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    SIHFBC30 Price and Stock

    Vishay Siliconix SIHFBC30STRL-GE3

    SIHFBC30STRL-GE3 N-channel MOSFET Transistor, 3.6 A, 600 V, 3-Pin D2PAK | Siliconix / Vishay SIHFBC30STRL-GE3
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    RS SIHFBC30STRL-GE3 Bulk 700 5 Weeks 1
    • 1 $0.42
    • 10 $0.42
    • 100 $0.42
    • 1000 $0.42
    • 10000 $0.42
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    Vishay Siliconix SIHFBC30S-GE3

    SIHFBC30S-GE3 N-channel MOSFET Transistor, 3.6 A, 600 V, 3-Pin D2PAK | Siliconix / Vishay SIHFBC30S-GE3
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    RS SIHFBC30S-GE3 Bulk 10
    • 1 -
    • 10 $1.22
    • 100 $1.15
    • 1000 $1.04
    • 10000 $1.04
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    Vishay Siliconix SIHFBC30AS-GE3

    SIHFBC30AS-GE3 N-channel MOSFET Transistor, 3.6 A, 600 V, 3-Pin D2PAK | Siliconix / Vishay SIHFBC30AS-GE3
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    RS SIHFBC30AS-GE3 Bulk 10
    • 1 -
    • 10 $1.11
    • 100 $1.04
    • 1000 $0.94
    • 10000 $0.94
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    Vishay Intertechnologies SIHFBC30AS-GE3

    Transistor: N-MOSFET; unipolar; 600V; 2.3A; Idm: 14A; 74W
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TME SIHFBC30AS-GE3 1
    • 1 $1.23
    • 10 $1.11
    • 100 $0.88
    • 1000 $0.82
    • 10000 $0.82
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    Vishay Intertechnologies SIHFBC30L-GE3

    MOSFET N-CHANNEL 600V (Alt: SIHFBC30L-GE3)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    EBV Elektronik SIHFBC30L-GE3 143 Weeks 50
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    SIHFBC30 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: IRFBC30A, SiHFBC30A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Low Gate Charge Qg Results in Simple Drive Requirement 600 RDS(on) (Ω) VGS = 10 V 2.2 Qg (Max.) (nC) 23 Qgs (nC) 5.4 Qgd (nC) 11 Configuration Available • Improved Gate, Avalanche and Dynamic dV/dt RoHS*


    Original     		PDF IRFBC30A, SiHFBC30A 2002/95/EC O-220AB 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: IRFBC30, SiHFBC30 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • 600 RDS(on) (Ω) VGS = 10 V 2.2 Qg (Max.) (nC) 31 Qgs (nC) 4.6 Qgd (nC) 17 Configuration Single RoHS* COMPLIANT Third generation Power MOSFETs from Vishay provide the


    Original     		PDF IRFBC30, SiHFBC30 O-220AB O-220AB 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A

    74139m

    Abstract: 4139 temperature AN609 IRFBC30A SiHFBC30A 74139
    Text: IRFBC30A_RC, SiHFBC30A_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,


    Original     		PDF IRFBC30A SiHFBC30A AN609, 20-Apr-10 74139m 4139 temperature AN609 74139

    IRFBC30

    Abstract: No abstract text available
    Text: IRFBC30, SiHFBC30 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • 600 RDS(on) (Ω) VGS = 10 V 2.2 Qg (Max.) (nC) 31 Qgs (nC) 4.6 Qgd (nC) 17 Configuration Single RoHS* COMPLIANT Third generation Power MOSFETs from Vishay provide the


    Original     		PDF IRFBC30, SiHFBC30 O-220AB O-220AB 11-Mar-11 IRFBC30

    Untitled

    Abstract: No abstract text available
    Text: IRFBC30A, SiHFBC30A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Low Gate Charge Qg Results in Simple Drive Requirement 600 RDS(on) (Ω) VGS = 10 V 2.2 Qg (Max.) (nC) 23 Qgs (nC) 5.4 Qgd (nC) Ruggedness • Fully Characterized Capacitance and Avalanche Voltage


    Original     		PDF IRFBC30A, SiHFBC30A O-220 O-220 IRFBC30APbF SiHFBC30Amerchantability 12-Mar-07

    SiHFBC30L

    Abstract: No abstract text available
    Text: IRFBC30S, SiHFBC30S, IRFBC30L, SiHFBC30L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Surface Mount (IRFBC30S, SiHFBC30S) • Low-Profile Through-Hole (IRFBC30L, SiHFBC30L) • Available in Tape and Reel (IRFBC30S, SiHFBC30S) • Dynamic dV/dt Rating


    Original     		PDF IRFBC30S, SiHFBC30S IRFBC30L, SiHFBC30L

    SiHFBC30L

    Abstract: No abstract text available
    Text: IRFBC30S, SiHFBC30S, IRFBC30L, SiHFBC30L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition • Surface Mount (IRFBC30S, SiHFBC30S) • Low-Profile Through-Hole (IRFBC30L, SiHFBC30L) • Available in Tape and Reel (IRFBC30S, SiHFBC30S)


    Original     		PDF IRFBC30S, SiHFBC30S IRFBC30L, SiHFBC30L

    Untitled

    Abstract: No abstract text available
    Text: IRFBC30A, SiHFBC30A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Low Gate Charge Qg Results in Simple Drive Requirement 600 RDS(on) (Ω) VGS = 10 V 2.2 Qg (Max.) (nC) 23 Qgs (nC) 5.4 Qgd (nC) 11 Configuration Available • Improved Gate, Avalanche and Dynamic dV/dt RoHS*


    Original     		PDF IRFBC30A, SiHFBC30A 2002/95/EC O-220AB 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: IRFBC30, SiHFBC30 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • 600 RDS(on) (Ω) VGS = 10 V 2.2 Qg (Max.) (nC) 31 Qgs (nC) 4.6 Qgd (nC) 17 Configuration Single RoHS* COMPLIANT Third generation Power MOSFETs from Vishay provide the


    Original     		PDF IRFBC30, SiHFBC30 O-220AB O-220AB 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A

    Untitled

    Abstract: No abstract text available
    Text: IRFBC30, SiHFBC30 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • 600 RDS(on) (Ω) VGS = 10 V 2.2 Qg (Max.) (nC) 31 Qgs (nC) 4.6 Qgd (nC) 17 Configuration Single RoHS* COMPLIANT Third generation Power MOSFETs from Vishay provide the


    Original     		PDF IRFBC30, SiHFBC30 O-220AB O-220AB 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A

    Untitled

    Abstract: No abstract text available
    Text: IRFBC30A, SiHFBC30A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Low Gate Charge Qg Results in Simple Drive Requirement 600 RDS(on) (Ω) VGS = 10 V 2.2 Qg (Max.) (nC) 23 Qgs (nC) 5.4 Qgd (nC) 11 Configuration Available • Improved Gate, Avalanche and Dynamic dV/dt RoHS*


    Original     		PDF IRFBC30A, SiHFBC30A 2002/95/EC O-220AB 11-Mar-11

    IRFBC30

    Abstract: No abstract text available
    Text: IRFBC30, SiHFBC30 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • 600 RDS(on) (Ω) VGS = 10 V 2.2 Qg (Max.) (nC) 31 Qgs (nC) 4.6 Qgd (nC) 17 Configuration Single RoHS* COMPLIANT Third generation Power MOSFETs from Vishay provide the


    Original     		PDF IRFBC30, SiHFBC30 O-220 12-Mar-07 IRFBC30

    Untitled

    Abstract: No abstract text available
    Text: IRFBC30AS, IRFBC30AL, SiHFBC30AS, SiHFBC30AL Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Low Gate Charge Qg Results in Simple Drive Requirement 600 RDS(on) (Ω) VGS = 10 V 2.2 Qg (Max.) (nC) 23 Qgs (nC) 5.4 Qgd (nC) 11 Configuration


    Original     		PDF IRFBC30AS, IRFBC30AL, SiHFBC30AS SiHFBC30AL O-262) O-263) 12-Mar-07

    Untitled

    Abstract: No abstract text available
    Text: IRFBC30, SiHFBC30 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • 600 RDS(on) (Ω) VGS = 10 V 2.2 Qg (Max.) (nC) 31 Qgs (nC) 4.6 Qgd (nC) 17 Configuration Single RoHS* COMPLIANT Third generation Power MOSFETs from Vishay provide the


    Original     		PDF IRFBC30, SiHFBC30 O-220AB O-220AB 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A

    SiHFBC30L

    Abstract: No abstract text available
    Text: IRFBC30S, SiHFBC30S, IRFBC30L, SiHFBC30L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition • Surface Mount (IRFBC30S, SiHFBC30S) • Low-Profile Through-Hole (IRFBC30L, SiHFBC30L) • Available in Tape and Reel (IRFBC30S, SiHFBC30S)


    Original     		PDF IRFBC30S, SiHFBC30S IRFBC30L, SiHFBC30L

    SiHFBC30L

    Abstract: No abstract text available
    Text: IRFBC30S, SiHFBC30S, IRFBC30L, SiHFBC30L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition • Surface Mount (IRFBC30S, SiHFBC30S) • Low-Profile Through-Hole (IRFBC30L, SiHFBC30L) • Available in Tape and Reel (IRFBC30S, SiHFBC30S)


    Original     		PDF IRFBC30S, SiHFBC30S IRFBC30L, SiHFBC30L

    9571

    Abstract: AN609 IRFBC30
    Text: IRFBC30_RC, SiHFBC30_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,


    Original     		PDF IRFBC30 SiHFBC30 AN609, 20-Apr-10 9571 AN609

    Untitled

    Abstract: No abstract text available
    Text: IRFBC30A, SiHFBC30A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Low Gate Charge Qg Results in Simple Drive Requirement 600 RDS(on) (Ω) VGS = 10 V 2.2 Qg (Max.) (nC) 23 Qgs (nC) 5.4 Qgd (nC) 11 Configuration Available • Improved Gate, Avalanche and Dynamic dV/dt RoHS*


    Original     		PDF IRFBC30A, SiHFBC30A 2002/95/EC O-220AB 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    IRFBC30

    Abstract: IRFBC30AL IRFBC30AS SiHFBC30AL SiHFBC30AL-E3 SiHFBC30AS SiHFBC30AS-E3 IRFBC30ALPBF
    Text: IRFBC30AS, IRFBC30AL, SiHFBC30AS, SiHFBC30AL Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Low Gate Charge Qg Results in Simple Drive Requirement 600 RDS(on) (Ω) VGS = 10 V 2.2 Qg (Max.) (nC) 23 Qgs (nC) 5.4 Qgd (nC) 11 Configuration


    Original     		PDF IRFBC30AS, IRFBC30AL, SiHFBC30AS SiHFBC30AL O-262) O-263) 18-Jul-08 IRFBC30 IRFBC30AL IRFBC30AS SiHFBC30AL-E3 SiHFBC30AS-E3 IRFBC30ALPBF

    IRFBC30

    Abstract: irfbc30 vishay
    Text: IRFBC30, SiHFBC30 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • 600 RDS(on) (Ω) VGS = 10 V 2.2 Qg (Max.) (nC) 31 Qgs (nC) 4.6 Qgd (nC) 17 Configuration Single RoHS* COMPLIANT Third generation Power MOSFETs from Vishay provide the


    Original     		PDF IRFBC30, SiHFBC30 O-220 O-220 18-Jul-08 IRFBC30 irfbc30 vishay

    SiHFBC30L

    Abstract: IRFBC30 AN-994 IRFBC30L IRFBC30S SiHFBC30L-E3 SiHFBC30S SiHFBC30S-E3
    Text: IRFBC30S, SiHFBC30S, IRFBC30L, SiHFBC30L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Surface Mount (IRFBC30S, SiHFBC30S) • Low-Profile Through-Hole (IRFBC30L, SiHFBC30L) • Available in Tape and Reel (IRFBC30S, SiHFBC30S) • Dynamic dV/dt Rating


    Original     		PDF IRFBC30S, SiHFBC30S IRFBC30L, SiHFBC30L IRFBC30 AN-994 IRFBC30L IRFBC30S SiHFBC30L-E3 SiHFBC30S-E3

    Untitled

    Abstract: No abstract text available
    Text: IRFBC30AS, SiHFBC30AS, IRFBC30AL, SiHFBC30AL Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition • Low Gate Charge Qg Results in Simple Drive Requirement • Improved Gate, Avalanche and Dynamic dV/dt


    Original     		PDF IRFBC30AS, SiHFBC30AS IRFBC30AL, SiHFBC30AL O-262) O-263) 2002/95/EC 2011/65/EU 2002/95/EC. 2002/95/EC

    Untitled

    Abstract: No abstract text available
    Text: IRFBC30A, SiHFBC30A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Low Gate Charge Qg Results in Simple Drive Requirement 600 RDS(on) (Ω) VGS = 10 V 2.2 Qg (Max.) (nC) 23 Qgs (nC) 5.4 Qgd (nC) 11 Configuration Available • Improved Gate, Avalanche and Dynamic dV/dt RoHS*


    Original     		PDF IRFBC30A, SiHFBC30A 2002/95/EC O-220AB 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    Untitled

    Abstract: No abstract text available
    Text: IRFBC30, SiHFBC30 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • 600 RDS(on) (Ω) VGS = 10 V 2.2 Qg (Max.) (nC) 31 Qgs (nC) 4.6 Qgd (nC) 17 Configuration Single RoHS* COMPLIANT Third generation Power MOSFETs from Vishay provide the


    Original     		PDF IRFBC30, SiHFBC30 2002/95/EC O-220AB 11-Mar-11