ML309
Abstract: M151 MI31T MI31TA MI32T MI32TA MI37T MI38T MI51T MIB37T
Text: Infrared Emitting Diodes TYPEE p A.p V f MAX 2 6 1/2 NO. nm TYP (mW) (mA) (V) (mA) MI31T MI31TA 940 880 0.5 2.8 20 20 1.6 1.8 20 20 MI32T MI32TA 940 880 0.5 2.8 20 20 1.6 1.8 MI37T MIB37T 940 940 2.0 2.0 20 20 MI38T MIB38T 940 940 2.0 2.0 MI51T M151 TA 940
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MI31T
MI31TA
MI32T
MI32TA
MI37T
MIB37T
MI38T
MIB38T
1-45a
1-45b
ML309
M151
MI51T
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MI32TA
Abstract: No abstract text available
Text: MI32TA INFRARED EMITTING DIODE 02.94 DESCRIPTION M I32TA is GaAlAs infrared emitting diode 3mm diameter molded 5.32 5.32 0.21 in 1.0TJ (0.04) 0.75(0.03) _ max. clear transparent lens. -2.5{0.1) • • • ABSOLUTE MAXIMUM RATINGS Ail dimension in mm(inch)
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MI32TA
100mA
180mW
10/iS,
IF-20mA
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Untitled
Abstract: No abstract text available
Text: CRO MI32TA IN FR A R ED E M IT T IN G D IO D E 02.94 D ESC R IPTIO N MI32TA is GaAlAs infrared emitting diode molded in 3mm diameter clear transparent lens. • • • ABSOLUTE M A X IM U M R A TIN G S Ail dimension in mm inch No Scale Toi. : +/-0.3mm Forward Current (Continuous)
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MI32TA
MI32TA
100mA
180mW
MI32T/
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MI32TA
Abstract: No abstract text available
Text: CRO MI32TA INFRARED EMITTING DIODE 02.94 DESCRIPTION MI32TA is GaAlAs infrared emitting diode molded in 3mm diameter clear transparent lens. • All dimension in mm inch • • ABSOLUTE MAXIMUM RATINGS No Scale Toi. : +/-0.3mm 100mA 1A* 6V 180mW -25 to +85°C
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MI32TA
MI32TA
100mA
180mW
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2SA532
Abstract: BC109 BC184 BC549 BC317 2SC734 Y MS181A BC159 8 2SC876 TTP31A ML78M06A BC357
Text: ALPHANUMERIC INDEX TYPE NO. 057-2G 1611G 1620G 1621-2G 1623G 1641G 1N4001 1N4002 1N40Û3 1N4004 1N4005 1N4006 1N4007 1N5391 1N5392 1N5393 1N5394 1N5395 1N5396 1N5397 1N5398 1N5399 1N5400 1N5401 IN5402 1N5403 1N5404 1N5405 1N5406 1N5407 1N5408 2021-1G 2023G
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057-2G
1611G
1620G
1621-2G
1623G
1641G
1N4001
1N4002
1N4004
1N4005
2SA532
BC109 BC184 BC549
BC317
2SC734 Y
MS181A
BC159 8
2SC876
TTP31A
ML78M06A
BC357
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Untitled
Abstract: No abstract text available
Text: Blinking LED TYPE NO. MOGB517W SOURCE COLOUR Xp IV MIN Bin (m c d ) 630 565 10 5 IF=20mA 2.0 ~ 10 10 700 660 660 630 640 2.5 300 50 60 60 3 3 3 3 3 1.6 ~ 3.5 1.6 ~ 3.5 565 35 3 Orange Green VF (V) OPERATING VOLTAGE (V) PULSE RATE (Hz) 0.8-1.9 VIEWING ANGLE
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MOGB517W
MSB557D
MSB557TA
MSB557DA
MOB557D
MOB557DR
MGB557D
MSB558DA
MSB559TA
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ML309
Abstract: No abstract text available
Text: MICRO ELECTRONICS LTD SIE D • bOT17flfi GOÜ1G1S TTH ■ MEHK Infrared Emitting Diodes T -4 I-1 3 TYPE p Àp V TYP mW (mA) f MAX (V) 1 2 01/2 1 PACKAGE CASE 35 35 03.2mm 0.69" lead 1-5 20 20 35 35 T-1 standard 03.0mm 1-43 2.0 2.0 100 100 30 18 03.0mm flangeless
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bOT17flfi
MI31T
MI31TA
MI32T
MI32TA
MI37T
MIB37T
MI38T
MIB38T
MI51T
ML309
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ML309
Abstract: No abstract text available
Text: Infrared Emitting Diodes 2 0 Vi degree PACKAGE CASE NO. 20 20 35 35 0 3.2mm 0.69" lead 1-4 1.6 1.8 20 20 35 35 T-l standard 0 3.0mm 1-61 20 20 2.0 2.0 100 100 30 18 0 3.0mm flangeless 1-7 1-8 2.0 2.0 20 20 2.0 2.0 100 100 30 20 0 3.0mm flangeless low profile lens
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MI31T
MI31TA
MI32T
MI32TA
MI33T
MIB33T
MI38T
MIB38T
MI51T
MI51TA
ML309
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