MG300Q2YS40 Search Results

MG300Q2YS40 Datasheets (2)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
MG300Q2YS40		Toshiba	GTR Module Silicon N Channel IGBT		Scan	PDF
MG300Q2YS40		Toshiba	N CHANNEL IGBT (HIGH POWER SWITCHING, MOTOR CONTROL APPLICATIONS)		Scan	PDF

MG300Q2YS40 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
Eupec BSM25GD120DN2E3224 Abstract: BSM50GD120DN2E3226 EUPEC BSM50G*120DN2 BSM400GA170DLS BSM25GD120DN2E BSM20GP60 BSM25GD120DN2E3224 2902 BSM10GP120 BSM35GD120DLCE3224 Text: MARKETING NEWS Datum: 2001-01-19 Seite 1 von 1 Document No.: MN2001-02 Dear colleagues, please be notified that Toshiba has withdrawn some products. To offer the costumer an exactly technical alternative solution or an matchable technical alternative we built up the following checklist.	Original	MN2001-02 MG15Q6ES50 BSM15GD120DN2E3224 MG15Q6ES50A BSM15GD120DN2 MG25Q6ES50 BSM25GD120DN2E3224 MG25Q6ES50A BSM25GD120DN2 MG50Q6ES50 Eupec BSM25GD120DN2E3224 BSM50GD120DN2E3226 EUPEC BSM50G*120DN2 BSM400GA170DLS BSM25GD120DN2E BSM20GP60 BSM25GD120DN2E3224 2902 BSM10GP120 BSM35GD120DLCE3224	PDF
Untitled Abstract: No abstract text available Text: T O S H IB A MG300Q2YS40 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT MG300Q2YS40 HIGH PO W ER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. • High Input Impedance • High Speed EQUIVALENT CIRCUIT : tf = 0.5^s Max. trr = 0.5,«s (Max.) V cE (sat) = 4.0V (Max.)	OCR Scan	MG300Q2YS40 2-109D2A 00A//iS TjS125	PDF
Untitled Abstract: No abstract text available Text: T O S H IB A MG300Q2YS40 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT MG300Q2YS40 HIGH PO W ER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. • High Input Impedance • High Speed EQUIVALENT CIRCUIT : tf = 0.5^s Max. trr = 0.5,«s (Max.) V cE (sat) = 4.0V (Max.)	OCR Scan	MG300Q2YS40 2-109D2A	PDF
YS40 Abstract: MG300Q2YS40 MG300Q2YS MG300Q Text: TOSHIBA MG300Q2YS40 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT MG300Q2 YS40 HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. • • High Input Impedance High Speed EQUIVALENT CIRCUIT : tf= O.ô^s Max. trr —0.5/43 (Max.) Low Saturation Voltage : VCE(sat)~4-W (Max.)	OCR Scan	MG300Q2YS40 MG300Q2 2-109D2A YS40 MG300Q2YS40 MG300Q2YS MG300Q	PDF
Untitled Abstract: No abstract text available Text: TOSHIBA MG300Q2YS40 TO SH IBA GTR M O D ULE SILICON N CHANNEL IGBT MG300Q2YS40 HIGH P O W ER SWITCHING APPLICATIONS. M OTOR CONTROL APPLICATIONS. H ig h In p u t Im p e d an ce EQ U IVA LEN T CIRCUIT H ig h Speed tf=0.5//s M a x . Cl t 1T = 0.5//s (M a x .)	OCR Scan	MG300Q2YS40 2-109D2A	PDF
MG300Q2YS40 Abstract: MG300Q2YS Text: T O SH IB A MG300Q2YS40 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT MG300Q2YS40 HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. • High Input Impedance • High Speed • • • • EQUIVALENT CIRCUIT : tf=0.5/;s Max. trr = 0.5^s (Max.) : VQE(sat)“ 4*0V (Max.)	OCR Scan	MG300Q2YS40 2-109D2A MG300Q2YS40 MG300Q2YS	PDF
GT250101 Abstract: MG150J2YS40 MG75Q2YS11 MG400Q1US11 MG200Q1JS9 MG75J2YS40 MG50J6ES40 MG200Q2YS91 MG75J6ES40 mg100q2ys9 Text: Insulated ìate Bipolar Transistors (IG BTs Milestones in IGBT Technology In 1986, Toshiba started the production of its 1st Generation 1000V IGBTs. With the introduction of Toshiba’s 2nd Generation in 1989, IGBTs were made available in High Speed and Low Saturation types for both a 600V and a	OCR Scan	2-99A1A 2-99B1A GT250101 MG150J2YS40 MG75Q2YS11 MG400Q1US11 MG200Q1JS9 MG75J2YS40 MG50J6ES40 MG200Q2YS91 MG75J6ES40 mg100q2ys9	PDF
MG15J6ES40 Abstract: MG150Q2YS40 MG300J2YS50 MG300Q2YS40 MG75Q2YS40 MG25Q2YS40 MG200Q2YS40 MG300Q2YS4 Text: .2 Short-Circuit Guarantee General conditions Tim e b etw een short-circuits > 1 A llowed n u m b er o f short-circuits 100 Junction tem peratu re before short-circuit < 125 s °C Electrical Conditions for 600 V Types T ype No. Rg min / £2 VCE/V VCEP/V MG15J6ES40	OCR Scan	MG15J6ES40 MG2SJ6KS40 MG50J2YS50 MG50J6KS50 MG75J2YS50 MG75J6KS50 100J2YS50 MG100J6KS50 MG150J2YS50 MG200J2YS50 MG150Q2YS40 MG300J2YS50 MG300Q2YS40 MG75Q2YS40 MG25Q2YS40 MG200Q2YS40 MG300Q2YS4	PDF
GT80J101 Abstract: MG75Q2YS40 MG360V1US41 MG100Q2YS42 MG75J6ES50 GT60M301 MG15J6ES40 MG300Q2YS40 MG150Q2YS40 mg100j6es5 Text: • INDEX Page , Discrete Types Page Page MG300J2YS50 . 214-219 MG100Q1JS40 GT8J101 . . 69-71 MG400J1US51 . 220-225 MG100Q1ZS40 . 403-407 GT8J102 SM . . 72-75 MG400J2YS50 . 226-231 MG150J1ZS50 . . 408-412	OCR Scan	GT8J101 GT8J102 GT8Q101 GT15J101 GT15J102 GT8Q102 MG300J2YS50 MG400J1US51 MG400J2YS50 MG800J1US51 GT80J101 MG75Q2YS40 MG360V1US41 MG100Q2YS42 MG75J6ES50 GT60M301 MG15J6ES40 MG300Q2YS40 MG150Q2YS40 mg100j6es5	PDF
G50Q2YS40 Abstract: MG8Q6ES42 GT8Q102 mg300q1us41 GT60M301 MIG50J904H gt15j103 MIG30J103H MG25Q6ES50A mg150q1js Text: TOSHIBA [1 ] Product List [ 1 ] Product List Product No. GT10G101 GT10J301 GT10J311 GT10Q301 GT10Q 311 GT15G101 GT15J101 GT15J102 GT15J103 SM GT15Q101 GT15Q301 GT15Q 311 GT20D101 GT20D201 GT20G101 GT20G101 (SM) GT20G102 GT20G102 (SM) GT20J301 GT20J311 GT25G101	OCR Scan	GT10G101 GT10J301 GT10J311 GT10Q301 GT10Q GT15G101 GT15J101 GT15J102 GT15J103 GT15Q101 G50Q2YS40 MG8Q6ES42 GT8Q102 mg300q1us41 GT60M301 MIG50J904H gt15j103 MIG30J103H MG25Q6ES50A mg150q1js	PDF
MG50Q6ES41 Abstract: MG8QES42 mg200q2ys11 MG75Q2YS1 MG100Q2YS42 MP6750 MG100Q2YS11 mg50j1bs11 MG300J1US1 GT15J101 Text: Suggested IGBTs For o-Phase Inverters Suggested IGBTs For 3-Phase Inverters Inverter 220 VAC Input Brake Section Inverter Section 440 VAC Input Brake Section Inverter Section f < 5 kHz f > 5 kHz 600 VAC Input Inverter HP (kW) (kVA) 1 0.75 1.5 GT15J101 MP6750	OCR Scan	GT15J101 MG25J1BS11 MG50J1BS11 MG50J1E1S11 MG75J1BS11 GT15Q101 GT25Q101 MG50Q6ES41 MG8QES42 mg200q2ys11 MG75Q2YS1 MG100Q2YS42 MP6750 MG100Q2YS11 MG300J1US1	PDF
MG50Q6es41 Abstract: MG8QES42 GT15J101 MG75Q2YS11 MG25Q6ES42 MG100Q2YS42 MG300Q1US41 MG300Q2YS MG50Q1BS1 MG150Q2YS1 Text: Suggested KìBTs For 3-Phase Inverters Suggested IGBTs For 3-Phase Inverters 220 V A C Input Inverter Brake Inverter Brake Section Section Section 440 VAC Input 600 VAC Input Inverter Section Inverter f < 5 kHz f > 5 kHz GT15Q101 MG8Q6ES42 MG8QES42 - MP6752	OCR Scan	GT15J101 MG25J1BS11 MG50J1BS11 MG75J1BS11 MP6750 MP6752 MG25J6ES40 MG50Q6es41 MG8QES42 MG75Q2YS11 MG25Q6ES42 MG100Q2YS42 MG300Q1US41 MG300Q2YS MG50Q1BS1 MG150Q2YS1	PDF
MG150N2YS40 Abstract: MG100J2YS45 mg75j2ys40 MG150J2YS40 MG15N6ES42 MG100G2YS1 mg75n2ys40 mg25n2ys40 MG200J2YS40 MG50J6ES40 Text: Connection Maximum Bating VCES V ICÌAÌ 8 15 25 G T15J101* eoo G T8J101* G T8J102(SM )* G T15J102* GT15J103(SMJ* 50 75 G T60J101* <60A) G T 80J101* GT50J1Û2+ (80A) M G 50 J1B S 1 1 MG75J1SB11 100 150 200 300 400 500 G T50J101* Q T25J101* MG25J1BS11 MG100J1BS11 MG150J1BS11	OCR Scan	T8J101* T8J102 T15J101* T15J102* GT15J103 T25J101* MG25J1BS11 T50J101* T60J101* 80J101* MG150N2YS40 MG100J2YS45 mg75j2ys40 MG150J2YS40 MG15N6ES42 MG100G2YS1 mg75n2ys40 mg25n2ys40 MG200J2YS40 MG50J6ES40	PDF
MG75J2YS40 Abstract: MG100J2YS45 MG50J2YS45 MG150J2YS45 MG300Q1US MG400Q1US11 MG400J2YS40 MG150J2YS40 MG200Q2YS1 MG200J2YS45 Text: Insulated Gate Bipolar Transistors IGBTs Milestones in IGBT Technology In 1986, Toshiba started the production of its 1st Generation 1000V IGBTs. With the introduction of Toshiba’s 2nd Generation in 1989, IGBTs were made available in High Speed and Low Saturation types for both a 600V and a	OCR Scan	2-109C1A MG50J6ES50 MG75J6ES50 2-94A2A MG100J6ES50 MG50Q6ES11 MIG150J201H MIG200J201H MIG75Q201H MIG100Q201H MG75J2YS40 MG100J2YS45 MG50J2YS45 MG150J2YS45 MG300Q1US MG400Q1US11 MG400J2YS40 MG150J2YS40 MG200Q2YS1 MG200J2YS45	PDF