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    SI2319CDS Price and Stock

    Vishay Siliconix SI2319CDS-T1-GE3

    MOSFET P-CH 40V 4.4A SOT23-3
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    DigiKey SI2319CDS-T1-GE3 Cut Tape 24,393 1
    • 1 $0.83
    • 10 $0.518
    • 100 $0.83
    • 1000 $0.23118
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    SI2319CDS-T1-GE3 Digi-Reel 24,393 1
    • 1 $0.83
    • 10 $0.518
    • 100 $0.83
    • 1000 $0.23118
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    SI2319CDS-T1-GE3 Reel 24,374 3,000
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    RS SI2319CDS-T1-GE3 Bulk 3,000
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    New Advantage Corporation SI2319CDS-T1-GE3 678,000 1
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    Vishay Siliconix SI2319CDS-T1-BE3

    MOSFET P-CH 40V 3.1A/4.4A SOT23
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    DigiKey SI2319CDS-T1-BE3 Reel 3,000 3,000
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    Vishay Intertechnologies SI2319CDS-T1-BE3

    Transistor MOSFET P-Channel 40V 4.4A 3-Pin SOT-23 - Tape and Reel (Alt: SI2319CDS-T1-BE3)
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    Avnet Americas SI2319CDS-T1-BE3 Reel 15,000 17 Weeks 3,000
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    SI2319CDS-T1-BE3 Ammo Pack 150 7 Weeks, 4 Days 1
    • 1 $0.55
    • 10 $0.55
    • 100 $0.326
    • 1000 $0.292
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    Mouser Electronics SI2319CDS-T1-BE3 11,824
    • 1 $0.55
    • 10 $0.449
    • 100 $0.321
    • 1000 $0.209
    • 10000 $0.169
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    Verical SI2319CDS-T1-BE3 15,000 3,000
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    Arrow Electronics SI2319CDS-T1-BE3 15,000 17 Weeks 3,000
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    Newark SI2319CDS-T1-BE3 Cut Tape 8,554 1
    • 1 $0.228
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    • 100 $0.228
    • 1000 $0.209
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    SI2319CDS-T1-BE3 Reel 3,000
    • 1 $0.22
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    • 10000 $0.199
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    TTI SI2319CDS-T1-BE3 Reel 195,000 3,000
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    Chip1Stop SI2319CDS-T1-BE3 15,000
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    Vishay Intertechnologies SI2319CDS-T1-GE3

    Trans MOSFET P-CH 40V 3.1A 3-Pin SOT-23 T/R - Tape and Reel (Alt: SI2319CDS-T1-GE3)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas SI2319CDS-T1-GE3 Reel 12,000 17 Weeks 3,000
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    Mouser Electronics SI2319CDS-T1-GE3 95,202
    • 1 $0.55
    • 10 $0.468
    • 100 $0.327
    • 1000 $0.209
    • 10000 $0.165
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    Verical SI2319CDS-T1-GE3 9,000 3,000
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    SI2319CDS-T1-GE3 2,670 37
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    Arrow Electronics SI2319CDS-T1-GE3 Cut Strips 2,670 17 Weeks 1
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    • 10 $0.4524
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    Newark SI2319CDS-T1-GE3 Cut Tape 446,723 1
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    • 10 $0.51
    • 100 $0.371
    • 1000 $0.371
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    SI2319CDS-T1-GE3 Reel 3,000
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    • 10000 $0.169
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    Bristol Electronics SI2319CDS-T1-GE3 36,000
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    Quest Components SI2319CDS-T1-GE3 28,800
    • 1 $0.529
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    • 100 $0.529
    • 1000 $0.529
    • 10000 $0.1587
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    TTI SI2319CDS-T1-GE3 Reel 15,000 3,000
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    • 1000 -
    • 10000 $0.167
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    TME SI2319CDS-T1-GE3 6,971 1
    • 1 $0.532
    • 10 $0.462
    • 100 $0.317
    • 1000 $0.239
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    Chip 1 Exchange SI2319CDS-T1-GE3 4
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    Avnet Asia SI2319CDS-T1-GE3 21 Weeks 3,000
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    Chip-Germany GmbH SI2319CDS-T1-GE3 11
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    Chip1Stop SI2319CDS-T1-GE3 2,670
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    EBV Elektronik SI2319CDS-T1-GE3 18 Weeks 3,000
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    Maritex SI2319CDS-T1-GE3 233
    • 1 $0.392
    • 10 $0.392
    • 100 $0.321
    • 1000 $0.298
    • 10000 $0.277
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    Vishay Intertechnologies SI2319CDST1GE3

    P-CHANNEL 40 V (D-S) MOSFET Small Signal Field-Effect Transistor, 4.4A I(D), 40V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    ComSIT USA SI2319CDST1GE3 900
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    Find more SI2319CDS price and stock on Findchips.com

    SI2319CDS Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SI2319CDS-T1-GE3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 40V 4.4A SOT-23 Original PDF

    SI2319CDS Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    TSS 6672-1

    Abstract: No abstract text available
    Text: Si2319CDS_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,


    Original     		PDF Si2319CDS AN609, 26-May-10 TSS 6672-1

    p7 marking

    Abstract: SI2319CDS
    Text: Si2319CDS Vishay Siliconix P-Channel 40 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 40 RDS(on) (Ω) ID (A)a 0.077 at VGS = - 10 V - 4.4 0.108 at VGS = - 4.5 V - 3.7 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET


    Original     		PDF Si2319CDS 2002/95/EC O-236 OT-23) Si2319CDS-T1-GE3 18-Jul-08 p7 marking

    Untitled

    Abstract: No abstract text available
    Text: SPICE Device Model Si2319CDS www.vishay.com Vishay Siliconix P-Channel 40 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the p-channel vertical DMOS. The subcircuit model is extracted and optimized over the -55 °C


    Original     		PDF Si2319CDS 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: Si2319CDS Vishay Siliconix P-Channel 40 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 40 RDS(on) (Ω) ID (A)a 0.077 at VGS = - 10 V - 4.4 0.108 at VGS = - 4.5 V - 3.7 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET


    Original     		PDF Si2319CDS 2002/95/EC O-236 OT-23) Si2319CDS-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A

    marking code vishay SILICONIX

    Abstract: No abstract text available
    Text: Si2319CDS Vishay Siliconix P-Channel 40 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 40 RDS(on) (Ω) ID (A)a 0.077 at VGS = - 10 V - 4.4 0.108 at VGS = - 4.5 V - 3.7 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET


    Original     		PDF Si2319CDS 2002/95/EC O-236 OT-23) Si2319CDS-T1-GE3 11-Mar-11 marking code vishay SILICONIX

    Si2319CDS

    Abstract: SI2319CDS-T1GE3 S10 SOT23 MARKING
    Text: Si2319CDS Vishay Siliconix P-Channel 40 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 40 RDS(on) (Ω) ID (A)a 0.077 at VGS = - 10 V - 4.4 0.108 at VGS = - 4.5 V - 3.7 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET


    Original     		PDF Si2319CDS 2002/95/EC O-236 OT-23) Si2319CDS-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. SI2319CDS-T1GE3 S10 SOT23 MARKING

    Untitled

    Abstract: No abstract text available
    Text: SPICE Device Model Si2319CDS Vishay Siliconix P-Channel 40 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the p-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C


    Original     		PDF Si2319CDS 18-Jul-08

    Untitled

    Abstract: No abstract text available
    Text: Si2319CDS Vishay Siliconix P-Channel 40 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 40 RDS(on) (Ω) ID (A)a 0.077 at VGS = - 10 V - 4.4 0.108 at VGS = - 4.5 V - 3.7 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET


    Original     		PDF Si2319CDS 2002/95/EC O-236 OT-23) Si2319CDS-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU.

    Untitled

    Abstract: No abstract text available
    Text: Vishay Intertechnology, Inc. Industrial / Power Factory Automation One of the World’s Largest Manufacturers of www.vishay.com Discrete Semiconductors and Passive Components Industrial / Power Factory Automation Motor Drives 4 Testers 5 Control Units 6 The Engineer’s Toolbox highlights, by market application, some innovative components Vishay


    Original     		PDF LLP75-6L VMN-MS6761-1212

    Untitled

    Abstract: No abstract text available
    Text: Vishay Intertechnology, Inc. Industrial / Power Factory Automation One of the World’s Largest Manufacturers of www.vishay.com Discrete Semiconductors and Passive Components Industrial / Power ファクトリーオートメーション モータードライブ 4


    Original     		PDF LLP75-6L VMN-MS6792-1304-INFA

    si7121

    Abstract: Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836
    Text: V ishay I ntertechnology, I nc . MOSFETs - Comprehensive Power MOSFET Technology Range I INNOVAT AND TEC O L OGY Vishay Siliconix N HN Power mosfets O 19 62-2012 Low to High Voltage Power MOSFETs ChipFET P o w e r PA K ® P o l a r PA K ® P o w e r PA I R ®


    Original     		PDF Mediu33-4-9337-2727 VMN-SG2127-1210 si7121 Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836