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Vishay Siliconix SI4136DY-T1-GE3 MOSFET N-CH 20V 46A 8SO
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	SI4136DY-T1-GE3	Digi-Reel	2,629		1	1 $2.17 10 $1.389 100 $2.17 1000 $0.68962 10000 $0.68962	Buy Now
	SI4136DY-T1-GE3	Cut Tape	2,629		1	1 $2.17 10 $1.389 100 $2.17 1000 $0.68962 10000 $0.68962	Buy Now
	SI4136DY-T1-GE3	Reel	2,500		2,500	1 - 10 - 100 - 1000 - 10000 $0.5875	Buy Now
ES Components	SI4136DY-T1-GE3					1 - 10 - 100 - 1000 - 10000 -	Get Quote
Vishay Intertechnologies SI4136DY-T1-GE3 N-CHANNEL 20-V (D-S) MOSFET - Tape and Reel (Alt: SI4136DY-T1-GE3)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	SI4136DY-T1-GE3	Reel	5,000	16 Weeks	2,500	1 - 10 - 100 - 1000 - 10000 $0.5875	Buy Now
Mouser Electronics	SI4136DY-T1-GE3		18,684			1 $1.57 10 $1.02 100 $0.809 1000 $0.646 10000 $0.587	Buy Now
Newark	SI4136DY-T1-GE3	Reel	5,000		2,500	1 $0.588 10 $0.588 100 $0.588 1000 $0.588 10000 $0.588	Buy Now
	SI4136DY-T1-GE3	Bulk			1	1 $1.66 10 $1.24 100 $0.919 1000 $0.878 10000 $0.878	Buy Now
TTI	SI4136DY-T1-GE3	Reel	5,000		2,500	1 - 10 - 100 - 1000 - 10000 $0.588	Buy Now
EBV Elektronik	SI4136DY-T1-GE3			17 Weeks	2,500	1 - 10 - 100 - 1000 - 10000 -	Buy Now

SI4136DY Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
SI4136DY-T1-GE3		Vishay Siliconix	FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 20V 46A 8-SOIC		Original	PDF

SI4136DY Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
Untitled Abstract: No abstract text available Text: New Product Si4136DY Vishay Siliconix N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.002 at VGS = 10 V 46 0.0025 at VGS = 4.5 V 41 VDS (V) 20 • Halogen-free According to IEC 61249-2-21 • TrenchFET Power MOSFET • 100 % Rg and UIS Tested	Original	Si4136DY Si4136DY-T1-GE3 11-Mar-11	PDF
1.6946 Abstract: 40559 mosfet AN609 Text: Si4136DY_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/Tank and Cauer/Filter configurations are included. When implemented in P-Spice,	Original	Si4136DY AN609, 06-Feb-09 1.6946 40559 mosfet AN609	PDF
Untitled Abstract: No abstract text available Text: SPICE Device Model Si4136DY www.vishay.com Vishay Siliconix N-Channel 100 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C	Original	Si4136DY 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12	PDF
Untitled Abstract: No abstract text available Text: New Product Si4136DY Vishay Siliconix N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.002 at VGS = 10 V 46 0.0025 at VGS = 4.5 V 41 VDS (V) 20 • Halogen-free According to IEC 61249-2-21 • TrenchFET Power MOSFET • 100 % Rg and UIS Tested	Original	Si4136DY Si4136DY-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12	PDF
Untitled Abstract: No abstract text available Text: New Product Si4136DY Vishay Siliconix N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.002 at VGS = 10 V 46 0.0025 at VGS = 4.5 V 41 VDS (V) 20 • Halogen-free According to IEC 61249-2-21 • TrenchFET Power MOSFET • 100 % Rg and UIS Tested	Original	Si4136DY Si4136DY-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12	PDF
Untitled Abstract: No abstract text available Text: New Product Si4136DY Vishay Siliconix N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.002 at VGS = 10 V 46 0.0025 at VGS = 4.5 V 41 VDS (V) 20 • Halogen-free According to IEC 61249-2-21 • TrenchFET Power MOSFET • 100 % Rg and UIS Tested	Original	Si4136DY Si4136DY-T1-GE3 11-Mar-11	PDF
31BC30 Abstract: No abstract text available Text: New Product Si4136DY Vishay Siliconix N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.002 at VGS = 10 V 46 0.0025 at VGS = 4.5 V 41 VDS (V) 20 • Halogen-free According to IEC 61249-2-21 • TrenchFET Power MOSFET • 100 % Rg and UIS Tested	Original	Si4136DY Si4136DY-T1-GE3 18-Jul-08 31BC30	PDF
Untitled Abstract: No abstract text available Text: New Product Si4136DY Vishay Siliconix N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.002 at VGS = 10 V 46 0.0025 at VGS = 4.5 V 41 VDS (V) 20 • Halogen-free According to IEC 61249-2-21 • TrenchFET Power MOSFET • 100 % Rg and UIS Tested	Original	Si4136DY Si4136DY-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12	PDF
v 4520 Abstract: No abstract text available Text: SPICE Device Model Si4136DY Vishay Siliconix N-Channel 20-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the - 55 °C to 125 °C Temperature Range	Original	Si4136DY 18-Jul-08 v 4520	PDF
FSQ510 Equivalent Abstract: BTA12 6008 bta16 6008 ZIGBEE interface with AVR ATmega16 Precision triac control thermostat thyristor t 558 f eupec gw 5819 diode transistor a564 A564 transistor BSM25GP120 b2 Text: SEMICONDUCTORS MCU/MPU/DSP Atmel. . . . . . . . . 167, 168, 169, 170, 171, 172 Blackhawk. . . . . . . . . . . . . . . . . . . . . . . . . 173 Cyan . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 174 Cypress. . . . . . . . . . . . . . . 175, 176, 177, 178	Original	GP-20) FSQ510 Equivalent BTA12 6008 bta16 6008 ZIGBEE interface with AVR ATmega16 Precision triac control thermostat thyristor t 558 f eupec gw 5819 diode transistor a564 A564 transistor BSM25GP120 b2	PDF
Untitled Abstract: No abstract text available Text: V i s h ay I n tertec h n olo g y, I n c . Power MOSFETs M O S F ET s Tre nchFET G e n III Key features and Benefits Low conduction and switching losses enable increased efficiency and reduced power consumption • Record-breaking maximum on-resistance at VGS = 4.5 V rating	Original	VMN-PT0105-1007	PDF
si7121 Abstract: Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836 Text: V ishay I ntertechnology, I nc . MOSFETs - Comprehensive Power MOSFET Technology Range I INNOVAT AND TEC O L OGY Vishay Siliconix N HN Power mosfets O 19 62-2012 Low to High Voltage Power MOSFETs ChipFET P o w e r PA K ® P o l a r PA K ® P o w e r PA I R ®	Original	Mediu33-4-9337-2727 VMN-SG2127-1210 si7121 Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836	PDF
Diode SOT-23 marking 15d Abstract: SI4210 si4812b SI-4102 SI7149DP SiM400 si4932 si7135 SiB914 SI4477 Text: V ISHAY INTERTECHN O L O G Y , INC . M O S F ET s LITTLE F O O T LITTLE F O O T ® P l u s Tr e n c h F E T ® Sk yFE T® Tu r b o F E T ® ChipFE T® P o w e r PA K ® P o l a r PA K ® P o w e r PA I R w w w. v i s h a y. c o m Selector Guide low-voltage Power MOSFETs	Original	Diod92 VMN-SG2127-0911 Diode SOT-23 marking 15d SI4210 si4812b SI-4102 SI7149DP SiM400 si4932 si7135 SiB914 SI4477	PDF