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    SGSP358 Search Results

    SGSP358 Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SGSP358 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    SGSP358 STMicroelectronics Shortform Data Book 1988 Short Form PDF

    SGSP358 Datasheets Context Search

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    Untitled

    Abstract: No abstract text available
    Text: SGSP358 Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)50 V(BR)GSS (V)20 I(D) Max. (A)7.0 I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb) @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)50 Minimum Operating Temp (øC)


    Original     		PDF SGSP358

    ISOWATT220

    Abstract: No abstract text available
    Text: SELECTION GUIDE BY VOLTAGE RDS on 3 •d V(BR)DSS (max) (A) (V) (fi) Type •□(max) (A) P«ot (W) 9fs min (mho) ^iss max (pF) TO-220 TO-220 ISOWATT220 TO-220 ISOWATT220 SGSP358 MTP15N05L MTP15N05LFI STLT19 STLT19FI 7.00 15.00 10.00 15.00 10.00 50 75 30


    OCR Scan     		PDF O-220 ISOWATT220 ISOWATT22Q STH107N50 STH10N50 STHI10N50 STHI10N50FI

    sgsp358

    Abstract: tr/pcb-3/SGSP358
    Text: SGS-THOMSON SGSP358 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR • • • • TYPE V DSS ^DS on SGSP358 50 V 0.3 a Id 7A HIGH SPEED SWITCHING APPLICATIONS GENERAL PURPOSE ULTRA FAST SWITCHING EASY DRIVE FOR REDUCED COST AND SIZE INDUSTRIAL APPLICATIONS:


    OCR Scan     		PDF SGSP358 O-220 sgsp358 tr/pcb-3/SGSP358

    fast diode 1.5 A

    Abstract: No abstract text available
    Text: FZ~Z SGS-THOMSON ^7#» M glM [I[L[IÊ¥[M)M(g§ SGSP358 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR • • • • TYPE V DSS ^DS(on) SGSP358 50 V 0.3 Q Id 7 A HIGH SPEED SWITCHING APPLICATIONS GENERAL PURPOSE ULTRA FAST SWITCHING EASY DRIVE FOR REDUCED COST AND SIZE


    OCR Scan     		PDF SGSP358 O-220 fast diode 1.5 A

    diode t25 4 HO

    Abstract: No abstract text available
    Text: 3GE 1 ' D • 7 ^ 2 3 7 OOB'Hö? SCS-THO M SO N ;ILII gW BB(Si b ■ s6 SGSP358 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE SGSP358 • • • • Voss 50 V ^ D S (o n 0.3 n 7 A HIGH SPEED SWITCHING APPLICATIONS GENERAL PURPOSE ULTRA FAST SWITCHING


    OCR Scan     		PDF SGSP358 diode t25 4 HO

    Untitled

    Abstract: No abstract text available
    Text: rzrj SGS-THOMSON [» »[IILligretMOtgS SGSP358 CHIP N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR IN DIE FORM DIE SIZE: METALLIZATION: Top Back BACKSIDE THICKNESS: DIETHICKNESS: PASSIVATION: BONDING PAD SIZE: Source Gate 7 7 x 7 7 mils Al A u /C r/N i/A u


    OCR Scan     		PDF SGSP358

    GS 669

    Abstract: MC008
    Text: F=7 SGS-THOMSON * IM « SGSP358 CHIP N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR IN DIE FORM DIE SIZE: 77x77 mils METALLIZATION: Top Al Back A u/C r/N i/A u BACKSIDE THICKNESS: 6100 A DIE THICKNESS: 16 ± 2 mils PASSIVATION: P-Vapox BONDING PAD SIZE:


    OCR Scan     		PDF SGSP358 77x77 15x15 17x19 MC-0080 SGS358 GS 669 MC008

    Untitled

    Abstract: No abstract text available
    Text: _ rz7 3GE D • 7 ci2cJ237 0030140 2 SCS-THOMSON ^7# M »ilLiraM O gS s G s-Thomson SGSP358 CHIP N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR IN DIE FORM DIE SIZE: METALLIZATION: Top Back BACKSIDE THICKNESS: DIE THICKNESS: PASSIVATION:


    OCR Scan     		PDF ci2cJ237 SGSP358

    sgs*P381

    Abstract: ISOWATT218 IGBT ISOWATT220 STLT20 MTP3055AFI SGSP381 IRFP453FI SGSP579 SGSP591
    Text: SELECTION GUIDE BY PART NUMBER V BR DSS 9«s min (mho) max (PF) Page 70 75 75 75 35 8.00 3.00 4.00 4.00 4.00 700typ 2000 2000 2000 2000 159 163 167 173 167 30.00 20.00 12.00 19.00 19.00 75 35 75 75 78 4.00 4.00 2.70 4.00 4.00 2000 2000 2000 2000 2000 177


    OCR Scan     		PDF P-220 ISOWATT220 O-220 O-220 STHI07N50 STHI07N50FI STHI10N50 STHI10N50FI sgs*P381 ISOWATT218 IGBT STLT20 MTP3055AFI SGSP381 IRFP453FI SGSP579 SGSP591

    sgsp257

    Abstract: GSP-35 P2-58 P357 SGSP258
    Text: S G S-THOnSON 07E J> | 7cìacìS37 0017074 0 I ^ -V. , 73e 173 71 D SGSP257/P258^ r tf I h .SGSP^ 7 /P 3 5 8 J N-CHANNEL POWER MOS TRANSISTORS HIGH SPEED SWITCHING APPLICATIONS These products are diffused multi-cell silicon gate N-Channel enhancement mode Power-Mos field


    OCR Scan     		PDF SGSP257/P258^ 0V/60V OT-82 SGSP257 SGSP357 SGSP258 SGSP358 257/P SGSP357/P358 D--09 GSP-35 P2-58 P357

    IRF722P

    Abstract: IRF732P SGSP3055 IRF730P 1rfp450 IRF510 SGSP312 IRF540FI irf522p MTP20N10
    Text: CROSS REFERENCE SGS-THOMSON NEAREST PAGE INDUSTRY STANDARD SGS-THOMSON 2SK295 2SK296 2SK308 2SK310 2SK311 SGSP351 IRF723 IRF142 IRF722 IRF833 499 307 261 307 331 BUZ11A BUZ11FI BUZ11P BUZ11S2 BUZ11S2FI BUZ11A BUZ11FI BUZ11FI BUZ11S2 BUZ11S2FI 2SK312 2SK313


    OCR Scan     		PDF 2SK295 2SK296 2SK308 2SK310 2SK311 2SK312 2SK313 2SK319 2SK320 2SK324 IRF722P IRF732P SGSP3055 IRF730P 1rfp450 IRF510 SGSP312 IRF540FI irf522p MTP20N10

    TP8N10

    Abstract: th15n20 TH7N50 TP4N10 TP10N05 IRFP350FI TP5N35 tp5n40 TP4N45 TP3N40
    Text: CROSS REFERENCE INDUSTRY STANDARD SGS-THOMSON NEAREST PAGE INDUSTRY STANDARD SGS-THOMSON 2SK295 2SK296 2SK308 2SK310 2SK311 SGSP351 IRF723 IRF142 IRF722 IRF833 499 307 261 307 331 BUZ11A BUZ11FI BUZ11P BUZ11S2 BUZ11S2FI BUZ11A BUZ11FI BUZ11FI BUZ11S2 BUZ11S2FI


    OCR Scan     		PDF 2SK295 2SK296 2SK308 2SK310 2SK311 2SK312 2SK313 2SK319 2SK320 2SK324 TP8N10 th15n20 TH7N50 TP4N10 TP10N05 IRFP350FI TP5N35 tp5n40 TP4N45 TP3N40

    BUZ10A

    Abstract: ISOWATT-220 TO-220 MOS MTP15N05L MTP3055A SGSP382 SGSP222 BUZ10 SGSP492 sgsp482
    Text: SCS‘THOMSON GENERAL PURPOSE & INDUSTRIAL POWER MOS SOT 82 TO 3 TO 240 ISOTOP : STANDARD VERSION Internal schematic diagrams ISOTOP: FASTON VERSION Without final «V» in the sales type D o D G O- Ò S POWER MOS HIMOS (IGBT) V(BR) DSS RDS(on) max (V) (0)


    OCR Scan     		PDF SGSP358 MTP15N05L MTP15N05LFI STLT19* STLT19FI* SGSP222* SGSP322 BUZ10A BUZ71A IRFZ20FI ISOWATT-220 TO-220 MOS MTP3055A SGSP382 SGSP222 BUZ10 SGSP492 sgsp482

    ISOWATT220

    Abstract: MTP3055AFI IRF722FI IRFP453FI SGSP579 SGSP591 SGS35MA050D1 SGSP382
    Text: SELECTION GUIDE BY PART NUMBER a Type V BR DSS R DS(on) 9fs ^iss min (mho) max (pF) Page 20.00 17.00 30.00 25.00 20.00 70 75 75 75 35 8.00 3.00 4.00 4.00 4.00 700typ 2000 2000 2000 2000 159 163 167 173 167 30.00 20.00 12.00 19.00 19.00 75 35 75 75 78 4.00


    OCR Scan     		PDF STHI07N50 STHI07N50FI STHI10N50 STHI10N50FI O-220 ISOWATT22Û ISOWATT22Q ISOWATT220 MTP3055AFI IRF722FI IRFP453FI SGSP579 SGSP591 SGS35MA050D1 SGSP382

    Bow94c

    Abstract: MTP3055A IRFZ22 mosfet b0334 BUZ11 SGSP222 BUZ10 STVHD90 SGS137 SGSD93G
    Text: F=7 SGS-THOMSON AUTOMOTIVE MD g[^ [llL[l©î[S(5 R00(Si POWER TRANSISTORS HIGH GAIN BIPOLAR DARLINGTONS VcBO v CEO (A) (V) (V) (W) 2 2 2 5 5 5 6 6 6 8 8 8 8 8 8 8 8 8 8 10 10 10 10 10 10 12 12 12 12 12 20 25 30 30 60 80 100 60 80 100 60 80 100 40 60 80 80


    OCR Scan     		PDF IRFZ20FI BUZ10 STLT29* BUZ11A SGSP382 SGSP482 BUZ11 BUZ11FI IRFZ42 SGSP492 Bow94c MTP3055A IRFZ22 mosfet b0334 SGSP222 STVHD90 SGS137 SGSD93G

    ISOWATT-220

    Abstract: mtp15n05 BU210A ISOWATT220
    Text: SELECTION GUIDE BY VOLTAGE V BR DSS (V) R DS(on) (max) (0) g •d (A) 50 50 50 50 50 0.30 0.15 0.15 0.15 0.15 3.50 7.50 7.50 7.50 7.50 50 50 50 50 50 0.13 0.13 0.12 0.12 0.12 5.00 8.00 10.00 9.00 9.00 50 50 50 50 50 0.12 0.10 0.10 0.10 0.10 9.00 9.00 9.00


    OCR Scan     		PDF O-220 ISOWATT220 ISOWATT220 STH107N50 STH10N50 STHI10N50 STHI10N50FI ISOWATT-220 mtp15n05 BU210A

    sgs*P381

    Abstract: IRFp150 To3 package bu245a BR 1300
    Text: SELECTION GUIDE BY PACKAGE SOT-82 OPTION SOT-194 ROS on 3 ^(BR)DSS (max) *D (V) 50 100 450 500 Type (A) (S2) 0.13 1.40 3.00 8.50 5.00 1.20 1.20 0.60 SGSP222 SGSP201 SGSP230 SGSP239 CiS3 P.o, (A) (W) 9ts min (mho) max <pF) Page 10.00 2.50 2.50 1.20 50 18 50


    OCR Scan     		PDF OT-82 OT-194 SGSP222 SGSP201 SGSP230 SGSP239 O-220 SGSP358 MTP15N05L STLT19 sgs*P381 IRFp150 To3 package bu245a BR 1300