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    SI4362 Price and Stock

    Silicon Laboratories Inc SI4362-C2A-GMR

    RF RCVR FSK 142MHZ-1.05GHZ 20QFN
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    DigiKey SI4362-C2A-GMR Reel 42,500 2,500
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    SI4362-C2A-GMR Cut Tape 1,574 1
    • 1 $4.46
    • 10 $4.092
    • 100 $3.3484
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    SI4362-C2A-GMR Digi-Reel 1
    • 1 $4.46
    • 10 $4.092
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    Mouser Electronics SI4362-C2A-GMR 12,594
    • 1 $4.02
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    • 100 $3.28
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    Verical SI4362-C2A-GMR 1,769 2
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    Newark SI4362-C2A-GMR Cut Tape 2,000 1
    • 1 $4.63
    • 10 $4.31
    • 100 $3.68
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    Bristol Electronics SI4362-C2A-GMR 90,984
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    Quest Components SI4362-C2A-GMR 72,787
    • 1 $7.776
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    • 1000 $3.888
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    SI4362-C2A-GMR 5,556
    • 1 $6.756
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    • 1000 $3.378
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    Flip Electronics SI4362-C2A-GMR 10,000
    • 1 $1.65
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    Symmetry Electronics SI4362-C2A-GMR 1
    • 1 $3.49
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    Silicon Laboratories Inc SI4362-B1B-FM

    RF RX FSK 142MHZ-1.05GHZ 20QFN
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    DigiKey SI4362-B1B-FM Tray 1,335 1
    • 1 $4.46
    • 10 $4.092
    • 100 $3.34838
    • 1000 $3.275
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    Mouser Electronics SI4362-B1B-FM
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    Verical SI4362-B1B-FM 475 3
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    Newark SI4362-B1B-FM Bulk 1
    • 1 $3.93
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    Symmetry Electronics SI4362-B1B-FM 1
    • 1 $3.49
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    Win Source Electronics SI4362-B1B-FM 8,040
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    • 100 $3.203
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    Silicon Laboratories Inc SI4362-C2A-GM

    IC RECEIVER/ADC 20QFN
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SI4362-C2A-GM Tray 411 1
    • 1 $6.45
    • 10 $4.952
    • 100 $4.04638
    • 1000 $3.35281
    • 10000 $3.35281
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    Mouser Electronics SI4362-C2A-GM 2,831
    • 1 $5.79
    • 10 $5.56
    • 100 $4.36
    • 1000 $3.57
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    Verical SI4362-C2A-GM 1,470 2
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    • 100 $3.868
    • 1000 $3.336
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    Newark SI4362-C2A-GM Bulk 1
    • 1 $6.02
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    Symmetry Electronics SI4362-C2A-GM 1
    • 1 $3.49
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    Silicon Laboratories Inc SI4362-B0B-FM

    RF RX FSK 142MHZ-1.05GHZ 20QFN
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    DigiKey SI4362-B0B-FM Tube
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    Silicon Laboratories Inc SI4362-B1B-FMR

    IC EZRADIO PRO RX 20QFN
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SI4362-B1B-FMR Digi-Reel 1
    • 1 $6.35
    • 10 $6.35
    • 100 $6.35
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    SI4362-B1B-FMR Reel 2,500
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    SI4362-B1B-FMR Cut Tape 1
    • 1 $6.35
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    Mouser Electronics SI4362-B1B-FMR 4,306
    • 1 $3.38
    • 10 $3.33
    • 100 $3.28
    • 1000 $3.28
    • 10000 $3.19
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    Verical SI4362-B1B-FMR 5,623 2
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    • 10 $4.3444
    • 100 $4.3444
    • 1000 $4.3444
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    Bristol Electronics SI4362-B1B-FMR 2,335
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    Quest Components SI4362-B1B-FMR 1,868
    • 1 $7.656
    • 10 $7.656
    • 100 $7.656
    • 1000 $3.828
    • 10000 $3.828
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    Symmetry Electronics SI4362-B1B-FMR 1
    • 1 $3.49
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    Win Source Electronics SI4362-B1B-FMR 8,000
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    Find more SI4362 price and stock on Findchips.com

    SI4362 Datasheets (14)

    Part ECAD Model Manufacturer Description Curated Type PDF
    SI4362-B0B-FM Silicon Laboratories RF Receivers, RF/IF and RFID, RECEIVER RF EZRADIO PRO 20QFN Original PDF
    SI4362-B1B-FM Silicon Laboratories RF Receivers, RF/IF and RFID, IC EZRADIO PRO RX 20QFN Original PDF
    SI4362-B1B-FMR Silicon Laboratories RF Receivers, RF/IF and RFID, IC EZRADIO PRO RX 20QFN Original PDF
    SI4362BDY Vaishali Semiconductor N-Channel 30-V (D-S) Reduced Qgd, Fast Switching WFET Original PDF
    SI4362BDY-RC Vishay Siliconix R-C Thermal Model Parameters Original PDF
    SI4362BDY-T1-E3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 30V 29A 8-SOIC Original PDF
    SI4362BDY-T1-GE3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 30V 29A 8-SOIC Original PDF
    SI4362-C2A-GM Silicon Labs Integrated Circuits (ICs) - Data Acquisition - ADCs/DACs - Special Purpose - EZRADIOPRO SUB GHZ RECEIVER, -11 Original PDF
    SI4362-C2A-GMR Silicon Labs RF/IF and RFID - RF Receivers - IC RCVR EZRADIO SUB GHZ 20QFN Original PDF
    SI4362DY Vishay Siliconix N-Channel 30-V (D-S) MOSFET Original PDF
    Si4362DY-E3 Vishay Siliconix N-Channel 30-V (D-S) MOSFET Original PDF
    Si4362DY SPICE Device Model Vishay N-Channel 30-V (D-S) MOSFET Original PDF
    Si4362DY-T1 Vishay Siliconix N-Channel 30-V (D-S) MOSFET Original PDF
    Si4362DY-T1E3 Vishay Siliconix N-Channel 30-V (D-S) MOSFET Original PDF

    SI4362 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Si4362DY

    Abstract: No abstract text available
    Text: SPICE Device Model Si4362DY Vishay Siliconix N-Channel 30-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		PDF Si4362DY 18-Jul-08

    Untitled

    Abstract: No abstract text available
    Text: Si4362BDY New Product Vishay Siliconix N-Channel 30–V D–S MOSFET PRODUCT SUMMARY rDS(on) (W) ID (A)a 0.0046 @ VGS = 10 V 19.8 0.0054 @ VGS = 4.5 V 18.2 VDS (V) 30 FEATURES Qg (Typ) 36 nC D TrenchFETr Power MOSFET D Optimized for “Low Side” Synchronous


    Original     		PDF Si4362BDY Si4362BDY-T1 08-Apr-05

    Si446x

    Abstract: si4432 AN-625 AN625 AN62 ipc 7351 ezra Si4432 9-pin
    Text: Si4362 H I GH -P E R F O R M A N C E , L O W -C U R R E N T R E C E I V E R Features  Frequency  Excellent selectivity performance range = 142–1050 MHz 60 dB adjacent channel 75 dB blocking at 1 MHz  Receive sensitivity = –126 dBm


    Original     		PDF Si4362 Si4362 Si446x si4432 AN-625 AN625 AN62 ipc 7351 ezra Si4432 9-pin

    Si4362DY

    Abstract: No abstract text available
    Text: Si4362DY New Product Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES D TrenchFETr Power MOSFET D Optimized for “Low Side” Synchronous Rectifier Operation D 100% RG Tested PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) ID (A) 0.0045 @ VGS = 10 V 20 0.0055 @ VGS = 4.5 V


    Original     		PDF Si4362DY S-03662--Rev. 14-Apr-03

    73832

    Abstract: 3203 MOSFET a 4503 data sheet A 4503 4503 MOSFET AN609 Si4362BDY
    Text: Si4362BDY_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].


    Original     		PDF Si4362BDY AN609 03-Mar-06 73832 3203 MOSFET a 4503 data sheet A 4503 4503 MOSFET

    Si4362DY

    Abstract: No abstract text available
    Text: SPICE Device Model Si4362DY Vishay Siliconix N-Channel 30-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		PDF Si4362DY S-50836Rev. 16-May-05

    Si4362DY

    Abstract: Si4362DY-T1
    Text: Si4362DY Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES D TrenchFETr Power MOSFET D Optimized for “Low Side” Synchronous Rectifier Operation D 100% Rg Tested PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) ID (A) 0.0045 @ VGS = 10 V 20 APPLICATIONS 0.0055 @ VGS = 4.5 V


    Original     		PDF Si4362DY Si4362DY-T1 Si4362DY--E3 Si4362DY-T1--E3 18-Jul-08

    74137

    Abstract: datasheet 74137 Si4362BDY
    Text: SPICE Device Model Si4362BDY Vishay Siliconix N-Channel 30-V D-S Reduced Qgd, Fast Switching WFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		PDF Si4362BDY S-52211Rev. 24-Oct-05 74137 datasheet 74137

    Si446x

    Abstract: No abstract text available
    Text: AN643 Si446x/Si4362 RX LNA Matching 1. Introduction The purpose of this application note is to provide a description of the impedance matching of the RX differential low noise amplifier LNA on the Si446x/Si4362 family of RFICs. It is desired to simultaneously achieve two goals with the matching network:


    Original     		PDF AN643 Si446x/Si4362 Si446x

    Untitled

    Abstract: No abstract text available
    Text: Si4362BDY Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0046 at VGS = 10 V 19.8 0.0054 at VGS = 4.5 V 18.2 VDS (V) 30 Qg (Typ.) 36 nC • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET


    Original     		PDF Si4362BDY Si4362BDY-T1-E3 Si4362BDY-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    SI4432

    Abstract: AN625 Si4432 9-pin 43621B AN-625
    Text: Si4362 H I GH -P E R F O R M A N C E , L O W -C U R R E N T R E C E I V E R Features  Frequency  Excellent selectivity performance range = 142–1050 MHz 60 dB adjacent channel 75 dB blocking at 1 MHz  Receive sensitivity = –126 dBm


    Original     		PDF Si4362 Si4362 SI4432 AN625 Si4432 9-pin 43621B AN-625

    Si4362DY

    Abstract: Si4362DY-T1
    Text: Si4362DY Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES D TrenchFETr Power MOSFET D Optimized for “Low Side” Synchronous Rectifier Operation D 100% Rg Tested PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) ID (A) 0.0045 @ VGS = 10 V 20 APPLICATIONS 0.0055 @ VGS = 4.5 V


    Original     		PDF Si4362DY Si4362DY-T1 Si4362DY--E3 Si4362DY-T1--E3 S-40762--Rev. 19-Apr-04

    Si4362BDY

    Abstract: Si4362BDY-T1-E3 "Package SO-8" Si4362DY Si4362DY-T1 Si4362DY-T1-E3
    Text: Specification Comparison Vishay Siliconix Si4362BDY vs. Si4362DY Description: Package: Pin Out: N-Channel, 30 V D-S MOSFET SO-8 Identical Part Number Replacements: Si4362BDY-T1-E3 Replaces Si4362DY-T1-E3 Si4362BDY-T1-E3 Replaces Si4362DY-T1 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)


    Original     		PDF Si4362BDY Si4362DY Si4362BDY-T1-E3 Si4362DY-T1-E3 Si4362DY-T1 31-Oct-06 "Package SO-8"

    Untitled

    Abstract: No abstract text available
    Text: Si4362DY Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES D TrenchFETr Power MOSFET D Optimized for “Low Side” Synchronous Rectifier Operation D 100% Rg Tested PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) ID (A) 0.0045 @ VGS = 10 V 20 APPLICATIONS 0.0055 @ VGS = 4.5 V


    Original     		PDF Si4362DY Si4362DY-T1 Si4362DY--E3 Si4362DY-T1--E3 08-Apr-05

    Si4362BDY

    Abstract: TB-17
    Text: Si4362BDY New Product Vishay Siliconix N-Channel 30–V D–S MOSFET PRODUCT SUMMARY rDS(on) (W) ID (A)a 0.0046 @ VGS = 10 V 19.8 0.0054 @ VGS = 4.5 V 18.2 VDS (V) 30 FEATURES Qg (Typ) 36 nC D TrenchFETr Power MOSFET D Optimized for “Low Side” Synchronous


    Original     		PDF Si4362BDY Si4362BDY-T1 52011--Rev. TB-17

    Si4362DY

    Abstract: No abstract text available
    Text: \\\ SPICE Device Model Si4362DY Vishay Siliconix N-Channel 30-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		PDF Si4362DY 0-to-10V 12-Jun-02

    AN609

    Abstract: Si4362DY
    Text: Si4362DY_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].


    Original     		PDF Si4362DY AN609 13-Jan-06

    TB-17

    Abstract: Si4362BDY Si4362BDY-T1-E3
    Text: Si4362BDY Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0046 at VGS = 10 V 19.8 0.0054 at VGS = 4.5 V 18.2 VDS (V) 30 Qg (Typ.) 36 nC • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET


    Original     		PDF Si4362BDY Si4362BDY-T1-E3 Si4362BDY-T1-GE3 18-Jul-08 TB-17

    74137

    Abstract: datasheet 74137 Si4362BDY
    Text: SPICE Device Model Si4362BDY Vishay Siliconix N-Channel 30-V D-S Reduced Qgd, Fast Switching WFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		PDF Si4362BDY 18-Jul-08 74137 datasheet 74137

    Untitled

    Abstract: No abstract text available
    Text: Si4362BDY New Product Vishay Siliconix N-Channel 30–V D–S MOSFET PRODUCT SUMMARY rDS(on) (W) ID (A)a 0.0046 @ VGS = 10 V 19.8 0.0054 @ VGS = 4.5 V 18.2 VDS (V) 30 FEATURES Qg (Typ) 36 nC D TrenchFETr Power MOSFET D Optimized for “Low Side” Synchronous


    Original     		PDF Si4362BDY Si4362BDY-T1 18-Jul-08

    Untitled

    Abstract: No abstract text available
    Text: Si4362DY Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES D TrenchFETr Power MOSFET D Optimized for “Low Side” Synchronous Rectifier Operation D 100% Rg Tested PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) ID (A) 0.0045 @ VGS = 10 V 20 APPLICATIONS 0.0055 @ VGS = 4.5 V


    Original     		PDF Si4362DY Si4362DY-T1 Si4362DY--E3 Si4362DY-T1--E3 08-Apr-05

    Untitled

    Abstract: No abstract text available
    Text: Si4362DY New Product Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES D TrenchFETr Power MOSFET D Optimized for “Low Side” Synchronous Rectifier Operation PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) ID (A) 0.0045 @ VGS = 10 V 20 0.0055 @ VGS = 4.5 V 19


    Original     		PDF Si4362DY S-20039--Rev. 04-Mar-02

    ETH1-230LD

    Abstract: ETH1-230L pa1558nl pA1558 PIN DIAGRAM on pad for RJ45 LTC4259A LTC4264 DF1501S SMAJ58A IEEE 802.11n
    Text: LTC4264 High Power PD Interface Controller with 750mA Current Limit DESCRIPTION FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ Complete High Power PD Interface Controller IEEE 802.3af Compliant Onboard 750mA Power MOSFET Complementary Power Good Outputs


    Original     		PDF LTC4264 750mA 750mA LTC4263-1 LTC4267 400mA 200kHz 4264f ETH1-230LD ETH1-230L pa1558nl pA1558 PIN DIAGRAM on pad for RJ45 LTC4259A LTC4264 DF1501S SMAJ58A IEEE 802.11n

    bifa antenna

    Abstract: 868 printed antenna design HTA 200-S Si446x/Si4362
    Text: AN686 A NTENNAS FOR THE S i4 4 5 5 /4 3 5 X RF IC S 1. Introduction This application note provides guidelines and design examples to help users design antennas for the next generation EZRadio RF ICs. The matching principles for the Si4455 are described in detail in “AN693: Si4455


    Original     		PDF AN686 Si4455 AN693: Si4455 Si435x, Si446x AN643: Si446x/4362 AN685: Si4455/435x bifa antenna 868 printed antenna design HTA 200-S Si446x/Si4362