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Vishay Siliconix SI4200DY-T1-GE3 MOSFET 2N-CH 25V 8A 8SOIC
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DigiKey ()	SI4200DY-T1-GE3	Digi-Reel			1	1 $0.57 10 $0.57 100 $0.57 1000 $0.57 10000 $0.57	Buy Now
	SI4200DY-T1-GE3	Cut Tape				1 - 10 - 100 - 1000 - 10000 -	Buy Now
	SI4200DY-T1-GE3	Reel				1 - 10 - 100 - 1000 - 10000 -	Buy Now
Vishay Intertechnologies SI4200DY-T1-GE3
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Bristol Electronics	SI4200DY-T1-GE3		2,500			1 - 10 - 100 - 1000 - 10000 -	Get Quote
EBV Elektronik	SI4200DY-T1-GE3			143 Weeks	1	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Others SI4200DYT1GE3 AVAILABLE EU
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
ComSIT USA	SI4200DYT1GE3		3,750			1 - 10 - 100 - 1000 - 10000 -	Get Quote

SI4200DY Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
SI4200DY-T1-GE3		Vishay Siliconix	FETs - Arrays, Discrete Semiconductor Products, MOSFET 2N-CH 25V 8A 8SOIC		Original	PDF

SI4200DY Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
67125 Contextual Info: SPICE Device Model Si4200DY Vishay Siliconix Dual N-Channel 25 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C	Original	Si4200DY 18-Jul-08 67125	PDF
Contextual Info: Si4200DY Vishay Siliconix Dual N-Channel 25 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 25 RDS(on) (Ω) ID (A) 0.025 at VGS = 10 V 8a 0.030 at VGS = 4.5 V 7.9 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Gen III Power MOSFET	Original	Si4200DY 2002/95/EC Si4200DY-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12	PDF
Contextual Info: Si4200DY Vishay Siliconix Dual N-Channel 25 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 25 RDS(on) (Ω) ID (A) 0.025 at VGS = 10 V 8a 0.030 at VGS = 4.5 V 7.9 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Gen III Power MOSFET	Original	Si4200DY 2002/95/EC Si4200DY-T1-GE3 11-Mar-11	PDF
74216 Contextual Info: Si4200DY_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,	Original	Si4200DY AN609, 3426u 4216m 7811m 3599u 9461m 5641m 5572m 74216	PDF
Contextual Info: Si4200DY Vishay Siliconix Dual N-Channel 25 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 25 RDS(on) (Ω) ID (A) 0.025 at VGS = 10 V 8a 0.030 at VGS = 4.5 V 7.9 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Gen III Power MOSFET	Original	Si4200DY 2002/95/EC Si4200DY-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12	PDF
Contextual Info: Si4200DY Vishay Siliconix Dual N-Channel 25 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 25 ID (A) • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Gen III Power MOSFET • Compliant to RoHS Directive 2002/95/EC Qg (Typ.)	Original	Si4200DY 2002/95/EC Si4200DY-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12	PDF
Si4200 Abstract: si4200dy Contextual Info: Si4200DY Vishay Siliconix Dual N-Channel 25 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 25 RDS(on) (Ω) ID (A) 0.025 at VGS = 10 V 8a 0.030 at VGS = 4.5 V 7.9 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Gen III Power MOSFET	Original	Si4200DY 2002/95/EC Si4200DY-T1-GE3 18-Jul-08 Si4200	PDF
si7121 Abstract: Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836 Contextual Info: V ishay I ntertechnology, I nc . MOSFETs - Comprehensive Power MOSFET Technology Range I INNOVAT AND TEC O L OGY Vishay Siliconix N HN Power mosfets O 19 62-2012 Low to High Voltage Power MOSFETs ChipFET P o w e r PA K ® P o l a r PA K ® P o w e r PA I R ®	Original	Mediu33-4-9337-2727 VMN-SG2127-1210 si7121 Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836	PDF