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    MMBT5551LT1 Search Results

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    MMBT5551LT1 Price and Stock

    onsemi MMBT5551LT1G

    TRANS NPN 160V 0.6A SOT23-3
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    DigiKey MMBT5551LT1G Cut Tape 487,590 1
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    MMBT5551LT1G Digi-Reel 487,590 1
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    MMBT5551LT1G Reel 486,000 3,000
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    MMBT5551LT1G Reel 0 Weeks, 2 Days 41,667
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    MMBT5551LT1G Ammo Pack 17 Weeks, 1 Days 1
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    MMBT5551LT1G Reel 55 Weeks, 2 Days 3,000
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    Newark MMBT5551LT1G Cut Tape 305,448 1
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    MMBT5551LT1G Cut Tape 164,685 1
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    MMBT5551LT1G Reel 21,000 3,000
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    MMBT5551LT1G 7,417 64
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    Quest Components MMBT5551LT1G 5,933
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    MMBT5551LT1G 372
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    Rochester Electronics MMBT5551LT1G 26,840 1
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    TME MMBT5551LT1G 1
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    Ameya Holding Limited MMBT5551LT1G 120
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    Avnet Asia MMBT5551LT1G 10 Weeks 60,000
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    Chip-Germany GmbH MMBT5551LT1G 734
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    EBV Elektronik MMBT5551LT1G 459,000 12 Weeks 3,000
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    Master Electronics MMBT5551LT1G 189,000
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    New Advantage Corporation MMBT5551LT1G 5,946,000 1
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    Win Source Electronics MMBT5551LT1G 229,310
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    onsemi SMMBT5551LT1G

    TRANS NPN 160V 0.6A SOT23-3
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SMMBT5551LT1G Cut Tape 35,764 1
    • 1 $0.21
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    SMMBT5551LT1G Digi-Reel 35,764 1
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    SMMBT5551LT1G Reel 33,000 3,000
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    Avnet Americas SMMBT5551LT1G Reel 10 Weeks 30,000
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    Mouser Electronics SMMBT5551LT1G 23,677
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    SMMBT5551LT1G 2,911
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    Rochester Electronics SMMBT5551LT1G 1,230,000 1
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    TME SMMBT5551LT1G 1
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    Avnet Asia SMMBT5551LT1G 10 Weeks 30,000
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    Rochester Electronics LLC MMBT5551LT1H

    SS SOT23 HV XSTR NPN 160V
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey MMBT5551LT1H Bulk 11,539
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    onsemi MMBT5551LT3G

    Bipolar Transistors - BJT 600mA 160V NPN
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics MMBT5551LT3G 21,352
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    onsemi SMMBT5551LT3G

    Bipolar Transistors - BJT High Voltage NPN Bipolar Transistor
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    Mouser Electronics SMMBT5551LT3G 13,817
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    MMBT5551LT1 Datasheets (8)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    MMBT5551LT1 Avic Electronics SOT-23 Plastic-Encapsulate Transistors Original PDF
    MMBT5551LT1 Leshan Radio Company High Voltage Transistors(NPN Silicon) Original PDF
    MMBT5551LT1 Motorola Silicon NPN Transistor Original PDF
    MMBT5551LT1 On Semiconductor Small Signal High Voltage Transistor-NPN; Package: SOT-23 (TO-236) 3 LEAD; No of Pins: 3; Container: Tape and Reel; Qty per Container: 3000 Original PDF
    MMBT5551LT1 On Semiconductor Small Signal NPN Original PDF
    MMBT5551LT1 On Semiconductor Over 600 obsolete distributor catalogs now available on the Datasheet Archive - Transistor, Bipolar, NPN, High voltage, 160V (BR), 50mA, Pkg Style SOT23 Scan PDF
    MMBT5551LT1G On Semiconductor Small Signal High Voltage Transistor-NPN; Package: SOT-23 (TO-236) 3 LEAD; No of Pins: 3; Container: Tape and Reel; Qty per Container: 3000 Original PDF
    MMBT5551LT1G On Semiconductor Small Signal NPN Original PDF

    MMBT5551LT1 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    1N914

    Abstract: MMBT5550 MMBT5550LT1 MMBT5551 MMBT5551LT1
    Text: LESHAN RADIO COMPANY, LTD. High Voltage Transistors NPN Silicon 3 COLLECTOR MMBT5550LT1 MMBT5551LT1 1 BASE 2 EMITTER MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage V CEO 140 Vdc Collector–Base Voltage V CBO 160 Vdc Emitter–Base Voltage


    Original
    MMBT5550LT1 MMBT5551LT1 236AB) 1N914 MMBT5550 MMBT5550LT1 MMBT5551 MMBT5551LT1 PDF

    Untitled

    Abstract: No abstract text available
    Text: High Voltage Transistors NPN Silicon 3 COLLECTOR MMBT5550LT1 MMBT5551LT1 1 BASE 2 EMITTER MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage V CEO 140 Vdc Collector–Base Voltage V CBO 160 Vdc Emitter–Base Voltage V 6.0 Vdc 600 mAdc 3


    Original
    MMBT5550LT1 MMBT5551LT1 236AB) PDF

    1N914

    Abstract: MMBT5550 MMBT5550LT1 MMBT5551 MMBT5551LT1
    Text: ON Semiconductort MMBT5550LT1 MMBT5551LT1 High Voltage Transistors NPN Silicon MMBT5551LT1 is a Preferred Device 3 MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage VCEO 140 Vdc Collector–Base Voltage VCBO 160 Vdc Emitter–Base Voltage


    Original
    MMBT5550LT1 MMBT5551LT1 MMBT5551LT1 r14525 MMBT5550LT1/D 1N914 MMBT5550 MMBT5550LT1 MMBT5551 PDF

    MMBT5551LT1

    Abstract: No abstract text available
    Text: MMBT5551LT1 NPN Silicon Epitaxial Planar Transistors for high voltage amplifier applications. SOT-23 Plastic Package Absolute Maximum Ratings Ta = 25oC Symbol Value Unit Collector Emitter Voltage VCEO 160 V Collector Base Voltage VCBO 180 V Emitter Base Voltage


    Original
    MMBT5551LT1 OT-23 100MHz 15kHZ MMBT5551LT1 PDF

    Untitled

    Abstract: No abstract text available
    Text: MMBT5550LT1, MMBT5551LT1 MMBT5551LT1 is a Preferred Device High Voltage Transistors NPN Silicon http://onsemi.com Features • Pb−Free Package is Available COLLECTOR 3 MAXIMUM RATINGS Rating Symbol 5550 5551 Unit Collector −Emitter Voltage VCEO 140 160


    Original
    MMBT5550LT1, MMBT5551LT1 MMBT5551LT1 MMBT5550LT1/D PDF

    MMBT5551LT1

    Abstract: No abstract text available
    Text: MMBT5551LT1 NPN Silicon Epitaxial Planar Transistors for high voltage amplifier applications. SOT-23 Plastic Package Absolute Maximum Ratings Ta = 25oC Symbol Value Unit Collector Emitter Voltage VCEO 160 V Collector Base Voltage VCBO 180 V Emitter Base Voltage


    Original
    MMBT5551LT1 OT-23 100MHz 15kHZ MMBT5551LT1 PDF

    MMBT5551LT1G

    Abstract: sot-23 Marking M1F 1N914 MMBT5550 MMBT5550LT1G MMBT5551 MMBT5551LT3G
    Text: MMBT5550LT1G, MMBT5551LT1G High Voltage Transistors NPN Silicon http://onsemi.com Features • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS COLLECTOR 3 Compliant MAXIMUM RATINGS Rating Collector −Emitter Voltage Collector −Base Voltage


    Original
    MMBT5550LT1G, MMBT5551LT1G MMBT5550 MMBT5551 MMBT5550LT1/D MMBT5551LT1G sot-23 Marking M1F 1N914 MMBT5550 MMBT5550LT1G MMBT5551 MMBT5551LT3G PDF

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors SOT—23 MMBT5551LT1 1. BASE TRANSISTOR( NPN ) 2. EMITTER 3. COLLECTOR FEATURES 1.0 Power dissipation PCM : 0.3 W(Tamb=25℃) Collector current ICM: 0.6


    Original
    OT-23 MMBT5551LT1 MMBT5551LT1 100MHz PDF

    1N914 SOT-23

    Abstract: MMBT550LT1
    Text: MMBT5550LT1, MMBT5551LT1 MMBT5551LT1 is a Preferred Device High Voltage Transistors NPN Silicon http://onsemi.com Features • Pb−Free Package is Available COLLECTOR 3 MAXIMUM RATINGS Symbol 5550 5551 Unit Collector −Emitter Voltage Rating VCEO 140 160


    Original
    MMBT5550LT1, MMBT5551LT1 MMBT5551LT1 OT-23-3 1N914 SOT-23 MMBT550LT1 PDF

    1N914

    Abstract: MMBT5550 MMBT5550LT1 MMBT5551 MMBT5551LT1
    Text: ON Semiconductort MMBT5550LT1 MMBT5551LT1* High Voltage Transistors NPN Silicon *ON Semiconductor Preferred Device MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage VCEO 140 Vdc Collector–Base Voltage VCBO 160 Vdc Emitter–Base Voltage


    Original
    MMBT5550LT1 MMBT5551LT1* r14525 MMBT5550LT1/D 1N914 MMBT5550 MMBT5550LT1 MMBT5551 MMBT5551LT1 PDF

    2N5551S

    Abstract: MMBT5551LT1
    Text: MMBT5551LT1 NPN EPITAXIAL SILICON TRANSISTOR SOT-23 3 HIGH VOLTAGE TRANSISTOR o 1 Collector Dissipation:Pc-225mW Ta=25 Collector-Emiller Voltage: V CEO= 160V 2 1. 1.BASE 2.EMITTER 3.COLLECTOR 0.4 0.95 0.95 2.9 1.9 2.4 1.3 Unit:mm o ABSOLUTE MAXIMUM RATINGS


    Original
    MMBT5551LT1 OT-23 Pc-225mW 100mA 2N5551S MMBT5551LT1 PDF

    transistor 25

    Abstract: transistor mmbt5551lt1
    Text: MMBT5551LT1 SEMICONDUCTOR Shandong Yiguang Electronic Joint stock Co., Ltd TECHNICAL DATA NPN EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE TRANSISTOR * Collector Dissipation: Pc=225mW Ta=25℃ * Collector-Emitter Voltage :Vceo=160V ABSOLUTE MAXIMUM RATINGS at Ta=25℃


    Original
    MMBT5551LT1 225mW OT-23 transistor 25 transistor mmbt5551lt1 PDF

    sot-23 Marking G1

    Abstract: MMBT5551LT1
    Text: @vic SOT-23 Plastic-Encapsulate Transistors MMBT5551LT1 TRANSISTOR NPN SOT-23 1. BASE FEATURES 2. EMITTER 3. COLLECTOR W (Tamb=25℃) 2. 4 1. 3 0. 95 0. 4 2. 9 Collector current ICM: 0.6 A Collector-base voltage 180 V V(BR)CBO: Operating and storage junction temperature range


    Original
    OT-23 MMBT5551LT1 OT-23 100MHz MMBT5551LT1 sot-23 Marking G1 PDF

    sot-23 Marking M1F

    Abstract: MMBT5551LT1G MMBT5550 MMBT5550LT1 MMBT5550LT1G MMBT5551 MMBT5551LT1 MMBT5551LT3 MMBT5551LT3G RB SOT23-3
    Text: MMBT5550LT1, MMBT5551LT1 Preferred Device High Voltage Transistors NPN Silicon http://onsemi.com Features • Pb−Free Packages are Available COLLECTOR 3 MAXIMUM RATINGS Rating Symbol Collector −Emitter Voltage Value VCEO MMBT5550 MMBT5551 Collector −Base Voltage


    Original
    MMBT5550LT1, MMBT5551LT1 MMBT5550 MMBT5551 MMBT5550LT1/D sot-23 Marking M1F MMBT5551LT1G MMBT5550 MMBT5550LT1 MMBT5550LT1G MMBT5551 MMBT5551LT1 MMBT5551LT3 MMBT5551LT3G RB SOT23-3 PDF

    On semiconductor date Code sot-23

    Abstract: IC data book free download sot-23 body marking A 4 TO-236 sot-23 Marking G1 Tape and Reel Packaging Specifications Code sot-23 on semiconductor 1N914 transistor data sheet free download G1 SOT-23 marking codes transistors a1 sot-23
    Text: MMBT5550LT1, MMBT5551LT1 Preferred Device High Voltage Transistors NPN Silicon http://onsemi.com Features •ăPb-Free Packages are Available COLLECTOR 3 MAXIMUM RATINGS Rating Symbol Collectorā-āEmitter Voltage Value VCEO MMBT5550 MMBT5551 Collectorā-āBase Voltage


    Original
    MMBT5550LT1, MMBT5551LT1 MMBT5550 MMBT5551 MMBT5550LT1/D On semiconductor date Code sot-23 IC data book free download sot-23 body marking A 4 TO-236 sot-23 Marking G1 Tape and Reel Packaging Specifications Code sot-23 on semiconductor 1N914 transistor data sheet free download G1 SOT-23 marking codes transistors a1 sot-23 PDF

    1N914

    Abstract: MMBT5550 MMBT5550LT1 MMBT5551 MMBT5551LT1 MMBT5551LT1G MMBT5551LT3 5551 SOT-23
    Text: MMBT5550LT1, MMBT5551LT1 MMBT5551LT1 is a Preferred Device High Voltage Transistors NPN Silicon http://onsemi.com Features • Pb−Free Package is Available COLLECTOR 3 MAXIMUM RATINGS Rating Symbol 5550 5551 Unit Collector −Emitter Voltage VCEO 140 160


    Original
    MMBT5550LT1, MMBT5551LT1 MMBT5551LT1 MMBT5550LT1/D 1N914 MMBT5550 MMBT5550LT1 MMBT5551 MMBT5551LT1G MMBT5551LT3 5551 SOT-23 PDF

    2N5551S

    Abstract: MMBT5551LT1
    Text: MMBT5551LT1 NPN EPITAXIAL SILICON TRANSISTOR SOT-23 3 HIGH VOLTAGE TRANSISTOR o 1 Collector Dissipation:Pc-225mW Ta=25 Collector-Emiller Voltage: V CEO= 160V 2 1. 1.BASE 2.EMITTER 3.COLLECTOR 0.4 0.95 0.95 2.9 1.9 2.4 1.3 Unit:mm ABSOLUTE MAXIMUM RATINGS


    Original
    MMBT5551LT1 OT-23 Pc-225mW 300uS 2N5551S 100mA MMBT5551LT1 PDF

    1n914 SOD123

    Abstract: sot-23 MARKING CODE G1 Sc59
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA High Voltage Transistors MMBT5550LT1 MMBT5551LT1* COLLECTOR 3 NPN Silicon *Motorola Preferred Device 1 BASE 2 EMITTER MAXIMUM RATINGS Rating Symbol Value Unit Collector – Emitter Voltage VCEO 140 Vdc Collector – Base Voltage


    Original
    MMBT5550LT1 MMBT5551LT1* 236AB) 22NOT 1n914 SOD123 sot-23 MARKING CODE G1 Sc59 PDF

    1N914

    Abstract: MMBT5550 MMBT5550LT1 MMBT5551 MMBT5551LT1
    Text: MOTOROLA Order this document by MMBT5550LT1/D SEMICONDUCTOR TECHNICAL DATA High Voltage Transistors MMBT5550LT1 MMBT5551LT1* COLLECTOR 3 NPN Silicon *Motorola Preferred Device 1 BASE 2 EMITTER MAXIMUM RATINGS Rating Symbol Value Unit Collector – Emitter Voltage


    Original
    MMBT5550LT1/D MMBT5550LT1 MMBT5551LT1* 236AB) MMBT5550LT1/D* 1N914 MMBT5550 MMBT5550LT1 MMBT5551 MMBT5551LT1 PDF

    MMBT5551LT1G

    Abstract: 1N914 MMBT5550 MMBT5550LT1G MMBT5551 MMBT5551LT3G MMBT5550LT1 4rc10
    Text: MMBT5550LT1G, MMBT5551LT1G High Voltage Transistors NPN Silicon http://onsemi.com Features • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS COLLECTOR 3 Compliant MAXIMUM RATINGS Rating Collector −Emitter Voltage Collector −Base Voltage


    Original
    MMBT5550LT1G, MMBT5551LT1G MMBT5550 MMBT5551 MMBT5550LT1/D MMBT5551LT1G 1N914 MMBT5550 MMBT5550LT1G MMBT5551 MMBT5551LT3G MMBT5550LT1 4rc10 PDF

    MMBT5551LT1

    Abstract: motorola S MMBT5551 G1 MMBT5550
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA High Voltage T ransistors MMBT5550LT1 MMBT5551LT1* NPN Silicon ‘Motorola Preferred Device 2 EMITTER MAXIMUM RATINGS Rating Symbol Value Unit Collector-Emitter Voltage v CEO 140 Vdc Collector-Base Voltage VCBO 160 Vdc


    OCR Scan
    MMBT5550LT1 MMBT5551LT1* --236AB) MMBT5551LT1 MMBT5551LT1 motorola S MMBT5551 G1 MMBT5550 PDF

    MBT5551LT1

    Abstract: MBT5551L T0236AB
    Text: M O TO RO LA SEMICONDUCTOR TECHNICAL DATA High V oltage T ransistors NPN Silicon MMBT5550LT1 MMBT5551LT1* COLLECTOR 3 ‘M otorola Preferred D evice 2 MAXIMUM RATINGS EMITTER Symbol Value Unit Collector-Emitter Voltage Rating v C EO 140 Vdc Collector-Base Voltage


    OCR Scan
    MMBT5550LT1 MMBT5551LT1* T0-236AB) 225rola MBT5550LT1 MBT5551LT1 1N914 MBT5551LT1 MBT5551L T0236AB PDF

    Untitled

    Abstract: No abstract text available
    Text: MAXIMUM RATINGS Symbol Value Unit C o llector-E m itter Voltage Rating v CEO 140 Vdc Collector-Base Voltage v CBO 160 Vdc Em itter-Base Voltage Vebo 6.0 Vdc ic 600 m Adc C ollector C urrent — Continuous MMBT5550LT1 MMBT5551LT1* CASE 318-07, STYLE 6 SOT-23 TO-236AB


    OCR Scan
    MMBT5550LT1 MMBT5551LT1* OT-23 O-236AB) MBT5550 MMBT5551 MMBT5550 PDF

    Untitled

    Abstract: No abstract text available
    Text: SyrnSEM i SOT -23 Plastic Encapsulate Transistors 5YM5EMI SEMICONDUCTOR MMBT5551LT1 TRANSISTOR NPN FEATURES Power dissipation PCM : 03 W (Tamb=25 °C) Collector current ICM: 0.6 A Collector base voltage V ( b r ) cbo : 180 V Operating and storage junction temperature range


    OCR Scan
    MMBT5551LT1 MMBT5551LTl PDF