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    S5036 Search Results

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    S5036 Price and Stock

    TDK-Lambda Corporation LS50-36

    AC/DC CONVERTER 36V 50W
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    DigiKey LS50-36 Bulk 467 1
    • 1 $23.97
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    Mouser Electronics LS50-36 122
    • 1 $34.11
    • 10 $33.57
    • 100 $23.96
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    Newark LS50-36 Bulk 1
    • 1 $32.91
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    TME LS50-36 1
    • 1 $25.31
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    Master Electronics LS50-36
    • 1 $37.27
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    Sager LS50-36 1
    • 1 $23.97
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    Mean Well LRS-50-36

    AC/DC CONVERTER 36V 52W
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    DigiKey LRS-50-36 Box 26 1
    • 1 $13.86
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    • 100 $12.304
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    Avnet Americas LRS-50-36 Box 19 Weeks, 3 Days 1
    • 1 $12
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    Mouser Electronics LRS-50-36 15
    • 1 $13.43
    • 10 $12.9
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    Newark LRS-50-36 Bulk 15 1
    • 1 $8.78
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    RS LRS-50-36 Bulk 8 12 Weeks 1
    • 1 $14
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    TME LRS-50-36 20 1
    • 1 $12
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    Chip One Stop LRS-50-36 Bulk 9
    • 1 $10.7
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    Master Electronics LRS-50-36 10
    • 1 $12
    • 10 $10.9
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    Neutron USA LRS-50-36 50
    • 1 $44.96
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    Sager LRS-50-36 37 1
    • 1 $12
    • 10 $10.9
    • 100 $10.6
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    Kilo International DDS-50-3-6

    KNOB KNURLED W/SKRT 0.125" METAL
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    DigiKey DDS-50-3-6 Bulk 9 1
    • 1 $9.62
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    RS DDS-50-3-6 Bulk 20
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    DComponents AMES50-36S277NZ-Q

    AC/DC CONVERTER 36V 52W
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey AMES50-36S277NZ-Q Box 4 1
    • 1 $10.5
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    DComponents AMES50-36S277NZ-P

    AC/DC CONVERTER 36V 52W
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    DigiKey AMES50-36S277NZ-P Box 4 1
    • 1 $10.15
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    Find more S5036 price and stock on Findchips.com

    S5036 Datasheets (3)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    S50360 ABB Group Power Semiconductor Data Book 1976 Scan PDF
    S50360 Unknown Shortform Semicon, Diode, and SCR Datasheets Short Form PDF
    S50360TS Unknown Shortform Semicon, Diode, and SCR Datasheets Short Form PDF

    S5036 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    SC-75

    Abstract: SC-75A SC-89 Si1012R-T1 Si1012X-T1
    Text: Si1012R/X Vishay Siliconix N-Channel 1.8-V G-S MOSFET PRODUCT SUMMARY FEATURES VDS (V) rDS(on) (W) ID (mA) 0.70 @ VGS = 4.5 V 600 20 0.85 @ VGS = 2.5 V 500 1.25 @ VGS = 1.8 V 350 D D D D D D SC-75A or SC-89 G S Pb-free Available BENEFITS D D D D D 1 3 TrenchFETr Power MOSFET: 1.8-V Rated


    Original     		Si1012R/X SC-75A SC-89 Si1012R-Ted 08-Apr-05 SC-75 SC-89 Si1012R-T1 Si1012X-T1 PDF

    Si1419DH

    Abstract: No abstract text available
    Text: Si1419DH New Product Vishay Siliconix P-Channel 200-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) −200 rDS(on) (W) ID (A) 5.0 @ VGS = −10 V −0.38 5.1 @ VGS = −6 V −0.37 D TrenchFETr Power MOSFETS D Small, Thermally Enhanced SC-70 Package D Ultra Low On-Resistance


    Original     		Si1419DH SC-70 OT-363 Si1419DH-T1--E3 08-Apr-05 PDF

    Si5935DC

    Abstract: Si5935DC-T1
    Text: Si5935DC Vishay Siliconix Dual P-Channel 1.8-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) −20 rDS(on) (W) ID (A) 0.086 @ VGS = −4.5 V −4.1 0.121 @ VGS = −2.5 V −3.4 0.171 @ VGS = −1.8 V −2.9 D TrenchFETr Power MOSFETS D Low rDS(on) Dual and Excellent


    Original     		Si5935DC Si5935DC-T1 Si5935DC-T1--E3 08-Apr-05 PDF

    71055

    Abstract: MAX 71055 D 71055 Si5441DC Si5441DC-T1
    Text: Si5441DC Vishay Siliconix P-Channel 2.5-V G-S MOSFET PRODUCT SUMMARY VDS (V) −20 FEATURES rDS(on) (W) ID (A) 0.055 @ VGS = −4.5 V −5.3 0.06 @ VGS = −3.6 V −5.1 0.083 @ VGS = −2.5 V −4.3 D TrenchFETr Power MOSFET D 2.5-V Rated Qg (Typ) Pb-free


    Original     		Si5441DC Si5441DC-T1--E3 S-50366--Rev. 28-Feb-05 71055 MAX 71055 D 71055 Si5441DC-T1 PDF

    Untitled

    Abstract: No abstract text available
    Text: Si4410BDY Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) ID (A) 0.0135 @ VGS = 10 V 10 0.020 @ VGS = 4.5 V 8 D TrenchFETr Power MOSFET D 100% Rg Tested APPLICATIONS Pb-free Available D Battery Switch D Load Switch


    Original     		Si4410BDY Si4410BDY--T1 Si4410BDY--E3 Si4410BDY-T1--E3 18-Jul-08 PDF

    Si5441DC

    Abstract: Si5441DC-T1
    Text: Si5441DC Vishay Siliconix P-Channel 2.5-V G-S MOSFET PRODUCT SUMMARY VDS (V) −20 FEATURES rDS(on) (W) ID (A) 0.055 @ VGS = −4.5 V −5.3 0.06 @ VGS = −3.6 V −5.1 0.083 @ VGS = −2.5 V −4.3 D TrenchFETr Power MOSFET D 2.5-V Rated Qg (Typ) Pb-free


    Original     		Si5441DC Si5441DC-T1--E3 18-Jul-08 Si5441DC-T1 PDF

    Si5935DC

    Abstract: Si5935DC-T1
    Text: Si5935DC Vishay Siliconix Dual P-Channel 1.8-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) −20 rDS(on) (W) ID (A) 0.086 @ VGS = −4.5 V −4.1 0.121 @ VGS = −2.5 V −3.4 0.171 @ VGS = −1.8 V −2.9 D TrenchFETr Power MOSFETS D Low rDS(on) Dual and Excellent


    Original     		Si5935DC Si5935DC-T1 Si5935DC-T1--E3 18-Jul-08 PDF

    MMAS40GD

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MMAS40GD/D SEMICONDUCTOR TECHNICAL DATA MMAS40GD Micromachined *40g Accelerometer The MMAS40G family of silicon capacitive, micr~machined accelerometers features integral signal amplification, signal conditioning, a 4–pole low–pass


    Original     		MMAS40GD/D MMAS40GD MMAS40G S5036. 602-2W609 2M6612 AS40GDID MMAS40GD PDF

    Untitled

    Abstract: No abstract text available
    Text: Si4425BDY Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES D TrenchFETr Power MOSFET D Advanced High Cell Density Process PRODUCT SUMMARY VDS (V) −30 rDS(on) (W) ID (A) 0.012 @ VGS = −10 V −11.4 APPLICATIONS 0.019 @ VGS = −4.5 V −9.1 D Load Switches


    Original     		Si4425BDY Si4425BDY--T1 Si4425BDY--E3 Si4425BDY-T1--E3 18-Jul-08 PDF

    Si9407AEY

    Abstract: No abstract text available
    Text: Si9407AEY Vishay Siliconix P-Channel 60-V D-S , 175_C MOSFET FEATURES PRODUCT SUMMARY VDS (V) −60 60 rDS(on) (W) ID (A) 0.120 @ VGS = −10 V "3.5 0.15 @ VGS = −4.5 V "3.1 D TrenchFETr Power MOSFET D 175_C Maximum Junction Temperature Pb-free Available


    Original     		Si9407AEY Si9407AEY--T1 Si9407AEY--E3 08-Apr-05 PDF

    Untitled

    Abstract: No abstract text available
    Text: Si1406DH Vishay Siliconix N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (A) 0.065 @ VGS = 4.5 V 3.9 D TrenchFETr Power MOSFETS D 1.8-V Rated D Thermally Enhanced SC-70 Package 20 0.075 @ VGS = 2.5 V 3.6 APPLICATIONS 0.096 @ VGS = 1.8 V


    Original     		Si1406DH SC-70 OT-363 SC-70 Si1406DH-T1 Si1406DH-T1--E3 08-Apr-05 PDF

    Untitled

    Abstract: No abstract text available
    Text: Si5856DC Vishay Siliconix N-Channel 1.8-V G-S MOSFET With Schottky Diode FEATURES MOSFET PRODUCT SUMMARY VDS (V) 20 rDS(on) (W) ID (A) 0.040 @ VGS = 4.5 V 5.9 0.045 @ VGS = 2.5 V 5.6 0.052 @ VGS = 1.8 V 5.2 D D D D TrenchFETr Power MOSFETS Ultra Low rDS(on)


    Original     		Si5856DC Si5853DC Si585 S-50366--Rev. 28-Feb-05 PDF

    Untitled

    Abstract: No abstract text available
    Text: Si4410BDY Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) ID (A) 0.0135 @ VGS = 10 V 10 0.020 @ VGS = 4.5 V 8 D TrenchFETr Power MOSFET D 100% Rg Tested APPLICATIONS Pb-free Available D Battery Switch D Load Switch


    Original     		Si4410BDY Si4410BDY--T1 Si4410BDY--E3 Si4410BDY-T1--E3 S-50366--Rev. 28-Feb-05 PDF

    Si5853DC

    Abstract: Si5856DC
    Text: Si5856DC Vishay Siliconix N-Channel 1.8-V G-S MOSFET With Schottky Diode FEATURES MOSFET PRODUCT SUMMARY VDS (V) 20 rDS(on) (W) ID (A) 0.040 @ VGS = 4.5 V 5.9 0.045 @ VGS = 2.5 V 5.6 0.052 @ VGS = 1.8 V 5.2 D D D D TrenchFETr Power MOSFETS Ultra Low rDS(on)


    Original     		Si5856DC Si5853DC 18-Jul-08 PDF

    Si4410BDY

    Abstract: Si4410BDY-T1
    Text: Si4410BDY Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) ID (A) 0.0135 @ VGS = 10 V 10 0.020 @ VGS = 4.5 V 8 D TrenchFETr Power MOSFET D 100% Rg Tested APPLICATIONS Pb-free Available D Battery Switch D Load Switch


    Original     		Si4410BDY Si4410BDY--T1 Si4410BDY--E3 Si4410BDY-T1--E3 08-Apr-05 Si4410BDY-T1 PDF

    Untitled

    Abstract: No abstract text available
    Text: SUM65N20-30 Vishay Siliconix N-Channel 200-V D-S 175_C MOSFET FEATURES D TrenchFETr Power MOSFET D 175_C Junction Temperature D New Low Thermal Resistance Package D 100% Rg Tested D RoHS Compliant PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (W) 200 ID (A) 0.030 @ VGS = 10 V


    Original     		SUM65N20-30 O-263 SUM65N20-30--E3 S-50367--Rev. 28-Feb-05 PDF

    Si1406DH

    Abstract: No abstract text available
    Text: Si1406DH Vishay Siliconix N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (A) 0.065 @ VGS = 4.5 V 3.9 D TrenchFETr Power MOSFETS D 1.8-V Rated D Thermally Enhanced SC-70 Package 20 0.075 @ VGS = 2.5 V 3.6 APPLICATIONS 0.096 @ VGS = 1.8 V


    Original     		Si1406DH SC-70 OT-363 Si1406DH-T1 Si1406DH-T1--E3 18-Jul-08 PDF

    Si1419DH

    Abstract: 50368
    Text: Si1419DH New Product Vishay Siliconix P-Channel 200-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) −200 rDS(on) (W) ID (A) 5.0 @ VGS = −10 V −0.38 5.1 @ VGS = −6 V −0.37 D TrenchFETr Power MOSFETS D Small, Thermally Enhanced SC-70 Package D Ultra Low On-Resistance


    Original     		Si1419DH SC-70 OT-363 Si1419DH-T1--E3 18-Jul-08 50368 PDF

    SUM65N20-30

    Abstract: S-50367
    Text: SUM65N20-30 Vishay Siliconix N-Channel 200-V D-S 175_C MOSFET FEATURES D TrenchFETr Power MOSFET D 175_C Junction Temperature D New Low Thermal Resistance Package D 100% Rg Tested D RoHS Compliant PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (W) 200 ID (A) 0.030 @ VGS = 10 V


    Original     		SUM65N20-30 O-263 SUM65N20-30--E3 08-Apr-05 SUM65N20-30 S-50367 PDF

    Untitled

    Abstract: No abstract text available
    Text: Si4425BDY Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES D TrenchFETr Power MOSFET D Advanced High Cell Density Process PRODUCT SUMMARY VDS (V) −30 rDS(on) (W) ID (A) 0.012 @ VGS = −10 V −11.4 APPLICATIONS 0.019 @ VGS = −4.5 V −9.1 D Load Switches


    Original     		Si4425BDY Si4425BDY--T1 Si4425BDY--E3 Si4425BDY-T1--E3 S-50366--Rev. 28-Feb-05 PDF

    Untitled

    Abstract: No abstract text available
    Text: Si1012R/X Vishay Siliconix N-Channel 1.8-V G-S MOSFET PRODUCT SUMMARY FEATURES VDS (V) rDS(on) (W) ID (mA) 0.70 @ VGS = 4.5 V 600 20 0.85 @ VGS = 2.5 V 500 1.25 @ VGS = 1.8 V 350 D D D D D D SC-75A or SC-89 G S Pb-free Available BENEFITS D D D D D 1 3 TrenchFETr Power MOSFET: 1.8-V Rated


    Original     		Si1012R/X SC-75A SC-89 S-50366--Rev. 28-Feb-05 PDF

    nz104

    Abstract: CRC-10 MSAN-126 MT90220 MT90220AL DST-06 NZ 622
    Text: @ MT90220 M ITEL Octal IMA/UNI PHY Device S E M IC O N D U C T O R Features D S5036 ISSUE 4 D ecem ber 1999 Ordering Information • • • • • • • • • • Cost effective, single chip, 8-port ATM IMA and UNI processor Up to 4 IMA groups over 8 T1/E1 links can be


    OCR Scan     		MT90220 nz104 CRC-10 MSAN-126 MT90220AL DST-06 NZ 622 PDF

    BROWN BOVERI

    Abstract: R50320 S50310 R50310 R50330 R50340 R50360 S50320 S50330 S50340
    Text: BBC •FMC B R O W N , B O V E R I & CIE AKTIENGESELLSCHAFT MANNHEIM Silicon Power Rectifiers BROWN BOVERI G eschäftsbereich H albleiter und S trom rich te r Telefon 06206 503-1, T elex 0 4 -6 5 7 2 7 Postfach 200, D -6840 Lam pertheim Series 503 250 Amperes Average


    OCR Scan     		D-6840 S50310 R50310 S50320 R50320 S50330 R50330 S50340 R50340 S50360 BROWN BOVERI R50360 PDF

    TFC 718 S

    Abstract: tfc 718 RQS series
    Text: Data Sheet April 1997 mi cr oe l e c t r oni c s group Lucent Technologies Bell Labs Innovations T7121 HDLC Interface for ISDN HIFI-64 Features Description • Low-cost device for B-channel (64 kbits/s) or D-channel (16 kbits/s) data transport. The T7121 HDLC Interface for ISDN (HIFI-64) con­


    OCR Scan     		T7121 HIFI-64) T7250C. DS96-357ISDN DS90-087SMOS, AY95-006ISDN, TN96-01OISDN) TFC 718 S tfc 718 RQS series PDF