4269-1 is an integrated Powered Device PD controller and switching regulator intended for high power IEEE 802.3at and 802.3af applications. The
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LTC4269-1
LTC4269-1
LTC4268-1
750mA
LTC4269-2
100kHz
500kHz
42691fb
340 opto isolator
adapter 12v,2A 5V,2A
kelvin 1102
HD01
LTC4269C-1
LTC4269CDKD-1
LTC4269I-1
LTC4269IDKD-1
PA1558NL
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170M
Abstract: IRF7811A Si4364DY Si4416DY Si4420DY Si4842DY Si4880DY in-line switch
Text: Presented at PCIM Conference, May 14-16, 2002, Nuremburg, Germany Ultra-High Cell Density TrenchFET Devices: Obtaining the Critical Balance of Switching Performance Versus On-Resistance and Its Associated Impact on Device Selection Guy Moxey: Vishay Siliconix, Bracknell, UK
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NV18
Abstract: isl6247 transistor SMD w26 Socket AM2 Compal Electronics SMD SOT23 A53 rt8101l p25 BTQ00 RTL8101L compal
Text: A B C D E 1 2 1 BTQ00 Rev1.0 Schematics Document 2 Intel Prescott uFCPGA-478 / P4 Northwood with Springdale / ICH5 / nVIDIA NV18/34/31M chipset 2003/05/15 3 3 4 4 Compal Electronics, Inc. Title THIS SHEET OF ENGINEERING DRAWING IS THE PROPRIETARY PROPERTY OF COMPAL ELECTRONICS, INC. AND CONTAINS CONFIDENTIAL
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BTQ00
uFCPGA-478
NV18/34/31M
LA-1841
PR113
NV18
isl6247
transistor SMD w26
Socket AM2
Compal Electronics
SMD SOT23 A53
rt8101l
p25 BTQ00
RTL8101L
compal
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foxconn
Abstract: compal Compal Electronics BT122 DJ1U
Text: A B C D E F G H I J 1 1 2 2 3 3 LA-1511 REV1.0 Schematics Document uFCBGA/uFCPGA Northwood with Brookdale chipset 845MP+ICH3-M 4 5 4 5 6 6 BOM 記號 7 7 8 Title THIS SHEET OF ENGINEERING DRAWING IS THE PROPRIETARY PROPERTY OF COMPAL ELECTRONICS,INC. AND CONTAINS CONFIDENTIAL
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LA-1511
845MP
LA-1511
foxconn
compal
Compal Electronics
BT122
DJ1U
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KB3910
Abstract: DCL51 LA-1881 LA1881REV foxconn Compal Electronics BGA421 RTL8101L compal RT810
Text: A B C D E 1 1 Compal Confidential 2 2 DCL51 Schematics Document Banias uFCBGA/uFCPGA Package with Montara-GM Core Logic 2003-06-12 3 3 REV: 1.0 4 4 Compal Electronics, Inc. Title SCHEMATIC M/B LA-1881 THIS SHEET OF ENGINEERING DRAWING IS THE PROPRIETARY PROPERTY OF COMPAL ELECTRONICS, INC. AND CONTAINS CONFIDENTIAL
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DCL51
LA-1881
TPRH6D38
TPRH6D38-N.
PR311
PJP11
pc151
pc174
pc198
KB3910
LA-1881
LA1881REV
foxconn
Compal Electronics
BGA421
RTL8101L
compal
RT810
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BCM2035
Abstract: R387 sld9630 Broadcom BCM2035 BCM203 MTW355 quanta quanta computer quanta mw1 915GM
Text: 1 2 3 4 5 6 7 8 5VPCU 5V / 3.3V / 12V 3VPCU Page : 31 +12V Centrino +5V MAX1999 DOTHAN/YONAH CELERON-M CLOCK GEN ICS ICS954201 3V_S5 A 5VSUS +3V VCC_CORE GMCH_VTT MW1 Page 4,5 INTEL SOCKET 479 CPU A Page 3 PCIE 3VSUS NVidia MXM HOST BUS 533MHz NV43 LANVCC
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ICS954201
MAX1999
533MHz
400/533MHZ
915GM/PM/GML
TPS51116
A07/P28/
A08/P16/
A09/P24/
A10/P23/
BCM2035
R387
sld9630
Broadcom BCM2035
BCM203
MTW355
quanta
quanta computer
quanta mw1
915GM
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GL3220
Abstract: Compal Electronics Ali 3601 compal k5w12 LA-1421 fdv301
Text: A B C D E 1 2 1 LA-1421 Schematics Document uFCBGA/uFCPGA for Celeron/ Coppermine-T and Tualatin CPU Ver1.0 2 Almador-M 830-MG + ICH3 + VCH 3 3 4 4 Title Compal Electronics, inc. SCHEMATIC, M/B LA-1421 THIS SHEET OF ENGINEERING DRAWING IS THE PROPRIETARY PROPERTY OF COMPAL ELECTRONICS, INC. AND CONTAINS CONFIDENTIAL
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LA-1421
830-MG)
10Ohm
GL3220
Compal Electronics
Ali 3601
compal
k5w12
fdv301
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OZ-165
Abstract: 47uF-0603 PU1A-12 Compal Electronics MP3R LA-1331 compal ATL02
Text: A B C D E 1 1 ACL10 LA-1331 Schematics Document 2 2 REV 2.0 For 030 INTEL Mobile P4 uFCBGA/uFCPGA Northwood MCH-M(845-MP) + ICH3-M + SQ17 3 3 4 4 Title COMPAL ELECTRONICS, INC SCHEMATIC, M/B LA-1331 THIS SHEET OF ENGINEERING DRAWING IS THE PROPRIETARY PROPERTY OF COMPAL ELECTRONICS,INC. AND CONTAINS CONFIDENTIAL AND TRADE SECRET INFORMATION . THIS SHEET MAY NOT BE
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ACL10
LA-1331
845-MP)
LA-1331
MAX6654MEE
NE1617
W320-04
ICS9508-05
OZ-165
47uF-0603
PU1A-12
Compal Electronics
MP3R
compal
ATL02
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LPC47N227 IO CHIP
Abstract: MONTARA-GT foxconn RTL8101L LA-1931 Compal Electronics smd transistor hl6 hp desktop pc schematic isl6247 g25 SMD Transistor
Text: A B C D E COMPAL CONFIDENTIAL 1 MODEL NAME : DBL10 - Sapporo X COMPAL P/N : DA8BL10L000 PCB NO : LA-1931 Revision : 0.2 1 DBL10 - Sapporo X Schematics Document 2 2 uFCBGA/uFCPGA NorthWood MT 2003-06-09 0.2 Gerber Out Version 3 3 4 4 Compal Electronics, Inc.
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DBL10
DA8BL10L000
LA-1931
LPC47N227 IO CHIP
MONTARA-GT
foxconn
RTL8101L
Compal Electronics
smd transistor hl6
hp desktop pc schematic
isl6247
g25 SMD Transistor
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BTK20
Abstract: la1521 foxconn LA-1521 h1 m6c Compal Electronics VMD20 VMD29 foxcoon ALI C
Text: A B C D E 1 1 SHANGHAI 100 BTK20 LA-1521 Schematics Document 2 2 REV 1.0A PVT2 INTEL Mobile P4 uFCBGA/uFCPGA Northwood Celeron MCH-M 845MZ + ICH3-M + M6-C(16MB VRAM) 3 3 4 4 Title Compal Electronics, inc. THIS SHEET OF ENGINEERING DRAWING IS THE PROPRIETARY PROPERTY OF COMPAL ELECTRONICS, INC. AND CONTAINS CONFIDENTIAL
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BTK20
LA-1521
845MZ)
LA-1521
PC114
1000PF
PR150
SI91822DH-12-T1
PR140
la1521
foxconn
h1 m6c
Compal Electronics
VMD20
VMD29
foxcoon
ALI C
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SiS 961
Abstract: l9829 compal mmbt3906 ZA LA-1341 Compal Electronics HB-1M2012-121JT ACY25 D8ZA
Text: A B C D E 1 1 Compal confidential Schematics Document 2 2 Mobile P4 uFCBGA/uFCPGA with SIS 650/961 core logic chip 2002-05-13 REV:1.0 3 3 4 4 Compal Electronics, Inc. Title THIS SHEET OF ENGINEERING DRAWING IS THE PROPRIETARY PROPERTY OF COMPAL ELECTRONICS, INC. AND CONTAINS CONFIDENTIAL
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LA-1341
SiS 961
l9829
compal
mmbt3906 ZA
LA-1341
Compal Electronics
HB-1M2012-121JT
ACY25
D8ZA
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