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    NE699M01 Search Results

    NE699M01 Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    NE699M01 NEC NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE HIGH-GAIN AMPLIFICATION Original PDF
    NE699M01-T1 NEC NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE HIGH-GAIN AMPLIFICATION Original PDF

    NE699M01 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    6621 sot-23

    Abstract: RF NPN POWER TRANSISTOR C 10-12 GHZ IS21E NE699M01 NE699M01-T1 S21E 519 510 SOT-363 662 transistor 5555
    Text: PRELIMINARY DATA SHEET NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE HIGH-GAIN AMPLIFICATION FEATURES NE699M01 OUTLINE DIMENSIONS Units in mm PACKAGE OUTLINE M01 • HIGH fT: 16 GHz TYP TOP VIEW • HIGH GAIN: |S21E|2 = 14 dB TYP at f = 2 GHz, VCE = 2 V, Ic = 20 mA


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    PDF NE699M01 NE699M01 OT-363 OT-23 OT143 24-Hour 6621 sot-23 RF NPN POWER TRANSISTOR C 10-12 GHZ IS21E NE699M01-T1 S21E 519 510 SOT-363 662 transistor 5555

    IC 7432

    Abstract: AT 1004 S12 IC 7432 power dissipation NE687 NE699M01 NE699M01-T1 S21E of IC 7432 S12 sot 23-6
    Text: PRELIMINARY DATA SHEET NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE HIGH-GAIN AMPLIFICATION FEATURES NE699M01 OUTLINE DIMENSIONS Units in mm HIGH fT: 16 GHz TYP at 2 V, 20 mA • LOW NOISE FIGURE: NF = 1.1 dB TYP at 2 GHz • HIGH GAIN: |S21E|2 = 14 dB TYP at f = 2 GHz


    Original
    PDF NE699M01 NE699M01 NE687) OT363 24-Hour IC 7432 AT 1004 S12 IC 7432 power dissipation NE687 NE699M01-T1 S21E of IC 7432 S12 sot 23-6

    2SK2396A

    Abstract: NEC 2SK2396A k2396a pc1658 2SC2407 P10100EJ6V0SG00 UAA 1006 k2396 K2597 Marking Code SAW MOS transistor
    Text: SILICON MICROWAVE SEMICONDUCTORS Silicon discrete, Silicon MMIC Dual gate GaAs FET SELECTION GUIDE 1999/2000 6th Edition [MEMO] 2 Selection Guide P10100EJ6V0SG00 • The information in this document is based on documents issued in October,1999 at the latest. The


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    PDF P10100EJ6V0SG00 2SK2396A NEC 2SK2396A k2396a pc1658 2SC2407 P10100EJ6V0SG00 UAA 1006 k2396 K2597 Marking Code SAW MOS transistor

    UAA 1006

    Abstract: manual* cygnus sl 5000 transistor marking T79 ghz PC1658G NEC Ga FET marking code T79 gaas fet T79 pc1658 MC-7712 2SC5431 NEC U71
    Text: NEC Offices NEC Electronics Europe GmbH Oberrather Str. 4 D-40472 Düsseldorf, Tel. (02 11) 65 03 01 Fax (02 11) 65 03-3 27 NEC Electronics Italiana S.R.L. Via Fabio Filzi, 25A I-20124 Milano Tel. (02) 66 75 41 Fax (02) 66 75 42 99 NEC Electronics (Germany) GmbH


    Original
    PDF D-40472 I-20124 I-00139 D-30177 GB-MK14 D-81925 S-18322 F-78142 E-28007 UAA 1006 manual* cygnus sl 5000 transistor marking T79 ghz PC1658G NEC Ga FET marking code T79 gaas fet T79 pc1658 MC-7712 2SC5431 NEC U71

    702 E

    Abstract: IC 7432 D 431 6-PIN 907 transistor 7432
    Text: PRELIMINARY DATA SHEET NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE HIGH-GAIN AMPLIFICATION FEATURES • HIGH OUTLINE DIMENSIONS Units in mm PACKAGE OUTLINE M01 fT : 16 GHz TYP at 2 V, 20 mA • NE699M01 TOP VIEW LOW NOISE FIGURE: — NF =1.1 dB TYP at 2 GHz


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    PDF NE699M01 NE699M01 NE687) OT363 OT-23 OT-10 24-Hour 702 E IC 7432 D 431 6-PIN 907 transistor 7432

    sl 0565 r

    Abstract: 6621 sot-23 p 0368 mini
    Text: PRELIMINARY DATA SHEET NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE HIGH-GAIN AMPLIFICATION FEATURES • HIGH NE699M01 OUTLINE DIMENSIONS Units in mm PACKAGE OUTLINE M01 fT : 16 GHz TYP TOP VIEW • HIGH GAIN: 2.1 ± 0.1 IS 21 e |2 = 14 dB TYP a tf = 2 GHz, V ce = 2 V, Ic = 20 mA


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    PDF NE699M01 NE699M01 OT-363 OT-23 sl 0565 r 6621 sot-23 p 0368 mini

    t z 1037 519

    Abstract: 6621 sot-23 NE699M01
    Text: PRELIMINARY DATA SHEET NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE HIGH-GAIN AMPLIFICATION FEATURES NE699M01 OUTLINE DIMENSIONS Units in mm PACKAGE OUTLINE M01 HIGH fT: 16 GHz TYP at 2 V, 20 mA TOP VIEW LOW NOISE FIGURE: NF = 1.1 dB TYP at 2 GHz 2.1 ± 0.1 -


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    PDF NE699M01 NE699M01 NE687) OT363 t z 1037 519 6621 sot-23

    UPA827TF

    Abstract: UPA833TF NE685 UPA814T
    Text: Surface Mount Bipolar Transistors for Low Current, Low Voltage Applications gu ai VCE V 6 PIN SUPER MINI MOLD I Ic (mA) 1 1 Hk H (V) Ic (mA) TYP (dB) VCE : to . ’• » J ■ ■UHU '* m - w -"V. m SOT-363 STYLE NE696M01 2.0 2 1 1.9 9.5 2 1 13 9 NE698M01


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    PDF NE696M01 NE698M01 NE699M01 UPA806T UPA807T UPA808T UPA809T UPA814T NE685 NE686 UPA827TF UPA833TF

    uPA63

    Abstract: UPA827TF UPA831TF NE685
    Text: Small Signal Bipolar Selection Guide LOW NOISE BIPOLAR TRANSISTORS Part Number TEST NF/Ga NF/Ga NF Ga MAG ISîIEl* ft 1 Vce tc TYP TYP V ce le TYP TYP GHz (mA) (dB) (dB) (dB) (V) (mA) (dB) (GHz) (V) hrt TYP le MAX (mA) Package Description Pkg, Code Screening


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    PDF UPA800T UPA801T UPA802T UPA806T UPA807T UPA808T UPA809T URA810T UPA811T UPA812T uPA63 UPA827TF UPA831TF NE685

    UPA827TF

    Abstract: UPA833TF UPA802T UPA831TF SOT 363 175 sot363 SOT 153 NE685 dual sot363 sot-363
    Text: Low N oise Bipolar Transistors * VCE V Ic TYP TYP (mA) (dB) Facon I S il MJjX M >j DUAL BIPOLAR TRANSISTORS UPA800T 2.0 3 5 1.9 - 13 3 5 7.5 8.0 120 35 (SOT-363) S06 D NE680 344 UPA801T 2.0 3 7 1.2 - 14 3 7 9.0 4.5 120 100 (SOT-363) S06 D NE856 346 UPA802T


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    PDF UPA800T UPA801T UPA802T UPA806T UPA807T UPA808T UPA809T UPA810T UPA811T UPA812T UPA827TF UPA833TF UPA831TF SOT 363 175 sot363 SOT 153 NE685 dual sot363 sot-363